CN104124307A - Reactive ion etching process and device of crystalline silicon solar cell - Google Patents
Reactive ion etching process and device of crystalline silicon solar cell Download PDFInfo
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- CN104124307A CN104124307A CN201410348461.8A CN201410348461A CN104124307A CN 104124307 A CN104124307 A CN 104124307A CN 201410348461 A CN201410348461 A CN 201410348461A CN 104124307 A CN104124307 A CN 104124307A
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000008569 process Effects 0.000 title claims abstract description 21
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 118
- 239000010703 silicon Substances 0.000 claims abstract description 118
- 238000005530 etching Methods 0.000 claims abstract description 97
- 230000001681 protective effect Effects 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 40
- 239000010977 jade Substances 0.000 claims description 17
- 235000008216 herbs Nutrition 0.000 claims description 11
- 210000002268 wool Anatomy 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 abstract description 165
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000012495 reaction gas Substances 0.000 abstract description 4
- 239000004341 Octafluorocyclobutane Substances 0.000 abstract 1
- 229910018503 SF6 Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 abstract 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 abstract 1
- 229960000909 sulfur hexafluoride Drugs 0.000 abstract 1
- 238000010248 power generation Methods 0.000 description 11
- 230000006872 improvement Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a reactive ion etching process of a crystalline silicon solar cell. The reactive ion etching process of the crystalline silicon solar cell includes: placing a texturing silicon slice in a reactive ion etching device which comprises a gas system used to generate reaction gas, etching gas and protection gas and an electrode panel; placing the silicon slice in the electrode panel, and feeding the reaction gas and the etching gas into the electrode panel so as to performing etching processing on the obverse texturing surface of the silicon slice; feeding the protection gas into the electrode panel so as to form a protection layer through reaction of the protection gas and the side wall of the silicon slice. The etching rate in the vertical direction of the obverse texturing surface of the silicon slice is larger than the etching rate of the side wall of the silicon slice. A micro structure is formed on the obverse texturing surface of the silicon slice. The reaction gas is oxygen. The etching gas is sulfur hexafluoride gas. The protection gas is octafluorocyclobutane gas. Correspondingly, the invention further discloses the reactive ion etching device applied into the reactive ion etching process. By adopting the reactive ion etching process and the reactive ion etching device of the crystalline silicon solar cell, value of a cell short circuit current is significantly improved, and electricity generating efficiency of the crystalline silicon solar cell is improved.
Description
Technical field
The present invention relates to battery technology field, relate in particular to a kind of reactive ion etching process of crystal silicon solar batteries and a kind of reactive ion etching equipment of crystal silicon solar batteries.
Background technology
Solar cell is a kind of solar radiant energy that effectively absorbs, utilize photovoltaic effect transform light energy to be become to the device of electric energy, when solar irradiation is on semiconductor P-N knot (P-N Junction), form new hole-duplet (V-E pair), under the effect of P-N knot electric field, hole flows to P district by N district, and electronics flows to N district by P district, after connection circuit, just forms electric current.Because being utilizes the photovoltaic effect of various potential barriers solar energy to be converted to the solid semiconductor device of electric energy, therefore claim again solar cell or photovoltaic cell, be the significant components of solar array power-supply system.Solar cell mainly contains crystal silicon (Si) battery, San Wu family semi-conductor cell (GaAs, Cds/Cu
2s, Cds/CdTe, Cds/InP, CdTe/Cu
2te), without machine battery, organic battery etc., wherein crystal silicon solar batteries occupies market mainstream leading position.The stock of crystal silicon solar batteries is that purity reaches 0.999999, the p type single crystal silicon of resistivity more than 10 Europe centimetre, comprises the parts such as front matte, front p-n junction, front antireflective coating, positive backplate.In component package, be that front is subject to plane of illumination to add printing opacity cover plate (glass as saturating in height and EVA) protection, prevent that battery is subject to the radiation damage of the interior high energy electron of outer space Van Allen belt and proton.Because cell power generation loss in efficiency is mainly photon reflection and diffusion loss on the matte of front, therefore how to reduce photon reflection, utilize diffusion to increase effective penetration degree of depth, and then raising battery efficiency will be an important topic.
Summary of the invention
Technical problem to be solved by this invention is, a kind of reactive ion etching process that can effectively improve the generating efficiency of crystal silicon solar batteries is provided.
