TW517306B - Method and device to determine the end point of semiconductor device processing and the processing method and device of the processed material using the method - Google Patents

Abstract

A standard pattern of the differential value of the interference light of the preset thickness difference of the first processed material using the wavelength as the parameter is set, and a standard pattern of the differential value of the interference light of the preset residual mask film thickness of the processed material using the wavelength as the parameter is also set. Then the interference light intensity of the second processed material with the same constitution as that of the first processed material is measured with respect to the plural wavelengths, so as to find the real pattern of the differential value of the measured interference light intensity using the wavelength as the parameter. The thickness difference and residual mask film thickness of the second processed material are calculated based on the real pattern of the standard pattern and the differential value.

Description

517306 A7 B7 V. Description of the Invention (彳) [Field of the Invention] The present invention relates to a method and device for determining the end point of a semiconductor device process—II ------ mr,-(Please read the precautions on the back before filling this page ) And processing method and device for processing materials using this method and device, in particular, to determine the etching amount of the processing material or the film formation of the processing material in the manufacturing of semiconductor integrated circuit devices, etc. by light emission spectroscopy Method and device for determining the end point of a semiconductor device process at the end of a mass detection process, and a method for processing a material to be processed using the method and device. In particular, it is suitable for accurately measuring the etching amount of various layers provided on a substrate by an etching process using plasma discharge, and is suitable as a desired etched depth and depth of a material to be processed, and Film thickness measurement method and device, and method and device for processing material to be processed using the method and device. / [Background of the invention] [Explanation of the know-how] The manufacturing of printed semiconductor wafers by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs for the production of layers of various materials formed on the surface of the wafer, especially the layers of dielectric materials For dry removal or pattern formation, dry etching is widely used. For the control of process parameters, the most important thing is to accurately determine the end-point of etching to stop etching at the desired etching depth and film thickness during the processing of this layer. In the dry etching process, the light emission intensity of a specific wavelength in the plasma light changes as the specific film is etched. Therefore, 'One of the methods for detecting the etching end point of semiconductor wafers, there is a conventional method to detect the change in the luminous intensity of a specific wavelength from the plasma in a dry etching process.' The basic paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm). ) 517 306 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _____B7 _V. Description of the Invention (2) A method for detecting the etching end point of a specific film based on the test results. At this time, it is necessary to prevent erroneous detection based on the shaking of the detection waveform caused by noise. As a method for accurately detecting a change in light emission intensity, for example, Japanese Patent Application Laid-Open No. 6 1-5 3 7 2 8 and Japanese Patent Application Laid-Open No. 6 3-200 5 3 3 are known. Japanese Unexamined Patent Publication No. 6 1 — 5 372 8 uses a moving average method, and Japanese Unexamined Patent Publication No. 6 3-2 0 0 5 3 3 performs miscellaneous processing by approximation using a least square method. Reduced information. With the recent miniaturization of semiconductors and a high accumulation aperture ratio (the area to be etched on semiconductor wafers), light emitted from a photodetector (Sensor) to a specific wavelength of a reaction product is emitted. The intensity becomes weak. As a result, the level of the sampling signal from the photodetector is small, and it is difficult for the endpoint determination unit to reliably detect the end of the etching based on the sampling signal from the photodetector. Furthermore, when detecting the end of the uranium engraving to stop processing, it is actually important that the remaining thickness of the dielectric layer is equal to the predetermined plutonium. The conventional process uses a time-thickness control technique based on the premise that the etching rate of each layer is constant, and monitors the entire process. The value of the etching rate is obtained, for example, by processing a sample wafer in advance. This method uses a time monitoring method to elapse a time corresponding to a predetermined etching film thickness, and simultaneously stops the uranium etching process. However, the actual film is known to have a low reproducibility of the thickness of the Si 102 layer formed by, for example, a Low Pressure Chemical Vapor Deposition (LPC VD) technique. The tolerance of the thickness caused by the process variation in LPCVD is equivalent to the initial stage of the Si02 layer. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X297 mm) (Please read the precautions on the back before filling in this Page) • ^^ 1., 11 lines -5- 517306 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) About 10% thick. Therefore, the actual final thickness of the Si 102 layer remaining on the silicon substrate cannot be accurately measured by the time monitoring method. Therefore, the actual thickness of the remaining layers is finally determined by using a standard spectral interferometer (Spectral interferometer) technique. When it is judged that the wafer is over etched, the wafer is rejected as rejected and discarded. In addition, it is known that the insulating film etching device changes with time, such as a decrease in the uranium etching speed with repeated etching. Depending on the situation, it may stop during the etching, and its solution is necessary. In addition, for the stable operation of the process, it is also important to monitor the change over time of the uranium engraving speed. However, the conventional method is only for the time monitoring of the end point determination. Appropriate method. In addition, the end point determination in the case where the etching time is about 10 seconds is short. The end point determination method for shortening the determination preparation time and the time for which the determination time needs to be shortened sufficiently are not necessarily sufficient. In addition, there are many cases where the area of the insulating film to be etched is 1% or less, and the plasma luminous intensity change from the reaction product accompanying the etching is small. Therefore, there is a need for an endpoint determination system that can detect even slight changes, but in practice, no inexpensive system can be found. On the other hand, other methods for detecting the etching endpoint of a semiconductor wafer are known from Japanese Patent Application Laid-Open No. 5-1 7 9 4 6 7; Japanese Patent Application Laid-Open No. 8-2 7 4 0 8 2; The method of the interferometer disclosed in 2000-97648, Japanese Patent Application Laid-Open No. 2000-106356, and the like. This interferometer uses a monochromatic radiation emitted from a laser to contact a wafer of a stacked structure containing dissimilar materials at a normal incidence angle. For example, the S i〇2 layer is stacked on the S i 3 N 4 layer (please read the precautions on the back before filling this page)-^^ 1.

1. The paper size of 1T line is applicable to the Chinese National Standard (CNS) 8-4 specification (210X297 mm) -6-517306 A7 B7 5. In the description of the invention (4), the radiation reflected by the top surface of the S i 〇2 layer Light forms interference fringes with the radiated light reflected from the boundary surface formed between the Si 102 layer and the S 1 3 N 4 layer. The reflected radiation is irradiated to a suitable detector. This is due to the thickness of the Si02 layer during the etching, which generates a signal with a change in intensity. If the top surface of the Si02 layer is exposed during the etching process, the uranium etching speed and the current etching thickness can be continuously and correctly monitored immediately. Instead of lasers, it is known to use a spectrometer to measure a predetermined radiated light emitted from a plasma. [Summary of the Invention] The contents of the above-mentioned conventional documents are summarized as follows. In Japanese Patent Application Laid-Open No. 5-1 79 46 7, three types of color filters (red, green, and blue) are used to detect interference light (plasma light), and the end point of the etching is detected. Moreover, Japanese Patent Application Laid-Open No. 8-274082 (USP 5 6 5 8 4 1 8) calculates the extreme amplitude of the interference waveform (the maximum and minimum of the waveform: Zero transit point). The time until 値 (Count value) reaches the predetermined 値 is calculated by measurement, the etching rate is calculated, and the remaining etching time until the predetermined film thickness is obtained based on the calculated etching rate, and the etching process is stopped based on this time. Furthermore, Japanese Patent Application Laid-Open No. 2000-97648 obtains the waveform of the difference between the light intensity pattern (with a wavelength as a parameter) of the interference light before processing and the light intensity parameter of the interference light after or during processing (where The wavelength is a parameter), by comparing the difference waveform with the database (Data This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page)) -Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 517306 A7 B7 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (5) Base waveform measurement of layer difference (film thickness). In addition, Japanese Patent Application Laid-Open No. 2000-106356 relates to a spin coating device, and measures a time change of interference light across a plurality of wavelengths to obtain a film thickness. Furthermore, U S P 6 0 8 1 3 3 4 determines a database by measuring the characteristic action of the time variation of the interference light, and determines the final determination of the etching by comparing the database with the measured interference waveform. Based on this judgment, changes in the etching process conditions are promoted. The above known examples have the following problems. (1) If an etching using a mask material (for example, a resist, a nitride film, and an oxide film) is performed, interference light from the fused material is overlapped with interference light from the mask material . (2) The material of the material to be processed (for example, silicon and the cover material disposed thereon) is etched. Since the cover material is etched together with the silicon, there are only those materials that require the material to be processed. The etched amount of uranium (etched depth of uranium) may not accurately measure the etching amount of silicon. (3) Since the initial thickness of the material used in the production process is due to the initial thickness of the cover material of the device structure or the initial thickness of the material to be etched, the interference light from different film thicknesses is lost. overlapping. From the above points, it is difficult to accurately measure / control the layer to be processed (the target layer for semiconductor processing), especially the etching depth or the amount of residual film of the layer to be processed in the plasma etching process. The object of the present invention is to provide a method and a device for determining the end point of a semiconductor device process which can solve the problems of the conventional technology, and use this method and (please read the precautions on the back before filling this page)% 1. Order a book Paper size applies to Chinese National Standard (CNS) A4 specification (210 X297 mm) -8- 517306 A7 B7 V. Description of the invention (6) Method and device for processing the treated material of the device. Another object of the present invention is to provide a semiconductor device manufacturing process capable of accurately measuring the actual etching depth or the amount of residual film of a layer to be processed on-line (〇η -1 ine) in plasma processing, especially in plasma uranium etching processing. End point determination method and device, and method and device for processing material to be processed using the method and device. Still another object of the present invention is to provide etching capable of controlling each layer of a semiconductor device at a predetermined etching depth and film thickness with high accuracy online Process. Still another object of the present invention is to provide an etching depth of a material to be processed or a film thickness measuring device which can accurately measure the actual etching depth of the processed layer and the film thickness on the line. For example, the inventors of the present invention should solve the problems of the conventional technology and achieve one of the objects of the present invention described above. For each of a plurality of wavelengths, obtain a time-differential waveform of the interference waveform, and obtain a display interference waveform based on the waveform. The pattern of the wavelength dependence of the differential chirp (that is, the differential chirped pattern of the interference waveform with the wavelength as a parameter) is used to measure the thickness of the film. The reason for using the wavelength-dependent pattern showing the time differential chirp of the interference waveform in the present invention is as follows. Since the measurement of i η-s i t u (immediately, R