CN105845773B - Solar battery sheet three-dimensional PN junction processing technology - Google Patents
Solar battery sheet three-dimensional PN junction processing technology Download PDFInfo
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- CN105845773B CN105845773B CN201610189246.7A CN201610189246A CN105845773B CN 105845773 B CN105845773 B CN 105845773B CN 201610189246 A CN201610189246 A CN 201610189246A CN 105845773 B CN105845773 B CN 105845773B
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- microns
- solar battery
- battery sheet
- junction
- etching
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- 238000005516 engineering process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000001312 dry etching Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 229910018503 SF6 Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000004341 Octafluorocyclobutane Substances 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 3
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 3
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 3
- 239000005060 rubber Substances 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 239000002210 silicon-based material Substances 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of three-dimensional PN junction processing technology of solar battery sheet, some tens of pm is produced to hundred microns of rectangular channel, dovetail groove or other special-shaped slots on bare silicon wafer surface using dry etching method, cell piece of the present invention in given size, such as 156 cell pieces, PN junction area is constant, and certain depth and width are provided with the depth direction of silicon chip（It is tens of to more than 100 microns）Deep trouth, such PN junction is converted to snakelike by plane form, and physical dimension angle is seen, the area of PN junction may improve tens of percentage points, or even double, and this can be used for the interface of opto-electronic conversion equivalent to abundant " draining " silicon materials.
Description
Technical field
The present invention relates to solar cell processing technique field, more particularly to a kind of three-dimensional PN junction processing of solar battery sheet
Technique.
Background technology
The photoelectric transformation efficiency for improving solar cell to greatest extent is explored, the new material of cost, new construction, to too is reduced
The application development of positive energy battery is significant, and common silicon solar cell is planar structure, i.e., PN junction is plane, just
EDS maps have gate line electrode, and reverse side is furnished with back plate electrode, and in the cell piece of given size, such as 156 cell pieces, PN junction area is
Constant, although the technology for having correlation sets stereo microstructure raised on its surface, but due to the limitation of technology, its raised knot
Structure limited height, can only be 1-2 microns, and the absorption and conversion for sunshine all have larger deficiency.
The content of the invention
In order to overcome drawbacks described above, the invention provides a kind of opto-electronic conversion effect that can further improve solar cell
Rate solar battery sheet three-dimensional PN junction processing technology.
The technical scheme that is used to solve its technical problem of the present invention is：A kind of three-dimensional PN junction of solar battery sheet adds
Work technique, 50 microns to 100 microns of rectangular channel or dovetail groove is produced using dry etching method on bare silicon wafer surface,
Comprise the following steps：
（1）Photoetching making etch mask is utilized on solar battery sheet surface, using AZ positive photoetching rubbers, 2 ~ 20 microns of thickness
Thickness, ultraviolet light wave band i, g or H line；
（2）Using Bosch etching technics, etching and side wall deposition polymeric protective film alternate run realize 50 microns extremely
100 microns of etching depth, inductively ICP power 1kW to 3kW, 5 ~ 200W of radio-frequency power, print etching temperature scope 5 ~ 30
Degree Celsius, sulfur hexafluoride gas SF61 ~ 100sccm of flow, octafluorocyclobutane gas C4F81 ~ 300sccm of range of flow, etching and
Sedimentation unit Step Time 1 ~ 20 second；
（3）After dry etching terminates, the polymeric protective film of side wall is residual by SPM solution removal solar battery sheet surface
Stay thing, then hydrofluoric acid solution or the oxide layer of BOE solution removal residual with 10%.
As a further improvement on the present invention, the concentrated sulfuric acid and 30% hydrogen peroxide mixing of the described SPM solution for 98%, are mixed
Composition and division in a proportion example 4:1 to 1:1,120 ~ 150 degrees Celsius of temperature.
The beneficial effects of the invention are as follows：The present invention is in the cell piece of given size, such as 156 cell pieces, and PN junction area is
Constant, it is provided with certain depth and width on the depth direction of silicon chip（50 microns to 100 microns）Deep trouth, such PN junction by
Plane form is converted to snakelike, and physical dimension angle is seen, the area of PN junction may improve tens of percentage points, or even double, this phase
When the interface that can be used for opto-electronic conversion in abundant " draining " silicon materials.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention；
Embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment and accompanying drawing, the invention will be further described, should
Embodiment is only used for explaining the present invention, is not intended to limit the scope of the present invention..