Technical problem to be solved by this invention is also, a kind of reactive ion etching equipment that can effectively improve the generating efficiency of crystal silicon solar batteries is provided.
In order to solve the problems of the technologies described above, the invention provides a kind of reactive ion etching process of crystal silicon solar batteries, comprising:
The silicon chip of making herbs into wool is put into reactive ion etching equipment, and described reactive ion etching equipment comprises gas system and electrode plate, and described gas system is for generation of reacting gas, etching gas and protective gas;
Silicon chip is placed in to electrode plate, passes into reacting gas and etching gas the front matte of silicon chip is carried out to etching processing;
Pass into protective gas, described protective gas reacts with the sidewall of silicon chip and forms protective layer, and described silicon chip is greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre in the etch rate of the vertical direction of front matte;
The front matte of described silicon chip forms micro-structural;
Wherein, described reacting gas is O
2, described etching gas is SF
6, described protective gas is C
4f
8.
As the improvement of such scheme, described etching gas SF
6flow set be 8 ~ 18 cm
3/ min, described reacting gas O
2flow set be 2 ~ 13cm
3/ min, described protective gas C
4f
8flow set be 8 ~ 18 cm
3/ min.
As the improvement of such scheme, pass into etching gas SF
6set of time be 2 ~ 8 seconds, pass into reacting gas O
2set of time be 2 ~ 8 seconds, pass into protective gas C
4f
8set of time be 1 ~ 7 second.
As the improvement of such scheme, the dark Kuan Bi≤20:1 of described micro-structural.
As the improvement of such scheme, the power setting of described electrode plate is 80 ~ 130 W;
Described electrode plate comprises negative electrode and anode, and described negative electrode is connected with radio-frequency power supply, and the power setting of described radio-frequency power supply is 350 ~ 400 W.
As the improvement of such scheme, described reactive ion etching equipment comprises vacuum system, and it is 5 ~ 8 Pa that described vacuum system is controlled the pressure of reactive ion etching equipment.
Accordingly; the present invention also provides a kind of reactive ion etching equipment of crystal silicon solar batteries; comprise electrode plate, gas system and radio-frequency power supply; described electrode plate comprises negative electrode and anode; described negative electrode is connected with radio-frequency power supply; described gas system is for generation of reacting gas, etching gas and protective gas, and described reacting gas is O
2, described etching gas is SF
6, described protective gas is C
4f
8.
As the improvement of such scheme, described gas system is passing into etching gas SF
6set of time be 2 ~ 8 seconds, described etching gas SF
6flow set be 8 ~ 18cm
3/ min;
Pass into reacting gas O
2set of time be 2 ~ 8 seconds, described reacting gas O
2flow set be 2 ~ 13cm
3/ min;
Pass into protective gas C
4f
8set of time be 1 ~ 7 second, described protective gas C
4f
8flow set be 8 ~ 18 cm
3/ min.
As the improvement of such scheme, the power setting of described electrode plate is 80 ~ 130 W; The power setting of described radio-frequency power supply is 350 ~ 400 W.
As the improvement of such scheme, described reactive ion etching equipment comprises vacuum system, and it is 5 ~ 8 Pa that described vacuum system is controlled the pressure of reactive ion etching equipment.
Implement the present invention, there is following beneficial effect:
The invention provides a kind of reactive ion etching process of crystal silicon solar batteries, it is on the silicon chip surface of making herbs into wool, starts O
2reactive ion, collocation SF
6etching gas carries out etching, then C
4f
8protective gas generates polymer and forms the protection of a side ancient piece of jade, round, flat and with a hole in its centre; make the etch-rate of vertical direction of front matte much larger than the etch-rate of an offside ancient piece of jade, round, flat and with a hole in its centre; thereby the dark Kuan Bi≤20:1 that obtains good micro-structural, can effectively reduce photon reflection, utilize diffusion to increase effective penetration degree of depth.
Described etching technics has ion sputtering etching and plasma chemical etching concurrently, and resolution is high, has anisotropic, high selectivity simultaneously.Therefore, described etching technics is applied in the front matte of crystal silicon solar batteries, has significantly improved battery short circuit electric current, has increased cell power generation efficiency.
And, to compare with traditional chemical surface etching etching device, its equipment investment is few, and method is simple, and productivity ratio is high, is applicable to the volume production of large-scale industrialization.
