TW200824021A - System and method for real-time film uniformity monitoring and controlling - Google Patents

System and method for real-time film uniformity monitoring and controlling Download PDF

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Publication number
TW200824021A
TW200824021A TW95142967A TW95142967A TW200824021A TW 200824021 A TW200824021 A TW 200824021A TW 95142967 A TW95142967 A TW 95142967A TW 95142967 A TW95142967 A TW 95142967A TW 200824021 A TW200824021 A TW 200824021A
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TW
Taiwan
Prior art keywords
uniformity
wafer
monitoring
film
system
Prior art date
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TW95142967A
Other languages
Chinese (zh)
Inventor
Wen-Li Tsai
Yu-Min Tsai
Hsiao-Che Wu
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Promos Technologies Inc
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Application filed by Promos Technologies Inc filed Critical Promos Technologies Inc
Priority to TW95142967A priority Critical patent/TW200824021A/en
Publication of TW200824021A publication Critical patent/TW200824021A/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/544Controlling the film thickness or evaporation rate using measurement in the gas phase
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/02Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
    • G01B11/0625Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating with measurement of absorption or reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/02Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
    • G01B11/0675Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating using interferometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical means
    • G01B11/02Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
    • G01B11/0683Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating measurement during deposition or removal of the layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

A real-time monitor and control system for film uniformity in a PVD apparatus is described. The system includes a shielding plate, a monitor device and a data process program. The shielding plate is disposed on the inner wall of the chamber above the wafer stage. An opening on the center of the shielding plate exposes the wafer. The monitor device includes a scanner and a sensor which are disposed on the opposite sidewall of the chamber between the shielding plate and the wafer stage. The monitor device is used for measuring the particle flux on every portion of the wafer so as to get a real-time uniformity data which includes a function of the wafer position and the flux. The data process program is to compare the real-time uniformity data and a reference uniformity date and a feedback signal is output to the PVD apparatus and adjusts the process condition for controlling uniformity of the film.

Description

200824021 95074 22096twf.doc/e IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a monitoring system and method for two semiconductor processes, and in particular to a method for -(4) self-intelligence. [Prior Art]

ϋ As the semiconductor industry continues to advance, integrated circuits continue to move toward miniaturization = operational efficiency. 'In order to respond to high difficulty and high efficiency, the design uses a layered design. Since each film has its specific function, the thickness of the film is closely related to the electrical characteristics of the component, and the wheel # of the wafer surface film is highly versatile for subsequent chemical mechanical polishing or lithography, etc. The big impact, therefore, how to accurately measure the thickness and uniformity of the film has been: the industry is quite concerned about the issue. ^ In general, the measurement method of film thickness includes interferometry, political measurement, and reflection measurement. U.S. Patent No. 5,545, the disclosure of which is incorporated herein by reference. Interferometry is used to measure the thickness and deposition or wafer surface of a wafer through a charge-coupled device (CCD) camera through a window of a certain size (viewp〇rt) during film deposition or etching. Evenness of engraving. However, in the above method, the reaction chamber must be provided with a window to supply a 13⁄4 component camera. Moreover, the charge-carrying component is easily interfered by noise (noise 'light generated by the plasma in the reaction chamber), and the collected signal i is very low, and the amount of change is smaller, resulting in insufficient sensitivity, and cannot be 2ϋϋ^ 4ϋ21 95074 22096twf.d〇c/e Accurate measurement of thin _ high and low contours. Must be limited to the choice of high _= know = interferometry, due to the large area of the wafer, the source of the soil, such as laser. However, the time measurement in each time; the second of the area: the measurement results are bound to be short-term, separately processing these signals: two = must be multi-point at the same time [Summary] The complexity of the operation is reversed. o - Seed 3 The present invention provides an embodiment for the purpose of providing it in various physical vapor deposition apparatuses in accordance with the present invention. The present invention provides another embodiment of the film uniformity of the film immediately in the 栌 吏 吏 钏 钏 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ 瞪Μ Instantly adjust the deposition process parameters. The invention proposes a film uniformity monitoring physical vapor deposition device, physical (four), holding ~ a total of the application of the rolling phase deposition, including the reaction chamber and the wafer socket holder for carrying the wafer This system includes cover panels, monitoring skirts and data + processing programs. The cover is disposed on the inner wall of the reaction chamber above the crystal seat, the opening in the center of the cover exposes the wafer, and the physical vapor deposition apparatus generates = a plurality of particles are formed on the wafer through the opening - a film. The monitoring device includes a broom and a sensor respectively disposed on opposite side walls of the reaction chamber between the cover and the wafer holder for measuring the flux of the particles on each area of the wafer and obtaining instant uniformity The degree data 'instant uniformity data' includes the relationship between wafer position and flux. The data processing program compares the instantaneous uniformity data and the uniformity reference data, and outputs a feedback signal to the physical vapor deposition device to adjust the process parameters of the physical vapor deposition device. 6 200824021 95074 22096twf.doc/e The amount of film uniformity according to an embodiment of the present invention, wherein the sensor is used to sense the absorption of the particles and the measurement system is in accordance with the present invention. In the embodiment, the instant uniformity data includes the wafer position and the absorption amount, and the film uniformity is monitored in accordance with an embodiment of the present invention, wherein the scanning H edge is monitored. - Horizontally mixed, horizontally parallel to the 曰, round surface. In accordance with the present invention - the actual self-regulating system is described, wherein the scanner includes an array of light sources. μ A system for instantaneous monitoring of film uniformity according to an embodiment of the invention, wherein the monitoring device is formed as a two-dimensional g (four) disposed on a horizontal plane of the surface of the parallel wafer.

