JP6523732B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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Publication number
JP6523732B2
JP6523732B2 JP2015063603A JP2015063603A JP6523732B2 JP 6523732 B2 JP6523732 B2 JP 6523732B2 JP 2015063603 A JP2015063603 A JP 2015063603A JP 2015063603 A JP2015063603 A JP 2015063603A JP 6523732 B2 JP6523732 B2 JP 6523732B2
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Japan
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film
processing
data
wafer
pattern
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JP2015063603A
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Japanese (ja)
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JP2016184638A (ja
JP2016184638A5 (enExample
Inventor
臼井　建人
建人 臼井
侯然 廣田
侯然 廣田
智己 井上
智己 井上
茂 中元
中元　　茂
功祐 福地
功祐 福地
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2015063603A priority Critical patent/JP6523732B2/ja
Priority to KR1020150121739A priority patent/KR101901328B1/ko
Priority to CN201911074499.XA priority patent/CN110767581A/zh
Priority to CN201510559637.9A priority patent/CN106024616B/zh
Priority to TW104130145A priority patent/TWI593020B/zh
Priority to US14/852,189 priority patent/US9741629B2/en
Publication of JP2016184638A publication Critical patent/JP2016184638A/ja
Priority to US15/673,151 priority patent/US20170358504A1/en
Publication of JP2016184638A5 publication Critical patent/JP2016184638A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2015063603A 2015-03-26 2015-03-26 プラズマ処理装置およびプラズマ処理方法 Active JP6523732B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015063603A JP6523732B2 (ja) 2015-03-26 2015-03-26 プラズマ処理装置およびプラズマ処理方法
KR1020150121739A KR101901328B1 (ko) 2015-03-26 2015-08-28 플라즈마 처리 장치 및 플라즈마 처리 방법
CN201510559637.9A CN106024616B (zh) 2015-03-26 2015-09-06 等离子处理装置以及等离子处理方法
CN201911074499.XA CN110767581A (zh) 2015-03-26 2015-09-06 等离子处理装置以及等离子处理方法
TW104130145A TWI593020B (zh) 2015-03-26 2015-09-11 Plasma processing apparatus and plasma processing method
US14/852,189 US9741629B2 (en) 2015-03-26 2015-09-11 Plasma processing apparatus and plasma processing method
US15/673,151 US20170358504A1 (en) 2015-03-26 2017-08-09 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015063603A JP6523732B2 (ja) 2015-03-26 2015-03-26 プラズマ処理装置およびプラズマ処理方法

Related Child Applications (1)

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JP2019083582A Division JP6762401B2 (ja) 2019-04-25 2019-04-25 プラズマ処理装置およびプラズマ処理方法

Publications (3)

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JP2016184638A JP2016184638A (ja) 2016-10-20
JP2016184638A5 JP2016184638A5 (enExample) 2018-02-15
JP6523732B2 true JP6523732B2 (ja) 2019-06-05

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US (2) US9741629B2 (enExample)
JP (1) JP6523732B2 (enExample)
KR (1) KR101901328B1 (enExample)
CN (2) CN106024616B (enExample)
TW (1) TWI593020B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109417019B (zh) * 2016-07-04 2023-12-05 三菱电机株式会社 半导体装置的制造方法
WO2020031224A1 (ja) 2018-08-06 2020-02-13 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマアッシング装置
JP7422557B2 (ja) * 2019-02-28 2024-01-26 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102728517B1 (ko) * 2019-04-08 2024-11-13 삼성전자주식회사 플라즈마 모니터링 장치 및 이를 포함하는 플라즈마 처리 장치
KR102510305B1 (ko) * 2020-03-11 2023-03-17 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
KR102515864B1 (ko) * 2020-09-17 2023-03-31 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US11437289B2 (en) * 2020-09-30 2022-09-06 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US12051575B2 (en) 2020-09-30 2024-07-30 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
KR20230131167A (ko) * 2022-03-04 2023-09-12 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
CN118866675A (zh) * 2024-09-25 2024-10-29 苏州矩阵光电有限公司 干法刻蚀工艺的优化方法

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US4675072A (en) * 1986-06-25 1987-06-23 International Business Machines Corporation Trench etch endpoint detection by LIF
JP4567828B2 (ja) 1999-09-14 2010-10-20 東京エレクトロン株式会社 終点検出方法
US6824813B1 (en) * 2000-04-06 2004-11-30 Applied Materials Inc Substrate monitoring method and apparatus
JP3854810B2 (ja) 2000-06-20 2006-12-06 株式会社日立製作所 発光分光法による被処理材の膜厚測定方法及び装置とそれを用いた被処理材の処理方法及び装置
TW517306B (en) * 2001-09-05 2003-01-11 Hitachi Ltd Method and device to determine the end point of semiconductor device processing and the processing method and device of the processed material using the method
JP3694662B2 (ja) * 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP3890254B2 (ja) * 2002-05-07 2007-03-07 沖電気工業株式会社 半導体装置の製造方法
US6972848B2 (en) * 2003-03-04 2005-12-06 Hitach High-Technologies Corporation Semiconductor fabricating apparatus with function of determining etching processing state
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JP4640828B2 (ja) * 2006-03-17 2011-03-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2008218898A (ja) 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
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JP6132688B2 (ja) * 2013-07-18 2017-05-24 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JP2016184638A (ja) 2016-10-20
KR20160115652A (ko) 2016-10-06
TWI593020B (zh) 2017-07-21
US20170358504A1 (en) 2017-12-14
TW201635377A (zh) 2016-10-01
CN110767581A (zh) 2020-02-07
CN106024616B (zh) 2019-11-26
US20160284610A1 (en) 2016-09-29
US9741629B2 (en) 2017-08-22
KR101901328B1 (ko) 2018-09-21
CN106024616A (zh) 2016-10-12

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