KR101826843B1 - Ｂ-필드 집중기를 사용하는 금속성 샤워헤드를 구비한 유도 플라즈마 소오스 - Google Patents

Ｂ-필드 집중기를 사용하는 금속성 샤워헤드를 구비한 유도 플라즈마 소오스 Download PDF

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KR101826843B1
KR101826843B1 KR1020127032671A KR20127032671A KR101826843B1 KR 101826843 B1 KR101826843 B1 KR 101826843B1 KR 1020127032671 A KR1020127032671 A KR 1020127032671A KR 20127032671 A KR20127032671 A KR 20127032671A KR 101826843 B1 KR101826843 B1 KR 101826843B1
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conductive
disposed
conductive ring
induction coil
annular induction
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KR20130079435A (ko
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캔펭 라이
제프리 토빈
피터 아이. 포르슈네브
조세 안토니오 마린
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
KR1020127032671A 2010-05-14 2011-04-25 Ｂ-필드 집중기를 사용하는 금속성 샤워헤드를 구비한 유도 플라즈마 소오스 Active KR101826843B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/780,531 2010-05-14
US12/780,531 US20110278260A1 (en) 2010-05-14 2010-05-14 Inductive plasma source with metallic shower head using b-field concentrator
PCT/US2011/033735 WO2011142957A2 (en) 2010-05-14 2011-04-25 Inductive plasma source with metallic shower head using b-field concentrator

Publications (2)

Publication Number Publication Date
KR20130079435A KR20130079435A (ko) 2013-07-10
KR101826843B1 true KR101826843B1 (ko) 2018-02-07

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US (3) US20110278260A1 (https=)
JP (2) JP2013533575A (https=)
KR (1) KR101826843B1 (https=)
CN (1) CN102893705B (https=)
TW (1) TWI520169B (https=)
WO (1) WO2011142957A2 (https=)

Families Citing this family (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110278260A1 (en) * 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US9449793B2 (en) * 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
JP5745812B2 (ja) * 2010-10-27 2015-07-08 東京エレクトロン株式会社 プラズマ処理装置
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US10271416B2 (en) * 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
TWI596644B (zh) * 2012-03-22 2017-08-21 藍姆研究公司 流體分配元件組件及電漿處理設備
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
TW201405627A (zh) * 2012-07-20 2014-02-01 Applied Materials Inc 具有同軸ｒｆ饋送及同軸遮罩之對稱的感應性耦合電漿源
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US10249479B2 (en) * 2015-01-30 2019-04-02 Applied Materials, Inc. Magnet configurations for radial uniformity tuning of ICP plasmas
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) * 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US9953888B1 (en) * 2016-12-15 2018-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Electromagnetic detection device and semiconductor manufacturing system
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10629415B2 (en) 2017-03-28 2020-04-21 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrate
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
CN108882494B (zh) * 2017-05-08 2022-06-17 北京北方华创微电子装备有限公司 等离子体装置
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
KR102560283B1 (ko) 2018-01-24 2023-07-26 삼성전자주식회사 샤워 헤드를 설계하고 제조하는 장치 및 방법
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11177067B2 (en) * 2018-07-25 2021-11-16 Lam Research Corporation Magnetic shielding for plasma sources
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11094508B2 (en) * 2018-12-14 2021-08-17 Applied Materials, Inc. Film stress control for plasma enhanced chemical vapor deposition
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP7221115B2 (ja) * 2019-04-03 2023-02-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6909824B2 (ja) * 2019-05-17 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
KR102901543B1 (ko) * 2019-05-29 2025-12-17 램 리써치 코포레이션 균일성 튜닝을 위한 샤워헤드 인서트
CN114787415B (zh) * 2019-12-17 2024-09-13 应用材料公司 高密度等离子体增强化学气相沉积腔室
US11499231B2 (en) * 2020-04-09 2022-11-15 Applied Materials, Inc. Lid stack for high frequency processing
WO2022093273A1 (en) * 2020-10-30 2022-05-05 Applied Materials, Inc. Rf delivery and feedthrough assembly to a processing chamber
US20240087847A1 (en) * 2022-09-09 2024-03-14 Applied Materials, Inc. Symmetric antenna arrays for high density plasma enhanced process chamber
US20240170261A1 (en) * 2022-11-21 2024-05-23 Applied Materials, Inc. Plasma generator for edge uniformity

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331993A (ja) * 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US20080050537A1 (en) * 2006-08-22 2008-02-28 Valery Godyak Inductive plasma source with high coupling efficiency