a a t i m e) during the engraving is taken as a pre-measurement, the film thickness of the film to be treated changes from moment to moment. Therefore, the time differential processing of the interference waveform is possible. In addition, the noise of the interference waveform can be removed by the differential processing. In addition, the paper size of the etched materials (such as silicon and the nitride film of the cover material) applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) —I ------ F, (Please read first Note on the back, please fill in this page again) Order • Line ·-Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -9-517306 A7 _ B7_ V. Description of the invention (7) The inflection rate is different for the wavelength. Therefore, it is possible to detect the characteristic change (film thickness dependence) of each substance by interference light measurement over multiple wavelengths. According to one aspect of the present invention, an etching depth and a film thickness measuring method for measuring the uranium engraved amount of a material to be processed include: a) setting a differential of interference light to a predetermined amount of etching of a first material to be processed including a cover material; A step of the standard pattern of the first processed material with the wavelength as a parameter; b) setting a differential of the interference light of a predetermined etching amount of the cover material of the first processed material with the wavelength of the parameter Steps of the standard pattern of the cover material; c) Measure the interference light intensity of the second processed material having the same structure as the first processed material with respect to a plurality of wavelengths, and obtain a differential value of the measured interference light intensity A step of a solid pattern having a wavelength of chirp as a parameter; and d) obtaining the etched amount of the second material to be processed based on the standard pattern of the first material to be processed and the standard pattern of the cover material and the solid pattern. step. According to the present invention, it is possible to provide an etching depth and a film thickness measurement of a material to be processed that can accurately measure an actual etching amount of a layer to be processed in a plasma process, particularly in a plasma etching process. Method and method for processing a sample of a material to be processed using the method. In addition, an etching process can be provided in which each layer of the semiconductor device is controlled on the line with high accuracy to a predetermined etching amount. In addition, it can provide the etching depth or film of the processed material to accurately measure the actual etching amount of the processed layer on the line. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ': -10-(Please (Please read the notes on the back before filling this page). Ordering line 1 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 517306 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (8) Thickness measuring device. [Brief Description of the Drawings] Fig. 1 is a block diagram showing the overall configuration of an etching apparatus for a semiconductor wafer including an etching measurement device according to a first embodiment of the present invention. Fig. 2A is a longitudinal sectional view of a material to be processed during the etching process. Figures 2B and 2C show examples of actual waveforms of interference light with different wavelengths. Figs. 3A and 3B show the interference light of each of the etched surfaces of the silicon wafer shown in A, B, and C shown in Figs. 2A and 2B, and the etched surfaces of the mask shown in a, b, and c. A graph of the wavelengths of the series data as parameters. Fig. 4 is a flowchart showing the order of the step of the material to be treated and the thickness of the mask residual film when the etching process is performed by the etching amount measuring device of Fig. 1. Fig. 5 is a diagram showing a first embodiment according to the present invention. A block diagram of the overall configuration of an etching apparatus for a semiconductor wafer according to a modified example of the etching depth measuring apparatus. FIG. 6 is a flowchart showing the operation of the embodiment in FIG. 5. FIG. 7 is a graph showing the measurement results of the etching depth in the example of FIG. 5. Fig. 8 is a block diagram showing the overall configuration of a semiconductor wafer etching apparatus including a residual film thickness measuring device according to a second embodiment of the present invention. Figure 9 shows the longitudinal sectional shape of the material being processed during the engraving process (please read the precautions on the back before filling out this page)-^ 1. Alignment A paper size applies to Chinese National Standard (CNS) A4 specifications ( 210X297 mm) -11-517306 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (9) 〇 Figure 10 is a flowchart showing the operation of the embodiment of Figure 8. Fig. 11 is a graph showing the measurement results of the polycrystalline silicon residual film thickness and the regression line in the example of Fig. 8. Fig. 12 is a block diagram showing the overall configuration of an etching apparatus for a semiconductor wafer including an etching depth measuring device according to a third embodiment of the present invention. Fig. 13 is a longitudinal sectional view showing a material to be processed in the course of an etching process. . FIG. 14 is a flowchart showing the operation of the embodiment in FIG. 12. FIG. 15 is a block diagram showing the overall configuration of an etching apparatus for a semiconductor wafer provided with an etching residual film measuring device according to a fourth embodiment of the present invention. FIG. 16 is a longitudinal sectional shape of a material to be processed during the etching process. Illustration. FIG. 17 is a flowchart showing the operation of the embodiment of FIG. 15. [Symbol description] 1: Etching device 2: Vacuum container 3: Plasma 4: Material to be processed 5: Sample stage 8: Optical fiber The paper size applies to Chinese national standards (CNS> A4 specification (210X297 mm) (Please read first Note on the back, please fill out this page again) P. Order 1-12- 517306 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (9A, 90A, 90B: reflected light 9a, 9b, 9B: radiation Light 10: Uranium measurement device 1 1: Spectrometer 1 2, 2 2: First digital filter circuit 1 3, 2 3: Differentiator 1 4, 2 4: Second digital filter circuit 1 6, 2 6: Differential waveform Pattern library 1 5 and 2 5: Differential waveform comparator 17: Display 1 8 and 2 8: Data recorder 1 9 and 2 9: Regression analyzer 3 0, 1 3 0, 2 3 0, 3 3 0: End point Determining device 4 0: Silicon substrate 4 1, 5 1, 7 1: Cover material 4 2: Residual film thickness of cover material 4 4: Steps 5 0, 7 0: Polycrystalline silicon 52, 72: Underlayer oxide film 5 3 , 7 5, 7 7: Residual film thickness 6 0: Organic film Θ 2: Wiring material 7 3: Film 7 5, 7 6: Target residual film thickness 値 (Please read the precautions on the back before filling this page) • mr . Binding a paper The Zhang scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -13- 517306 A7 ______B7_____ 5. Description of the invention (〇7 8: gate electrode section 7 9: groove section 95A, 95B: interference light intensity 9 6: Interfering light 1 0 0 0: control device 1 0 0 1: supply device 1002: plasma generating device 1 0 3: wafer bias power supply [Detailed description of preferred embodiment] The following describes the embodiments of the present invention. In addition, in the following embodiments, those having the same functions as those in the first embodiment are given the same reference numerals as those in the first embodiment, and detailed descriptions thereof are omitted. In the following embodiments, the method for determining the end point of the semiconductor device manufacturing process according to the present invention The description is about measuring the etching amount (etching depth and film thickness) in the etching process of the material to be processed. However, the present invention is not limited to this, and can also be applied to the measurement of film formation such as plasma CVD, sputtering, and the like. The method of the amount of film formation (film thickness), etc. during processing. The first embodiment of the present invention will be described below with reference to Figs. 1 to 4. In this embodiment, when a material to be processed such as a semiconductor wafer is subjected to electrical transmission Uranium carving , And set the wavelength dependence of the differential light of the interference light on each etching amount of the material to be processed (sample wafer) for the sample (Sample) and the cover material that the processing material has (set the wavelength as Parameters) standard patterns PS and PM. Secondly, measure the same paper size as the sample material to be treated. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) — (Please read the precautions on the back before filling this page). Printed by the Consumer Affairs Cooperative of the Property Bureau -14- 517306 A7 B7 V. Description of the Invention (intensity of the complex wavelength of the interference light during the actual processing of the actual processed material (actual wafer) constituted by d) The real pattern of the wavelength dependence (different wavelength) of the differential chirp of the measured interference light intensity is compared with the standard pattern of the differential chirp and the real pattern, and the actual etching amount of the material to be processed (the end point of the process) is determined. The overall configuration of an etching device for a semiconductor wafer including an etching amount (etching depth and film thickness of an actual processing material here) measuring device of the present invention will be described with reference to Fig. 1. The etching device 1 is equipped with a vacuum container 2 and is introduced thereinto. The internal etching gas is decomposed by microwave power or the like to be converted into a plasma. The plasma 3 is used to process materials such as semiconductor wafers on the sample stage 5 4 is etched by uranium. Multi-wavelength emitted light from a measuring light source (for example, a halogen light source) included in the measuring device 10 for the amount of etching (such as etching depth and film thickness) is introduced into the vacuum container 2 through the optical fiber 8 , Is touched by the incident material 4 at a normal incident angle. As shown in FIG. 2A, the treated material 4 has silicon 4 0 as the treated material and a nitride film 41 as the cover material. The radiated light 9 A reflected by the mask material forms interference light with the radiated light reflected on the silicon surface without the mask material. That is, the interference light is an interference component caused by the difference between the mask material and the silicon. From the mask The reflected light 9 A of the curtain material is the radiated light 9 a reflected on the surface of the nitride film and the radiated light 9 b reflected on the boundary surface between the nitride film and the substrate, and these interference lights form interference light. That is, this interference light system Interference components caused by peeling of the cover material. These interference optical intermediary optical fibers 8 are introduced into the spectrometer 11 of the etching amount measuring device 10, and the etching depth of silicon and the film thickness measurement or manufacturing process of the cover material are performed according to the state. (Here is uranium engraving). Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page), τ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives -15- 517306 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by employee consumer cooperative A7 _________B7 _V. Description of the invention (12? Etching measurement device 1 〇 Equipped with: Spectrometer 1 1st ~ digital filter circuit (Digital filter) i 2, 2 2, differentiator 1 3, 2 3 、 Second digital filter circuit 1 4 、 2 4 、 Differential waveform pattern database (Pattern database) 1 6 、 2 6 、 Differential waveform comparator 1 5 、 2 5 、 Determine the end point of hungry engraving according to the results of §5. The end point determiner 30 and the display i 7 showing the determination result of the end point determiner 30. In addition, FIG. 1 shows a functional configuration of the etching amount measuring device 10, except for the etching amount measurement of the display 17 and the spectrometer 11 The actual configuration of the device 10 can be held by R 0 M or measurement data, which holds various data such as a CPU, an etching depth, a film thickness measurement processing program (Program), or a differential waveform pattern database of interference light. Memory means and an external memory R A Μ constituted devices, data input and output means and communication control means configured. This also applies to the other embodiments of FIG. 5 and the like. The multi-wavelength luminous intensity of the processed material taken by the spectrometer 11 is converted into a voltage signal based on a current detection signal based on the luminous intensity. When the spectrometer 11 outputs a plurality of specific wavelength signals as sampling signals, the time series data y i, j, y ′ i, and j are stored in a memory device such as a RAM (not shown). At this time, the first and second wavelength bands (Wave band zone) of the series data yi, j, y'i, and j are then smoothed by the first digital filter circuit 1, 2, 2 respectively. , J, Y 'i, j are stored in a memory device such as a RAM. Based on this series of smoothed data Y 1 'j, Y' i, j as the basis, the different paper sizes calculated by differentiators 13, 23 are applicable to the Chinese National Standard (CNS) A4 specification (21〇 > < 297) (%) (Please read the notes on the back before filling this page) P. Order-Line 1-16-517306 A7 B7 V. Description of the invention (14) (Please read the notes on the back before filling this page) The time series data di (j-d, i-d) are stored in a memory device such as a RAM. The time series data di, j, d'i, j of the micro coefficient 値 are smoothed by the second digital filter circuits 1 4, 2 4 respectively, and the time series data D i, j, D 'i, j are smoothed by the second digital filter circuit. Stored in a memory device such as RA Μ. Then, the series data D i, j, D ′ i, j when smoothing the micro coefficients are used to obtain a real pattern showing the wavelength dependence (with the wavelength as a parameter) of the differential chirp of the interference light intensity. Regarding the first and second wavelength bands, in order to obtain different real patterns, the device of FIG. 1 is configured as follows. That is, when the first and second wavelength bands are the same, it is regarded as a chirp that makes the differential coefficients of the first digital filter circuits 1 2, 2 2 different. For this case, the chirps of the differentiators 1 3, 2 3 are the same or different. The micro coefficients of the second digital filter circuits 14 and 24 may be the same or different. On the other hand, when the first and second wavelength bands are different, it is considered that the differential coefficients of the first digital filter circuits 1 2, 2 2 are the same or different, and the differential frequencies of the differentiators 1 3, 2 3 are also the same. Alternatively, the micro coefficients of the second digital filter circuits 14 and 24 may be the same or different. