JP5590354B2 - アミック酸を含むシリコン含有レジスト下層膜形成組成物 - Google Patents

アミック酸を含むシリコン含有レジスト下層膜形成組成物 Download PDF

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Publication number
JP5590354B2
JP5590354B2 JP2012501786A JP2012501786A JP5590354B2 JP 5590354 B2 JP5590354 B2 JP 5590354B2 JP 2012501786 A JP2012501786 A JP 2012501786A JP 2012501786 A JP2012501786 A JP 2012501786A JP 5590354 B2 JP5590354 B2 JP 5590354B2
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Japan
Prior art keywords
group
underlayer film
resist
resist underlayer
methyl
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JP2012501786A
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English (en)
Japanese (ja)
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JPWO2011105368A1 (ja
Inventor
裕太 菅野
誠 中島
亘 柴山
諭 武田
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Nissan Chemical Corp
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Nissan Chemical Corp
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Priority to JP2012501786A priority Critical patent/JP5590354B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012501786A 2010-02-25 2011-02-22 アミック酸を含むシリコン含有レジスト下層膜形成組成物 Active JP5590354B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012501786A JP5590354B2 (ja) 2010-02-25 2011-02-22 アミック酸を含むシリコン含有レジスト下層膜形成組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010039787 2010-02-25
JP2010039787 2010-02-25
PCT/JP2011/053837 WO2011105368A1 (ja) 2010-02-25 2011-02-22 アミック酸を含むシリコン含有レジスト下層膜形成組成物
JP2012501786A JP5590354B2 (ja) 2010-02-25 2011-02-22 アミック酸を含むシリコン含有レジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
JPWO2011105368A1 JPWO2011105368A1 (ja) 2013-06-20
JP5590354B2 true JP5590354B2 (ja) 2014-09-17

Family

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JP2012501786A Active JP5590354B2 (ja) 2010-02-25 2011-02-22 アミック酸を含むシリコン含有レジスト下層膜形成組成物

Country Status (4)

Country Link
JP (1) JP5590354B2 (zh)
KR (1) KR101847382B1 (zh)
TW (1) TWI507825B (zh)
WO (1) WO2011105368A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5650086B2 (ja) 2011-06-28 2015-01-07 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP5798102B2 (ja) * 2011-11-29 2015-10-21 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法
JP5846046B2 (ja) * 2011-12-06 2016-01-20 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR20140128954A (ko) * 2012-02-01 2014-11-06 닛산 가가쿠 고교 가부시키 가이샤 용제현상용 실리콘함유 레지스트 하층막 형성 조성물을 이용한 반도체장치의 제조방법
JP5739360B2 (ja) * 2012-02-14 2015-06-24 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
JP5882776B2 (ja) * 2012-02-14 2016-03-09 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP6070964B2 (ja) * 2012-03-27 2017-02-01 日産化学工業株式会社 自己組織化膜の下層膜形成組成物
WO2013161372A1 (ja) * 2012-04-23 2013-10-31 日産化学工業株式会社 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物
US10613440B2 (en) * 2012-07-30 2020-04-07 Nissan Chemical Industries, Ltd. Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate
JP5756134B2 (ja) 2013-01-08 2015-07-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物及びパターン形成方法
CN105555888B (zh) * 2013-09-19 2019-04-02 日产化学工业株式会社 含有脂肪族多环结构的自组装膜的下层膜形成用组合物
CN107003613B (zh) 2014-12-08 2021-06-15 日产化学工业株式会社 包含具有含卤素的羧酸酰胺基的水解性硅烷的光刻用抗蚀剂下层膜形成用组合物
US20220100092A1 (en) * 2018-12-27 2022-03-31 Nissan Chemical Corporation Film forming composition
JP7382196B2 (ja) 2019-09-30 2023-11-16 サカタインクス株式会社 皮膜形成用組成物、該皮膜形成用組成物を塗工してなる積層体、該積層体を用いてなるタッチパネル、及び、硬化皮膜の形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006251794A (ja) * 2005-02-24 2006-09-21 Internatl Business Mach Corp <Ibm> フォトリソグラフィ・プロセス用のフォトレジスト・トップコート
WO2006104755A2 (en) * 2005-03-25 2006-10-05 Fujifilm Electronic Materials U.S.A., Inc. Pretreatment compositions
JP2007226170A (ja) * 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2008158002A (ja) * 2006-12-20 2008-07-10 Jsr Corp レジスト下層膜用組成物及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009096050A1 (ja) * 2008-01-28 2009-08-06 Toray Industries, Inc. シロキサン系樹脂組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006251794A (ja) * 2005-02-24 2006-09-21 Internatl Business Mach Corp <Ibm> フォトリソグラフィ・プロセス用のフォトレジスト・トップコート
WO2006104755A2 (en) * 2005-03-25 2006-10-05 Fujifilm Electronic Materials U.S.A., Inc. Pretreatment compositions
JP2007226170A (ja) * 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2008158002A (ja) * 2006-12-20 2008-07-10 Jsr Corp レジスト下層膜用組成物及びその製造方法

Also Published As

Publication number Publication date
KR20130009774A (ko) 2013-01-23
KR101847382B1 (ko) 2018-04-10
WO2011105368A1 (ja) 2011-09-01
JPWO2011105368A1 (ja) 2013-06-20
TWI507825B (zh) 2015-11-11
TW201202855A (en) 2012-01-16

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