KR101827975B1 - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
KR101827975B1
KR101827975B1 KR1020110102836A KR20110102836A KR101827975B1 KR 101827975 B1 KR101827975 B1 KR 101827975B1 KR 1020110102836 A KR1020110102836 A KR 1020110102836A KR 20110102836 A KR20110102836 A KR 20110102836A KR 101827975 B1 KR101827975 B1 KR 101827975B1
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KR
South Korea
Prior art keywords
layer
semiconductor layer
electrode
light emitting
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110102836A
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English (en)
Korean (ko)
Other versions
KR20130038465A (ko
Inventor
문지형
이상열
정영규
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110102836A priority Critical patent/KR101827975B1/ko
Priority to US13/370,601 priority patent/US8884312B2/en
Priority to JP2012029681A priority patent/JP5923329B2/ja
Priority to EP12162167.6A priority patent/EP2581952A3/en
Priority to CN201210171651.8A priority patent/CN103035803B/zh
Publication of KR20130038465A publication Critical patent/KR20130038465A/ko
Priority to US14/499,459 priority patent/US9356007B2/en
Application granted granted Critical
Publication of KR101827975B1 publication Critical patent/KR101827975B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020110102836A 2011-10-10 2011-10-10 발광소자 Expired - Fee Related KR101827975B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020110102836A KR101827975B1 (ko) 2011-10-10 2011-10-10 발광소자
US13/370,601 US8884312B2 (en) 2011-10-10 2012-02-10 Light emitting device and lighting apparatus including the same
JP2012029681A JP5923329B2 (ja) 2011-10-10 2012-02-14 発光素子及びこれを含む照明装置
EP12162167.6A EP2581952A3 (en) 2011-10-10 2012-03-29 Light emitting diode, light emitting diode package and lighting apparatus including the same
CN201210171651.8A CN103035803B (zh) 2011-10-10 2012-05-29 发光器件、发光器件封装件以及包括其的照明装置
US14/499,459 US9356007B2 (en) 2011-10-10 2014-09-29 Light emitting device and lighting apparatus including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110102836A KR101827975B1 (ko) 2011-10-10 2011-10-10 발광소자

Publications (2)

Publication Number Publication Date
KR20130038465A KR20130038465A (ko) 2013-04-18
KR101827975B1 true KR101827975B1 (ko) 2018-03-29

Family

ID=45936981

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110102836A Expired - Fee Related KR101827975B1 (ko) 2011-10-10 2011-10-10 발광소자

Country Status (5)

Country Link
US (2) US8884312B2 (https=)
EP (1) EP2581952A3 (https=)
JP (1) JP5923329B2 (https=)
KR (1) KR101827975B1 (https=)
CN (1) CN103035803B (https=)

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JP6287317B2 (ja) 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP6302303B2 (ja) * 2014-03-17 2018-03-28 株式会社東芝 半導体発光素子
KR102347456B1 (ko) * 2015-03-09 2022-01-07 서울바이오시스 주식회사 반도체 발광소자
US10326050B2 (en) * 2015-02-16 2019-06-18 Seoul Viosys Co., Ltd. Light-emitting device with improved light extraction efficiency
KR102343497B1 (ko) * 2015-03-26 2021-12-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 포함하는 발광 소자 패키지
JP6563703B2 (ja) * 2015-06-18 2019-08-21 アルパッド株式会社 半導体発光装置
DE102015111046B9 (de) * 2015-07-08 2022-09-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
KR102412409B1 (ko) * 2015-10-26 2022-06-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
US12015103B2 (en) * 2017-01-10 2024-06-18 PlayNitride Display Co., Ltd. Micro light emitting diode display panel with option of choosing to emit light both or respectively of light-emitting regions
TWI646680B (zh) * 2017-01-10 2019-01-01 英屬開曼群島商錼創科技股份有限公司 微型發光二極體晶片以及顯示面板
CN107293535B (zh) * 2017-06-09 2020-01-10 电子科技大学 一种基于倒装封装的led芯片结构
KR102410809B1 (ko) * 2017-08-25 2022-06-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
JP7096489B2 (ja) * 2018-09-20 2022-07-06 日亜化学工業株式会社 半導体素子の製造方法
US20210074880A1 (en) * 2018-12-18 2021-03-11 Bolb Inc. Light-output-power self-awareness light-emitting device
CN109713089A (zh) * 2018-12-28 2019-05-03 映瑞光电科技(上海)有限公司 GaN基LED白光垂直结构芯片及其制备方法
CN111816783B (zh) * 2019-04-12 2023-08-15 交互数字Ce专利控股公司 包括一组正圆形中空柱体的有机发光二极管单元
CN110176438B (zh) * 2019-06-11 2021-06-08 厦门市三安光电科技有限公司 发光二极管
EP4155538A4 (en) * 2020-06-30 2023-12-13 Mitsubishi Shipbuilding Co., Ltd. FLOAT FOR OFFSHORE WIND TURBINE
EP3944344B1 (en) 2020-07-21 2022-10-19 Nichia Corporation Light emitting element and method of manufacturing light emitting element
JP7312953B2 (ja) * 2020-07-21 2023-07-24 日亜化学工業株式会社 発光素子及び発光素子の製造方法
CN113193025B (zh) * 2021-04-27 2024-05-07 深圳市华星光电半导体显示技术有限公司 显示面板及显示装置
CN118712307B (zh) * 2024-07-23 2025-11-11 泉州三安半导体科技有限公司 一种发光二极管及发光装置

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JP2010157551A (ja) * 2008-12-26 2010-07-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子、およびその製造方法

Also Published As

Publication number Publication date
US20130087814A1 (en) 2013-04-11
EP2581952A2 (en) 2013-04-17
US20150014713A1 (en) 2015-01-15
JP2013084878A (ja) 2013-05-09
CN103035803B (zh) 2017-05-31
KR20130038465A (ko) 2013-04-18
JP5923329B2 (ja) 2016-05-24
US8884312B2 (en) 2014-11-11
US9356007B2 (en) 2016-05-31
EP2581952A3 (en) 2016-03-09
CN103035803A (zh) 2013-04-10

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