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, the first digital filter circuit, differentiator, second digital filter circuit, and differential waveform pattern data are respectively provided for the first and second wavelength bands in the structure of Figure 1. Library and differential waveform comparator. However, only one such configuration is commonly provided for the first and second wavelength bands, and the micro coefficient is switched every predetermined time. The first and second wavelength bands may alternately obtain a real pattern. On the other hand, the differential waveform pattern database 6 is set in advance to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) corresponding to the paper size. 17- 517306 A7 B7 V. Description of the invention (id becomes the subject of measurement of the amount of etching) The differential waveform pattern data 値 PS j of the interference light intensity of the aforementioned first wavelength band of the difference between the silicon of the processed material and the cover material. In addition, a cover corresponding to the processed material is set in the differential waveform pattern database 26 in advance. The differential waveform pattern data of the interfering light intensity of the aforementioned second wavelength band of the film thickness 値 μ μ. In the differential waveform comparator 15, the real pattern corresponding to the step is compared with the differential waveform pattern data P sj To obtain the layer difference (the depth from the surface of the mask material to the bottom of the etched trench of silicon). In the differential waveform comparator 25, the solid pattern and differential waveform pattern data corresponding to the film thickness of the mask material 値 Ρ M j is compared to obtain the film thickness (residual film thickness) of the cover material. As a result, the etching amount of the material to be treated, that is, the etching depth, is obtained and displayed on the display 17. In addition, in this embodiment, Each of the following examples shows a case where there is only one spectrometer 11, but for the case where the in-plane material to be measured and controlled is to be expanded and controlled, a plurality of spectrometers 1 1 may be provided. Fig. 2 A shows the middle of the etching process 2B and 2C show examples of the actual pattern of the interference light wavelength in FIG. 2B and FIG. 2C. The processed material (wafer) 4 is laminated on a silicon substrate 40 in FIG. 2A. Material 4 1. The silicon substrate in this engraving process is a material to be etched. This processing is called, for example, STI (Shallow Trench Isolation) etching for element isolation. Multi-wavelength emitted from the spectrometer 11 The light system touches the material 4 to be processed including the laminated structure of the material to be etched and the cover material at a normal incident angle. The radiated light 9 introduced into the cover material 4 1 passes through the cover material 41 and the silicon substrate. The radiated light reflected by the boundary surface formed between 4 0 9 b forms interference light. It is introduced * This paper size applies Chinese National Standard (CNS) A4 specifications (2 丨 0, 〆297 mm) I! ______ f (Please read first (Notes on the back, please fill in this page) Printed by the Consumer Cooperative of the Property Bureau-18- 517306 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (id Unshielded curtain material 41 Emitted light from the etched part 9 1 The radiated light 9 a reflected from the top surface and the radiated light 9 B reflected from the top surface of the uranium carving material 40 and the radiated light 9 A (formed from 9 a and 9 b) reflected from the cover material 4 1 Interfering light. The emitted light 9 B and 9 a are accompanied by the progress of the etching process, respectively, and the reflected positions such as A (a), B (b), and C (c) change. The reflected light is introduced into the spectrometer 11, and a signal of a change in intensity is generated by the thickness of the material to be etched 40 and the cover material layer during the etching. As shown in FIG. 2B, the original waveform of the interference light in the long wavelength region (second wavelength band: 700 nm, for example) gradually changes as the etching process proceeds. On the other hand, as shown in FIG. 2C, the original waveform of the interference light in the short-wavelength region (first wavelength band: 300 nm, for example) has a long period, and a wave having a short period overlaps and changes. This is a display of the interference component caused by the peeling of the mask material in the long wavelength region (a, b, and c surfaces in Figure 2A), and the cause of the interference light manifestation in the short wavelength region (for example, 300 nm). Changes in interference components caused by the step 44 (difference in each of the a, b, and c surfaces and the A, B, and C surfaces of the silicon substrate of the material to be etched) and the cover material. Based on the smoothing time series data Yi, j, Y'i, j across these multi-wavelength interference lights, the differential coefficients 値 time series data di, j, d 'of primary differential 値 or secondary differential 微 are calculated respectively. i, j. Fig. 2 shows the primary differential chirp and the second differential chirp of interference light with a wavelength of 700 nm, and Fig. 2 shows the primary differential chirp and the second differential chirp of interference light with a wavelength of 300 nm. From Figure 2B and Figure 2C, it is known that through these differential processing, the paper size of the cover material applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) P. Threading--19- 517306 A7 B7 V. Description of the invention (17) (Please read the precautions on the back before filling this page) Changes in interference components caused by peeling and cutting the substrate and the cover material The change in the interference component caused by the difference becomes clear. This is because the inflection rate of the material engraved by uranium (for example, the inflection rate of silicon and the nitride film of the cover material and the vacuum inflection rate of the groove portion) differs with the wavelength. The present invention is based on the fact that the layer difference between the silicon substrate and the cover material can be accurately measured by interference light in a short wavelength region, and the peeling of the cover material is determined by interference light in a long wavelength region. (Residual film thickness 41 of the cover material) is characteristic. Figure 3A shows the data of the primary differential waveform pattern of the interference light, and Figure 3B shows the data of the second differential waveform pattern in the same system. The PA, PB, and PC in Figures 3A and 3B show A (layer difference 44 = 300nm) and B (layer difference = 400; nm) of Figure 2A. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, C (layer difference 2 Differential waveform pattern data in each uranium engraved amount (500 nm). Similarly, Pa, Pb, and Pc in the maps 3A and 3B show a (residual film thickness of the cover material 42 = 95nm), b (residual film thickness of the cover material = 65 nm) in FIG. 2A, (: (cover screen Material's residual film thickness (2.5 nm) in each etching amount. In addition, the silicon etching depth 4 3 at this time is 2 0 5 nm at the A position and 3 at the B position. 3 5 nm and 4 6 5 nm at the position C. From Figures 3 A and 3 B, it is known that the primary differential waveform pattern or the secondary differential waveform pattern of the interference light, the uranium engraved amount of each processed material becomes a unique pattern. These patterns also change if the material of the material to be processed is different. Therefore, for the materials necessary for processing and the range of the uranium engraving amount, data is obtained in advance through experiments and the like, and the primary differential waveform pattern or the secondary differential waveform pattern is used as a standard It is better to keep the pattern on the recording device (16, 2 6). $ Paper size is applicable. National Standard (Liyang) 8 4 specifications (210 '/ 297 mm) " -20- 517306 A7 B7 V. Description of the Invention (18) Next, a description will be given with reference to a flowchart of FIG. 4 when an etching process is performed by the etching amount measuring device 10 of FIG. 1. The order of the etching amount of the material to be processed. Initially set the target etching amount (that is, the target layer difference and the target mask residual film thickness), and correspond to the target layer difference and the target mask residual through the pattern database 16 and 26. The film thickness differential patterns P sj and P μ j and the settings of the determinations σσ s 0 and σM0 (steps 400 and 420). That is, they are held in the differential waveform pattern database 16 in advance. A differential pattern corresponding to the target step is set among the standard patterns PA, PB, and PC of the differential chirp of a complex wavelength shown in B. Similarly, it is held in advance in the differential waveform pattern database 26. About FIG. 3A and FIG. A differential pattern corresponding to the target mask residual film thickness is set among the standard patterns of the differential chirps of the complex wavelengths shown in 3 B, P a, Pb, and P c. In the next step, sampling of interference light is started (for example, every 0 · 2 5 to 0.4 seconds) (step 4 02). That is, a sampling start command is issued as the etching process starts. The multi-wavelength luminous intensity that changes according to the progress of the etching is determined by the photodetector in the spectrometer 11 in accordance with Luminous intensity of voltage light The detection signal is detected. The light detection signal of the spectrometer 11 is digitally transformed to obtain the sampling signals yi, j, y'i, j. Second, the first digital filter 1 2, 2 2 will come from the spectrometer. The 1 multi-wavelength output signals yi, j, y'i, and j are smoothed (Filtering), and the time series data Yi, j, Y'i, and j are calculated respectively (steps 4 0 4 and 4 2 4). That is, the noise is reduced by the first digital filter, and the series data y i during smoothing are obtained. This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) _ (Please read the precautions on the back before filling this page). _B7_____ V. Description of the invention (d Secondly, the S-G method is used by the differentiators 1 3 and 23 (

Savitzky-Golay method) calculates micro coefficients d i, j, d 'i, j (steps 406 and 426). That is, through the differential processing (S-G method), the coefficient (primary or secondary) di of the signal waveform is obtained. In addition, the smoothing (S m ο 〇 t h i n g) micro coefficients of the second stage digital filters 1, 4 and 2 are respectively calculated as [J D i, j, D ′ i, j (steps 408, 428). Next, the differential waveform comparator 15 calculates σ = Σ (D i, j-P s j) 2 値 with respect to the layer difference (step 4 1 0). Similarly, in the differential waveform comparator 25, cj '= Σ (D' i, j-p M j) 2 値 is calculated for the peeling (residual film thickness) of the cover material (step 4 3 0) . Furthermore, the determination with σ '$ σM0 is performed in the end point determiner 30 (step 4 12). When aSas. And σ ′ $ σΜ〇, it is judged that the layer difference and the residual film thickness of the mask material are respectively predetermined, so that the etching process is finished, and the result is displayed on the display 17. When σ $ σ " and σ ’$ σΜ. If any of them are not satisfied, return to steps 4 0 4 and 4 2 4. Finally, set the end of sampling (step 4 1 4). Here, the calculation of the series data D i, d, 时 when smoothing the micro coefficients will be described. Digital filter circuits 1 2, 2 2, 1 4, 2 4 use examples such as secondary Bataworth low pass filter (Secondary Bataworth low pass filter). The digital filter circuits 1 and 2 and 2 have the same structure, and the coefficients b and a may be the same or different between the digital filter circuits 1 and 2 and 2. Here, only the digital filter circuit 12 will be described. The series data when smoothing by the secondary Bataworth low-pass filter is based on the formula (This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm 1-(Please read the precautions on the back before (Fill in this page) Line 1 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -22- 517306 A7 B7 V. Description of Invention (2 (j > 1)).