Accompanying drawing explanation
Fig. 1 is the flow chart of reactive ion etching process of the present invention;
Fig. 2 is the schematic diagram of the silicon chip of reactive ion etching process of the present invention;
Fig. 3 is the schematic diagram of the micro-structural of the A of silicon chip shown in Fig. 2 portion;
Fig. 4 is the structural representation of reactive ion etching equipment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, the present invention is described in further detail.
Referring to Fig. 1, Fig. 1 provides a kind of reactive ion etching process of crystal silicon solar batteries, comprising:
S101, puts into reactive ion etching equipment by the silicon chip of making herbs into wool.
Described reactive ion etching equipment comprises gas system and electrode plate, and described gas system is for generation of reacting gas, etching gas and protective gas.Described reacting gas is O
2, described etching gas is SF
6, described protective gas is C
4f
8.
The power setting of described electrode plate is 80 ~ 130 W; Described electrode plate comprises negative electrode and anode, and described negative electrode is connected with radio-frequency power supply, and the power setting of described radio-frequency power supply is 350 ~ 400 W.
The power setting of electrode plate is 80 ~ 130 W, current potential major part in the time of can guaranteeing to discharge drops near negative electrode, a large amount of charged particles are subject to the electric field acceleration perpendicular to silicon chip surface, impinge perpendicularly on silicon chip surface, with larger momentum, carry out physical etchings, also there is strong chemical reaction with film surface in them simultaneously, produces chemical etching effect.
The power setting of described radio-frequency power supply is 350 ~ 400 W, is used for producing high concentration plasma, to accelerate etch-rate.
Described reactive ion etching equipment also comprises vacuum system, and it is 5 ~ 8 Pa that described vacuum system is controlled the pressure of reactive ion etching equipment, can avoid unnecessary ion to adhere to, and stablizes reaction gas field.
S102, is placed in electrode plate by silicon chip, passes into reacting gas and etching gas the front matte of silicon chip is carried out to etching processing.
Concrete, described electrode plate comprises negative electrode and anode, and silicon chip is placed on negative electrode, and the front matte of silicon chip is towards anode.
Described etching gas SF
6flow set be 8 ~ 18 cm
3/ min, described reacting gas O
2flow set be 2 ~ 13cm
3/ min; Pass into etching gas SF
6set of time be 2 ~ 8 seconds, pass into reacting gas O
2set of time be 2 ~ 8 seconds.
Preferably, described etching gas SF
6flow set be 10 ~ 15 cm
3/ min, described reacting gas O
2flow set be 5 ~ 10cm
3/ min; Pass into etching gas SF
6set of time be 3 ~ 6 seconds, pass into reacting gas O
2set of time be 3 ~ 6 seconds.
Adopt above-mentioned flow and the etching gas and the reacting gas that pass into set of time, can guarantee that etching homogeneity is good, reaction is selected than good, and anisotropic etching effect is good.
S103, passes into protective gas, and described protective gas reacts with the sidewall of silicon chip and forms protective layer, and described silicon chip is greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre in the etch rate of the vertical direction of front matte.
Described protective gas C
4f
8flow set be 8 ~ 18 cm
3/ min; Pass into protective gas C
4f
8set of time be 1 ~ 7 second.
Preferably, described protective gas C
4f
8flow set be 10 ~ 15cm
3/ min; Pass into protective gas C
4f
8set of time be 2 ~ 5 seconds.
Adopt above-mentioned flow and the protective gas that passes into set of time, can guarantee that etching homogeneity is good, reaction is selected than good, and anisotropic etching effect is good.
S104, the front matte of described silicon chip forms micro-structural.
The dark Kuan Bi≤20:1 of described micro-structural.
Referring to Fig. 2 and Fig. 3, reactive ion etching process of the present invention is on the front of silicon chip 1 matte 2, starts O
2reactive ion, collocation SF
6etching gas carries out etching, then C
4f
8protective gas generates polymer and forms the protection of a side ancient piece of jade, round, flat and with a hole in its centre.Its reaction mechanism is: 2 SF
6+ O
2=2SOF
2+ 4F
2, react with Si and cause etching effect to form SiF
xand SiOF
x, the region of the micro-structural shown in Fig. 2 and Fig. 3 for being etched, above-mentioned micro-structural is groove.And, C
4f
8protective gas stops the reaction of sidewall to occur fast; make the etch-rate of vertical direction of front matte much larger than the etch-rate of an offside ancient piece of jade, round, flat and with a hole in its centre; thereby obtain good micro-structural 3; the dark Kuan Bi≤20:1 of described micro-structural 3; can effectively reduce photon reflection, utilize diffusion to increase effective penetration degree of depth.
