JP6650259B2 - プラズマ処理装置及びプラズマ処理装置の運転方法 - Google Patents

プラズマ処理装置及びプラズマ処理装置の運転方法 Download PDF

Info

Publication number
JP6650259B2
JP6650259B2 JP2015246855A JP2015246855A JP6650259B2 JP 6650259 B2 JP6650259 B2 JP 6650259B2 JP 2015246855 A JP2015246855 A JP 2015246855A JP 2015246855 A JP2015246855 A JP 2015246855A JP 6650259 B2 JP6650259 B2 JP 6650259B2
Authority
JP
Japan
Prior art keywords
light
plasma
processing chamber
processing
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015246855A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016119473A (ja
JP2016119473A5 (enExample
Inventor
大森　健史
健史 大森
佐藤　大祐
大祐 佐藤
臼井　建人
建人 臼井
智己 井上
智己 井上
賢治 前田
賢治 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of JP2016119473A publication Critical patent/JP2016119473A/ja
Publication of JP2016119473A5 publication Critical patent/JP2016119473A5/ja
Application granted granted Critical
Publication of JP6650259B2 publication Critical patent/JP6650259B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP2015246855A 2014-12-19 2015-12-18 プラズマ処理装置及びプラズマ処理装置の運転方法 Active JP6650259B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014256786 2014-12-19
JP2014256786 2014-12-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020005557A Division JP6877601B2 (ja) 2014-12-19 2020-01-17 プラズマ処理装置及びプラズマ処理装置の運転方法

Publications (3)

Publication Number Publication Date
JP2016119473A JP2016119473A (ja) 2016-06-30
JP2016119473A5 JP2016119473A5 (enExample) 2019-02-14
JP6650259B2 true JP6650259B2 (ja) 2020-02-19

Family

ID=56128761

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015246855A Active JP6650259B2 (ja) 2014-12-19 2015-12-18 プラズマ処理装置及びプラズマ処理装置の運転方法
JP2020005557A Active JP6877601B2 (ja) 2014-12-19 2020-01-17 プラズマ処理装置及びプラズマ処理装置の運転方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2020005557A Active JP6877601B2 (ja) 2014-12-19 2020-01-17 プラズマ処理装置及びプラズマ処理装置の運転方法

Country Status (4)