Yi = blyi + b2yi-l + b3yi-2- [a2Yi-l + a3Yi— 2] (1) Here, the coefficients b and a are different depending on the sampling frequency and cut-off frequency. Moreover, the coefficient of this digital filter 値 is related to the wave-range (first wavelength band) of the step, such as 275 nm to 500 nm, and the peeling (residual film thickness) of the cover material. The band (second wavelength band), for example, 525nm to 750nm may be different. For example, regarding the band of the step a 2 =-1 · 1 4 3, a 3 = 0.4128, bl = 0 · 067455, 乜 2 = 〇 · 13491, b3 = 0 · 067455 (sampling frequency 10Hz, cutoff frequency 1Hz), in the case of the band thickness of the residual film thickness of the cover material a 2 = — 0 · 0 0 0 7 3 6 1 2, a 3 = 0. 17157, bl = 0-2927l, b2 = 0 · 58542, b3 = 0 · 29271 (cutoff frequency 0 · 2 5 Η z). The time series data d t and d ′ i of the quadratic differential coefficient 系 are suitable for the smoothing differential method by using the polynomials of the five-point time series data Y i by the differentiators 1 3, 2 3, and calculated from the following formula (2). j ~ 2 di = d, i two Σ wj Y i + j ···· (2) j = one 2 This paper size applies to China National Standard (CNS) A4 (210x297 mm) — II ----- -P, (Please read the notes on the back before filling this page) Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-23- 517306 A7 _B7 _ V. Description of the invention (2) Here, about the weight (Weight) w W-2 = 2, w-1 = 1, w0 = — 2, wl = — 1 〇w2 = 2. In addition, j may be the same or different between the differentiators 13, 23. The aforementioned differential coefficient 値 may be used. The time series data di, d'i 'smooth the micro-coefficient time series data Di, D'i through the digital filter circuits 1 4 and 2 4 (secondary Bataworth-type low-pass filter)' by formula (3) (4), but the coefficients a and b of the digital filter circuits 14 and 24 may be the same or different.

Di = bldi + b2di-l + b3di-2 — [a2Di — l + a3Di— 2] _ " (3) D i = bld 'i + b 2 d, i — l + b3d' i —2 — [a2D ' il + a3D 'i— 2] ... (4) In this way, if in accordance with the engraved amount measuring device of FIG. 1, at least one set is set as PA, PB, PC, Pa'Pb, Pc as shown in FIG. 3A and FIG. 3B. The standard pattern of the differential chirp of the complex wavelength displayed is used to measure the complex wavelength intensity of the interference light of the material to be processed, and the real pattern of the differential chirp of each wavelength of the measured interference light intensity is obtained, and the standard pattern and the differential are compared. The solid pattern of 値 can be used to determine the layer difference and the residual film thickness of the cover material. For example, when you want to detect a silicon etching depth of 3 3 5 nm, that is, position B in FIG. 2, a standard pattern p of the differential wavelength of the complex wavelength corresponding to the etching amount (layer difference, residual film thickness of the cover material) B, b is set in advance. B, P b, by using the appropriate wavebook paper size for the financial institution of Guancai County (CNS) A4 (21GX297 mm) " (Please read the precautions on the back before filling this page) Alignment-Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperatives-24- 517306 A7 B7 V. Description of the invention (The consistency rate of these standard patterns for the solid pattern in the long and middle reaches the judgment 値 as. And σM0 respectively. The layer from the surface of the cover material can be detected The difference 44 is 400nm, and the residual film thickness 42 of the cover material is 65nm (the silicon depth 43 of the material to be treated is 335nm). If the standard pattern uses one or both of the primary differential pattern and the secondary differential pattern Yes. According to this embodiment, the silicon etching depth (for example, 3 3 5 nm) can be accurately measured by determining the etching amount (layer difference, residual film thickness of the cover material) of the material to be processed. Second, by displaying this The block diagram of FIG. 5 and the flowchart of FIG. 6 of the configuration of the modified example In the case where the measured interference light intensity includes many noise components, a modified example of the first embodiment for improving the accuracy of the measured etching amount. This modified example is different for each wafer, and is therefore suitable for each crystal. The circular etching conditions (such as the discharge conditions) are different, and the interference wave is different for each wafer. The target processing depth of the material to be processed (silicon, cover material) is initially set (here, the target etching depth: 4 3 in Figure 2 A) (Step 5 50). Secondly, the differential waveform pattern database 16 and 2 6 read out the differential waveform pattern and the convergence judgment 关于 (layer difference: Psj, aSQ) about the pre-stored layer difference and the residual thickness of the mask. , Residual film thickness of the mask: pMj, σM.), Differential waveform comparators 15 and 25 are set respectively. As the etching process starts, the interference light sampling is started (step 5 0 2). Secondly, it is the same as the step of FIG. 4 4 0 4, 410, 424 — 430 — like, perform steps 504 — 5 10, 52 4-530. Light from the short-spectrum and long-spectrum bands of the spectrometer 1 1 interpose the first digital filter 1 2, 2 2 and differentiation respectively. Filters 1 3, 2 3 and the second digital filter 1 4, 2 4 The series of data D i, j, D 'i, j when calculating the smoothing coefficient. Compare the paper size to the Chinese National Standard (CNS) A4 specification (210X297 mm). (Please read the precautions on the back before filling in this. Page) -5'Fang Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

-25- 517306 A7 B7 V. Description of the invention (These series of smoothed differential coefficients are D i, j, d, i, j and the differential pattern psj set in the differential waveform comparators 15 and 25 in advance. Ρ M j to calculate the layer difference 値 i at this time and the peeling amount (residual film thickness) Mi of the cover material (steps 515 and 535). Here, when ^ 7 > 075〇 (or mouth > 6 ^ 〇) , S i (or M i) obtained at the time of step 5 15 (or step 5 3 5) is not stored, and is processed by the regression analysis device 19 'The residual film thickness data at this time is not here Limitation: The series S i and M i when the layer difference 步骤 obtained in steps 5 1 5 and 5 3 5 and the peeling amount (residual film thickness) of the cover material are stored in the data loggers 1 and 2 respectively. The past tense series S j and M j are produced by (please read the precautions on the back before filling this page) by the Ministry of Economics. Hui Property Bureau Employee Consumption Cooperative Printed Regression Analyzer 1 X b (Y: Eclipse Time, X a: Calculate M by regression line) (step 5 degrees, initial film thickness, followed by the processing depth (target processing depth of the processed material is etched on the display 1) 7 Step 5 0 4, 5 14). 9, 2 9 Find the one-time regression line Y = xa * t + engraved amount (layer difference 値, residual thickness of the curtain material), t: absolute etching 値 etching speed, X b : Initial film thickness), based on the current etching amount (layer difference: S, residual film thickness of the mask material: 1, 6, 3, 6). Here, the engraving time, etching rate, and residual film thickness are the process amounts. (Here is the etching amount.) The end point determiner 30 uses these engraving amounts S and M to find S = M-(43 in Fig. 2A), and compares this with if the processing depth is greater than the target processing depth. , It is re-determined to make the end of hungry processing, and the results are not displayed. When the machining depth is below the target machining depth, 5 2 4 is returned. Finally, set the end of sampling (steps to order a paper size to apply the Chinese National Standard (CNS) A4 specifications (210 × 297 mm) -26-517306 A7 B7_____ V. Description of the invention (24 Figure 7 shows the use of the above embodiment) The results of the silicon depth measurement (calculated at steps 516 and 536). The graph shows the time variation of the silicon processing depth and the step difference from the cover material, and the state of the etching during STI processing is clearly known. In addition, In this embodiment, an etching process is performed up to a silicon depth of 506 nm (step difference of 529 nm). According to the etching amount measuring device of the present embodiment described above, the etching amount of a material to be processed in a semiconductor device manufacturing process and the like can be accurately measured. Therefore, using this system can provide a method for performing etching of a material to be processed with high accuracy. Moreover, according to the modified example, it is possible to measure an arbitrary amount of etching other than the amount of etching of the material to be processed set in a standard pattern in accordance with the modified example. In addition, the configuration of FIG. 5 is configured by a first digital filter circuit, a differentiator, and a second digital filter for the first and second wavelength bands, respectively. Wave circuit, differential waveform pattern database, differential waveform comparator, regression analyzer. However, only one such configuration is commonly provided for the first and second wavelength bands, and the differential coefficient is switched every predetermined time. It is also possible for the first and second wavelength bands to obtain a real pattern alternately. Next, a second embodiment of the present invention will be described with reference to Figs. 8, 9, 10, and 11. The structure of the present embodiment shown in Fig. 8 and Regarding the configuration of one of the wavelength bands 1 1 to 19 in Fig. 5, the operation of the end point determiner 130 is different from the operation of the end point determiner 30 in Fig. 5. The structure of the material to be processed by the engraving is shown in the figure. 9. The area of polycrystalline silicon 50 processed in this etching process is the part of unshielded curtain material 5 1 (such as a nitride film or a photoresist), and the observed interference light is reflected from the surface of polycrystalline silicon 5 0 9 Caused by the interference of A with the reflected light from the bottom oxide film 5 2 9 B. According to the paper size, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied. • 27- (Please read the precautions on the back before (Fill in this page)

1T-line 1 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 517306 A7 B7 V. Description of the invention (23 Fig. 10 The flow chart illustrates the measurement of polysilicon 5 0 etching (residual film thickness 5 by this interference light measurement) 3: Polycrystalline silicon thickness from the underlying oxide film). Initially, the target residual film of the material to be processed (polycrystalline silicon) and all standard differential patterns of polycrystalline silicon film thickness (P6) previously stored in the differential waveform pattern database 16 are set. zj) and convergence determination 値 σ z 〇 in the differential waveform comparator 15 (step 6 0 0). With the start of the etching process, the interference light sampling is started (step 6 0 2). The multi-wavelength from the spectrometer 11 1 The light mediations the first digital filter 12 and the differentiator 13 and the second digital filter 14 respectively, as in the step 4 0 4 — 4 1 0 — of the first embodiment, and obtains the series of data D i when smoothing the micro coefficients. , J. The series data D i, j when these smoothed differential coefficients are compared with the differential pattern P zj set in the differential waveform comparator 15 in advance, and the residual film 値 Z i at this time is calculated (step 6 1 5). Here, σ > σ z 〇 At this time, the Z i 步骤 obtained at step 6 1 5 is not stored, and the residual film thickness data processed at this time by the regression analyzer 19 is not limited. The residual film 値 system obtained at step 6 1 5 The time series data Z i is stored in the data recorder 18. Using the stored past time series data Z i, a regression line Y = X a * t + X b (Y: residual The film amount, t: etching time, Xa: Xa absolute 値 is the etching rate, Xb: initial film thickness), and the current residual film amount Z is calculated from the regression line (step 6 1 6). Next, at the end point The judging device 130 compares the residual film amount Z with the target residual film 値. If it is less than the target residual film, the uranium engraved amount of the material to be processed. It is planned to be applicable to this paper size. National National Standard (CNS) A4 specification ( 210X 297 mm) (Please read the notes on the back before filling out this page) • ^ 1. Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-28- 517306 A7 B7 V. Description of the invention (値 Results are displayed on the display 1 7. If it is above the target residual film, go back to step 6 0 4. Finally, the sampling is finished. (Step 6 1 4) ° However, if the target residual film is smaller than the differential waveform pattern database P zj regarding the thickness of the polycrystalline silicon film saved in advance, the situation determined in step 6 1 8 is processed as follows, so that The uranium engraving process is finished. When the residual film amount Z is equal to the minimum film thickness Ym of the differential waveform pattern database on the polycrystalline silicon film thickness stored, the target one-time regression line Y = xa * t + xb is used to calculate the target residual film 値 as The etching time of γτ (tT 2 [Υτ-Xb] / X a), and the etching processing is continued until this time t τ. FIG. 1 shows the measurement results of the residual film of polycrystalline silicon in this example. This is a differential waveform pattern database on polycrystalline silicon film thickness. The database with the minimum film thickness Ym = 4 5 nm is used to predict the target residual film 値 Y t = 2 0 nm. The linear target residual film 値 will be changed from 1 to 2 0 The etching time of nm is clearly known at 96 seconds. This makes it possible to determine the end point of the residual film amount in the non-differential waveform pattern database. In addition, the absolute 値 (two I X a |) of the slope of the linear regression line shows the etching rate, and the state of the uranium etching device can be managed by mass production management of this etching rate. That is, if the uranium etching speed is within a certain allowable plutonium, the normal operation of the etching device can be monitored, and the situation other than the allowable plutonium is abnormal. In addition, the slice (= Xb) that returns to a straight line once shows the initial film thickness of the material to be processed, and this initial film thickness can be managed by mass production to manage the film formation state before the etching process. That is, if the initial film thickness is within a certain tolerance, the normal operation of the feedback film-forming device can be monitored, and the paper size is allowed to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the back Note: Please fill in this page again.) F Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives. -29-517306 A7 __ B7 V. Explanation of the invention (Except for other cases, it is abnormal. Secondly, use Figure 1 2 and 1 3 The third embodiment. When the etching depth is managed in this embodiment, because the film thickness of the organic film of each wafer has an error, the saturated depth is measured from the initial film thickness and the measured residual film thickness. The structure of the embodiment is different from the structure of FIG. 8 in that the operation of the end point determiner 230 is different from that of the end point determiner 130 in FIG. 8. The structure of the material to be processed by etching is shown in FIG. The area (groove structure) of the organic film 60 processed in this etching process is a portion without a cover material 6 1 (such as a nitride film or a photoresist), and the observed + light-related system originates from the organic film 6 0 Surface reflected light and wiring materials 6 2 ( Such as caused by the interference of the reflected light. The method of measuring the etching amount of the organic film 60 (the depth of the groove: the distance between D and E 6 5) by measuring the interference light will be described in accordance with the flowchart of FIG. 14. Initially, the target depth of the material to be processed (organic film) 値 and all the standard differential patterns (P fj) and the convergence judgment 値 (σ F 〇) regarding the film thickness of the organic film previously stored in the differential waveform pattern database 16 ) Is set to the differential waveform comparator 15 (step 7 0 0). With the start of the etching process, the sampling of the interference light is started (step 7 0 2). The multi-wavelength light from the spectrometer 1 1 respectively intervenes the first digital filter Divider 1 2 and differentiator 1 3 and second digital filter 1 4 are the same as the step 6 0 4 -6 1 0 of the second embodiment. In the same way, the series of data D i when calculating the smoothed coefficients are compared. When smoothing the differential coefficient, the series of data D i, j and the differential pattern P fj ′ set in advance to the differential waveform comparator 15 calculate the residual film 値 F i at this time (step 7 1 5). Here, σ > σ F ◦ At this moment, the paper size applies to the Chinese National Standard (CNS) Α4 Specification (210 × 297 mm) (Please read the notes on the back before filling in this page) Order% Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics -30- 517306 A7 ____B7___ V. Description of the Invention The residual film thickness data processed by the regression analyzer 19 at this moment is not limited to this. The residual film obtained in step 7 1 5 is stored in the data recorder 18 with the time series data F i. The past time series data F i 'find the regression straight line Y = X a * t + X b (Y: residual film amount, t: etching time, X a: absolute 値 is the etching rate, Xb: initial film thickness), based on the regression line, the current residual film amount F and initial film thickness X b are calculated (step 7. 1). Next, in the end point determiner 230, the depth of the groove (= Xb — F) where the residual film amount F (64 in FIG. 13) and the initial film thickness Xb (63 in FIG. 13) appear is calculated (FIG. 13) 65), compare this groove depth with the target depth, if it is greater than the target depth, consider the etching amount of the material to be treated as predetermined, and display the result on the display 17. When it is less than the target depth, return to step 704. Finally, set the end of sampling (step 7 1 4). As described above, the etching depth during trench processing can be measured by using a regression analysis to obtain the residual film amount F and the initial film thickness Xb. Next, a fourth embodiment of the present invention will be described with reference to Figs. The structure of this embodiment shown in FIG. 15 is the same as the structure 1 1 to 19 of FIG. 12. The operation of the end point determiner 3 3 0 is different from the operation of the end point determiner 230 in FIG. 12. Furthermore, control is provided. Device 1000. The same etching device 1 is often used to etch various etched materials with different film qualities. In this case, according to the uranium engraving conditions (such as the uranium engraving gas conditions or the plasma generation power conditions or partial！ (B ias) conditions) set in the control device 1000 in advance, the control device 1 100 〇Gas time This paper size applies the Chinese National Standard (CNS) A4 specification {210X297 mm) '' -31- (Please read the precautions on the back before filling this page)

Line 1T-printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 517306 A7 B7 V. Description of the invention (2 sessions (please read the notes on the back before filling this page) Control supply device 1 0 0 1 or plasma generation device 1 0 0 2 or wafer bias power supply 003, and the etching process is performed. However, when the material to be processed by the etching process is changed to the stacked structure shown in FIG. 16 by the semiconductor element structure, the etching process is changed. It is complicated. It is difficult to process the element without damage by the simple time-controlled etching process. The etching process of such a laminated structure element will be described using FIG. 16. The polycrystalline silicon film 7 processed in this etching process BARC 7 3 (Back Anti-Reflection Coating) or cover material 7 1 (such as nitride film or photoresist) is formed on 0, and the employee of Intellectual Property Bureau of the Ministry of Economic Affairs is shaped under polycrystalline silicon film 70 The consumer cooperative prints the bottom oxide film 72. Furthermore, the bottom oxide film 72 is a gate electrode portion 7 8 of a transistor (eg, about 2 nm) in thickness and a trench portion 7 9 ( STI) Structure (for example, about 300 nm) is very different. In the processing of this structure, the BARC 7 3 is firstly etched, and then the polysilicon film 70 is etched by the same etching device. This kind of etching If the film cannot be properly etched with uranium, the underlying oxide film 7 2 of the gate electrode portion 7 8 will be peeled off too much, which will damage the device. Therefore, in the BARC 7 3 etching process, it is necessary to prevent the peeling as much as possible. Polysilicon 70 is used to control the etching. At this point, the amount of residual film of BARC is measured during the BARC 7 3 etching process. When the amount of residual film is 7 5 (for example, 20 nm), the etching condition is changed to a condition where the polycrystalline silicon is difficult to peel off. It is important to etch the remaining BARC material. Secondly, the amount of residual film (residual film thickness) of polycrystalline silicon is measured during the etching process of polycrystalline silicon 70, and a slight amount of residual film (residual film thickness) 7 7 (for example, 20 nm) Change the etching conditions to the bottom oxide film. It is difficult to peel off the paper. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297). &Quot; -32 _ 517306 Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Agency Preparation of A7 B7 V. Description of the invention (3C) It is important to etch the remaining polycrystalline silicon material. The optical system for measuring the thickness of the residual film thickness of BARC uses reflected light from the BARC surface and reflected light from the polycrystalline silicon boundary surface. Interference light 9 6. In addition, the light used for the measurement of the residual film thickness of polycrystalline silicon is the interference light 9 5 A or 9 5 B using the reflected light from the surface of the polycrystalline silicon and the reflected light from the boundary surface of the underlying oxide film. At this time, the thickness of the underlying oxide film is different from the thickness of the gate electrode portion 7 8 and the thickness of the trench portion 7 9 which is used to isolate the transistor element 7 9. Therefore, the intensity of the interference light from each part 9 5A, 9 5B different. The intensity of the interference light 9 5B from the element isolation portion 79 is greater than the intensity of the interference light 9 5A from the gate electrode portion 78. Therefore, the measurement of the residual film thickness of the polycrystalline silicon is performed on the polycrystalline silicon on the element isolation portion 79. That is, the polysilicon etching process considers this point using an interference light intensity of 9 5 B. The polysilicon is etched until the residual film thickness is 7 6 and then the polysilicon material is etched under conditions where the underlying oxide film is difficult to peel off. . The procedure for performing this etching process will be described in accordance with the flowchart of FIG. 17. Initially, the control device 1 0 0 0 is set to the etching conditions (eg, gas conditions, discharge conditions, pressure conditions, etc.) of the laminated film (eg, BARC 7 3 and polycrystalline silicon 7 0) and the target residual film of each film 7 3, 7 0 The thicknesses 値 7, 5, 6 and convergence judgment 値 (step 8 0 0). Next, all standard differential patterns (Pzj) and convergence determinations σ (σ z 〇) for all film thicknesses of the films 7 3, 70 previously stored in the differential waveform pattern database 16 are set to the differential waveforms according to each film type. Comparator 15 (step 8 0 1). In the next step, the uranium engraving process and the sampling of the interference light are started (the paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) (please read the precautions on the back before filling this page)-^^ 1 ., ιτ 线 一 • 33-517306 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Invention