KR101833120B1 - 매립형 플래시 메모리용 질화물-프리 스페이서 또는 산화물 스페이서 - Google Patents

매립형 플래시 메모리용 질화물-프리 스페이서 또는 산화물 스페이서 Download PDF

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KR101833120B1
KR101833120B1 KR1020160014671A KR20160014671A KR101833120B1 KR 101833120 B1 KR101833120 B1 KR 101833120B1 KR 1020160014671 A KR1020160014671 A KR 1020160014671A KR 20160014671 A KR20160014671 A KR 20160014671A KR 101833120 B1 KR101833120 B1 KR 101833120B1
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South Korea
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charge
memory
gate
spacer
sidewall
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KR1020160014671A
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English (en)
Korean (ko)
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KR20170053098A (ko
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웨이쳉 우
주이청 리엔
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타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H01L27/11568—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L27/1157—
    • H01L27/11578—
    • H01L27/11582—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1434—Memory
    • H01L2924/1435—Random access memory [RAM]
    • H01L2924/1443—Non-volatile random-access memory [NVRAM]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020160014671A 2015-11-05 2016-02-05 매립형 플래시 메모리용 질화물-프리 스페이서 또는 산화물 스페이서 KR101833120B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/933,046 2015-11-05
US14/933,046 US9960176B2 (en) 2015-11-05 2015-11-05 Nitride-free spacer or oxide spacer for embedded flash memory

Publications (2)

Publication Number Publication Date
KR20170053098A KR20170053098A (ko) 2017-05-15
KR101833120B1 true KR101833120B1 (ko) 2018-02-27

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KR1020160014671A KR101833120B1 (ko) 2015-11-05 2016-02-05 매립형 플래시 메모리용 질화물-프리 스페이서 또는 산화물 스페이서

Country Status (6)

Country Link
US (5) US9960176B2 (ja)
JP (1) JP6388625B2 (ja)
KR (1) KR101833120B1 (ja)
CN (1) CN106684088B (ja)
DE (1) DE102016100018B4 (ja)
TW (1) TWI595633B (ja)

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KR101892689B1 (ko) * 2014-10-14 2018-08-28 삼성전기주식회사 칩 전자부품 및 칩 전자부품의 실장 기판
US10879256B2 (en) * 2017-11-22 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded memory using SOI structures and methods
US11164881B2 (en) * 2018-09-11 2021-11-02 Globalfoundries Singapore Pte. Ltd. Transistor device, memory arrays, and methods of forming the same
US11217596B2 (en) * 2018-09-20 2022-01-04 Taiwan Semiconductor Manufacturing Co., Ltd. Flash memory with improved gate structure and a method of creating the same
US20200203333A1 (en) * 2018-12-21 2020-06-25 Texas Instruments Incorporated Vertical bipolar transistor for esd protection and method for fabricating
DE102020119199A1 (de) * 2019-10-23 2021-04-29 Taiwan Semiconductor Manufacturing Co. Ltd. 3d-ferroelektrikum-speicher
US11315949B2 (en) 2020-09-15 2022-04-26 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Charge-trapping sidewall spacer-type non-volatile memory device and method
US11417741B2 (en) 2020-11-20 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated chip with a gate structure over a recess

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US20080067572A1 (en) 2006-09-19 2008-03-20 Nima Mokhlesi Array of Non-Volatile Memory Cells With Floating Gates Formed of Spacers in Substrate Trenches
US20150008509A1 (en) * 2013-07-05 2015-01-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for manufacturing a double-gate electronic memory cell and associated memory cell
US20150102430A1 (en) 2013-10-11 2015-04-16 Spansion Llc Spacer Formation with Straight Sidewall
US20150236030A1 (en) 2014-02-18 2015-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Split Gate Memory Device and Method of Fabricating the Same

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JP2009535800A (ja) * 2006-04-26 2009-10-01 エヌエックスピー ビー ヴィ 不揮発性メモリデバイス
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US20150008509A1 (en) * 2013-07-05 2015-01-08 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for manufacturing a double-gate electronic memory cell and associated memory cell
US20150102430A1 (en) 2013-10-11 2015-04-16 Spansion Llc Spacer Formation with Straight Sidewall
US20150236030A1 (en) 2014-02-18 2015-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Split Gate Memory Device and Method of Fabricating the Same

Also Published As

Publication number Publication date
US10475805B2 (en) 2019-11-12
JP2017092470A (ja) 2017-05-25
US10347649B2 (en) 2019-07-09
US20210074712A1 (en) 2021-03-11
DE102016100018A1 (de) 2017-05-11
JP6388625B2 (ja) 2018-09-12
CN106684088B (zh) 2019-07-19
DE102016100018B4 (de) 2023-08-24
US20190252394A1 (en) 2019-08-15
US20200035692A1 (en) 2020-01-30
TW201717363A (zh) 2017-05-16
US10847530B2 (en) 2020-11-24
TWI595633B (zh) 2017-08-11
US20170133388A1 (en) 2017-05-11
US9960176B2 (en) 2018-05-01
KR20170053098A (ko) 2017-05-15
US11264400B2 (en) 2022-03-01
US20180219018A1 (en) 2018-08-02
CN106684088A (zh) 2017-05-17

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