TWI592980B - Plasma processing apparatus and plasma processing apparatus operating method - Google Patents

Plasma processing apparatus and plasma processing apparatus operating method Download PDF

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Publication number
TWI592980B
TWI592980B TW104142478A TW104142478A TWI592980B TW I592980 B TWI592980 B TW I592980B TW 104142478 A TW104142478 A TW 104142478A TW 104142478 A TW104142478 A TW 104142478A TW I592980 B TWI592980 B TW I592980B
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TW
Taiwan
Prior art keywords
light
plasma
processing chamber
processing
wall
Prior art date
Application number
TW104142478A
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English (en)
Chinese (zh)
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TW201624528A (zh
Inventor
大森健史
佐藤大祐
臼井建人
井上智己
前田賢治
Original Assignee
日立全球先端科技股份有限公司
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Publication of TW201624528A publication Critical patent/TW201624528A/zh
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Publication of TWI592980B publication Critical patent/TWI592980B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
TW104142478A 2014-12-19 2015-12-17 Plasma processing apparatus and plasma processing apparatus operating method TWI592980B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014256786 2014-12-19

Publications (2)

Publication Number Publication Date
TW201624528A TW201624528A (zh) 2016-07-01
TWI592980B true TWI592980B (zh) 2017-07-21

Family

ID=56128761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104142478A TWI592980B (zh) 2014-12-19 2015-12-17 Plasma processing apparatus and plasma processing apparatus operating method

Country Status (4)

Country Link
US (2) US10008370B2 (enExample)
JP (2) JP6650259B2 (enExample)
KR (2) KR101877862B1 (enExample)
TW (1) TWI592980B (enExample)

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US11114286B2 (en) * 2019-04-08 2021-09-07 Applied Materials, Inc. In-situ optical chamber surface and process sensor
US12002665B2 (en) * 2019-07-01 2024-06-04 Applied Materials, Inc. Real-time detection of particulate matter during deposition chamber manufacturing
JP7095029B2 (ja) * 2019-09-09 2022-07-04 芝浦メカトロニクス株式会社 プラズマ処理装置
CN113130280B (zh) * 2019-12-31 2024-03-12 中微半导体设备(上海)股份有限公司 光强度监测调节机构、调节方法及等离子体处理装置
JP2021163949A (ja) * 2020-04-03 2021-10-11 東京エレクトロン株式会社 測定方法及びプラズマ処理装置
US12009191B2 (en) 2020-06-12 2024-06-11 Applied Materials, Inc. Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall
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Also Published As

Publication number Publication date
JP2020065081A (ja) 2020-04-23
JP2016119473A (ja) 2016-06-30
KR101960826B1 (ko) 2019-07-17
TW201624528A (zh) 2016-07-01
KR20180081693A (ko) 2018-07-17
KR20160075350A (ko) 2016-06-29
JP6650259B2 (ja) 2020-02-19
KR101877862B1 (ko) 2018-07-12
JP6877601B2 (ja) 2021-05-26
US20180269042A1 (en) 2018-09-20
US10008370B2 (en) 2018-06-26
US20160177449A1 (en) 2016-06-23
US10672595B2 (en) 2020-06-02

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