Description (31) 802). Next, with the instruction from the control device 1Q00, the standard differential pattern P zj and the convergence determination 値 σ Z 〇 on the first material to be etched (for example, BAR C material) are set from the differential waveform pattern database 16 To the differential waveform comparator 15 (step 803). The multi-wavelength light from the spectrometer 11 is obtained from the series data Y i, j at the time of smoothing by the first digital filter 12 (step 8 0 4). Furthermore, the intermediary differentiator 13 and the second digital filter 14 and steps 7 0 4-7 1 0 of the third embodiment are used to obtain a series of data D i, j when smoothing the micro coefficients (step 8 0, 8 0 8). When comparing these smoothed differential coefficients, the series data D i, j and the differential pattern PFj set in the differential waveform comparator 15 in advance, and obtaining the convergence σσ = Σ (Di, j— P q) 2 for the minimum convergence 値Residual film thickness. At this time, when σ S σ z. At this time, the obtained residual film thickness is set as the residual film thickness 値 Z i at this time in the data recorder 18 (steps 810, 815). When σ > σζ0, the residual film thickness 値 at this time is not stored, and is processed by the regression analyzer 19. The residual film thickness data at this time is not limited (step 8 15). Using the stored past-time series data Z i, a regression regression line Y = Xa * t + Xb is obtained by the regression analyzer 19 to calculate the current residual film thickness amount Z from the regression line (step 8 1 6 ). Next, the current residual film thickness amount Z is compared with the target residual film thickness 値 75 (for example, BARC residual film thickness 20nm) from the control device 100 in the end point determiner 3 30. If it is the target residual film 値Below 75, the etching amount of the material to be treated is determined to be predetermined, and the result is displayed on the display 17. Simultaneously switch the uranium engraving conditions for the following engraving treatments (polycrystalline silicon paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm))--34- (Please read the precautions on the back before filling this page) P. Order line 517306 A7 B7_ V. Description of the invention ((Please read the precautions on the back before filling this page) to remove the BARC etching conditions) (step 8 1 8). When the target residual film is more than 値, return to step 8 0 4. Switch to the next etching process (barc uranium etching conditions where polycrystalline silicon is difficult to be stripped). For example, the control device 1 0 0 controls the wafer bias power 1 0 3, and the etching residual film portion is at a preset value. After the time has elapsed, switch the engraving conditions (steps 8 to 19). The uranium of the next film type (for example, polycrystalline cutting 70) is engraved under the preset engraving conditions, and the supply device 1 0 0 1 or plasma is controlled. Generate device 1 0 2 or wafer bias power supply 1 0 3, and set the standard differential pattern (P zj, σ 2 〇) on the residual film thickness 7 6 of the next film type (such as polycrystalline silicon) to compare with the differential waveform Device 15 (step 80 0 3), and then Perform steps 8 0 4 to 8 1 8. In the end point determiner 3 3 0, determine the amount of residual film thickness Z of the polycrystalline silicon as the target residual film thickness 値 7 6 (for example, the polycrystalline silicon residual film printed by the staff consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs). Thickness 20 nm) (step 8 1 8), and if the result is displayed on the display 17, simultaneously switch the etching conditions for the next etching process (polycrystalline silicon etching conditions where the underlying oxide film is difficult to peel off) (step 8 18). This etching The process (polycrystalline silicon etching conditions where the underlying oxide film is difficult to peel off) etches the remaining polycrystalline silicon film by time control. After a preset time has elapsed, the judgment of the switching of the etching conditions is made (step 8 19). When there is no next uranium During the engraving process, the end of the engraving process and the setting of the end of sampling are performed (step 8 1 4). As described above, if the method of the second embodiment is followed, even if the differential pattern database of the residual film thickness of the material to be processed is not Sufficient. The thickness of the residual film can still be predicted. Furthermore, the paper size of the differential pattern database on the thickness of the residual film is subject to the Chinese National Standard (CNS) A4 regulations. (210X297 mm) 35 · 517306 A7 B7 V. Description of the invention (In 3 $, the sampling wafer does not need to be completely etched, and the sampling wafer can be reduced. In addition, the etching rate is obtained by the regression analysis of the present invention, and the etching rate is Monitoring of each wafer enables mass production management, which can prevent defects in the product wafer from occurring in advance. Furthermore, the initial film thickness of the material to be processed can be calculated by the regression analysis of the present invention, and the results can be fed back to The film forming device can perform mass production management of the consistent processing of the film forming device and the etching device. According to the method of the third embodiment, the etching depth can be calculated with high accuracy even if the initial film thickness of the material to be processed varies, and the etching process can be accurately determined as the target etched depth. In addition, according to the method of the fourth embodiment, in the etching process of a material to be processed having a laminated film structure, the residual film thickness is measured when each film is etched, and the etching conditions are switched at a predetermined residual film thickness. The etch peeling of the underlying film can be reduced. In addition, in the polysilicon etching of the gate electrode, the residual film thickness of the polysilicon can be accurately determined by measuring the thickness of the polysilicon residual film using the interference light from the element isolation portion. The number of defective round pieces is the minimum. In addition, in each of the above embodiments, a multi-wavelength radiated light was emitted from a spectrometer having a light source, and the measurement was performed using interference light from reflected light from a material to be processed. On the other hand, a spectrometer without a light source may be used as a light source with multi-wavelength radiation emitted by a plasma as a light source. In addition, the present invention has the following features. (1) An etching method, which is characterized by: the etching stored in the sample. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

Printed by 1T Consumer Intellectual Property Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs-36- 517306 A7 B7 V. Description of the invention (data measured during the process of 'using this stored historical data to predict the etch depth in the aforementioned etch, at a predetermined etch depth (2) A method for engraving uranium, characterized in that, in the method for engraving a material to be processed without a base film, 'measure the peeling amount of the mask formed on the material to be processed and from the mask. The etching layer difference between the bottom surface of the material to be processed on the top surface of the curtain and the etching depth of the material to be processed is managed. (3) A method for engraving uranium, characterized by using interference light data during the etching of the sample, The thickness of the residual film of the etched portion of the sample is predicted, and the foregoing etching is terminated at a predetermined thickness of the residual film. (4) A uranium etching method, characterized in that: in damascene etching, the etching process is used According to the interference light data, the initial film thickness is predicted to determine the trench depth, and the aforementioned etching is terminated at a predetermined trench depth. (5) An etching method, characterized in that: In the method of the gate material formed on the underlayer films having different thicknesses, interference light is measured on a thick portion of the underlayer film, the residual film thickness of the gate material formed on the underlayer film with a thick thickness is measured, and the gate is managed. The thickness of the electrode material is 0 (6), and a method for engraving uranium, characterized in that, during the engraving of a material to be processed in which a plurality of films are laminated, interference light from the material to be processed is measured, and each of the foregoing films is switched The digital filter processes the data of the interference light, and each of the aforementioned films manages the film thickness. (7) An etching method characterized in that in the BARC engraving, the interference light measurement book measured by the material to be processed during etching is used. Paper size applies Chinese National Standard (CNS) A4 specification {210X297 mm) (Please read the precautions on the back before filling out this page) Thread 1 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy -37- 517306 A7 _ B7_ 5 2. Description of the Invention (The thickness of the BARC film prevents the basal layer from being peeled off by the uranium engraved material. (8) A method of a semiconductor device, characterized in that in the manufacture of a semiconductor element having a sTI portion When performing the etching of P 01 y-si forming a part of the semiconductor element, the above-mentioned etching of P ο 1 y-S i is managed by the residual film thickness of Poly — Si formed on the STI portion. (Please (Please read the notes on the back before filling this page) Order the paper printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) -38-

Claims (1)

517306 A8 B8 C8 D8 々, patent application scope 1 · A method for measuring the processing amount of a film in a semiconductor device manufacturing process includes: a) setting a predetermined processing of interference light to a film of a first material to be processed (4, 5, etc.) A step of differentiating the standard pattern of the first material to be processed with a wavelength as a parameter; b) measuring the interference of a plurality of wavelengths with respect to a second material to be processed (4, 5, etc.) having the same structure as the first material to be processed; Light intensity, a step of obtaining a real pattern with the measured differential wavelength of the interference light intensity as a parameter; and c) obtaining the second object from the standard pattern of the first material to be processed and the real pattern The processing amount (4 3) of the film of the processing material. (Measurement method of process amount: predetermined process amount—switching process conditions) 2 · —A method for measuring the amount of film in the semiconductor device process, including: (Please read the precautions on the back before filling this page) Intellectual Property Bureau of the Ministry of Economic Affairs Employee consumer cooperatives print and process the logos. Seek out the plans, set the materials for the maps, preliminarily, the actual cases, and the rationale for the treatment. The pictures are strongly counted on the diaphragm and are fixed. Participation, the .i pre-) _ is related to the case of the long-standing case 2 and 5 of the wave diagram 3) theory, the number of quasi-43 places in the 4 reference mark C of { For 5 points, the length of the film is measured, the length of the R material of the micro material a is 4 and the length of the E material is divided by the degree. The strength of the long material is treated by the M position. Two pairs of micro-synthesis; the second step of the theory of the first step of the case is the test of the first step of the establishment of the light step, the second step of the first step, the second step of the first step, the second step of the first step, and the second step of the second step. This step should be based on the principle that the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -39 · 5 17306 A8 B8 C8 D8 VII. Patent application scope Switching process conditions for processing steps. (Please read the precautions on the back before filling in this page) (Etching method: First example: Determine the uranium engraved amount from the pattern: Figures 1 to 4) 3 · —A measure of the etching amount of the material to be treated The method for measuring the amount of etching includes: a) setting the differential of the interference light of the predetermined amount of etching of the first material to be processed (4 1) including the cover material (4 1), the wavelength of the first material to be processed with the parameter as a parameter Step (400) of the standard pattern (Ps); b) setting the standard pattern (P) of the mask material with a wavelength as a parameter of the differential of the interference light of the predetermined etching amount of the mask material of the first material to be processed; Step (4 2 0) of μ); c) Measure the interference light intensity of the second processed material (4) having the same structure as the first processed material with respect to a plurality of wavelengths, and obtain the measured interference light. The step of differentiating the intensity of the chirped wavelength as a parameter of the solid pattern (402 — 40 8, 424 — 428); and printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs d) According to the standard pattern of the first processed material and the cover The standard pattern (Ps and Pm) of the curtain material and the real pattern are obtained The second etching treatment material amount (44) of step (410,430,412). (Etching amount measurement method: Etching amount obtained by regression analysis: Deformation of the first embodiment: Figs. 5-7). 