Described etching technics has ion sputtering etching and plasma chemical etching concurrently, and resolution is high, has anisotropic, high selectivity simultaneously.Therefore, described etching technics is applied in the front matte of crystal silicon solar batteries, has significantly improved battery short circuit electric current, has increased cell power generation efficiency.
Referring to Fig. 4; the invention provides a kind of reactive ion etching equipment of crystal silicon solar batteries; comprise electrode plate 1, gas system 2 and radio-frequency power supply 3; described electrode plate 1 comprises anode 11 and negative electrode 12; described negative electrode 12 is connected with radio-frequency power supply 3; described gas system 2 is for generation of reacting gas, etching gas and protective gas, and described reacting gas is O
2, described etching gas is SF
6, described protective gas is C
4f
8.
Wherein, the power setting of described electrode plate 1 is 80 ~ 130 W; The power setting of described radio-frequency power supply 3 is 350 ~ 400 W.
In described gas system 2, pass into etching gas SF
6set of time be 2 ~ 8 seconds, described etching gas SF
6flow set be 8 ~ 18cm
3/ min; Pass into reacting gas O
2set of time be 2 ~ 8 seconds, described reacting gas O
2flow set be 2 ~ 13cm
3/ min; Pass into protective gas C
4f
8set of time be 1 ~ 7 second, described protective gas C
4f
8flow set be 8 ~ 18 cm
3/ min.
Preferably, in described gas system 2, pass into etching gas SF
6set of time be 3 ~ 6 seconds, described etching gas SF
6flow set be 10 ~ 15cm
3/ min; Pass into reacting gas O
2set of time be 3 ~ 6 seconds, described reacting gas O
2flow set be 5 ~ 10cm
3/ min; Pass into protective gas C
4f
8set of time be 2 ~ 5 seconds, described protective gas C
4f
8flow set be 10 ~ 15 cm
3/ min.
Described reactive ion etching equipment comprises vacuum system 4, and it is 5 ~ 8 Pa that described vacuum system 4 is controlled the pressure of reactive ion etching equipment.
Between described negative electrode 12 and radio-frequency power supply 3, be also provided with matching system 5.Matching system 5 specifically can be selected radio frequency adaptation, but is not limited to this.Radio frequency adaptation can make load impedance mate with the impedance phase of radio-frequency power supply, thereby reduces reflection power, and the through-put power of radio-frequency power supply is maximized.
During use, silicon chip 6 is placed on negative electrode 12, the front matte of silicon chip, towards anode 11, starts gas system 2, passes into O
2reactive ion, collocation SF
6etching gas carries out etching, then C
4f
8protective gas generates polymer and forms the protection of a side ancient piece of jade, round, flat and with a hole in its centre; make the etch-rate of vertical direction of front matte much larger than the etch-rate of an offside ancient piece of jade, round, flat and with a hole in its centre; thereby obtain good micro-structural 3; the dark Kuan Bi≤20:1 of described micro-structural 3; can effectively reduce photon reflection, utilize diffusion to increase effective penetration degree of depth.
Described etching technics has ion sputtering etching and plasma chemical etching concurrently, and resolution is high, has anisotropic, high selectivity simultaneously.Therefore, described etching technics is applied in the front matte of crystal silicon solar batteries, has significantly improved battery short circuit electric current, has increased cell power generation efficiency.
Compare with traditional chemical surface etching etching device, reactive ion etching equipment small investment of the present invention, simple in structure, method is easy, and productivity ratio is high, is applicable to the volume production of large-scale industrialization.
With specific embodiment, further set forth the present invention below
Embodiment 1
1, the silicon chip of making herbs into wool is put into reactive ion etching equipment, wherein, reactive ion etching equipment as shown in Figure 4, comprises electrode plate, gas system, radio-frequency power supply and vacuum system, described electrode plate comprises anode and negative electrode, and the power setting of electrode plate is 80 W; Gas system is for generation of reacting gas O
2, etching gas SF
6with protective gas C
4f
8; Negative electrode is connected with radio-frequency power supply, and the power setting of radio-frequency power supply is 350 W, and it is 5 Pa that vacuum system is controlled the pressure of reactive ion etching equipment.
