TWI593020B - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method Download PDF

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Publication number
TWI593020B
TWI593020B TW104130145A TW104130145A TWI593020B TW I593020 B TWI593020 B TW I593020B TW 104130145 A TW104130145 A TW 104130145A TW 104130145 A TW104130145 A TW 104130145A TW I593020 B TWI593020 B TW I593020B
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TW
Taiwan
Prior art keywords
film
processing
data
wafer
pattern
Prior art date
Application number
TW104130145A
Other languages
English (en)
Chinese (zh)
Other versions
TW201635377A (zh
Inventor
臼井建人
廣田侯然
井上智己
中元茂
福地功祐
Original Assignee
日立全球先端科技股份有限公司
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Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201635377A publication Critical patent/TW201635377A/zh
Application granted granted Critical
Publication of TWI593020B publication Critical patent/TWI593020B/zh

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Classifications

    • H10P74/23—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H10P50/242—
    • H10P50/691—
    • H10P74/20—
    • H10P74/203—
    • H10P74/238—
    • H10P74/27—
    • H10P72/0604—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW104130145A 2015-03-26 2015-09-11 Plasma processing apparatus and plasma processing method TWI593020B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015063603A JP6523732B2 (ja) 2015-03-26 2015-03-26 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201635377A TW201635377A (zh) 2016-10-01
TWI593020B true TWI593020B (zh) 2017-07-21

Family

ID=56975656

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104130145A TWI593020B (zh) 2015-03-26 2015-09-11 Plasma processing apparatus and plasma processing method

Country Status (5)

Country Link
US (2) US9741629B2 (enExample)
JP (1) JP6523732B2 (enExample)
KR (1) KR101901328B1 (enExample)
CN (2) CN106024616B (enExample)
TW (1) TWI593020B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018008068A1 (ja) * 2016-07-04 2018-01-11 三菱電機株式会社 半導体装置の製造方法
WO2020031224A1 (ja) 2018-08-06 2020-02-13 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマアッシング装置
JP7422557B2 (ja) * 2019-02-28 2024-01-26 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102728517B1 (ko) * 2019-04-08 2024-11-13 삼성전자주식회사 플라즈마 모니터링 장치 및 이를 포함하는 플라즈마 처리 장치
JP7012900B1 (ja) * 2020-03-11 2022-01-28 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
KR102629845B1 (ko) 2020-06-16 2024-01-29 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
US12381071B2 (en) * 2020-09-17 2025-08-05 Hitachi High-Tech Corporation Plasma processing method and plasma processing apparatus
US12051575B2 (en) 2020-09-30 2024-07-30 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
US11437289B2 (en) * 2020-09-30 2022-09-06 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
KR20230131167A (ko) * 2022-03-04 2023-09-12 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
CN118866675A (zh) * 2024-09-25 2024-10-29 苏州矩阵光电有限公司 干法刻蚀工艺的优化方法

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US4675072A (en) * 1986-06-25 1987-06-23 International Business Machines Corporation Trench etch endpoint detection by LIF
JP4567828B2 (ja) 1999-09-14 2010-10-20 東京エレクトロン株式会社 終点検出方法
US6824813B1 (en) * 2000-04-06 2004-11-30 Applied Materials Inc Substrate monitoring method and apparatus
JP3854810B2 (ja) 2000-06-20 2006-12-06 株式会社日立製作所 発光分光法による被処理材の膜厚測定方法及び装置とそれを用いた被処理材の処理方法及び装置
TW517306B (en) * 2001-09-05 2003-01-11 Hitachi Ltd Method and device to determine the end point of semiconductor device processing and the processing method and device of the processed material using the method
JP3694662B2 (ja) * 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP3890254B2 (ja) * 2002-05-07 2007-03-07 沖電気工業株式会社 半導体装置の製造方法
US6972848B2 (en) * 2003-03-04 2005-12-06 Hitach High-Technologies Corporation Semiconductor fabricating apparatus with function of determining etching processing state
US7625824B2 (en) 2005-06-16 2009-12-01 Oerlikon Usa, Inc. Process change detection through the use of evolutionary algorithms
JP4640828B2 (ja) * 2006-03-17 2011-03-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2008218898A (ja) 2007-03-07 2008-09-18 Hitachi High-Technologies Corp プラズマ処理装置
JP4969545B2 (ja) * 2008-09-22 2012-07-04 株式会社日立ハイテクノロジーズ 半導体製造装置
JP5199981B2 (ja) 2009-11-04 2013-05-15 東京エレクトロン株式会社 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP6186152B2 (ja) * 2013-03-29 2017-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6239294B2 (ja) * 2013-07-18 2017-11-29 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理装置の運転方法
JP6132688B2 (ja) * 2013-07-18 2017-05-24 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JP2016184638A (ja) 2016-10-20
TW201635377A (zh) 2016-10-01
CN106024616A (zh) 2016-10-12
KR101901328B1 (ko) 2018-09-21
US20160284610A1 (en) 2016-09-29
US9741629B2 (en) 2017-08-22
CN110767581A (zh) 2020-02-07
CN106024616B (zh) 2019-11-26
KR20160115652A (ko) 2016-10-06
JP6523732B2 (ja) 2019-06-05
US20170358504A1 (en) 2017-12-14

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