Country Link
US (2) US10008370B2 (enExample)
JP (2) JP6650259B2 (enExample)
KR (2) KR101877862B1 (enExample)
TW (1) TWI592980B (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6524753B2 (ja) * 2015-03-30 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
WO2017080729A1 (en) * 2015-11-13 2017-05-18 Asml Netherlands B.V. Methods for identifying a process window boundary
JP6643202B2 (ja) * 2016-07-21 2020-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理データを解析する解析方法
US10365212B2 (en) * 2016-11-14 2019-07-30 Verity Instruments, Inc. System and method for calibration of optical signals in semiconductor process systems
JP2018107264A (ja) * 2016-12-26 2018-07-05 東京エレクトロン株式会社 消耗判定方法及びプラズマ処理装置
US10134569B1 (en) * 2017-11-28 2018-11-20 Lam Research Corporation Method and apparatus for real-time monitoring of plasma chamber wall condition
CN108461412A (zh) * 2018-03-22 2018-08-28 北京北方华创微电子装备有限公司 在线监测系统及半导体加工设备
KR102030428B1 (ko) 2018-03-28 2019-11-18 삼성전자주식회사 방출 분광기의 캘리브레이터
KR102833948B1 (ko) 2018-11-22 2025-07-15 삼성전자주식회사 기판 처리 장치, 기판 처리 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102687949B1 (ko) 2018-12-27 2024-07-25 삼성전자주식회사 기판 처리 장치, 기판 처리 모듈 및 반도체 소자 제조 방법
JP6804694B1 (ja) * 2019-02-08 2020-12-23 株式会社日立ハイテク エッチング処理装置、エッチング処理方法および検出器
US11835465B2 (en) * 2019-02-15 2023-12-05 Hitachi High-Tech Corporation Detecting method and detecting device of gas components and processing apparatus using detecting device of gas components
JP7183090B2 (ja) * 2019-03-20 2022-12-05 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10871396B2 (en) 2019-04-05 2020-12-22 Samsung Electronics Co., Ltd. Optical emission spectroscopy calibration device and system including the same
KR102728521B1 (ko) * 2019-04-05 2024-11-13 삼성전자주식회사 광학 방출 분석 캘리브레이션 장치 및 시스템
US11114286B2 (en) * 2019-04-08 2021-09-07 Applied Materials, Inc. In-situ optical chamber surface and process sensor
US12002665B2 (en) * 2019-07-01 2024-06-04 Applied Materials, Inc. Real-time detection of particulate matter during deposition chamber manufacturing
JP7095029B2 (ja) * 2019-09-09 2022-07-04 芝浦メカトロニクス株式会社 プラズマ処理装置
CN113130280B (zh) * 2019-12-31 2024-03-12 中微半导体设备(上海)股份有限公司 光强度监测调节机构、调节方法及等离子体处理装置
JP2021163949A (ja) * 2020-04-03 2021-10-11 東京エレクトロン株式会社 測定方法及びプラズマ処理装置
US12009191B2 (en) 2020-06-12 2024-06-11 Applied Materials, Inc. Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall
US11708635B2 (en) 2020-06-12 2023-07-25 Applied Materials, Inc. Processing chamber condition and process state monitoring using optical reflector attached to processing chamber liner
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
WO2022054072A1 (en) * 2020-09-13 2022-03-17 Sigma Carbon Technologies System for growth of crystalline material(s)
KR102872758B1 (ko) * 2020-12-08 2025-10-21 삼성전자주식회사 플라즈마 처리 장치, 이를 이용한 반도체 소자 제조 공정의 모니터링 방법 및 모니터링 방법을 포함하는 반도체 소자의 제조 방법
CN114643234A (zh) * 2020-12-18 2022-06-21 日月光半导体制造股份有限公司 电浆检测器、电浆清洗系统及清洗器件的方法
US20220333236A1 (en) * 2021-04-16 2022-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing apparatus with improved production yield
WO2023023444A1 (en) * 2021-08-17 2023-02-23 Tokyo Electron Limited Optical sensors for measuring properties of consumable parts in a semiconductor plasma processing chamber
US12031910B2 (en) 2021-09-15 2024-07-09 Applied Materials, Inc. Transmission corrected plasma emission using in-situ optical reflectometry
JP7821974B2 (ja) * 2021-11-30 2026-03-02 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理装置の使用方法
US12467136B2 (en) 2022-03-16 2025-11-11 Applied Materials, Inc. Process characterization and correction using optical wall process sensor (OWPS)
US12469686B2 (en) 2022-03-16 2025-11-11 Applied Materials, Inc. Process characterization and correction using optical wall process sensor (OWPS)
USD1031743S1 (en) 2022-05-06 2024-06-18 Applied Materials, Inc. Portion of a display panel with a graphical user interface
US12406837B2 (en) 2022-06-15 2025-09-02 Applied Materials, Inc. Reaction cell for species sensing
US20230411129A1 (en) * 2022-06-15 2023-12-21 Applied Materials, Inc. Closed-loop control of plasma source via feedback from laser absorption species sensor
US20250164410A1 (en) * 2023-11-22 2025-05-22 Tokyo Electron Limited Optical metrology
CN117423600B (zh) * 2023-12-19 2024-04-23 哈尔滨工业大学 一种氟碳化合物等离子体基团空间分布监测装置及方法
CN118824833B (zh) * 2024-09-14 2024-12-17 杭州积海半导体有限公司 一种干法刻蚀设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH081904B2 (ja) * 1987-05-26 1996-01-10 松下電器産業株式会社 プラズマ・エッチング・モニタ−方法
JPH02170971A (ja) * 1988-12-23 1990-07-02 Shimadzu Corp スパッタリング装置
JPH05259250A (ja) * 1992-03-16 1993-10-08 Hitachi Ltd プラズマ処理装置のプラズマモニタ装置
EP0665577A1 (en) * 1994-01-28 1995-08-02 Applied Materials, Inc. Method and apparatus for monitoring the deposition rate of films during physical vapour deposition
JPH08106992A (ja) * 1994-03-24 1996-04-23 Hitachi Ltd プラズマ処理方法およびその装置
KR0152355B1 (ko) * 1994-03-24 1998-12-01 가나이 쓰토무 플라즈마 처리장치 및 처리방법
JPH09162165A (ja) * 1995-12-04 1997-06-20 Fujitsu Ltd 処理装置及びそのクリーニング方法
JP3897380B2 (ja) * 1996-09-06 2007-03-22 俊夫 後藤 処理方法及びその装置
JPH11140655A (ja) * 1997-11-14 1999-05-25 Sony Corp プラズマ処理装置
JP2000031124A (ja) * 1998-07-14 2000-01-28 Matsushita Electric Ind Co Ltd 半導体製造装置
JP3535785B2 (ja) * 1999-11-26 2004-06-07 Ｎｅｃエレクトロニクス株式会社 クリーニング終点検出装置およびクリーニング終点検出方法
JP2002246320A (ja) 2001-02-20 2002-08-30 Hitachi Ltd プラズマ処理装置のプラズマクリーニング方法
US6908529B2 (en) 2002-03-05 2005-06-21 Hitachi High-Technologies Corporation Plasma processing apparatus and method
KR100812744B1 (ko) * 2002-03-11 2008-03-12 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치 및 플라즈마처리방법
JP3637041B2 (ja) * 2002-08-06 2005-04-06 株式会社日立ハイテクノロジーズ 試料処理装置及び試料処理システム