2, silicon chip is placed on negative electrode, the front matte of silicon chip is towards anode, and passing into flow is 2cm
3the O of/min
2reacting gas 2 seconds, to pass into flow be 8 cm
3/ min SF
6etching gas 2 seconds, O
2reacting gas and SF
6etching gas carries out etching processing to the front matte of silicon chip.
3, passing into flow is 8 cm
3the C of/min
4f
8protective gas 1 second, C
4f
8protective gas reacts with the sidewall of silicon chip and forms protective layer, makes silicon chip in the etch rate of the vertical direction of front matte, be greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre.
4, the front matte of described silicon chip forms the micro-structural that depth-to-width ratio is 20:1.
Result: compare with common crystal silicon solar batteries, the battery short circuit electric current I sc of crystal silicon solar batteries of the present invention has improved 3.05%, and cell power generation efficiency Eff has improved 0.63%.
Embodiment 2
1, the silicon chip of making herbs into wool is put into reactive ion etching equipment, wherein, reactive ion etching equipment as shown in Figure 4, comprises electrode plate, gas system, radio-frequency power supply and vacuum system, described electrode plate comprises anode and negative electrode, and the power setting of electrode plate is 100 W; Gas system is for generation of reacting gas O
2, etching gas SF
6with protective gas C
4f
8; Negative electrode is connected with radio-frequency power supply, and the power setting of radio-frequency power supply is 360 W, and vacuum system controls the pressure of reactive ion etching equipment for 6Pa.
2, silicon chip is placed on negative electrode, the front matte of silicon chip is towards anode, and passing into flow is 5cm
3the O of/min
2reacting gas 3 seconds, to pass into flow be 10cm
3/ min SF
6etching gas 3 seconds, O
2reacting gas and SF
6etching gas carries out etching processing to the front matte of silicon chip.
3, passing into flow is 10cm
3the C of/min
4f
8protective gas 2 seconds, C
4f
8protective gas reacts with the sidewall of silicon chip and forms protective layer, makes silicon chip in the etch rate of the vertical direction of front matte, be greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre.
4, the front matte of described silicon chip forms the micro-structural that depth-to-width ratio is 21:1.
Result: compare with common crystal silicon solar batteries, the battery short circuit electric current I sc of crystal silicon solar batteries of the present invention has improved 3.12%, and cell power generation efficiency Eff has improved 0.64%.
Embodiment 3
1, the silicon chip of making herbs into wool is put into reactive ion etching equipment, wherein, reactive ion etching equipment as shown in Figure 4, comprises electrode plate, gas system, radio-frequency power supply and vacuum system, described electrode plate comprises anode and negative electrode, and the power setting of electrode plate is 110W; Gas system is for generation of reacting gas O
2, etching gas SF
6with protective gas C
4f
8; Negative electrode is connected with radio-frequency power supply, and the power setting of radio-frequency power supply is 370 W, and vacuum system controls the pressure of reactive ion etching equipment for 7Pa.
2, silicon chip is placed on negative electrode, the front matte of silicon chip is towards anode, and passing into flow is 8cm
3the O of/min
2reacting gas 5 seconds, to pass into flow be 12 cm
3/ min SF
6etching gas 5 seconds, O
2reacting gas and SF
6etching gas carries out etching processing to the front matte of silicon chip.
3, passing into flow is 12 cm
3the C of/min
4f
8protective gas 4 seconds, C
4f
8protective gas reacts with the sidewall of silicon chip and forms protective layer, makes silicon chip in the etch rate of the vertical direction of front matte, be greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre.
4, the front matte of described silicon chip forms the micro-structural that depth-to-width ratio is 25:1.
Result: compare with common crystal silicon solar batteries, the battery short circuit electric current I sc of crystal silicon solar batteries of the present invention has improved 3.08%, and cell power generation efficiency Eff has improved 0.62%.
Embodiment 4
1, the silicon chip of making herbs into wool is put into reactive ion etching equipment, wherein, reactive ion etching equipment as shown in Figure 4, comprises electrode plate, gas system, radio-frequency power supply and vacuum system, described electrode plate comprises anode and negative electrode, and the power setting of electrode plate is 120 W; Gas system is for generation of reacting gas O
2, etching gas SF
6with protective gas C
4f
8; Negative electrode is connected with radio-frequency power supply, and the power setting of radio-frequency power supply is 380 W, and vacuum system controls the pressure of reactive ion etching equipment for 8Pa.
