KR101890457B1 - 광전자 모듈 및 그것을 제조하기 위한 방법 - Google Patents

광전자 모듈 및 그것을 제조하기 위한 방법 Download PDF

Info

Publication number
KR101890457B1
KR101890457B1 KR1020147006294A KR20147006294A KR101890457B1 KR 101890457 B1 KR101890457 B1 KR 101890457B1 KR 1020147006294 A KR1020147006294 A KR 1020147006294A KR 20147006294 A KR20147006294 A KR 20147006294A KR 101890457 B1 KR101890457 B1 KR 101890457B1
Authority
KR
South Korea
Prior art keywords
wafer
optical
substrate
optical component
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147006294A
Other languages
English (en)
Korean (ko)
Other versions
KR20140057596A (ko
Inventor
하르트무트 루드만
미헬 바지
Original Assignee
헵타곤 마이크로 옵틱스 피티이. 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 헵타곤 마이크로 옵틱스 피티이. 리미티드 filed Critical 헵타곤 마이크로 옵틱스 피티이. 리미티드
Publication of KR20140057596A publication Critical patent/KR20140057596A/ko
Application granted granted Critical
Publication of KR101890457B1 publication Critical patent/KR101890457B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Device Packages (AREA)
  • Photovoltaic Devices (AREA)
KR1020147006294A 2011-08-10 2012-08-02 광전자 모듈 및 그것을 제조하기 위한 방법 Active KR101890457B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161521818P 2011-08-10 2011-08-10
US61/521,818 2011-08-10
PCT/CH2012/000178 WO2013020238A1 (en) 2011-08-10 2012-08-02 Opto-electronic module and method for manufacturing the same

Publications (2)

Publication Number Publication Date
KR20140057596A KR20140057596A (ko) 2014-05-13
KR101890457B1 true KR101890457B1 (ko) 2018-08-21

Family

ID=46762761

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147006294A Active KR101890457B1 (ko) 2011-08-10 2012-08-02 광전자 모듈 및 그것을 제조하기 위한 방법

Country Status (8)

Country Link
US (2) US9224772B2 (https=)
EP (1) EP2742529B1 (https=)
JP (1) JP6247633B2 (https=)
KR (1) KR101890457B1 (https=)
CN (1) CN103858230B (https=)
SG (2) SG2014005805A (https=)
TW (2) TWI552275B (https=)
WO (1) WO2013020238A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9525093B2 (en) * 2009-06-30 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Infrared attenuating or blocking layer in optical proximity sensor
DE102011113483B4 (de) * 2011-09-13 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement
US9232122B2 (en) * 2012-09-19 2016-01-05 Lg Innotek Co., Ltd. Camera module having an array sensor
US20140160751A1 (en) * 2012-12-11 2014-06-12 Vixar Inc. Low cost optical package
US9543354B2 (en) 2013-07-30 2017-01-10 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules that have shielding to reduce light leakage or stray light, and fabrication methods for such modules
US10403671B2 (en) 2013-12-10 2019-09-03 Ams Sensors Singapore Pte. Ltd. Wafer-level optical modules and methods for manufacturing the same
KR101785879B1 (ko) * 2014-07-23 2017-10-16 헵타곤 마이크로 옵틱스 피티이. 리미티드 수직 정렬 피처들을 포함하는 광 방출기 및 광 검출기 모듈들
US9711552B2 (en) * 2014-08-19 2017-07-18 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules having a silicon substrate, and fabrication methods for such modules
CN204760384U (zh) * 2015-05-18 2015-11-11 华天科技（昆山）电子有限公司 高像素影像传感芯片的晶圆级封装结构
KR101778848B1 (ko) * 2015-08-21 2017-09-14 엘지전자 주식회사 발광소자 패키지 어셈블리 및 이의 제조 방법
DE102015114563A1 (de) * 2015-09-01 2017-03-02 Osram Opto Semiconductors Gmbh Mikrolinse für LED-Modul
US10304813B2 (en) * 2015-11-05 2019-05-28 Innolux Corporation Display device having a plurality of bank structures
WO2017146645A1 (en) * 2016-02-22 2017-08-31 Heptagon Micro Optics Pte. Ltd. Thin optoelectronic modules with apertures and their manufacture
KR102572819B1 (ko) * 2016-02-23 2023-08-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광모듈 제조방법 및 표시장치
SG11201602031TA (en) * 2016-03-08 2017-10-30 Tnc Optics & Tech Pte Ltd A fabrication method of optical sensor cover having a lens
TWI777947B (zh) * 2016-03-23 2022-09-21 新加坡商海特根微光學公司 光電模組總成及製造方法
US20180017741A1 (en) * 2016-07-15 2018-01-18 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
TWI618156B (zh) * 2016-08-05 2018-03-11 Siliconware Precision Industries Co., Ltd. 電子封裝件及其製法
US11510351B2 (en) 2019-01-04 2022-11-22 Engent, Inc. Systems and methods for precision placement of components
US11272631B2 (en) 2019-09-09 2022-03-08 Apple Inc. Conductive PVD stack-up design to improve reliability of deposited electrodes
CN112911824A (zh) * 2019-12-04 2021-06-04 菲尼萨公司 用于光纤印刷电路板组件的表面安装技术
DE102021100530A1 (de) 2021-01-13 2022-07-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
US12222240B2 (en) 2021-06-02 2025-02-11 Luminar Technologies, Inc. Protective mask for an optical receiver
US11953722B2 (en) 2021-06-02 2024-04-09 Luminar Technologies, Inc. Protective mask for an optical receiver
US12376401B2 (en) * 2022-03-29 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming optical modules

