KR101847382B1 - 아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물 - Google Patents

아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물 Download PDF

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Publication number
KR101847382B1
KR101847382B1 KR1020127023883A KR20127023883A KR101847382B1 KR 101847382 B1 KR101847382 B1 KR 101847382B1 KR 1020127023883 A KR1020127023883 A KR 1020127023883A KR 20127023883 A KR20127023883 A KR 20127023883A KR 101847382 B1 KR101847382 B1 KR 101847382B1
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KR
South Korea
Prior art keywords
group
resist
film
organic
underlayer film
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KR1020127023883A
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English (en)
Korean (ko)
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KR20130009774A (ko
Inventor
유타 칸노
마코토 나카지마
와타루 시바야마
사토시 타케다
Original Assignee
닛산 가가쿠 고교 가부시키 가이샤
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Publication of KR20130009774A publication Critical patent/KR20130009774A/ko
Application granted granted Critical
Publication of KR101847382B1 publication Critical patent/KR101847382B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020127023883A 2010-02-25 2011-02-22 아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물 KR101847382B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-039787 2010-02-25
JP2010039787 2010-02-25
PCT/JP2011/053837 WO2011105368A1 (ja) 2010-02-25 2011-02-22 アミック酸を含むシリコン含有レジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
KR20130009774A KR20130009774A (ko) 2013-01-23
KR101847382B1 true KR101847382B1 (ko) 2018-04-10

Family

ID=44506774

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127023883A KR101847382B1 (ko) 2010-02-25 2011-02-22 아믹산을 포함하는 실리콘 함유 레지스트 하층막 형성 조성물

Country Status (4)

Country Link
JP (1) JP5590354B2 (zh)
KR (1) KR101847382B1 (zh)
TW (1) TWI507825B (zh)
WO (1) WO2011105368A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160058761A (ko) * 2013-09-19 2016-05-25 닛산 가가쿠 고교 가부시키 가이샤 지방족 다환구조를 포함하는 자기조직화막의 하층막 형성조성물

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5650086B2 (ja) 2011-06-28 2015-01-07 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP5798102B2 (ja) * 2011-11-29 2015-10-21 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法
JP5846046B2 (ja) * 2011-12-06 2016-01-20 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR102515849B1 (ko) 2012-02-01 2023-03-30 닛산 가가쿠 가부시키가이샤 용제현상용 실리콘함유 레지스트 하층막 형성 조성물을 이용한 반도체장치의 제조방법
JP5882776B2 (ja) 2012-02-14 2016-03-09 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP5739360B2 (ja) * 2012-02-14 2015-06-24 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
JP6070964B2 (ja) * 2012-03-27 2017-02-01 日産化学工業株式会社 自己組織化膜の下層膜形成組成物
WO2013161372A1 (ja) * 2012-04-23 2013-10-31 日産化学工業株式会社 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物
JP6319580B2 (ja) * 2012-07-30 2018-05-09 日産化学工業株式会社 スルホン酸オニウム塩を含有するケイ素含有ｅｕｖレジスト下層膜形成組成物
JP5756134B2 (ja) 2013-01-08 2015-07-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物及びパターン形成方法
CN107003613B (zh) * 2014-12-08 2021-06-15 日产化学工业株式会社 包含具有含卤素的羧酸酰胺基的水解性硅烷的光刻用抗蚀剂下层膜形成用组合物
JP7315900B2 (ja) * 2017-12-20 2023-07-27 日産化学株式会社 光硬化性シリコン含有被覆膜形成組成物
KR20210108968A (ko) * 2018-12-27 2021-09-03 닛산 가가쿠 가부시키가이샤 막형성용 조성물
JP7382196B2 (ja) 2019-09-30 2023-11-16 サカタインクス株式会社 皮膜形成用組成物、該皮膜形成用組成物を塗工してなる積層体、該積層体を用いてなるタッチパネル、及び、硬化皮膜の形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006251794A (ja) 2005-02-24 2006-09-21 Internatl Business Mach Corp <Ibm> フォトリソグラフィ・プロセス用のフォトレジスト・トップコート
US20060240358A1 (en) 2005-03-25 2006-10-26 Fujifilm Electronic Materials U.S.A., Inc. Pretreatment compositions
JP2007226170A (ja) 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2008158002A (ja) 2006-12-20 2008-07-10 Jsr Corp レジスト下層膜用組成物及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2239301B1 (en) * 2008-01-28 2016-04-27 Toray Industries, Inc. Siloxane resin compositions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006251794A (ja) 2005-02-24 2006-09-21 Internatl Business Mach Corp <Ibm> フォトリソグラフィ・プロセス用のフォトレジスト・トップコート
US20060240358A1 (en) 2005-03-25 2006-10-26 Fujifilm Electronic Materials U.S.A., Inc. Pretreatment compositions
JP2007226170A (ja) 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2008158002A (ja) 2006-12-20 2008-07-10 Jsr Corp レジスト下層膜用組成物及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160058761A (ko) * 2013-09-19 2016-05-25 닛산 가가쿠 고교 가부시키 가이샤 지방족 다환구조를 포함하는 자기조직화막의 하층막 형성조성물
KR102285718B1 (ko) 2013-09-19 2021-08-04 닛산 가가쿠 가부시키가이샤 지방족 다환구조를 포함하는 자기조직화막의 하층막 형성조성물

Also Published As

Publication number Publication date
TWI507825B (zh) 2015-11-11
KR20130009774A (ko) 2013-01-23
JP5590354B2 (ja) 2014-09-17
TW201202855A (en) 2012-01-16
WO2011105368A1 (ja) 2011-09-01
JPWO2011105368A1 (ja) 2013-06-20

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