2, silicon chip is placed on negative electrode, the front matte of silicon chip is towards anode, and passing into flow is 10cm
3the O of/min
2reacting gas 6 seconds, to pass into flow be 15cm
3/ min SF
6etching gas 6 seconds, O
2reacting gas and SF
6etching gas carries out etching processing to the front matte of silicon chip.
3, passing into flow is 15 cm
3the C of/min
4f
8protective gas 5 seconds, C
4f
8protective gas reacts with the sidewall of silicon chip and forms protective layer, makes silicon chip in the etch rate of the vertical direction of front matte, be greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre.
4, the front matte of described silicon chip forms the micro-structural that depth-to-width ratio is 22:1.
Result: compare with common crystal silicon solar batteries, the battery short circuit electric current I sc of crystal silicon solar batteries of the present invention has improved 3.10%, and cell power generation efficiency Eff has improved 0.71%.
Embodiment 5
1, the silicon chip of making herbs into wool is put into reactive ion etching equipment, wherein, reactive ion etching equipment as shown in Figure 4, comprises electrode plate, gas system, radio-frequency power supply and vacuum system, described electrode plate comprises anode and negative electrode, and the power setting of electrode plate is 105 W; Gas system is for generation of reacting gas O
2, etching gas SF
6with protective gas C
4f
8; Negative electrode is connected with radio-frequency power supply, and the power setting of radio-frequency power supply is 375 W, and it is 6 Pa that vacuum system is controlled the pressure of reactive ion etching equipment.
2, silicon chip is placed on negative electrode, the front matte of silicon chip is towards anode, and passing into flow is 7cm
3the O of/min
2reacting gas 4 seconds, to pass into flow be 13cm
3/ min SF
6etching gas 4 seconds, O
2reacting gas and SF
6etching gas carries out etching processing to the front matte of silicon chip.
3, passing into flow is 13 cm
3the C of/min
4f
8protective gas 3 seconds, C
4f
8protective gas reacts with the sidewall of silicon chip and forms protective layer, makes silicon chip in the etch rate of the vertical direction of front matte, be greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre.
4, the front matte of described silicon chip forms the micro-structural that depth-to-width ratio is 23:1.
Result: compare with common crystal silicon solar batteries, the battery short circuit electric current I sc of crystal silicon solar batteries of the present invention has improved 3.09%, and cell power generation efficiency Eff has improved 0.64%.
Embodiment 6
1, the silicon chip of making herbs into wool is put into reactive ion etching equipment, wherein, reactive ion etching equipment as shown in Figure 4, comprises electrode plate, gas system, radio-frequency power supply and vacuum system, described electrode plate comprises anode and negative electrode, and the power setting of electrode plate is 130 W; Gas system is for generation of reacting gas O
2, etching gas SF
6with protective gas C
4f
8; Negative electrode is connected with radio-frequency power supply, and the power setting of radio-frequency power supply is 400 W, and it is 8 Pa that vacuum system is controlled the pressure of reactive ion etching equipment.
2, silicon chip is placed on negative electrode, the front matte of silicon chip is towards anode, and passing into flow is 13cm
3the O of/min
2reacting gas 8 seconds, to pass into flow be 18 cm
3/ min SF
6etching gas 8 seconds, O
2reacting gas and SF
6etching gas carries out etching processing to the front matte of silicon chip.
3, passing into flow is 18 cm
3the C of/min
4f
8protective gas 7 seconds, C
4f
8protective gas reacts with the sidewall of silicon chip and forms protective layer, makes silicon chip in the etch rate of the vertical direction of front matte, be greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre.
4, the front matte of described silicon chip forms the micro-structural that depth-to-width ratio is 20:1.
Result: compare with common crystal silicon solar batteries, the battery short circuit electric current I sc of crystal silicon solar batteries of the present invention has improved 3.08%, and cell power generation efficiency Eff has improved 0.65%.
In sum, the invention provides a kind of reactive ion etching process of crystal silicon solar batteries, it is on the silicon chip surface of making herbs into wool, starts O
2reactive ion, collocation SF
6etching gas carries out etching, then C
4f
8protective gas generates polymer and forms the protection of a side ancient piece of jade, round, flat and with a hole in its centre; make the etch-rate of vertical direction of front matte much larger than the etch-rate of an offside ancient piece of jade, round, flat and with a hole in its centre; thereby the dark Kuan Bi≤20:1 that obtains good micro-structural, can effectively reduce photon reflection, utilize diffusion to increase effective penetration degree of depth.
