TWI514465B - - Google Patents
Info
- Publication number
- TWI514465B TWI514465B TW101151223A TW101151223A TWI514465B TW I514465 B TWI514465 B TW I514465B TW 101151223 A TW101151223 A TW 101151223A TW 101151223 A TW101151223 A TW 101151223A TW I514465 B TWI514465 B TW I514465B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210243815.3A CN102751160B (en) | 2012-07-13 | 2012-07-13 | The lithographic method of etching device and correspondence |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201403703A TW201403703A (en) | 2014-01-16 |
| TWI514465B true TWI514465B (en) | 2015-12-21 |
Family
ID=47031247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101151223A TW201403703A (en) | 2012-07-13 | 2012-12-28 | Etching device and corresponding etching method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102751160B (en) |
| TW (1) | TW201403703A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5713043B2 (en) * | 2012-05-07 | 2015-05-07 | 株式会社デンソー | Manufacturing method of semiconductor substrate |
| CN104124307A (en) * | 2014-07-22 | 2014-10-29 | 广东爱康太阳能科技有限公司 | Reactive ion etching process and device of crystalline silicon solar cell |
| CN104503497B (en) * | 2014-11-21 | 2017-12-05 | 京东方科技集团股份有限公司 | Pressure protective system and pressure protection method for etching apparatus |
| CN104898540A (en) * | 2015-04-07 | 2015-09-09 | 哈尔滨工业大学 | PLC-based ICP plasma generation system control method |
| CN104975351B (en) * | 2015-07-09 | 2018-01-02 | 江苏德尔科测控技术有限公司 | The sensor monocrystalline silicon etching device of machining accuracy can be improved |
| CN104975350B (en) * | 2015-07-09 | 2017-12-01 | 江苏德尔森传感器科技有限公司 | Horse positioner in sensor monocrystalline silicon etching process |
| CN116313779A (en) * | 2023-05-25 | 2023-06-23 | 粤芯半导体技术股份有限公司 | Preparation method of deep trench isolation structure with high depth-to-width ratio |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5593540A (en) * | 1992-10-19 | 1997-01-14 | Hitachi, Ltd. | Plasma etching system and plasma etching method |
| TW517306B (en) * | 2001-09-05 | 2003-01-11 | Hitachi Ltd | Method and device to determine the end point of semiconductor device processing and the processing method and device of the processed material using the method |
| TW200924048A (en) * | 2007-11-20 | 2009-06-01 | Applied Materials Inc | Plasma etch process for controlling line edge roughness |
| US20110244686A1 (en) * | 2010-03-31 | 2011-10-06 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736326B (en) * | 2008-11-26 | 2011-08-10 | 中微半导体设备(上海)有限公司 | Capacitively coupled plasma processing reactor |
| CN102768933B (en) * | 2009-01-31 | 2017-06-30 | 应用材料公司 | Method for etching |
| CN201725780U (en) * | 2010-05-27 | 2011-01-26 | 无锡尚德太阳能电力有限公司 | Anomaly detection system for plasma etching machine |
-
2012
- 2012-07-13 CN CN201210243815.3A patent/CN102751160B/en active Active
- 2012-12-28 TW TW101151223A patent/TW201403703A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5593540A (en) * | 1992-10-19 | 1997-01-14 | Hitachi, Ltd. | Plasma etching system and plasma etching method |
| TW517306B (en) * | 2001-09-05 | 2003-01-11 | Hitachi Ltd | Method and device to determine the end point of semiconductor device processing and the processing method and device of the processed material using the method |
| TW200924048A (en) * | 2007-11-20 | 2009-06-01 | Applied Materials Inc | Plasma etch process for controlling line edge roughness |
| US20110244686A1 (en) * | 2010-03-31 | 2011-10-06 | Lam Research Corporation | Inorganic rapid alternating process for silicon etch |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102751160B (en) | 2016-02-10 |
| CN102751160A (en) | 2012-10-24 |
| TW201403703A (en) | 2014-01-16 |