A system for monitoring the uniformity of film uniformity according to an embodiment of the present invention, wherein the scanner outputs a high-collimation (c〇Uimated) ray. A system for instantaneous monitoring of film uniformity according to an embodiment of the invention, wherein the cover plate blocks the particles that are not deposited on the wafer. According to an embodiment of the present invention, a film uniformity monitoring system is provided, wherein the physical vapor deposition apparatus comprises a double loop electromagnetic control system. A system for instantaneous monitoring of film uniformity according to an embodiment of the present invention, wherein the physical vapor deposition apparatus comprises a magnetic coil. The present invention provides an instant monitoring method for film uniformity using the above system, which is suitable for use in a physical vapor deposition process, which comprises simultaneously measuring these particles with a thin 7 200824021 95074 22096 twf.doc/e 臈 uniformity monitoring system. ί:: Get instant evenness data. By the whole; "This two: the sentence data and the uniform sentence = the 3 type" comparison of the instant vapor deposition equipment 'adjust the physical old phase two feedback signals on the physical w μ. Process of the emulsion phase deposition equipment The method of the invention described in the first embodiment of the invention includes the self-sweeping two = quantity, the quantity and then the absorption method of the particles by the _, and the phase (four) degree of the instant monitoring ::1 material includes the function of wafer position and absorption, as described in the example, the uniformity of the monitoring of the square dance between the scanner and the wafer - the relative motion 'horizontal direction parallel to the crystal Round surface. Method, Ming - implementation of the thinness of the touch _ uniformity of the real-time monitoring side, the medium-known scanner includes an array of light sources. Method, riding (four) are self-instantaneous monitoring of the level of the side = clothing system into two The dimension arrangement is set on the parallel wafer surface method, and the thin film uniformity of the touch is performed to monitor the output of the collimated ray. The method is as described in one embodiment of the present invention. Instantaneous monitoring of film uniformity /, in the physical vapor deposition process In the step, the cover plate blocks 200824021 95074 22096twf.doc/e from the particles deposited on the wafer. The film uniformity monitoring method according to an embodiment of the invention, wherein the physical vapor deposition device comprises a double loop electromagnetic Control System: The method for monitoring the uniformity of film uniformity according to an embodiment of the present invention, wherein the process parameters of the physical vapor deposition apparatus are adjusted to adjust the flux of the particles in each region of the wafer. Uniformity monitoring system and method, f, can accurately measure the thickness of the film in each field on the wafer during the physical vapor deposition process' and compare the measurement results with the reference data The above-described and other objects, features and advantages of the present invention will become more apparent and understood from the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; DETAILED DESCRIPTION OF THE INVENTION [Embodiment] Q. FIG. 1 is a diagram showing an instant monitoring system for film uniformity according to an embodiment of the present invention. Figure 2 is a top view of the reaction chamber of Figure 1 and Figure 3A is a top view of the reaction chamber of another embodiment of Figure 1. Figure 4A is a top view of the reaction chamber of Figure 1 FIG. 4B is a partial enlarged view of FIG. 4A. Referring to FIG. 1 and FIG. 2, the film uniformity instant monitoring system in this embodiment is applicable. The physical vapor deposition apparatus 1 includes a reaction chamber 103 and a wafer holder 107 for carrying a wafer 9 200824021 95074 22096twf.doc/e 110. In this embodiment, The physical vapor deposition apparatus 1 side wall is, for example, an inductive coil 113 and a magnetic coil 115. The film uniformity monitoring system 12 includes a cover 13 , a monitoring device 140 and data processing Program. The cover 13 is disposed on the inner wall of the reaction chamber 103 above the wafer holder 1〇7, and the opening 135 in the center of the cover 130 exposes the wafer 110, and the particles form a thin film on the wafer 110 through the opening 135 (not shown). . The particles herein are, for example, a cluster of ions, atoms, and radicals generated by bombardment of a target (not shown). The material of the cover 130 may be, for example, a metal or a ceramic material. The arrangement of the cover 13 可以 can block particles that are not deposited on the surface of the wafer 11 , and not only avoids the contamination of the subsequent deposition process by the particles, but in this embodiment, the particle measurement of the subsequent measurement can be ensured. The amount is the amount of particles deposited on the wafer 