4 · An etching amount measurement method for measuring the etching amount of a material to be processed, including: The first treatment of the cover material (4 1), the differential light of the interference light of each of a plurality of predetermined uranium engraving quantities of the physical material (4), the wavelength of this paper is in accordance with the Chinese National Standard (CNS) A4 specification (210乂 297 mm 1 ~ * one " one 517306 A8 B8 C8 D8 VI. The steps of applying the patent for the standard pattern (Ps) of the first processed material (50 0); (Please read the note on the back first Please fill in this page again for details) b) Set the standard pattern (PM) of the mask material with the wavelength as a parameter of the differential light of the interference light of each of the plurality of predetermined etching amounts of the mask material of the first material to be processed. Step (520); c) measuring the interference light intensity of the second processing material (4) having the same structure as the first processing material with respect to a plurality of wavelengths, and obtaining the differential 値 of the measured interference light intensity Of a solid pattern with a wavelength as a parameter (502-508, 52 4- 528); d) the step of obtaining the worms of the second to-be-processed material according to the standard pattern of the first to-be-processed material and the standard patterns (Ps and pM) of the cover material and the real pattern (510-515, 530-535); and e) by using a regression analysis of the engraved amount of the second processed material obtained in the past obtained in step d), to determine the current second processed material Step (5, 6, 3, 6) of the etching amount (S, M) of the material. 5. A method for measuring the etching amount of uranium to measure the etching amount of the material to be processed, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, including: a) setting each of a plurality of predetermined etching amounts including the first material to be processed (5) A step (600) of the standard pattern (Pz) of the first processed material with the wavelength as a parameter of the differential light of the interference light; b) the measurement of the plural wavelengths and the same composition as the first processed material The interference light intensity of the second to-be-processed material (5) is a step of obtaining a real pattern with the wavelength of the differential chirp of the measured interference light intensity as a parameter. This standard is applicable to the Chinese National Standard (〇 阳). 4 Specifications (210 mm 297 mm) ~: " -41-517306 A8 Β8 C8 D8 VI. Patent Application Scope (6 0 2-6 0 8); (Please read the precautions on the back before filling this page) c ) A step (6 10-6 15) for obtaining an etching amount of the second material to be processed based on the standard pattern and the real pattern of the first material to be processed; and d) obtained by using step c) by using Analysis of the etching amount of the second processed material in the past , A step of predicting the time when the amount of etching of the second material to be treated is the target time (616, 618). 6. The method for measuring the amount of etching as described in item 5 of the scope of the patent application, further comprising: using the regression analysis of the etching amount of the second material to be processed obtained in step c) to obtain the etching Steps to speed. 7. The method for measuring the amount of etching as described in item 5 of the scope of the patent application, further comprising using the regression analysis of the uranium engraved amount of the second processed material obtained in the past obtained in step c) to obtain A step of initial thickness of the second material to be processed. (Measurement of etching depth: Third embodiment: Figures 1 2-1 4) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 8. The method for measuring the etching amount as described in item 5 of the scope of patent application, which is more equipped with According to the regression analysis of the engraved amount of the second processing target material obtained in step c), 'the step of determining the initial film thickness and the residual film thickness of the second processing target material' A step of obtaining an initial depth and a residual film thickness of the second material to be processed to obtain a saturated depth of the second material to be processed. (Multilayer structure film thickness management: scheduled residual film-etching condition switching: Fig. 1 5-1 7) 9--42 of a material to be processed in a semiconductor device with a plurality of laminated films (CNS) A4 specification (210X297 mm Γ 517306 A8 B8 C8 D8) 6. Application method for patent application process, including: (Please read the precautions on the back before filling this page) Steps for measuring the residual film thickness of the material to be processed; And if the thickness of the residual film is predetermined, switch the etching conditions to perform the etching process. (Multilayer structure film thickness management: residual film management—etching condition switching: Figure 1 5-1 7) 1 0 The method for etching a material is formed on a base film having portions having different thicknesses in a semiconductor element in which a plurality of layers are laminated, and includes: a step of measuring a residual film thickness of the material to be processed formed on the thick base film portion; And the step of managing the etching process based on the measured residual film thickness of the processed material. 1 1. The etching method of the processed material as described in item 10 of the scope of patent application It also includes the step of switching the uranium engraving conditions for etching treatment if the thickness of the residual film of the material to be measured is a predetermined plutonium. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Film management—Etching condition switching: Figure 1 5—1 7) 12 · —A method for engraving a material to be processed in a semiconductor element with a plurality of laminated films, including: a) Setting the first material to be processed (7) The step (800-801) of the standard pattern (Pz) of the first processed material with a wavelength as a parameter of the differential light of each of a plurality of predetermined engraved amounts of interference light; * b) separately measuring the plural wavelengths About China National Standard (CNS) (210X297 mm) ~ 'for the paper that is different from the first processed material Photo: -43- 517306 A8 B8 C8 D8 VI. Scope of patent application (Please read the notes on the back before filling (This page) The step of obtaining the real pattern with the interference light intensity of the second processed material (7) having the same structure as the parameter with the wavelength of the differential chirp of the measured interference light intensity as a parameter (8 0 2 — 8 0 8) C) according to the clause Step (810-815) of determining the etched amount of the second material to be processed by the standard pattern of the material to be processed and the real pattern; d) by using the second object to be processed obtained in step c) in the past Regression analysis of the amount of etching of the material to obtain the residual film thickness of the second material to be processed (8 1 6, 6 1 8): and e) if the obtained residual film thickness of the material to be processed is predetermined In the case of plutonium, the uranium engraving conditions are switched for the uranium engraving process. (Processing quantity measurement device: higher-level application patent scope: corresponding to patent application scope item 1) 13 · —A processing quantity measuring device for a film in a semiconductor device manufacturing process, including: setting a first material to be processed (4, 5 The unit of the standard pattern of the first processed material with the wavelength as a parameter of the differential processing of the interference light of the predetermined processing amount of the film; printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs on the multiple wavelengths separately A unit of a solid pattern having the same interference light intensity of a second processed material (4, 5, etc.) of the same processed material to obtain a real pattern with a wavelength of a differential chirp of the measured interference light intensity as a parameter; and A unit of a standard pattern of the material to be processed and the solid pattern to obtain a film processing amount (43) of the second material to be processed. (Process quantity measuring device: predetermined process quantity-process condition switching: apply Chinese National Standard (CNS) A4 specification (210X297 mm) to this paper size) -44-517306 A8 B8 C8 D8 Item) (Please read the precautions on the back before filling in this page) 1 4 · A device for measuring the throughput of a film in a semiconductor device manufacturing process, including: setting a predetermined processing volume for a first material to be processed (4, 5, etc.) The unit of the standard pattern of the first processed material with the wavelength as a parameter of the differential of the interference light; the measurement of the multiple wavelengths with respect to the second processed material (4, 5, etc.) having the same structure as the first processed material. The unit of the real pattern that uses the wavelength of the differential intensities of the measured interference light intensity as a parameter to determine the interference light intensity; and the second processed object is obtained from the standard pattern of the first processed material and the real pattern. A unit of the processing amount (4 3) of the film of the material; and a unit of switching the processing conditions for processing if the processing amount of the film of the second material to be processed is predetermined. (Etching amount measuring device: First embodiment: Corresponding to the etch amount obtained by pattern uniformity: Patent application scope Item 3: Figures 1 to 4) Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 1 5 The etching amount measurement device g for the etching amount of the material includes: setting a differential chirp of the interference light of a predetermined etching amount of the first to-be-processed material (4) including the cover material (4 1); A unit of a standard pattern (P s) of the material to be processed; a standard pattern (Pm) of the mask material to set the differential of the interference light of a predetermined etching amount of the mask material of the first material to be treated with a wavelength as a parameter ) Unit; this standard is applicable to China ’s national standard (〇 Chan) 8 4 specifications (210 father 297 mm) — -45-517306 A8 B8 C8 D8 6. Scope of patent application (please read the precautions on the back first) Fill in this page again.) Measure the interference light intensity of the second processed material (4) with the same structure as the first