KR101887975B1 - 열전 변환 장치 및 그 제조 방법 - Google Patents

열전 변환 장치 및 그 제조 방법 Download PDF

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Publication number
KR101887975B1
KR101887975B1 KR1020157023626A KR20157023626A KR101887975B1 KR 101887975 B1 KR101887975 B1 KR 101887975B1 KR 1020157023626 A KR1020157023626 A KR 1020157023626A KR 20157023626 A KR20157023626 A KR 20157023626A KR 101887975 B1 KR101887975 B1 KR 101887975B1
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KR
South Korea
Prior art keywords
thermoelectric conversion
surface pattern
conversion element
insulating substrate
back surface
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Expired - Fee Related
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KR1020157023626A
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English (en)
Korean (ko)
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KR20150113155A (ko
Inventor
요시히코 시라이시
아츠시 사카이다
도시히사 다니구치
게이타 사이토우
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가부시키가이샤 덴소
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Publication of KR20150113155A publication Critical patent/KR20150113155A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H01L35/08—
    • H01L35/12—
    • H01L35/16—
    • H01L35/18—
    • H01L35/34—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
KR1020157023626A 2013-03-05 2014-03-05 열전 변환 장치 및 그 제조 방법 Expired - Fee Related KR101887975B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2013-043089 2013-03-05
JP2013043089 2013-03-05
JPJP-P-2013-212413 2013-10-10
JP2013212413A JP6064861B2 (ja) 2013-03-05 2013-10-10 熱電変換装置の製造方法
PCT/JP2014/055635 WO2014136841A1 (ja) 2013-03-05 2014-03-05 熱電変換装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20150113155A KR20150113155A (ko) 2015-10-07
KR101887975B1 true KR101887975B1 (ko) 2018-08-14

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KR1020157023626A Expired - Fee Related KR101887975B1 (ko) 2013-03-05 2014-03-05 열전 변환 장치 및 그 제조 방법

Country Status (7)

Country Link
US (1) US20160027984A1 (enExample)
EP (1) EP2966699A4 (enExample)
JP (1) JP6064861B2 (enExample)
KR (1) KR101887975B1 (enExample)
CN (1) CN105027307B (enExample)
TW (1) TWI535079B (enExample)
WO (1) WO2014136841A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014007376A (ja) * 2012-05-30 2014-01-16 Denso Corp 熱電変換装置
JP6183327B2 (ja) 2014-09-30 2017-08-23 株式会社デンソー 熱電変換装置
CN108886084A (zh) * 2016-03-31 2018-11-23 株式会社村田制作所 热电转换模块以及热电转换模块的制造方法
CN105870314B (zh) * 2016-04-26 2018-08-07 桂林电子科技大学 一种柔性硅基纳米薄膜热电器件
KR101931634B1 (ko) * 2016-06-01 2018-12-21 엘지이노텍 주식회사 열전 레그 및 이를 포함하는 열전 소자
DE102016209683A1 (de) * 2016-06-02 2017-12-07 Mahle International Gmbh Thermoelektrisches Modul
EP3550618B1 (en) * 2016-11-29 2020-10-07 KYOCERA Corporation Thermoelectric module
JP7203037B2 (ja) 2017-03-31 2023-01-12 スリーエム イノベイティブ プロパティズ カンパニー 固体半導体ダイを含む電子機器
AR113022A1 (es) 2017-09-29 2020-01-15 Lilly Co Eli Anticuerpo anti-pacap
JP6988630B2 (ja) * 2018-03-26 2022-01-05 株式会社デンソー 熱流束センサの製造方法
JP7315377B2 (ja) 2018-10-05 2023-07-26 株式会社Kelk 熱電モジュール
TWI869155B (zh) * 2024-01-08 2025-01-01 國立成功大學 可撓式熱電發電模組及其製作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003309294A (ja) * 2002-02-12 2003-10-31 Komatsu Ltd 熱電モジュール
JP2012134410A (ja) * 2010-12-24 2012-07-12 Hitachi Powdered Metals Co Ltd 熱電変換モジュールおよびその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179375A (ja) * 1988-01-05 1989-07-17 Agency Of Ind Science & Technol 熱電モジュール
DE69132779T2 (de) * 1990-04-20 2002-07-11 Matsushita Electric Industrial Co., Ltd. Vakuumisolierter thermoelektrischer Halbleiter und thermoelektrisches Bauelement, das P- und N-Typ thermoelektrische Halbleiter benutzt
US6127619A (en) * 1998-06-08 2000-10-03 Ormet Corporation Process for producing high performance thermoelectric modules
JP2003282974A (ja) 2002-03-26 2003-10-03 Yamaha Corp 熱電変換モジュール
JP2004087913A (ja) * 2002-08-28 2004-03-18 Yamaha Corp 銅メッキセラミックス基板およびその製造方法ならびに銅メッキセラミックス基板を備えた熱電モジュール
JP2005217353A (ja) * 2004-02-02 2005-08-11 Yokohama Teikoki Kk 熱電半導体素子、熱電変換モジュールおよびその製造方法
JP2005223140A (ja) * 2004-02-05 2005-08-18 Toshiba Corp 熱電変換モジュール及び熱電変換システム
JP2006294931A (ja) * 2005-04-12 2006-10-26 Toyota Industries Corp 熱電モジュールの製造方法及び熱電モジュール
DE102006055120B4 (de) * 2006-11-21 2015-10-01 Evonik Degussa Gmbh Thermoelektrische Elemente, Verfahren zu deren Herstellung und deren Verwendung
US20080289677A1 (en) * 2007-05-25 2008-11-27 Bsst Llc Composite thermoelectric materials and method of manufacture
JP2009170438A (ja) * 2007-10-23 2009-07-30 Ibiden Co Ltd 熱電変換装置の製造方法
JP2009111137A (ja) * 2007-10-30 2009-05-21 Toyota Motor Corp 熱電変換部材の配列方法
JP2010050356A (ja) 2008-08-22 2010-03-04 Shin-Etsu Chemical Co Ltd ヘテロ接合太陽電池の製造方法及びヘテロ接合太陽電池
JP2010157645A (ja) * 2008-12-29 2010-07-15 National Institute Of Advanced Industrial Science & Technology 熱電発電ユニット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003309294A (ja) * 2002-02-12 2003-10-31 Komatsu Ltd 熱電モジュール
JP2012134410A (ja) * 2010-12-24 2012-07-12 Hitachi Powdered Metals Co Ltd 熱電変換モジュールおよびその製造方法

Also Published As

Publication number Publication date
CN105027307A (zh) 2015-11-04
KR20150113155A (ko) 2015-10-07
CN105027307B (zh) 2017-12-26
JP6064861B2 (ja) 2017-01-25
TWI535079B (zh) 2016-05-21
TW201501377A (zh) 2015-01-01
US20160027984A1 (en) 2016-01-28
EP2966699A8 (en) 2016-03-23
EP2966699A4 (en) 2017-02-01
WO2014136841A1 (ja) 2014-09-12
JP2014197660A (ja) 2014-10-16
EP2966699A1 (en) 2016-01-13

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