110. The monitoring device 140 is disposed on the sidewall of the reaction chamber 103 between the cover 130 and the wafer holder 1〇7. Monitoring device 140 is comprised of, for example, scanner 148 and sensor 144. The two are located on the opposite/inner wall of the reaction chamber 1〇3, respectively. The ray 145 output by the scanner 148 intersects the direction in which the particles travel. When the particles pass through the ray 145, a scattering phenomenon occurs, and the intensity of the radiation 145 is reduced. The intensity of the ray 145 received by the sensor is also lowered, so that the flux can be inferred from the absorption amount of the particles. The amount of absorption at different locations will be related to the cross-sectional area being scanned. The light source of the scanner 148 may be a high collimated ray such as a laser or other light source, but since the sensor is not measuring the interference phenomenon, the choice of the light source is not limited to Ray 200824021 95074 22096twf.doc/e Or a light source with a south homology. The scanner 148 moves, for example, in a horizontal direction, horizontally on the surface of the wafer 110, and scans the entire wafer 11〇. Therefore, the particle flux on each region of the wafer 110 is measured and obtained. 2 degree data. In this embodiment, for example, a sentence diagram of the position_absorption amount (shown in Fig. 6) is obtained, and the position is obtained as a function of the amount of absorption. The preparation scanner 148 may include an array. The light source is composed of a plurality of light sources, as shown in Fig. 2. The light sources are moved in a horizontal direction in a small range, so that the particle flux of the entire wafer 110 can be obtained in real time. In an embodiment, in order to more accurately measure the particle flux of each region on the wafer 110, the monitoring device 140 may also be arranged in a two-dimensional arrangement, which is set to the horizontal plane of the surface of the parallel wafer 110, as shown in FIG. As shown, both the x-direction and the Y-direction are provided with a scanner 148, and the opposite side of the scanner 148 is provided with a sensor 144 for measuring the amount of absorption. Of course, the scanners 148 in these two directions may also be arrays. The light source 14 is composed of The scanning is moved in different directions. In addition to the above-mentioned cover 130 and monitoring device 140, the film uniformity monitoring system 120 also has a data processing program, which can be used to compare the above-mentioned instant uniformity data and uniformity reference materials. Forming a film profile, calculating a preferred process parameter, and outputting a feedback signal to the physical vapor deposition device 1 to adjust its process parameters. In this embodiment, the feedback signal is transmitted to the magnetic coil 115, for example, Changing the flux of the nuclei in each area of the wafer U to form a film with a predetermined profile. 11 200824021 95074 22096twf.doc/e Physical vapor deposition $100 is not limited to the above-mentioned ionized physical vapor deposition equipment. Referring to FIG. 4A and FIG. 4B, in an embodiment, the physical vapor deposition apparatus 100 may also be a machine having a double-loop electromagnet magnetron system 105. The double-ring electromagnet magnetron system 1 曰The arc 106 below the 〇5 is representative of the distribution of magnetic lines of force. The feedback signal is transmitted, for example, to the double-loop electromagnetic_control system 1G5, and the external electromagnet system 105a (〇uter elect R〇-magnet) and the size of the internal electromagnet system (10), so as to achieve the effect of controlling the plasma density and particle flux. The configuration of the scanner can instantly sweep the particle flux of each area of the wafer to obtain the uniformity and high profile of the film. The beta of the cover can prevent the monitoring device from measuring non-deposited on the wafer. The particles on the surface ensure the effectiveness of the measurement. In addition, the composition of the above film uniformity monitoring system is very simple and can be easily applied to physical vapor deposition equipment. And because the system = is the interferometric method to measure the thickness of the film, but to measure the absorption 1 ' so that the choice is more (four), it is limited to the same source. = The method for real-time monitoring of film uniformity proposed by the present invention is provided. I5 is a method for real-time monitoring of film uniformity according to the present invention and an embodiment. FIG. 6 is a green view showing a crystal SH standing-absorption amount of the embodiment of the present invention. FIG. 7A to FIG. 7D are diagrams showing the present invention. The simulation calculation of an embodiment is not intended. Referring to Fig. 5, the film uniformity monitoring method of the present embodiment is carried out in the physical vapor deposition process using the above system in 12 200824021 95074 22096twf.doc/e. First, the film uniformity monitoring system simultaneously measures the flux