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126912A1 (en) 2003-10-27 2007-06-07 Koninklijke Philips Electronics N.V. Camera module and manufacturing method for such a camera module
JP2011059691A (ja) * 2009-09-11 2011-03-24 E-Pin Optical Industry Co Ltd 堆積ディスク状光学レンズアレイ、堆積レンズモジュール及びその製法（ＳｔａｃｋｅｄＤｉｓｋ−ｓｈａｐｅｄＯｐｔｉｃａｌＬｅｎｓＡｒｒａｙ，ＳｔａｃｋｅｄＬｅｎｓＭｏｄｕｌｅａｎｄＴｈｅｉｒＭｅｔｈｏｄｏｆＭａｎｕｆａｃｔｕｒｉｎｇＴｈｅｒｅｏｆ）
US20130264586A1 (en) 2012-04-05 2013-10-10 Heptagon Micro Optics Pte. Ltd. Opto-Electronic Module

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3042853B2 (ja) 1989-02-16 2000-05-22 テキサス インスツルメンツ インコーポレイテツド 集積回路
JPH0782142B2 (ja) * 1989-06-29 1995-09-06 スタンレー電気株式会社 Ｌｅｄイレーサの組立方法
JPH0749487Y2 (ja) * 1989-06-29 1995-11-13 スタンレー電気株式会社 Ｌｅｄイレーサ
JP2902898B2 (ja) * 1993-05-17 1999-06-07 京セラ株式会社 画像装置
JP2958212B2 (ja) * 1993-05-21 1999-10-06 京セラ株式会社 画像装置
JPH08234071A (ja) * 1995-02-27 1996-09-13 Kyocera Corp 画像装置
US6096155A (en) 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
US5912872A (en) 1996-09-27 1999-06-15 Digital Optics Corporation Integrated optical apparatus providing separated beams on a detector and associated methods
JP2000025270A (ja) * 1998-03-31 2000-01-25 Kyocera Corp 光プリンタヘッド
KR100393057B1 (ko) * 2000-10-20 2003-07-31 삼성전자주식회사 마이크로 렌즈 일체형 표면광 레이저
US6917461B2 (en) * 2000-12-29 2005-07-12 Texas Instruments Incorporated Laminated package
JP2004071366A (ja) * 2002-08-07 2004-03-04 Omron Corp 光電センサ
JP4526776B2 (ja) * 2003-04-02 2010-08-18 株式会社半導体エネルギー研究所 発光装置及び電子機器
US20050009239A1 (en) * 2003-07-07 2005-01-13 Wolff Larry Lee Optoelectronic packaging with embedded window
US7452140B2 (en) * 2003-07-16 2008-11-18 Ibiden Co., Ltd. Protective sealing of optoelectronic modules
JP2005038956A (ja) * 2003-07-17 2005-02-10 Matsushita Electric Ind Co Ltd 光部品とその製造方法
EP1569276A1 (en) * 2004-02-27 2005-08-31 Heptagon OY Micro-optics on optoelectronics
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7326583B2 (en) * 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US8097897B2 (en) * 2005-06-21 2012-01-17 Epistar Corporation High-efficiency light-emitting device and manufacturing method thereof
US7245065B2 (en) * 2005-03-31 2007-07-17 Eastman Kodak Company Reducing angular dependency in microcavity color OLEDs
JP4640248B2 (ja) * 2005-07-25 2011-03-02 豊田合成株式会社 光源装置
JP5209177B2 (ja) * 2005-11-14 2013-06-12 新光電気工業株式会社 半導体装置および半導体装置の製造方法
KR100648628B1 (ko) * 2005-12-29 2006-11-24 서울반도체 주식회사 발광 다이오드
JP4881001B2 (ja) * 2005-12-29 2012-02-22 シチズン電子株式会社 発光装置
US7795600B2 (en) * 2006-03-24 2010-09-14 Goldeneye, Inc. Wavelength conversion chip for use with light emitting diodes and method for making same
US8866168B2 (en) * 2006-04-18 2014-10-21 Lighting Science Group Corporation Optical devices for controlled color mixing
US20080068939A1 (en) * 2006-09-19 2008-03-20 Akihiro Tanaka Objective lens actuator, diffractive optical element, and optical pickup device
US8013350B2 (en) * 2007-02-05 2011-09-06 Panasonic Corporation Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device
US7692256B2 (en) 2007-03-23 2010-04-06 Heptagon Oy Method of producing a wafer scale package
DE102007041133A1 (de) * 2007-08-30 2009-03-05 Osram Opto Semiconductors Gmbh Gehäuse mit einem Gehäuseunterteil, sowie Verfahren zur Aussendung elektromagnetischer Strahlung
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
EP2220684A1 (en) 2007-11-27 2010-08-25 Heptagon Oy Encapsulated lens stack
JP4891214B2 (ja) * 2007-12-13 2012-03-07 シャープ株式会社 電子素子ウエハモジュール、電子素子モジュール、センサウエハモジュール、センサモジュール、レンズアレイ板、センサモジュールの製造方法および電子情報機器
EP2223173B1 (en) * 2007-12-19 2013-09-04 Heptagon Micro Optics Pte. Ltd. Camera device and manufacturing methods therefor
TWI478808B (zh) 2007-12-19 2015-04-01 Heptagon Micro Optics Pte Ltd 製造光學元件的方法
JP2009212171A (ja) * 2008-03-01 2009-09-17 Yoshiaki Sonoda チップ型ｌｅｄの実装方法
KR101506264B1 (ko) * 2008-06-13 2015-03-30 삼성전자주식회사 발광 소자, 발광 장치 및 상기 발광 소자의 제조 방법
WO2010020062A1 (en) 2008-08-20 2010-02-25 Heptagon Oy Method of manufacturing a pluralty of optical devices
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
KR101497953B1 (ko) * 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
WO2010056083A2 (ko) * 2008-11-14 2010-05-20 삼성엘이디 주식회사 반도체 발광소자
US8963190B2 (en) * 2009-08-25 2015-02-24 Toshiba Lighting & Technology Corporation Light-emitting device and lighting apparatus
US20110293168A1 (en) * 2010-05-25 2011-12-01 Yoshihiko Matsushima Method for mounting transparent component
WO2011156926A1 (en) * 2010-06-14 2011-12-22 Heptagon Oy Method of manufacturing a plurality of optical devices
KR101182920B1 (ko) * 2010-07-05 2012-09-13 엘지이노텍 주식회사 발광 소자 및 그 제조방법
TW201208131A (en) * 2010-08-05 2012-02-16 Everlight Electronics Co Ltd Light emitting diode package structure
US9391247B2 (en) * 2010-12-16 2016-07-12 Cree, Inc. High power LEDs with non-polymer material lenses and methods of making the same
US8957430B2 (en) * 2011-06-15 2015-02-17 Cree, Inc. Gel underfill layers for light emitting diodes
CN103975436B (zh) * 2011-07-19 2019-05-10 新加坡恒立私人有限公司 制造无源光学器件和包含该无源光学器件的装置的方法
SG193151A1 (en) * 2011-07-19 2013-09-30 Heptagon Micro Optics Pte Ltd Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126912A1 (en) 2003-10-27 2007-06-07 Koninklijke Philips Electronics N.V. Camera module and manufacturing method for such a camera module
JP2011059691A (ja) * 2009-09-11 2011-03-24 E-Pin Optical Industry Co Ltd 堆積ディスク状光学レンズアレイ、堆積レンズモジュール及びその製法（ＳｔａｃｋｅｄＤｉｓｋ−ｓｈａｐｅｄＯｐｔｉｃａｌＬｅｎｓＡｒｒａｙ，ＳｔａｃｋｅｄＬｅｎｓＭｏｄｕｌｅａｎｄＴｈｅｉｒＭｅｔｈｏｄｏｆＭａｎｕｆａｃｔｕｒｉｎｇＴｈｅｒｅｏｆ）
US20130264586A1 (en) 2012-04-05 2013-10-10 Heptagon Micro Optics Pte. Ltd. Opto-Electronic Module

