KR101891828B1 - 산화물 반도체 박막, 박막 트랜지스터 및 박막 트랜지스터를 구비한 장치 - Google Patents

산화물 반도체 박막, 박막 트랜지스터 및 박막 트랜지스터를 구비한 장치 Download PDF

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KR101891828B1
KR101891828B1 KR1020110084793A KR20110084793A KR101891828B1 KR 101891828 B1 KR101891828 B1 KR 101891828B1 KR 1020110084793 A KR1020110084793 A KR 1020110084793A KR 20110084793 A KR20110084793 A KR 20110084793A KR 101891828 B1 KR101891828 B1 KR 101891828B1
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South Korea
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thin film
film
oxide semiconductor
film transistor
substrate
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KR1020110084793A
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Korean (ko)
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KR20120023561A (ko
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마사히로 다카타
후미히코 모치즈키
다케시 하마
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후지필름 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020110084793A 2010-08-25 2011-08-24 산화물 반도체 박막, 박막 트랜지스터 및 박막 트랜지스터를 구비한 장치 KR101891828B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010187880A JP2012049208A (ja) 2010-08-25 2010-08-25 酸化物半導体薄膜、薄膜トランジスタおよび薄膜トランジスタを備えた装置
JPJP-P-2010-187880 2010-08-25

Publications (2)

Publication Number Publication Date
KR20120023561A KR20120023561A (ko) 2012-03-13
KR101891828B1 true KR101891828B1 (ko) 2018-08-24

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Application Number Title Priority Date Filing Date
KR1020110084793A KR101891828B1 (ko) 2010-08-25 2011-08-24 산화물 반도체 박막, 박막 트랜지스터 및 박막 트랜지스터를 구비한 장치

Country Status (3)

Country Link
JP (1) JP2012049208A (ja)
KR (1) KR101891828B1 (ja)
TW (1) TW201219342A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5960626B2 (ja) * 2013-03-08 2016-08-02 富士フイルム株式会社 薄膜トランジスタを備えた半導体装置の製造方法
US9360564B2 (en) * 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI566413B (zh) * 2013-09-09 2017-01-11 元太科技工業股份有限公司 薄膜電晶體
KR102334986B1 (ko) * 2014-12-09 2021-12-06 엘지디스플레이 주식회사 산화물 반도체층의 결정화 방법, 이를 적용한 반도체 장치 및 이의 제조 방법
KR102329159B1 (ko) * 2016-10-31 2021-11-23 엘지디스플레이 주식회사 이중층 산화물 반도체 물질을 구비한 박막 트랜지스터 기판
KR102333694B1 (ko) 2020-04-28 2021-11-30 연세대학교 산학협력단 생체 구조 모방형 다공성 산화물 반도체 기반의 고감도 전기-화학 센서 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067849A (ja) 2008-09-11 2010-03-25 Fujifilm Corp 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP2010067954A (ja) 2008-08-14 2010-03-25 Fujifilm Corp 薄膜電界効果型トランジスタ
JP2010080936A (ja) * 2008-08-28 2010-04-08 Canon Inc アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ
WO2010092810A1 (ja) * 2009-02-13 2010-08-19 株式会社アルバック トランジスタの製造方法、トランジスタ及びスパッタリングターゲット

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067954A (ja) 2008-08-14 2010-03-25 Fujifilm Corp 薄膜電界効果型トランジスタ
JP2010080936A (ja) * 2008-08-28 2010-04-08 Canon Inc アモルファス酸化物半導体及び該アモルファス酸化物半導体を用いた薄膜トランジスタ
JP2010067849A (ja) 2008-09-11 2010-03-25 Fujifilm Corp 薄膜電界効果型トランジスタおよびそれを用いた表示装置
WO2010092810A1 (ja) * 2009-02-13 2010-08-19 株式会社アルバック トランジスタの製造方法、トランジスタ及びスパッタリングターゲット

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TW201219342A (en) 2012-05-16
KR20120023561A (ko) 2012-03-13
JP2012049208A (ja) 2012-03-08

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