of these particles on various areas of the wafer and obtains instantaneous uniformity data. In the present embodiment, this physical vapor deposition apparatus 100 is, for example, as shown in Figs. 1 and 2. The method of measuring the flux of these particles is, for example, that the self-stroke 148 outputs rays that penetrate the particles, and then the amount of absorption of the particles is measured by the sensor. Of course, the sensor 144 may first receive the intensity of the $f ray, and then measure the intensity of the ray output, and measure the amount of particle absorption. The larger the absorption, the larger the flux of the particles, and the absorption of the broom at different positions will be proportional to the film wearing area of this position. The light source of the scanner 148 may be a small wavelength laser light source or other light source. Since the present embodiment is an amount of absorption of the particles; rather than the interference thereof, the selection of the light source is very free, and as long as the sensor 144 can measure the change in the amount of absorption, it can be used as a light source for scanning the crying. Then, since the scanner 148 can have the array light source 148a and the array light sources 148a scan in a small range, the flux of different regions on the entire wafer can be obtained. In an embodiment, the scanner 148 can also be arranged in two dimensions in the X direction and the Y direction. By scanning the known absorption amount in two directions, the absorption of each region on the wafer can be more accurately grasped. the amount. The amount of absorption at different positions on the wafer can be plotted as a graph of the absorption of the crystal position as shown in Fig. 6, and the instantaneous uniformity data is obtained. In the present embodiment, the wafer position of Fig. 6 - absorption! The functional relationship is the resulting instantaneous uniformity data. 13 200824021 95074 22096twf.doc/e In the following, the simulation calculation of the relationship between the wafer position and the absorption amount of Fig. 6 is explained step by step. Referring to Figures 7A and 7B, R is the radius of the wafer. If the thickness of the film is homogeneous, the dots on the film are thick and z = Hi = HR. Where Η is a constant 'the' is the ratio of the thickness of the plaque circle that is expected to be formed. The amount of absorption is related to the cross-sectional area of the film. The cross-section A of the film at each position can be expressed by the following formula: Ο u A = 2YxZ = 2Rsin6 χ HR = 2HR2 sin0 Please refer to Figure 7C, if the film is low in the center, both sides The high dish type (dish_like), the thickness of each point on the film is z = H2+kd2, where H2 is the thickness of the central point, such as the deviation of the edge from the central point u% η2 = ο, ηι = ο, ηκ, ^^ 4^η1Ι] k=(UH/R, d2 = x2+(Rsin α 卜 R2cgs2 0 + R2sin2 α. The film cross-sectional area D of the disc film at each position is as follows: ^ 2 jz(a) dy = RZ( a) dsin a = 2f Offset + ^(i? W (4) 2 sin2 α)) "ηα — HR sm0(--1--cos2 0) 3 3 ' Please refer to Figure 6D, if the film is center high, both sides are low The central-high 'thickness' thickness of each point on the film is z = H3 - kd2, where the thickness is the central point. If the edge is offset from the central point by u% (10), the central point thickness is H3 = 1.1H1 = 1.1HR, the thickness of the edge is 〇9m, k=^2H/R ' d2 = x2+(Rsin α )2 = r2cgs2 θ +R2sin2 α. The film cross-sectional area C of the central high-profile film at the money position X is as follows: 200824021 95074 22096tw F.doc/e C = 2^Z(a)dy = 2^RZ{a)dsina 21Κ(ΙΛΗΚ-^ψ-(Κ2 cos2 Θ +i?2 sin2 a))dsma :HR2 sincos2 Θ) by cross-sectional area The proportional relationship between A, B, and C shows that the ratio between each curve 610, 620, and 630 (refer to FIG. 6) is only related to its position, and the predetermined thickness of the film (H1=HR) or The size of the wafer is irrelevant. That is, regardless of the thickness of the formed film or the size of the wafer, the above calculation can be applied to the relationship of Figure 6. According to the predetermined film thickness and uniformity, You can calculate the relationship between the position and the suction &amp; quantity, and make the relationship diagram as shown in Figure 6. As a uniformity test data. Also ' 1/ Next, use the data processing program to compare the instantaneous uniformity data and both , degree reference material (S120). If the instantaneous uniformity data deviates from the uniformity and the poor material, a feedback signal is outputted to the physical vapor deposition device to adjust the process parameters of the physical vapor deposition device (S130). For example, if the position of the wafer obtained by the monitoring device is sucked, as shown by the curve 63 of FIG. Thick intermediate position, the center-height data t. However, the uniformity of the film to be formed is referenced to the line 610. The uniformity of the film is controlled by the adjustment of the second to the second, and the adjustment of the distribution density of the electricity is as follows.