Also Published As

Publication number Publication date
JP6247633B2 (ja) 2017-12-13
CN103858230B (zh) 2018-03-27
SG10201606075XA (en) 2016-09-29
TWI552275B (zh) 2016-10-01
TWI601244B (zh) 2017-10-01
SG2014005805A (en) 2014-06-27
WO2013020238A1 (en) 2013-02-14
TW201312706A (zh) 2013-03-16
EP2742529B1 (en) 2020-11-11
EP2742529A1 (en) 2014-06-18
US20130037831A1 (en) 2013-02-14
US9786820B2 (en) 2017-10-10
TW201717326A (zh) 2017-05-16
US20160072023A1 (en) 2016-03-10
KR20140057596A (ko) 2014-05-13
US9224772B2 (en) 2015-12-29
CN103858230A (zh) 2014-06-11
JP2014524663A (ja) 2014-09-22

Similar Documents

Publication Publication Date Title
KR101890457B1 (ko) 광전자 모듈 및 그것을 제조하기 위한 방법
US10096644B2 (en) Optical devices, in particular computational cameras, and methods for manufacturing the same
US11005001B2 (en) Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
US10903197B2 (en) Assembly of wafer stacks
KR102177372B1 (ko) 광전자 모듈, 특히 플래시 모듈, 및 그것을 제조하기 위한 방법
KR101966478B1 (ko) 수동 광학 부품을 제조하기 위한 방법 및 그것을 포함하는 장치
US10180235B2 (en) Optical module, in particular opto-electronic module, and method of manufacturing the same

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20210806

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20220804

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R17 Change to representative recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R17-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000