Fig. 1 shows a kind of a kind of embodiment of the three-dimensional PN junction processing technology of solar battery sheet of the invention, using dry
Method lithographic method produces 50 microns to 100 microns of dovetail groove on bare silicon wafer surface, comprises the following steps：
（1）Photoetching making etch mask is utilized on solar battery sheet surface, using AZ positive photoetching rubbers, 2 ~ 20 microns of thickness
Thickness, ultraviolet light wave band i, g or H line；
（2）Using Bosch etching technics, etching and side wall deposition protect alternate run, realize 50 microns to 100 microns of number
Etching depth, inductively ICP power 1kW to 3kW, 5 ~ 200W of radio-frequency power, 5 ~ 30 degrees Celsius of print etching temperature scope,
Sulfur hexafluoride gas SF61 ~ 100sccm of flow, octafluorocyclobutane gas C4F81 ~ 300sccm of range of flow, etching and deposition are single
First Step Time 1 ~ 20 second；
（3）After dry etching terminates, the polymeric protective film of side wall is residual by SPM solution removal solar battery sheet surface
Stay thing, then hydrofluoric acid solution or the oxide layer of BOE solution removal residual with 10%., the dense sulphur that described SPM solution is 98%
Acid and 30% hydrogen peroxide are mixed, mixed proportion 4:1 to 1:1,120 ~ 150 degrees Celsius of temperature.
Compared to existing stereo microstructure bulge-structure, the depth for enabling to deep trench using the structure of deep trench can reach
To 50-100 microns, the absorption to solar energy can be further improved while the area of PN junction is increased, deep trench causes too
Sunlight is significantly absorbed in deep trench after multiple reflections, improves overall photoelectric transformation efficiency.
Claims (2)
1. a kind of three-dimensional PN junction processing technology of solar battery sheet, it is characterised in that：Using dry etching method in bare silicon wafer
50 microns to 100 microns of rectangular channel or dovetail groove is produced on surface, is comprised the following steps：
（1）Photoetching making etch mask is utilized on solar battery sheet surface, using AZ positive photoetching rubbers, 2 ~ 20 microns of thickness of thickness,
Ultraviolet light wave band i, g or H line；
（2）Using Bosch etching technics, etching and side wall deposition polymeric protective film alternate run, realize 50 microns to 100 it is micro-
The etching depth of rice, inductively ICP power 1kW to 3kW, 5 ~ 200W of radio-frequency power, print etching temperature scope 5 ~ 30 is Celsius
Degree, sulfur hexafluoride gas SF61 ~ 100sccm of flow, octafluorocyclobutane gas C4F81 ~ 300sccm of range of flow, etching and deposition
1 ~ 20 second unit step time；
（3）After dry etching terminates, the polymeric protective film of side wall removes solar battery sheet remained on surface by SPM solution
Thing, then hydrofluoric acid solution or the oxide layer of BOE solution removal residual with 10%.
2. the three-dimensional PN junction processing technology of solar battery sheet according to claim 1, it is characterised in that：Described SPM is molten
The concentrated sulfuric acid and 30% hydrogen peroxide mixing of the liquid for 98%, mixed proportion 4:1 to 1:1,120 ~ 150 degrees Celsius of temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610189246.7A CN105845773B (en) | 2016-03-30 | 2016-03-30 | Solar battery sheet three-dimensional PN junction processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610189246.7A CN105845773B (en) | 2016-03-30 | 2016-03-30 | Solar battery sheet three-dimensional PN junction processing technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105845773A CN105845773A (en) | 2016-08-10 |
| CN105845773B true CN105845773B (en) | 2017-08-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610189246.7A Active CN105845773B (en) | 2016-03-30 | 2016-03-30 | Solar battery sheet three-dimensional PN junction processing technology |
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| Country | Link |
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| CN (1) | CN105845773B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166937B (en) * | 2018-09-04 | 2020-06-05 | 江苏晶道新能源科技有限公司 | Silicon-based photovoltaic cell and manufacturing method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140150857A1 (en) * | 2012-12-04 | 2014-06-05 | Zena Technologies, Inc. | Multi-junction multi-tab photovoltaic devices |
| CN101958244A (en) * | 2009-07-21 | 2011-01-26 | 中微半导体设备(上海)有限公司 | Deep reactive ion etching method and gas flow control device thereof |
| CN103077920A (en) * | 2011-10-25 | 2013-05-01 | 上海华虹Nec电子有限公司 | Dry etching method of improving horizontal opening of through silicon hole |
| CN103094068B (en) * | 2011-10-31 | 2015-11-18 | 成都锐华光电技术有限责任公司 | High density embedded capacitor and preparation method thereof |
| CN102709345B (en) * | 2012-05-19 | 2014-07-02 | 渤海大学 | Superfine crystal silicon battery structure |
| CN102923642B (en) * | 2012-11-07 | 2015-11-04 | 中国科学院上海微系统与信息技术研究所 | A kind of smooth-sided method of high-aspect-ratio silicon structure |
| CN103400800B (en) * | 2013-08-14 | 2015-09-30 | 中微半导体设备(上海)有限公司 | Bosch lithographic method |
| CN104124307A (en) * | 2014-07-22 | 2014-10-29 | 广东爱康太阳能科技有限公司 | Reactive ion etching process and device of crystalline silicon solar cell |
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| CN105845773A (en) | 2016-08-10 |
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