C

200824021 95074 22096twf.doc/e number. In the ionized physical vapor deposition apparatus of Fig. 1, the feedback signal is transmitted to the magnetic coil 115, for example, to adjust the parameters of the magnetic coil 115, and to change the magnetic field or distribution in the reaction chamber to adjust the energy or density of the plasma. In the case of the electromagnet magnetron system, the feedback signal is, for example, the transmission system 1G5, correcting the operating conditions of the external electromagnet system l〇5a and the internal electromagnet pure lion, and the magnetic field difference between the two sides of the central virtual field, thereby changing the power density, Adjust the effect of the film's hook. The upper film uniformity monitoring method can accurately measure the thickness of the film in each region on the wafer in the physical vapor deposition process, and = measured, 纟. If it is compared with the reference shell material, the feedback controls the f-number of the deposition equipment, thereby achieving the effect of monitoring the surface contour of the film in real time. Its operation is simple and it is also very convenient in the choice of light source. Moreover, since the uniformity and contour of the film can be precisely controlled, it is also helpful to cooperate with the subsequent chemical polishing or (10) process, and also reduce the target consumption (targetc〇nsumptiQn). Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a physical vapor deposition apparatus having an instant monitoring system for film uniformity according to an embodiment of the present invention. 16 200824021 95074 22096twf.doc/e Figure 2 shows the top view of the reaction chamber in Figure 1. Figure 3 is a top plan view showing the reaction chamber of another embodiment. Fig. 4A is a schematic view showing a physical vapor deposition apparatus having a thinness uniformity monitoring system according to still another embodiment of the present invention. 4B is a partial enlarged view of FIG. 4A. Figure 5 is a flow chart showing the method for instantaneous monitoring of film uniformity according to an embodiment of the present invention. Huanggong

Figure 6 is a diagram showing the relationship between the position of the wafer and the amount of absorption according to an embodiment of the present invention. Figure 0 is a schematic diagram showing the simulation of an embodiment of the present invention. [Description of main component symbols] 100: Physical vapor deposition equipment 103: Reaction chamber 105 • Double loop electromagnet magnetron system 105a: External electromagnet system 105b: Internal electromagnet system 106: Arc coil 107: Wafer holder 110: Wafer 113: Inductor coil 115: Magnetic coil 120: Film uniformity instant monitoring system 130 = Cover plate 17 200824021 95074 22096twf.doc/e 135: Opening 140: Monitoring device 144: Sensor 145: Ray 148: Scanner 148a: Light source S110, S120, S130: step f'' 610, 620, 630: curve 18