Described etching technics has ion sputtering etching and plasma chemical etching concurrently, and resolution is high, has anisotropic, high selectivity simultaneously.Therefore, described etching technics is applied in the front matte of crystal silicon solar batteries, has significantly improved battery short circuit electric current (Isc+3.05%), has increased cell power generation efficiency (Eff+0.63%).
And, to compare with traditional chemical surface etching etching device, its equipment investment is few, and method is simple, and productivity ratio is high, is applicable to the volume production of large-scale industrialization.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a reactive ion etching process for crystal silicon solar batteries, is characterized in that, comprising:
The silicon chip of making herbs into wool is put into reactive ion etching equipment, and described reactive ion etching equipment comprises gas system and electrode plate, and described gas system is for generation of reacting gas, etching gas and protective gas;
Silicon chip is placed in to electrode plate, passes into reacting gas and etching gas the front matte of silicon chip is carried out to etching processing;
Pass into protective gas, described protective gas reacts with the sidewall of silicon chip and forms protective layer, and described silicon chip is greater than the etch rate of a side ancient piece of jade, round, flat and with a hole in its centre in the etch rate of the vertical direction of front matte;
The front matte of described silicon chip forms micro-structural;
Wherein, described reacting gas is O
2, described etching gas is SF
6, described protective gas is C
4f
8.
2. the reactive ion etching process of crystal silicon solar batteries as claimed in claim 1, is characterized in that, described etching gas SF
6flow set be 8 ~ 18 cm
3/ min, described reacting gas O
2flow set be 2 ~ 13cm
3/ min, described protective gas C
4f
8flow set be 8 ~ 18 cm
3/ min.
3. the reactive ion etching process of crystal silicon solar batteries as claimed in claim 1, is characterized in that, passes into etching gas SF
6set of time be 2 ~ 8 seconds, pass into reacting gas O
2set of time be 2 ~ 8 seconds, pass into protective gas C
4f
8set of time be 1 ~ 7 second.
4. the reactive ion etching process of crystal silicon solar batteries as claimed in claim 1, is characterized in that, the dark Kuan Bi≤20:1 of described micro-structural.
5. the reactive ion etching process of crystal silicon solar batteries as claimed in claim 1, is characterized in that, the power setting of described electrode plate is 80 ~ 130 W;
Described electrode plate comprises negative electrode and anode, and described negative electrode is connected with radio-frequency power supply, and the power setting of described radio-frequency power supply is 350 ~ 400 W.
6. the reactive ion etching process of crystal silicon solar batteries as claimed in claim 1, is characterized in that, described reactive ion etching equipment comprises vacuum system, and it is 5 ~ 8 Pa that described vacuum system is controlled the pressure of reactive ion etching equipment.
7. the reactive ion etching equipment of a crystal silicon solar batteries; it is characterized in that; comprise electrode plate, gas system and radio-frequency power supply; described electrode plate comprises negative electrode and anode; described negative electrode is connected with radio-frequency power supply; described gas system is for generation of reacting gas, etching gas and protective gas, and described reacting gas is O
2, described etching gas is SF
6, described protective gas is C
4f
8.
8. the reactive ion etching equipment of crystal silicon solar batteries as claimed in claim 7, is characterized in that, described gas system is passing into etching gas SF
6set of time be 2 ~ 8 seconds, described etching gas SF
6flow set be 8 ~ 18cm
3/ min;
Pass into reacting gas O
2set of time be 2 ~ 8 seconds, described reacting gas O
2flow set be 2 ~ 13cm
3/ min;
Pass into protective gas C
4f
8set of time be 1 ~ 7 second, described protective gas C
4f
8flow set be 8 ~ 18 cm
3/ min.
9. the reactive ion etching equipment of crystal silicon solar batteries as claimed in claim 7, is characterized in that, the power setting of described electrode plate is 80 ~ 130 W; The power setting of described radio-frequency power supply is 350 ~ 400 W.
10. the reactive ion etching equipment of crystal silicon solar batteries as claimed in claim 7, is characterized in that, described reactive ion etching equipment comprises vacuum system, and it is 5 ~ 8 Pa that described vacuum system is controlled the pressure of reactive ion etching equipment.
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