CN105845773A - Three-dimensional PN junction processing technology for solar battery cell - Google Patents
Three-dimensional PN junction processing technology for solar battery cell Download PDFInfo
- Publication number
- CN105845773A CN105845773A CN201610189246.7A CN201610189246A CN105845773A CN 105845773 A CN105845773 A CN 105845773A CN 201610189246 A CN201610189246 A CN 201610189246A CN 105845773 A CN105845773 A CN 105845773A
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- Prior art keywords
- solar battery
- junction
- etching
- battery cell
- dimensional
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- 238000005516 engineering process Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000005060 rubber Substances 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 239000001117 sulphuric acid Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000002210 silicon-based material Substances 0.000 abstract description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 abstract 1
- 230000009466 transformation Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
Classifications
-
- H01L31/1804—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a three-dimensional PN junction processing technology for a solar battery cell. The surface of a blank silicon wafer is manufactured to be provided with rectangular grooves, trapezoidal grooves or other specially-shaped grooves scaled from dozens of micron to hundreds of microns through the dry etching process. According to the technical scheme of the invention, for a battery cell of a given size, such as a 156 type battery cell, the area of a PN junction on the battery cell is constant. In the depth direction of the silicon wafer, a deep groove of a certain depth and a certain width and scaled from dozens of micron to hundreds of microns is formed. In this way, the PN junction is converted from being planar into being serpentine. In the geometric dimensioning view, the area of the PN junction might be increased by tens of percentages or even doubled. That means, the silicon material is fully utilized to be applied to a photoelectric conversion interface.
Description
Technical field
The present invention relates to solaode processing technique field, particularly to a kind of solar battery sheet three-dimensional PN junction processing technique.
Background technology
Explore the photoelectric transformation efficiency improving solaode to greatest extent, reduce the new material of cost, new construction, significant to the application development of solaode, common silicon solar cell is planar structure, i.e. PN junction is plane, front is distributed gate line electrode, reverse side is furnished with back plate electrode, cell piece in given size, such as 156 cell pieces, PN junction area is constant, although there being relevant technology protruding at its surface configuration stereo microstructure, but the restriction due to technology, the structure height of its projection is limited, it can only be 1-2 micron, all there is bigger deficiency in absorption and conversion for sunlight.
Summary of the invention
In order to overcome drawbacks described above, the invention provides a kind of photoelectric transformation efficiency solar battery sheet three-dimensional PN junction processing technique that can improve solaode further.
The present invention is to solve that its technical problem be the technical scheme is that a kind of solar battery sheet three-dimensional PN junction processing technique, use dry etching method to produce the rectangular channel of some tens of pm to hundred microns, dovetail groove or other special-shaped slots on bare silicon wafer surface, comprise the following steps:
(1) utilize photoetching making etch mask on solar battery sheet surface, use the positive photoetching rubbers such as AZ, 2 ~ 20 microns of thickness of thickness, ultraviolet light wave band i, g or H line；
(2) Bosch etching technics is used; etching and side wall deposition protect alternate run; realize some tens of pm and above etching depth; inductively ICP power 1kW to 3kW; radio-frequency power 5 ~ 200W, print etching temperature scope 5 ~ 30 degrees Celsius, SF6 gas flow 1 ~ 100sccm; C4F8 gas flow scope 1 ~ 300sccm, etching and sedimentation unit Step Time 1 ~ 20 second；
(3) after dry etching terminates, the polymeric protective film of sidewall removes solar battery sheet surface residue by SPM solution, then the hydrofluoric acid solution or BOE solution with 10% removes the oxide layer remained.
As a further improvement on the present invention, the described concentrated sulphuric acid that SPM solution is 98% and the hydrogen peroxide mixing of 30%, mixed proportion 4:1 to 1:1, temperature 120 ~ 150 degrees Celsius.
The invention has the beneficial effects as follows: the present invention is at the cell piece of given size, such as 156 cell pieces, PN junction area is constant, the depth direction of silicon chip has certain depth and the deep trouth of width (tens of to more than 100 microns), so PN junction is converted to snakelike by plane form, and physical dimension angle is seen, the area of PN junction may improve tens of percentage points, the most double, this is equivalent to fully " drain " silicon materials and can be used for the interface of opto-electronic conversion.
Accompanying drawing explanation
Fig. 1 is present configuration schematic diagram；
Detailed description of the invention
In order to deepen the understanding of the present invention, below in conjunction with embodiment and accompanying drawing, the invention will be further described, and this embodiment is only used for explaining the present invention, is not intended that limiting the scope of the present invention.
Fig. 1 shows a kind of embodiment of the present invention a kind of solar battery sheet three-dimensional PN junction processing technique, uses dry etching method to produce some tens of pm on bare silicon wafer surface to the dovetail groove of hundred microns, comprises the following steps:
(1) utilize photoetching making etch mask on solar battery sheet surface, use the positive photoetching rubbers such as AZ, 2 ~ 20 microns of thickness of thickness, ultraviolet light wave band i, g or H line；
(2) Bosch etching technics is used; etching and side wall deposition protect alternate run; realize some tens of pm and above etching depth; inductively ICP power 1kW to 3kW; radio-frequency power 5 ~ 200W, print etching temperature scope 5 ~ 30 degrees Celsius, SF6 gas flow 1 ~ 100sccm; C4F8 gas flow scope 1 ~ 300sccm, etching and sedimentation unit Step Time 1 ~ 20 second；
(3) after dry etching terminates, the polymeric protective film of sidewall removes solar battery sheet surface residue by SPM solution, then the hydrofluoric acid solution or BOE solution with 10% removes the oxide layer remained., the described concentrated sulphuric acid that SPM solution is 98% and the hydrogen peroxide mixing of 30%, mixed proportion 4:1 to 1:1, temperature 120 ~ 150 degrees Celsius.
