KR101870001B1 - 노광 장치, 노광 방법 및 디바이스의 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스의 제조 방법 Download PDF

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Publication number
KR101870001B1
KR101870001B1 KR1020140128984A KR20140128984A KR101870001B1 KR 101870001 B1 KR101870001 B1 KR 101870001B1 KR 1020140128984 A KR1020140128984 A KR 1020140128984A KR 20140128984 A KR20140128984 A KR 20140128984A KR 101870001 B1 KR101870001 B1 KR 101870001B1
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South Korea
Prior art keywords
pattern formation
holding unit
formation regions
pattern
substrate
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English (en)
Korean (ko)
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KR20150035439A (ko
Inventor
츠토무 다케나카
가즈히코 미시마
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020140128984A 2013-09-27 2014-09-26 노광 장치, 노광 방법 및 디바이스의 제조 방법 Active KR101870001B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013201876A JP6399739B2 (ja) 2013-09-27 2013-09-27 露光装置、露光方法、およびデバイスの製造方法
JPJP-P-2013-201876 2013-09-27

Publications (2)

Publication Number Publication Date
KR20150035439A KR20150035439A (ko) 2015-04-06
KR101870001B1 true KR101870001B1 (ko) 2018-06-22

Family

ID=52739843

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140128984A Active KR101870001B1 (ko) 2013-09-27 2014-09-26 노광 장치, 노광 방법 및 디바이스의 제조 방법

Country Status (4)

Country Link
US (1) US9400434B2 (https=)
JP (1) JP6399739B2 (https=)
KR (1) KR101870001B1 (https=)
CN (1) CN104516213B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI840811B (zh) * 2015-02-23 2024-05-01 日商尼康股份有限公司 基板處理系統及基板處理方法、以及元件製造方法
CN105137721B (zh) * 2015-09-24 2017-04-12 山东科技大学 扫描工作台各速度段进行激光直写二值图案的方法与装置
CN111694220B (zh) * 2019-03-11 2022-08-26 苏州微影激光技术有限公司 扫描式激光直接成像的同步方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6383940B1 (en) 1998-07-02 2002-05-07 Canon Kabushiki Kaisha Exposure method and apparatus

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US5281996A (en) * 1992-09-04 1994-01-25 General Signal Corporation Photolithographic reduction imaging of extended field
JPH08222495A (ja) * 1995-02-09 1996-08-30 Nikon Corp 走査型投影露光方法及び装置
JPH10229039A (ja) * 1997-02-17 1998-08-25 Nikon Corp 露光方法
JP3624919B2 (ja) * 1995-08-04 2005-03-02 株式会社ニコン 露光方法
JP3320262B2 (ja) 1995-07-07 2002-09-03 キヤノン株式会社 走査露光装置及び方法並びにそれを用いたデバイス製造方法
JPH09115817A (ja) * 1995-10-13 1997-05-02 Nikon Corp 露光方法及び装置
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
JP2000228344A (ja) * 1999-02-04 2000-08-15 Canon Inc 走査露光装置およびデバイス製造方法
JP2002099097A (ja) * 2000-09-25 2002-04-05 Nikon Corp 走査露光方法および走査型露光装置
JP2004279670A (ja) * 2003-03-14 2004-10-07 Nikon Corp 露光方法
EP1879217A4 (en) 2005-03-18 2010-06-09 Nikon Corp EXPOSURE METHOD, EXPOSURE APPARATUS, DEVICE MANUFACTURING METHOD, AND EXPOSURE APPARATUS EVALUATION METHOD
JP4522329B2 (ja) * 2005-06-24 2010-08-11 株式会社Sokudo 基板処理装置
US8125613B2 (en) * 2006-04-21 2012-02-28 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
CN100570491C (zh) 2006-06-26 2009-12-16 志圣科技（广州）有限公司 步进式曝光机的图案影像设定及倍率误差补偿方法
US20080165333A1 (en) * 2007-01-04 2008-07-10 Nikon Corporation Projection optical apparatus, exposure method and apparatus, photomask, and device and photomask manufacturing method
TWI432914B (zh) 2007-01-04 2014-04-01 尼康股份有限公司 投影光學裝置、投影曝光裝置、曝光方法、以及元件製造方法
US20110075120A1 (en) 2009-09-30 2011-03-31 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
CN102692820B (zh) 2011-03-21 2014-12-17 上海微电子装备有限公司 一种测量投影物镜畸变的装置及方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6383940B1 (en) 1998-07-02 2002-05-07 Canon Kabushiki Kaisha Exposure method and apparatus

Also Published As

Publication number Publication date
KR20150035439A (ko) 2015-04-06
US20150092169A1 (en) 2015-04-02
US9400434B2 (en) 2016-07-26
CN104516213A (zh) 2015-04-15
JP2015070057A (ja) 2015-04-13
JP6399739B2 (ja) 2018-10-03
CN104516213B (zh) 2017-12-26

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