Claims (1)

  1. 200824021 95074 22096twf.doc/e X. Application for Patent Park: 1. A system for real-time monitoring of film uniformity, suitable for a physical vapor deposition apparatus, the physical vapor deposition apparatus comprising a reaction chamber and a wafer holder. The wafer holder is configured to carry a wafer, and the system includes a cover plate disposed on an inner wall of the reaction chamber above the wafer holder, and one of the openings in the center of the cover plate exposes the wafer, and the physical gas a plurality of particles generated by the phase deposition device form a thin film on the wafer through the opening; a monitoring device comprising a scanner and a sensor respectively disposed between the concealing plate and the wafer holder The opposite side walls of the reaction chamber are used to measure the flux of the particles on each area of the wafer, and obtain an instant uniform data, the instantaneous uniformity data including the wafer position as a function of the flux; = Residual ^ processing program for comparing the instantaneous uniformity data with one uniform, and then outputting a feedback signal to the process parameters of the physical vapor deposition apparatus of the physical vapor deposition apparatus. The system i, such as the patent of H, the film uniformity as described in item 1 is immediately monitored and measured. The sensor is used to sense the absorption amount of the particles, and the amount of the thin layer is as described in the second item of the patent range. The instant monitoring amount of the thin layer is immediately related to the instantaneous uniformity (4) including the wafer. Position and the absorption system =====The uniformity of the instantaneous monitoring is parallel to the wafer table movement in the direction of the thousand, the horizontal direction is 5. As claimed in the patent scope! Instant Monitoring of Film Uniformity as described in the item 19 200824021 95074 22096twf.doc/e The system wherein the scanner comprises an array of light sources. /6·If the film uniformity is monitored in real time as described in the first paragraph of the patent application, the monitoring device is arranged in a two-dimensional arrangement and arranged on a horizontal plane parallel to the surface of the wafer. Μ / 7. The system for immediate monitoring of film uniformity as described in claim 1, wherein the scanner outputs a high collimation ray. I / 8. The system for immediate monitoring of film uniformity as described in claim 1, wherein the cover blocks the particles not deposited on the wafer. /9·If the film uniformity monitoring system described in item 1 of the patent application scope is mentioned, the first/medium physical vapor deposition equipment includes a double-ring electromagnetic control system 1/0. The system for real-time monitoring of film uniformity, the physical vapor deposition device of the towel comprises a magnetic coil. I u. An instant monitoring method for film uniformity using a system as claimed in claim 1 'Secure-physical vapor deposition process includes: synchronously measuring the particles on the film uniformity monitoring system Each of the fields is passed, and the instant uniformity data is obtained; using the poor material processing program, comparing the instantaneous uniformity data with the uniformity reference tribute, and the alpha tilting machine to the initial buried vapor deposition device Process parameters for vapor deposition equipment. The method for monitoring the uniformity of the film according to the scope of claim 5, wherein the method for measuring the flux of the particles comprises: 20 200824021 95074 22096twf.doc/e a radiation that penetrates the particles - and quantity. W 4 follows the absorption of the particles, thereby measuring the pass 13 · as in the patent application control method, wherein the function of the film uniformity of the instantaneous uniformity of the term relationship term includes the crystal κ position and The absorption Γ i control method is as good as possible: the film uniformity described in item 11 is immediately monitored - relative to the 5 movement along the ϊ T horizontal direction between the sweeper and the wafer ls \ the horizontal direction is parallel to the Wafer surface. The instant uniformity of film uniformity as described in π term includes an array of light sources. The control unit is in short-term monitoring of the film uniformity as described in paragraph 11 of the tl patent. The monitoring device is arranged in a two-dimensional arrangement and arranged at a level parallel to the surface of the circle.柝方,: Patent scope* The instant uniformity of the film uniformity described in item 11,, /, the scanner outputs a high-collimation ray. ^ The film uniformity as described in the scope of claim 即时n is immediately monitored. wherein, in the step of performing the physical vapor deposition process, the concealing plate blocks the particles not deposited on the wafer. &amp; _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A uniformity monitoring method in which process parameters of the physical vapor deposition apparatus are adjusted to adjust flux of the particles to regions of the wafer. twenty one
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