Compare existing stereo microstructure bulge-structure, the structure using deep trench enables to the degree of depth of deep trench can reach 50-100 micron, the absorption to solar energy can be improved further while increasing the area of PN junction, deep trench makes sunlight significantly be absorbed after multiple reflections in deep trench, improves overall photoelectric transformation efficiency.
Claims (2)
1. a solar battery sheet three-dimensional PN junction processing technique, it is characterised in that: use dry etching method to produce the rectangular channel of some tens of pm to hundred microns, dovetail groove or other special-shaped slots on bare silicon wafer surface, comprise the following steps:
(1) utilize photoetching making etch mask on solar battery sheet surface, use the positive photoetching rubbers such as AZ, 2 ~ 20 microns of thickness of thickness, ultraviolet light wave band i, g or H line；
(2) Bosch etching technics is used; etching and side wall deposition protect alternate run; realize some tens of pm and above etching depth; inductively ICP power 1kW to 3kW; radio-frequency power 5 ~ 200W, print etching temperature scope 5 ~ 30 degrees Celsius, SF6 gas flow 1 ~ 100sccm; C4F8 gas flow scope 1 ~ 300sccm, etching and sedimentation unit Step Time 1 ~ 20 second；
(3) after dry etching terminates, the polymeric protective film of sidewall removes solar battery sheet surface residue by SPM solution, then the hydrofluoric acid solution or BOE solution with 10% removes the oxide layer remained.
Solar battery sheet three-dimensional PN junction processing technique the most according to claim 1, it is characterised in that: the described concentrated sulphuric acid that SPM solution is 98% and the hydrogen peroxide mixing of 30%, mixed proportion 4:1 to 1:1, temperature 120 ~ 150 degrees Celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610189246.7A CN105845773B (en) | 2016-03-30 | 2016-03-30 | Solar battery sheet three-dimensional PN junction processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610189246.7A CN105845773B (en) | 2016-03-30 | 2016-03-30 | Solar battery sheet three-dimensional PN junction processing technology |
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| Publication Number | Publication Date |
|---|---|
| CN105845773A true CN105845773A (en) | 2016-08-10 |
| CN105845773B CN105845773B (en) | 2017-08-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610189246.7A Active CN105845773B (en) | 2016-03-30 | 2016-03-30 | Solar battery sheet three-dimensional PN junction processing technology |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166937A (en) * | 2018-09-04 | 2019-01-08 | 苏州钱正科技咨询有限公司 | A kind of silicon-based photovoltaic cells and its manufacturing method |
Citations (8)
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|---|---|---|---|---|
| CN101958244A (en) * | 2009-07-21 | 2011-01-26 | 中微半导体设备(上海)有限公司 | Deep reactive ion etching method and gas flow control device thereof |
| CN102709345A (en) * | 2012-05-19 | 2012-10-03 | 渤海大学 | Superfine crystal silicon battery structure |
| CN102923642A (en) * | 2012-11-07 | 2013-02-13 | 中国科学院上海微系统与信息技术研究所 | Side wall flatting method of high aspect ratio silicon structure |
| CN103077920A (en) * | 2011-10-25 | 2013-05-01 | 上海华虹Nec电子有限公司 | Dry etching method of improving horizontal opening of through silicon hole |
| CN103094068A (en) * | 2011-10-31 | 2013-05-08 | 中国科学院微电子研究所 | High-density embedded capacitor and manufacturing method thereof |
| CN103400800A (en) * | 2013-08-14 | 2013-11-20 | 中微半导体设备(上海)有限公司 | Bosch etching method |
| US20140150857A1 (en) * | 2012-12-04 | 2014-06-05 | Zena Technologies, Inc. | Multi-junction multi-tab photovoltaic devices |
| CN104124307A (en) * | 2014-07-22 | 2014-10-29 | 广东爱康太阳能科技有限公司 | Reactive ion etching process and device of crystalline silicon solar cell |
-
2016
- 2016-03-30 CN CN201610189246.7A patent/CN105845773B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958244A (en) * | 2009-07-21 | 2011-01-26 | 中微半导体设备(上海)有限公司 | Deep reactive ion etching method and gas flow control device thereof |
| CN103077920A (en) * | 2011-10-25 | 2013-05-01 | 上海华虹Nec电子有限公司 | Dry etching method of improving horizontal opening of through silicon hole |
| CN103094068A (en) * | 2011-10-31 | 2013-05-08 | 中国科学院微电子研究所 | High-density embedded capacitor and manufacturing method thereof |
| CN102709345A (en) * | 2012-05-19 | 2012-10-03 | 渤海大学 | Superfine crystal silicon battery structure |
| CN102923642A (en) * | 2012-11-07 | 2013-02-13 | 中国科学院上海微系统与信息技术研究所 | Side wall flatting method of high aspect ratio silicon structure |
| US20140150857A1 (en) * | 2012-12-04 | 2014-06-05 | Zena Technologies, Inc. | Multi-junction multi-tab photovoltaic devices |
| CN103400800A (en) * | 2013-08-14 | 2013-11-20 | 中微半导体设备(上海)有限公司 | Bosch etching method |
| CN104124307A (en) * | 2014-07-22 | 2014-10-29 | 广东爱康太阳能科技有限公司 | Reactive ion etching process and device of crystalline silicon solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166937A (en) * | 2018-09-04 | 2019-01-08 | 苏州钱正科技咨询有限公司 | A kind of silicon-based photovoltaic cells and its manufacturing method |
| CN109166937B (en) * | 2018-09-04 | 2020-06-05 | 江苏晶道新能源科技有限公司 | Silicon-based photovoltaic cell and manufacturing method thereof |
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| CN105845773B (en) | 2017-08-25 |
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