JP6650259B2 - プラズマ処理装置及びプラズマ処理装置の運転方法 - Google Patents

プラズマ処理装置及びプラズマ処理装置の運転方法 Download PDF

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Publication number
JP6650259B2
JP6650259B2 JP2015246855A JP2015246855A JP6650259B2 JP 6650259 B2 JP6650259 B2 JP 6650259B2 JP 2015246855 A JP2015246855 A JP 2015246855A JP 2015246855 A JP2015246855 A JP 2015246855A JP 6650259 B2 JP6650259 B2 JP 6650259B2
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light
plasma
processing chamber
processing
wall
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JP2016119473A5 (enExample
JP2016119473A (ja
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大森　健史
健史 大森
佐藤　大祐
大祐 佐藤
臼井　建人
建人 臼井
智己 井上
智己 井上
賢治 前田
賢治 前田
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Hitachi High Tech Corp
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    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P14/6514—
    • H10P14/6532—
    • H10P50/267—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP2015246855A 2014-12-19 2015-12-18 プラズマ処理装置及びプラズマ処理装置の運転方法 Active JP6650259B2 (ja)

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JP2014256786 2014-12-19
JP2014256786 2014-12-19

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JP (2) JP6650259B2 (enExample)
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Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6524753B2 (ja) * 2015-03-30 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
US11126092B2 (en) * 2015-11-13 2021-09-21 Asml Netherlands B.V. Methods for determining an approximate value of a processing parameter at which a characteristic of the patterning process has a target value
JP6643202B2 (ja) * 2016-07-21 2020-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理データを解析する解析方法
US10365212B2 (en) * 2016-11-14 2019-07-30 Verity Instruments, Inc. System and method for calibration of optical signals in semiconductor process systems
JP2018107264A (ja) * 2016-12-26 2018-07-05 東京エレクトロン株式会社 消耗判定方法及びプラズマ処理装置
US10134569B1 (en) * 2017-11-28 2018-11-20 Lam Research Corporation Method and apparatus for real-time monitoring of plasma chamber wall condition
CN108461412A (zh) * 2018-03-22 2018-08-28 北京北方华创微电子装备有限公司 在线监测系统及半导体加工设备
KR102030428B1 (ko) 2018-03-28 2019-11-18 삼성전자주식회사 방출 분광기의 캘리브레이터
KR102833948B1 (ko) 2018-11-22 2025-07-15 삼성전자주식회사 기판 처리 장치, 기판 처리 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102687949B1 (ko) 2018-12-27 2024-07-25 삼성전자주식회사 기판 처리 장치, 기판 처리 모듈 및 반도체 소자 제조 방법
KR102286360B1 (ko) * 2019-02-08 2021-08-05 주식회사 히타치하이테크 에칭 처리 장치, 에칭 처리 방법 및 검출기
JP6807488B1 (ja) * 2019-02-15 2021-01-06 株式会社日立ハイテク ガス成分のモニタ方法及びその装置並びにそれを用いた処理装置
JP7183090B2 (ja) * 2019-03-20 2022-12-05 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10871396B2 (en) 2019-04-05 2020-12-22 Samsung Electronics Co., Ltd. Optical emission spectroscopy calibration device and system including the same
KR102728521B1 (ko) * 2019-04-05 2024-11-13 삼성전자주식회사 광학 방출 분석 캘리브레이션 장치 및 시스템
US11114286B2 (en) * 2019-04-08 2021-09-07 Applied Materials, Inc. In-situ optical chamber surface and process sensor
US12002665B2 (en) * 2019-07-01 2024-06-04 Applied Materials, Inc. Real-time detection of particulate matter during deposition chamber manufacturing
JP7095029B2 (ja) * 2019-09-09 2022-07-04 芝浦メカトロニクス株式会社 プラズマ処理装置
CN113130280B (zh) * 2019-12-31 2024-03-12 中微半导体设备(上海)股份有限公司 光强度监测调节机构、调节方法及等离子体处理装置
JP2021163949A (ja) * 2020-04-03 2021-10-11 東京エレクトロン株式会社 測定方法及びプラズマ処理装置
US12009191B2 (en) 2020-06-12 2024-06-11 Applied Materials, Inc. Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall
US11708635B2 (en) 2020-06-12 2023-07-25 Applied Materials, Inc. Processing chamber condition and process state monitoring using optical reflector attached to processing chamber liner
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
WO2022054072A1 (en) * 2020-09-13 2022-03-17 Sigma Carbon Technologies System for growth of crystalline material(s)
KR102872758B1 (ko) * 2020-12-08 2025-10-21 삼성전자주식회사 플라즈마 처리 장치, 이를 이용한 반도체 소자 제조 공정의 모니터링 방법 및 모니터링 방법을 포함하는 반도체 소자의 제조 방법
CN114643234A (zh) * 2020-12-18 2022-06-21 日月光半导体制造股份有限公司 电浆检测器、电浆清洗系统及清洗器件的方法
US20220333236A1 (en) * 2021-04-16 2022-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing apparatus with improved production yield
CN117813679A (zh) * 2021-08-17 2024-04-02 东京毅力科创株式会社 用于测量半导体等离子体加工室中的可消耗部件的特性的光学传感器
US12031910B2 (en) 2021-09-15 2024-07-09 Applied Materials, Inc. Transmission corrected plasma emission using in-situ optical reflectometry
JP2023080674A (ja) * 2021-11-30 2023-06-09 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理装置の使用方法
US12467136B2 (en) 2022-03-16 2025-11-11 Applied Materials, Inc. Process characterization and correction using optical wall process sensor (OWPS)
US12469686B2 (en) 2022-03-16 2025-11-11 Applied Materials, Inc. Process characterization and correction using optical wall process sensor (OWPS)
USD1031743S1 (en) 2022-05-06 2024-06-18 Applied Materials, Inc. Portion of a display panel with a graphical user interface
US12406837B2 (en) 2022-06-15 2025-09-02 Applied Materials, Inc. Reaction cell for species sensing
US20250164410A1 (en) * 2023-11-22 2025-05-22 Tokyo Electron Limited Optical metrology
CN117423600B (zh) * 2023-12-19 2024-04-23 哈尔滨工业大学 一种氟碳化合物等离子体基团空间分布监测装置及方法
CN118824833B (zh) * 2024-09-14 2024-12-17 杭州积海半导体有限公司 一种干法刻蚀设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH081904B2 (ja) * 1987-05-26 1996-01-10 松下電器産業株式会社 プラズマ・エッチング・モニタ−方法
JPH02170971A (ja) * 1988-12-23 1990-07-02 Shimadzu Corp スパッタリング装置
JPH05259250A (ja) * 1992-03-16 1993-10-08 Hitachi Ltd プラズマ処理装置のプラズマモニタ装置
KR950034499A (ko) * 1994-01-28 1995-12-28 제임스 조셉 드롱 물리적인 증기증착 과정동안 필름들의 증착속도를 모니터하기 위한 방법 및 장치
US5759424A (en) 1994-03-24 1998-06-02 Hitachi, Ltd. Plasma processing apparatus and processing method
JPH08106992A (ja) * 1994-03-24 1996-04-23 Hitachi Ltd プラズマ処理方法およびその装置
JPH09162165A (ja) * 1995-12-04 1997-06-20 Fujitsu Ltd 処理装置及びそのクリーニング方法
JP3897380B2 (ja) * 1996-09-06 2007-03-22 俊夫 後藤 処理方法及びその装置
JPH11140655A (ja) * 1997-11-14 1999-05-25 Sony Corp プラズマ処理装置
JP2000031124A (ja) * 1998-07-14 2000-01-28 Matsushita Electric Ind Co Ltd 半導体製造装置
JP3535785B2 (ja) * 1999-11-26 2004-06-07 Ｎｅｃエレクトロニクス株式会社 クリーニング終点検出装置およびクリーニング終点検出方法
JP2002246320A (ja) 2001-02-20 2002-08-30 Hitachi Ltd プラズマ処理装置のプラズマクリーニング方法
US6908529B2 (en) 2002-03-05 2005-06-21 Hitachi High-Technologies Corporation Plasma processing apparatus and method
KR100812744B1 (ko) * 2002-03-11 2008-03-12 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
JP3637041B2 (ja) * 2002-08-06 2005-04-06 株式会社日立ハイテクノロジーズ 試料処理装置及び試料処理システム

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JP2020065081A (ja) 2020-04-23
US20180269042A1 (en) 2018-09-20
US10008370B2 (en) 2018-06-26
KR20180081693A (ko) 2018-07-17
US20160177449A1 (en) 2016-06-23
US10672595B2 (en) 2020-06-02
JP2016119473A (ja) 2016-06-30
KR101877862B1 (ko) 2018-07-12
KR101960826B1 (ko) 2019-07-17
TWI592980B (zh) 2017-07-21
JP6877601B2 (ja) 2021-05-26
KR20160075350A (ko) 2016-06-29
TW201624528A (zh) 2016-07-01

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