Also Published As

Publication number Publication date
JP2020065081A (ja) 2020-04-23
JP2016119473A (ja) 2016-06-30
KR101960826B1 (ko) 2019-07-17
TW201624528A (zh) 2016-07-01
KR20180081693A (ko) 2018-07-17
KR20160075350A (ko) 2016-06-29
KR101877862B1 (ko) 2018-07-12
TWI592980B (zh) 2017-07-21
JP6877601B2 (ja) 2021-05-26
US20180269042A1 (en) 2018-09-20
US10008370B2 (en) 2018-06-26
US20160177449A1 (en) 2016-06-23
US10672595B2 (en) 2020-06-02

Similar Documents

Publication Publication Date Title
JP6650259B2 (ja) プラズマ処理装置及びプラズマ処理装置の運転方法
JP7025897B2 (ja) 半導体処理システム内の光信号の校正のためのシステムおよび方法
TWI853176B (zh) 通過處理腔室壁內的透明晶體和透明基板進行薄膜原位測量
KR101203592B1 (ko) 근적외선 스펙트럼 반사광 측정을 이용한 개선된 프로세스 감지 및 제어
US9548189B2 (en) Plasma etching systems and methods using empirical mode decomposition
WO2020142451A1 (en) Monitoring process wall depositions and coatings
US20070215043A1 (en) Substrate processing apparatus, deposit monitoring apparatus, and deposit monitoring method
CN110823864B (zh) 光学发射光谱系统及其校准方法和制造半导体器件的方法
JP6329790B2 (ja) プラズマ処理装置
KR101591961B1 (ko) 플라즈마 처리 챔버의 플라즈마 상태 분석 장치 및 방법
US20180057935A1 (en) Endpoint detection for a chamber cleaning process
US8197634B2 (en) Plasma processing apparatus
JP5778893B2 (ja) 終点検出装置、プラズマ処理装置および終点検出方法
TW202449211A (zh) 處理腔室條件的光譜感測
KR20220086488A (ko) 반도체/디스플레이 플라즈마 화학증착공정 모니터링 전용 실시간 온도편차 보정 발광분광분석시스템
KR102854480B1 (ko) 광원을 이용한 oes 플라즈마 모니터링 시스템 및 플라즈마 공정 모니터링 방법
TWI860349B (zh) 用於校準光發射光譜儀的方法
TW202436845A (zh) 用於半導體製程之光譜監測之改良光接達
JP2025126134A (ja) 表示パネル製造装置
KR101939634B1 (ko) 플라즈마 반응기 벽면 상태 진단 방법
CN118919439A (zh) 传感器装置和使用该传感器装置的半导体处理设备

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151221

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170119

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170125

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181128

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181130

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191101

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20191224

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200120

R150 Certificate of patent or registration of utility model

Ref document number: 6650259

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350