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556501A (en) 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
KR920003424A (ko) * 1990-07-13 1992-02-29 미다 가쓰시게 표면처리 장치, 표면처리방법 및 반도체장치의 제조방법
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
EP0537950B1 (en) 1991-10-17 1997-04-02 Applied Materials, Inc. Plasma reactor
JPH05136094A (ja) 1991-11-11 1993-06-01 Ramuko Kk プラズマリアクター
US5226967A (en) 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
JP3399467B2 (ja) * 1993-08-19 2003-04-21 東京エレクトロン株式会社 プラズマ処理装置及びクリーニング方法
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
US5556521A (en) 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
JPH08296037A (ja) * 1995-04-24 1996-11-12 Sony Corp 蒸着装置
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
JP3153768B2 (ja) * 1995-08-17 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置
US6095084A (en) 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
DE69719108D1 (de) * 1996-05-02 2003-03-27 Tokyo Electron Ltd Plasmabehandlungsgerät
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US6534922B2 (en) * 1996-09-27 2003-03-18 Surface Technology Systems, Plc Plasma processing apparatus
EP0838839B1 (en) * 1996-09-27 2008-05-21 Surface Technology Systems Plc Plasma processing apparatus
JP4405496B2 (ja) * 1997-02-24 2010-01-27 株式会社エフオーアイ プラズマ処理装置
JP4146905B2 (ja) * 1997-04-11 2008-09-10 東京エレクトロン株式会社 処理装置
US6706334B1 (en) * 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
GB9714341D0 (en) * 1997-07-09 1997-09-10 Surface Tech Sys Ltd Plasma processing apparatus
US6076482A (en) 1997-09-20 2000-06-20 Applied Materials, Inc. Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
US6197165B1 (en) 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
JP4046207B2 (ja) * 1998-08-06 2008-02-13 株式会社エフオーアイ プラズマ処理装置
JP2002525866A (ja) * 1998-09-22 2002-08-13 アプライド マテリアルズ インコーポレイテッド 内部誘導コイルアンテナ及び導電性チャンバ壁を有するｒｆプラズマエッチング反応器
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
JP2000315598A (ja) * 1999-03-03 2000-11-14 Anelva Corp プラズマ処理装置
TW460610B (en) * 1999-03-03 2001-10-21 Anelva Corp A plasma processing system
US6392351B1 (en) 1999-05-03 2002-05-21 Evgeny V. Shun'ko Inductive RF plasma source with external discharge bridge
TW445540B (en) * 2000-08-07 2001-07-11 Nano Architect Res Corp Bundle concentrating type multi-chamber plasma reacting system
US6417626B1 (en) * 2001-03-01 2002-07-09 Tokyo Electron Limited Immersed inductively—coupled plasma source
US6755150B2 (en) * 2001-04-20 2004-06-29 Applied Materials Inc. Multi-core transformer plasma source
AT502984B8 (de) * 2003-09-15 2008-10-15 Qasar Technologieentwicklung Gmbh Verfahren und einrichtung zur erzeugung von alfven-wellen
US20060075967A1 (en) 2004-10-12 2006-04-13 Applied Materials, Inc. Magnetic-field concentration in inductively coupled plasma reactors
US8608851B2 (en) * 2005-10-14 2013-12-17 Advanced Micro-Fabrication Equipment, Inc. Asia Plasma confinement apparatus, and method for confining a plasma
JP4528799B2 (ja) * 2006-07-31 2010-08-18 株式会社リガク 全反射蛍光ｘ線分析装置
US8992725B2 (en) * 2006-08-28 2015-03-31 Mattson Technology, Inc. Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil
JP4906448B2 (ja) * 2006-09-11 2012-03-28 新明和工業株式会社 プラズマガンの中間電極ユニット及びそれを備えるプラズマガン
KR101281188B1 (ko) 2007-01-25 2013-07-02 최대규 유도 결합 플라즈마 반응기
JP4950763B2 (ja) * 2007-05-25 2012-06-13 大陽日酸株式会社 プラズマ生成装置
US7976674B2 (en) 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
KR101358780B1 (ko) * 2007-07-20 2014-02-04 최대규 히터가 설치된 유도 결합 플라즈마 소스를 구비한 플라즈마반응기
JP5139029B2 (ja) * 2007-10-24 2013-02-06 ラム リサーチ コーポレーション プラズマ処理装置
KR100953828B1 (ko) * 2008-01-15 2010-04-20 주식회사 테스 플라즈마 처리장치
KR20090009369U (ko) 2008-03-14 2009-09-17 킴스핸들 주식회사 걸이구가 구비된 조리용기 손잡이
US20110204023A1 (en) * 2010-02-22 2011-08-25 No-Hyun Huh Multi inductively coupled plasma reactor and method thereof
US20110278260A1 (en) * 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US20120222618A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Dual plasma source, lamp heated plasma chamber
KR101297264B1 (ko) * 2011-08-31 2013-08-16 (주)젠 이중 유도 결합 플라즈마 소스를 갖는 플라즈마 반응기

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331993A (ja) * 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US20080050537A1 (en) * 2006-08-22 2008-02-28 Valery Godyak Inductive plasma source with high coupling efficiency

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