KR101833769B1 - 브레이크장치 - Google Patents

브레이크장치 Download PDF

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Publication number
KR101833769B1
KR101833769B1 KR1020160101554A KR20160101554A KR101833769B1 KR 101833769 B1 KR101833769 B1 KR 101833769B1 KR 1020160101554 A KR1020160101554 A KR 1020160101554A KR 20160101554 A KR20160101554 A KR 20160101554A KR 101833769 B1 KR101833769 B1 KR 101833769B1
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KR
South Korea
Prior art keywords
ring
dicing
dicing ring
brake
elastic plate
Prior art date
Application number
KR1020160101554A
Other languages
English (en)
Korean (ko)
Other versions
KR20170088269A (ko
Inventor
타쿠로 미타니
호우히 카쿠
Original Assignee
미쓰보시 다이야몬도 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰보시 다이야몬도 고교 가부시키가이샤 filed Critical 미쓰보시 다이야몬도 고교 가부시키가이샤
Publication of KR20170088269A publication Critical patent/KR20170088269A/ko
Application granted granted Critical
Publication of KR101833769B1 publication Critical patent/KR101833769B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052Means for supporting or holding work during breaking
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/042Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
KR1020160101554A 2016-01-22 2016-08-10 브레이크장치 KR101833769B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016010475A JP6668776B2 (ja) 2016-01-22 2016-01-22 ブレイク装置
JPJP-P-2016-010475 2016-01-22

Publications (2)

Publication Number Publication Date
KR20170088269A KR20170088269A (ko) 2017-08-01
KR101833769B1 true KR101833769B1 (ko) 2018-03-02

Family

ID=59394409

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160101554A KR101833769B1 (ko) 2016-01-22 2016-08-10 브레이크장치

Country Status (4)

Country Link
JP (1) JP6668776B2 (zh)
KR (1) KR101833769B1 (zh)
CN (1) CN106994754B (zh)
TW (1) TWI617408B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109624109A (zh) * 2019-02-20 2019-04-16 广州安特激光技术有限公司 一种晶圆片切割装置的承载台

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647454B1 (ko) * 2002-07-01 2006-11-23 미쓰보시 다이야몬도 고교 가부시키가이샤 취성재료 기판의 스크라이브 장치 및 스크라이브 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50183B1 (zh) * 1970-03-26 1975-01-07
US4227348A (en) * 1978-12-26 1980-10-14 Rca Corporation Method of slicing a wafer
JPH062684U (ja) * 1992-06-03 1994-01-14 日新ハイボルテージ株式会社 イオン注入装置用ウエファサイズ変換アダプタ
JP3042604B2 (ja) * 1997-02-04 2000-05-15 サンケン電気株式会社 半導体ウエハ組立体切断法及び半導体ウエハ用ワイヤソー切断機
JPH10284443A (ja) * 1997-04-08 1998-10-23 Hitachi Ltd ブレーキング方法および装置
JP3657190B2 (ja) * 2000-11-13 2005-06-08 Necセミコンパッケージ・ソリューションズ株式会社 エキスパンド装置
JP4502260B2 (ja) * 2004-10-28 2010-07-14 株式会社ディスコ スピンナー洗浄装置及びダイシング装置
DE102005028112A1 (de) * 2005-06-13 2006-12-21 Schmid Technology Systems Gmbh Verfahren zur Positionierung und Lageerhaltung von Substraten, insbesondere von dünnen Siliziumwafern nach dem Drahtsägen zu deren Vereinzelung
DE102006032432B3 (de) * 2006-07-13 2007-09-27 Siltronic Ag Sägeleiste sowie Verfahren zum gleichzeitigen Abtrennen einer Vielzahl von Scheiben von einem zylindrischen Werkstück unter Verwendung der Sägeleiste
JP2010045117A (ja) * 2008-08-11 2010-02-25 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
JP5330845B2 (ja) * 2009-01-30 2013-10-30 三星ダイヤモンド工業株式会社 基板ブレーク装置
FR2961014A1 (fr) * 2010-06-08 2011-12-09 St Microelectronics Tours Sas Procede de fabrication de puces semiconductrices a partir d'une tranche semiconductrice

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647454B1 (ko) * 2002-07-01 2006-11-23 미쓰보시 다이야몬도 고교 가부시키가이샤 취성재료 기판의 스크라이브 장치 및 스크라이브 방법

Also Published As

Publication number Publication date
KR20170088269A (ko) 2017-08-01
JP2017128081A (ja) 2017-07-27
JP6668776B2 (ja) 2020-03-18
TW201726342A (zh) 2017-08-01
TWI617408B (zh) 2018-03-11
CN106994754A (zh) 2017-08-01
CN106994754B (zh) 2019-03-12

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