KR101877862B1 - 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 Download PDF

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KR101877862B1
KR101877862B1 KR1020150180178A KR20150180178A KR101877862B1 KR 101877862 B1 KR101877862 B1 KR 101877862B1 KR 1020150180178 A KR1020150180178 A KR 1020150180178A KR 20150180178 A KR20150180178 A KR 20150180178A KR 101877862 B1 KR101877862 B1 KR 101877862B1
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light
plasma
window
processing
processing chamber
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KR20160075350A (ko
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다케시 오모리
다이스케 사토
다테히토 우스이
사토미 이노우에
겐지 마에다
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P14/6514—
    • H10P14/6532—
    • H10P50/267—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR1020150180178A 2014-12-19 2015-12-16 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법 Active KR101877862B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014256786 2014-12-19
JPJP-P-2014-256786 2014-12-19

Related Child Applications (1)

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KR1020180078517A Division KR101960826B1 (ko) 2014-12-19 2018-07-06 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법

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KR20160075350A KR20160075350A (ko) 2016-06-29
KR101877862B1 true KR101877862B1 (ko) 2018-07-12

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KR1020180078517A Active KR101960826B1 (ko) 2014-12-19 2018-07-06 플라즈마 처리 장치 및 플라즈마 처리 장치의 운전 방법

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US (2) US10008370B2 (enExample)
JP (2) JP6650259B2 (enExample)
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Cited By (1)

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KR20200098472A (ko) * 2019-02-08 2020-08-20 주식회사 히타치하이테크 에칭 처리 장치, 에칭 처리 방법 및 검출기

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JP6524753B2 (ja) * 2015-03-30 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
US11126092B2 (en) * 2015-11-13 2021-09-21 Asml Netherlands B.V. Methods for determining an approximate value of a processing parameter at which a characteristic of the patterning process has a target value
JP6643202B2 (ja) * 2016-07-21 2020-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理データを解析する解析方法
US10365212B2 (en) * 2016-11-14 2019-07-30 Verity Instruments, Inc. System and method for calibration of optical signals in semiconductor process systems
JP2018107264A (ja) * 2016-12-26 2018-07-05 東京エレクトロン株式会社 消耗判定方法及びプラズマ処理装置
US10134569B1 (en) * 2017-11-28 2018-11-20 Lam Research Corporation Method and apparatus for real-time monitoring of plasma chamber wall condition
CN108461412A (zh) * 2018-03-22 2018-08-28 北京北方华创微电子装备有限公司 在线监测系统及半导体加工设备
KR102030428B1 (ko) 2018-03-28 2019-11-18 삼성전자주식회사 방출 분광기의 캘리브레이터
KR102833948B1 (ko) 2018-11-22 2025-07-15 삼성전자주식회사 기판 처리 장치, 기판 처리 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102687949B1 (ko) 2018-12-27 2024-07-25 삼성전자주식회사 기판 처리 장치, 기판 처리 모듈 및 반도체 소자 제조 방법
JP6807488B1 (ja) * 2019-02-15 2021-01-06 株式会社日立ハイテク ガス成分のモニタ方法及びその装置並びにそれを用いた処理装置
JP7183090B2 (ja) * 2019-03-20 2022-12-05 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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KR102728521B1 (ko) * 2019-04-05 2024-11-13 삼성전자주식회사 광학 방출 분석 캘리브레이션 장치 및 시스템
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US12002665B2 (en) * 2019-07-01 2024-06-04 Applied Materials, Inc. Real-time detection of particulate matter during deposition chamber manufacturing
JP7095029B2 (ja) * 2019-09-09 2022-07-04 芝浦メカトロニクス株式会社 プラズマ処理装置
CN113130280B (zh) * 2019-12-31 2024-03-12 中微半导体设备(上海)股份有限公司 光强度监测调节机构、调节方法及等离子体处理装置
JP2021163949A (ja) * 2020-04-03 2021-10-11 東京エレクトロン株式会社 測定方法及びプラズマ処理装置
US12009191B2 (en) 2020-06-12 2024-06-11 Applied Materials, Inc. Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall
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CN114643234A (zh) * 2020-12-18 2022-06-21 日月光半导体制造股份有限公司 电浆检测器、电浆清洗系统及清洗器件的方法
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JP2023080674A (ja) * 2021-11-30 2023-06-09 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理装置の使用方法
US12467136B2 (en) 2022-03-16 2025-11-11 Applied Materials, Inc. Process characterization and correction using optical wall process sensor (OWPS)
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JPH02170971A (ja) * 1988-12-23 1990-07-02 Shimadzu Corp スパッタリング装置
JPH05259250A (ja) * 1992-03-16 1993-10-08 Hitachi Ltd プラズマ処理装置のプラズマモニタ装置
JPH08106992A (ja) * 1994-03-24 1996-04-23 Hitachi Ltd プラズマ処理方法およびその装置
JPH09162165A (ja) * 1995-12-04 1997-06-20 Fujitsu Ltd 処理装置及びそのクリーニング方法
JPH10102251A (ja) * 1996-09-06 1998-04-21 Toshio Goto 炭素原子による成膜及びエッチング処理方法及びその装置
KR0152355B1 (ko) * 1994-03-24 1998-12-01 가나이 쓰토무 플라즈마 처리장치 및 처리방법
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Publication number Priority date Publication date Assignee Title
JPH02170971A (ja) * 1988-12-23 1990-07-02 Shimadzu Corp スパッタリング装置
JPH05259250A (ja) * 1992-03-16 1993-10-08 Hitachi Ltd プラズマ処理装置のプラズマモニタ装置
JPH08106992A (ja) * 1994-03-24 1996-04-23 Hitachi Ltd プラズマ処理方法およびその装置
KR0152355B1 (ko) * 1994-03-24 1998-12-01 가나이 쓰토무 플라즈마 처리장치 및 처리방법
JPH09162165A (ja) * 1995-12-04 1997-06-20 Fujitsu Ltd 処理装置及びそのクリーニング方法
JPH10102251A (ja) * 1996-09-06 1998-04-21 Toshio Goto 炭素原子による成膜及びエッチング処理方法及びその装置
KR20030073327A (ko) * 2002-03-11 2003-09-19 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200098472A (ko) * 2019-02-08 2020-08-20 주식회사 히타치하이테크 에칭 처리 장치, 에칭 처리 방법 및 검출기
KR102286360B1 (ko) 2019-02-08 2021-08-05 주식회사 히타치하이테크 에칭 처리 장치, 에칭 처리 방법 및 검출기

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JP2020065081A (ja) 2020-04-23
US20180269042A1 (en) 2018-09-20
US10008370B2 (en) 2018-06-26
KR20180081693A (ko) 2018-07-17
JP6650259B2 (ja) 2020-02-19
US20160177449A1 (en) 2016-06-23
US10672595B2 (en) 2020-06-02
JP2016119473A (ja) 2016-06-30
KR101960826B1 (ko) 2019-07-17
TWI592980B (zh) 2017-07-21
JP6877601B2 (ja) 2021-05-26
KR20160075350A (ko) 2016-06-29
TW201624528A (zh) 2016-07-01

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