KR950034499A - 물리적인 증기증착 과정동안 필름들의 증착속도를 모니터하기 위한 방법 및 장치 - Google Patents

물리적인 증기증착 과정동안 필름들의 증착속도를 모니터하기 위한 방법 및 장치 Download PDF

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KR950034499A
KR950034499A KR1019950001465A KR19950001465A KR950034499A KR 950034499 A KR950034499 A KR 950034499A KR 1019950001465 A KR1019950001465 A KR 1019950001465A KR 19950001465 A KR19950001465 A KR 19950001465A KR 950034499 A KR950034499 A KR 950034499A
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deposition
light
signal
optical detector
substrate
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KR1019950001465A
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눌먼 제임
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제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR950034499A publication Critical patent/KR950034499A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Abstract

광학적 감쇠의 측정을 토대로 한 증착속도 모니터가 장치상에 얇은 금속필름을 증착시키는데 사용되는 스퍼터링 시스템과 같은 증착장치내에서 사용되며, 광의 빔이 증착원과 증착기판 사이의 영역을 통해 통과 되고 광이 검파기에서 검파되기 전에 원으로 기판으로 재료가 전달됨에 의해 광의 빔이 감쇠되고 증착 환경을 통해 통과되는 광이 감쇠수준은 재료가 기판상에 증착되는 속도에서 경험적으로 연관되며 광흡수 증착속도 모니터는 증착속도를 일정하게 유지하도록 공정변수를 조정하는데 사용될 수 있다.

Description

물리적인 증기증착 과정동안 필름들의 증착속도를 모니터하기 위한 방법 및 장치.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 바람직한 실시예에 따른 증착속도 모니터를 도시하고 있다. 제3도는 증착속도와 광학검파기로 부터의 출력신호 사이의 관계를 나타낸 개략적 설명도이다. 제4도는 본 발명의 다른 실시예이다.

Claims (17)

  1. a) 증착기판을 고정시키기 위해 적용된 고정부와, b) 상기 고정부상에 광을 향하게 하는 광원과, c) 상기 광이 상기 고정부를 넘어서 통과된 후 상기 광을 수용하도록 배치된 광학검파기로 이루어진 증착속도 모니터로서, 상기 광학검파기가 증착공정개시전에 제1신호를 생성하고 그리고 상기 광학검파기가 증착공정동안 제2신호를 생성하는 증착속도 모니터.
  2. 제1항에 있어서, 반도체 웨이퍼를 더 포함하는 증착속도 모니터.
  3. 제1항에 있어서, 상기 광원이 반도체 레이저로 이루어지는 증착속도 모니터.
  4. 제1항에 있어서, 상기 제2신호와 상기 제1신호 사이의 비율을 형성하는 수단을 더 포함하는 증착속도 모니터.
  5. 제1항에 있어서, 상기 광학 탐색기에 의해 생성된 상기 제1 및 제2신호에 응답하여 증착파라메터를 조정하는 제어시스템을 더 포함하는 두께 감시 장치.
  6. a)반도체 웨이퍼를 고정시키기 위한 고정부와, b) 상기 고정부와 인접하게 배치된 증착원, c) 실질적으로 반사가 일어나지 않으면서 상기 원 및 상기 고정부 사이의 영역을 통해 광을 향하게 하는 광원과, 그리고 d) 상기 광이 고정부를 통과한 후 상기 광을 수용하도록 배치된 광학검파기를 포함하는 물리적 증기 증착 장치로서 상기 광학검파기가 증착공정을 개시하기 전에 제1신호를 생성하고 상기 광학검파기가 증착공정을 하는 동안에 제2신호를 생성하는 증기 증착 장치.
  7. 제6항에 있어서, 상기 증착원이 스퍼터링 표적인 물리적 증기 증착 장치.
  8. 제6항에 있어서, 고정부 주위에 배치되고 적어도 하나의 광학포트를 갖는 실드 그리고 증착원을 더 포함하고 상기 광이 상기 적어도 하나의 광학포트로 통과되는 물리적 증기 증착 장치.
  9. 제8항에 있어서, a) 상기 광을 상기 고정부로 향하게 하도록 배치된 제1거울, b) 상기 광이 상기 광학검파기로 향하게 하도록 배치된 제2거울을 더 포함하는 물리적 증기 증착 장치.
  10. 상기 광학 검파기에 의해 생성된 신호에 응답하여 증착 파라메터를 조정하는 제어장치를 더 포함하는 제8항에 따른 두께 감시 장치.
  11. 제10항에 있어서, 상기 증착원에 연결된 동력공급부를 더 포함하고 상기 동력공급부가 상기 제어시스템에 연결되고 상기 제어시스템에 의해 적어도 부분적으로 제어되는 물리적 증기 증착 장치.
  12. 제6항에 있어서, 상기 제2신호와 상기 제1신호 사이의 비를 형성하기 위한 수단을 더 포함하는 증착 속도 모니터.
  13. 제12항에 있어서, 상기 광학검파기에 의해 생성된 상기 제1 및 상기 제2신호에 응답하여 증착 파라메터를 조정하는 제어시스템을 더 포함하는 두께 감시 장치.
  14. a) 증착환경에 증착기판기판을 제공하는 단계와, b) 상기 광의 증착기판에 광의 빔을 통과시키는 단계와, c) 상기 증착기판에 재료가 증착되지 않는 동안의 상기 광의 빔의 제1강도를 측정하는 단계와, d) 상기 증착기판에 재료의 필름을 증착하는 단계와 그리고 e) 상기 기판상에 상기 재료가 증착되는 동안의 상기 광의 빔의 제2의 강도를 측정하는 단계로, 이루어지는 기판상에 재료를 증착시키는 방법.
  15. 제14항에 있어서, 상기 제1강도 및 상기 제2강도로 부터 증착속도를 계산하기 위한 단계를 더 포함하는 방법.
  16. 제14항에 있어서, 제1광학포트와 제2광학포트를 통해 상기 광의 빔을 통과시키는 단계를 더 포함하는 방법.
  17. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950001465A 1994-01-28 1995-01-27 물리적인 증기증착 과정동안 필름들의 증착속도를 모니터하기 위한 방법 및 장치 KR950034499A (ko)

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US18795694A 1994-01-28 1994-01-28
US8/187956 1994-01-28

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US (1) US5754297A (ko)
EP (1) EP0665577A1 (ko)
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