processed material with respect to a plurality of wavelengths, and find the wavelength of the differential chirp of the measured interference light intensity as Parametric Real Pattern Unit ; And a unit that determines the etching amount (4 4) of the second material to be processed according to the standard pattern of the first material to be processed, the standard patterns (ps and pM) of the cover material, and the real pattern. (Etching amount measuring device: Estimation of etching amount by regression analysis: Deformation of the first embodiment: Corresponds to the scope of patent application No. 4: Figure 5-7) 1 6 · —Uranium etching amount for measuring the etching amount of the material to be processed The measuring device includes: setting the differential of the interference light for each of a plurality of predetermined etching amounts of the first material to be processed (4 1) including the cover material (4 1); Standard pattern (P s) unit; set the standard pattern (P of the mask material with the wavelength as a parameter of the differential light of the interference light of each of the plurality of predetermined etching amounts of the mask material of the first material to be processed) M); printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs on multiple wavelengths to separately measure the intensity of interference light on the second processed material (4) having the same structure as the first processed material, and obtain the measured The wavelength of the differential chirp of the interference light intensity is a parameter of the solid pattern unit. According to the standard pattern of the first material to be processed and the standard pattern (Ps and Pm) of the cover material and the solid pattern, the first Erosion of two processed materials The quantity of the unit; and · By using the obtained original etched amount of the second processed material, the original silver sheet thickness is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -46- 517306 A8 B8 C8 D8 6. Regression analysis of patent application scope 'Calculate the unit of the current etching amount (S, M) of the second processed material. (Etching amount measuring device: Estimation of etching amount by regression analysis: Second embodiment: Corresponding to the scope of patent application No. 5: Figure 8 — 1 1) 1 7 · An etching amount measuring device for measuring the etching amount of a material to be processed, Containing: a unit for setting a standard pattern (Pζ) of the first material to be treated, which is a derivative of a thousand of the light involved in each of a plurality of predetermined etching amounts of the first material to be treated (5); A unit for measuring the interference light intensity of the second processing material (5) having the same configuration as the first processing material, and obtaining a unit of a solid pattern with the wavelength of the differential chirp of the measured interference light intensity as a parameter; A unit for determining the etched amount of the second processed material by the standard pattern of the first processed material and the real pattern; and regression analysis using the obtained etched amount of the second processed material in the past , The unit that predicts the moment of uranium engraving of the second material to be the target plutonium. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) (etching depth measurement: third embodiment: Figure 1 2-1 4) 1 8 · If the scope of patent application is 17 The etching amount measuring device according to the above item, further comprising: _ using the regression analysis of the obtained etching amount of the second processed material in the past, to determine the initial film thickness of the second processed material and Residual film thickness unit; and based on the initial film thickness and residual film thickness of the second material to be processed. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -47-Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperatives 517306 A8 B8 C8 __D8 6. The scope of the patent application for the unit to determine the uranium engraving depth of the second processed material. (Film thickness management of a multilayer structure: predetermined residual film-etching condition switching: Fig. 1 5-1 7) 1 9 · A processing device for a material to be processed in a semiconductor element in which a plurality of layers are laminated includes: A unit for the thickness of the residual film of the material; and a unit for switching the etching conditions to perform the etching process if the thickness of the residual film is predetermined. (Multilayer structure film thickness management: Residual film management—Uranium engraving condition switching: Corresponds to item 10 of the scope of patent application: Figure 1 5-1 7) 2 0 · —Etching device for the material to be processed, which is based on a plurality of stacked layers The semiconductor element of the layer film is formed on the underlying film having portions having different thicknesses, and includes a unit for measuring the residual film thickness of the material to be processed formed on the thick underlying film portion; and the substrate to be measured according to the measurement. This unit is used to manage the residual film thickness of the processing material. 2 1 · The erosion% _ g 'of the material to be treated as described in item 20 of the scope of the patent application, which further includes switching the etching conditions to perform uranium if the thickness of the residual film of the material to be measured is predetermined. Engraved processing unit. (Film thickness management for multilayer structures: Residual film management—Uranium engraving condition switching: Corresponding to item 12 of the patent application scope: Figure 1 5 — 1 7) 2 2 · —Semiconductor elements with multiple layers of laminated film being processed Material etching equipment, including: This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) -48- 517306 A8 B8 C8 D8 6. Scope of patent application (please read the precautions on the back before filling out this page) Set the differential of the interference light for each of the plurality of predetermined etching amounts of the first material (7) A unit of a standard pattern (P z) of the first material to be processed with a wavelength as a parameter; the interference light intensity of the second material to be processed (7) having the same configuration as the first material to be processed is measured with respect to a plurality of wavelengths, Obtaining a unit of a solid pattern with the measured differential wave length of the interference light intensity as a parameter; obtaining the etching of the second material to be processed based on the standard pattern of the first material to be processed and the solid pattern A unit for measuring the amount; a unit for obtaining a residual film thickness of the second to-be-processed material by a regression analysis using the obtained past etching amount of the second to-be-processed material; and if the obtained to-be-processed If the residual film thickness of the material is a predetermined thickness, the unit that switches the etching conditions and performs the etching process. 2 3 · A method for determining the end point of a semiconductor device manufacturing process, which includes: a) a first differential wavelength of a predetermined engraved amount of interference light having a predetermined engraved amount of kf including a cover material, a first wavelength-dependent parameter; The standard pattern of the material to be processed is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. B) Setting the differential light of the predetermined etching amount of the cover material of the first material to be treated. A step of a standard pattern of the cover material; c) each of a plurality of wavelengths is used to measure an interference light intensity of a second processing material having the same structure as the first processing material, and a differential value of the measured interference light intensity is obtained; The step of the solid pattern whose wavelength is a parameter; 1 d) According to the standard pattern of the first material to be processed and the specimen paper size of the cover material, China National Standard (CNS) A4 (210X297 mm) -49- 517306 A8 B8 C8 D8 VI. Steps to apply for a patent to apply the quasi-pattern and the real pattern to obtain the etching amount of the second material to be processed; and (Please read the precautions on the back before filling this page) e ) The step of determining the end point of the process based on the obtained etching amount of the second material to be processed. 2 4 · —A method for determining the end point of a process, which includes: setting a standard pattern of the differential light of the interference light of a predetermined step of the first processed material with a wavelength as a parameter, and a predetermined mask for the processed material Step 9 of the differential pattern of the interference light of the residual film thickness based on the standard pattern of the wavelength as a parameter. For a plurality of wavelengths, the intensity of the interference light with respect to the second processing material having the same structure as the first processing material is measured separately. A step of measuring a differential pattern of the interference light intensity based on a real pattern with a wavelength as a parameter; and determining the difference between the layer difference of the second material to be treated and the thickness of the mask residual film according to the standard pattern and the differential pattern of the real pattern Step; and a step of determining the end point of the process based on the obtained layer difference of the second processed material and the thickness of the mask residual film. 2 5. A device for determining the end point of a semiconductor device manufacturing process, characterized in that printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs includes: a) setting a differential of interference light to a predetermined etching amount of a first material to be processed including a cover material A unit of a standard pattern of the first processed material having a wavelength as a parameter; b) setting a differential of the interference light of a predetermined etching amount of the cover material of the first processed material to the mask of the wavelength as a parameter Standard and quasi-patterned units of curtain materials; This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) -50- 517306 A8 B8 C8 D8 VI. Application for patent scope (please read the notes on the back before filling (On this page) C) Measure the interference light intensity of the second processed material having the same structure as the first processed material with respect to a plurality of wavelengths, and obtain the actual wavelength using the differential chirp of the measured interference light intensity as a parameter. A unit of a pattern; d) a unit for obtaining an etching amount of the second material to be processed based on the standard pattern of the first material to be processed and the standard pattern of the cover material and the real pattern; and e) A unit for determining the end point of the process based on the obtained etching amount of the second material to be processed. 2 6 · — An end point determination device for a process, which includes: a standard pattern with a wavelength as a parameter for setting a differential of the interference light of a predetermined step of the first material to be processed, and a predetermined mask for the material to be processed The unit of the standard pattern with the wavelength as the parameter of the differential light of the interference light of the residual film thickness is measured for the complex wavelength of the interference light intensity with respect to the second processing material having the same structure as the first processing material. The unit of the real pattern with the wavelength as the parameter of the differential 値 of the measured interference light intensity; the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the standard pattern and the real pattern of the differential 値 to obtain the second processed material The unit of the layer difference and the thickness of the mask residual film; and the unit of determining the end point of the process based on the obtained layer difference of the second processed material and the thickness of the mask residual film. This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) • 51-