KR101826774B1 - 리소그래피에서 사용하기 위한 자가-조립가능한 중합체 및 방법 - Google Patents

리소그래피에서 사용하기 위한 자가-조립가능한 중합체 및 방법 Download PDF

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KR101826774B1
KR101826774B1 KR1020137000322A KR20137000322A KR101826774B1 KR 101826774 B1 KR101826774 B1 KR 101826774B1 KR 1020137000322 A KR1020137000322 A KR 1020137000322A KR 20137000322 A KR20137000322 A KR 20137000322A KR 101826774 B1 KR101826774 B1 KR 101826774B1
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KR20130110145A (ko
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에미엘 피터스
산더 부이스터
로엘로프 쿨레
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에이에스엠엘 네델란즈 비.브이.
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
    • C08F297/04—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type polymerising vinyl aromatic monomers and conjugated dienes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Graft Or Block Polymers (AREA)
KR1020137000322A 2010-06-04 2011-04-20 리소그래피에서 사용하기 위한 자가-조립가능한 중합체 및 방법 Active KR101826774B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35169310P 2010-06-04 2010-06-04
US61/351,693 2010-06-04
PCT/EP2011/056308 WO2011151109A1 (en) 2010-06-04 2011-04-20 Self-assemblable polymer and method for use in lithography

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KR20130110145A KR20130110145A (ko) 2013-10-08
KR101826774B1 true KR101826774B1 (ko) 2018-02-07

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US (1) US8921032B2 (https=)
JP (1) JP2013534542A (https=)
KR (1) KR101826774B1 (https=)
CN (1) CN102933628A (https=)
NL (1) NL2006639A (https=)
WO (1) WO2011151109A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US7989307B2 (en) 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US9330934B2 (en) * 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9177794B2 (en) * 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US20150337068A1 (en) 2012-02-10 2015-11-26 Karl K Berggren Preparation, purification and use of high-x diblock copolymers
US20150004379A1 (en) 2012-02-10 2015-01-01 E I Du Pont Nemours And Company Preparation, purification and use of high-x diblock copolymers
JP6211007B2 (ja) 2012-02-10 2017-10-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 高度ｘジブロックコポリマーの製造、精製及び使用
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
JP6112314B2 (ja) 2012-07-10 2017-04-12 株式会社ニコン マーク形成方法及びデバイス製造方法
JP5881565B2 (ja) * 2012-09-07 2016-03-09 東京エレクトロン株式会社 基板処理方法、プログラム及びコンピュータ記憶媒体
WO2014124795A1 (en) * 2013-02-14 2014-08-21 Asml Netherlands B.V. Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers
JP6263378B2 (ja) * 2013-02-20 2018-01-17 東京応化工業株式会社 下地剤及びパターン形成方法
TWI672788B (zh) * 2013-03-27 2019-09-21 日商尼康股份有限公司 標記形成方法、標記檢測方法、及元件製造方法
US9385026B2 (en) 2014-05-08 2016-07-05 GlobalFoundries, Inc. Sublithographic Kelvin structure patterned with DSA
JP6530907B2 (ja) * 2014-12-05 2019-06-12 東京応化工業株式会社 下地剤及び相分離構造を含む構造体の製造方法
US9738765B2 (en) * 2015-02-19 2017-08-22 International Business Machines Corporation Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
US9815947B2 (en) 2015-10-30 2017-11-14 E I Du Pont De Nemours And Company Substantially symmetrical 3-arm star block copolymers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090233236A1 (en) 2008-03-17 2009-09-17 International Business Machines Corporation Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom
WO2009151834A2 (en) 2008-05-08 2009-12-17 The Regents Of The University Of California Supramolecular block copolymer compositions for sub-micron lithography

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05165142A (ja) * 1991-12-19 1993-06-29 Seiko Epson Corp 感光体
KR20030025622A (ko) * 2001-09-21 2003-03-29 한국화학연구원 비닐기 함유 디아릴에텐 단량체 및 이를 이용하여 제조한광활성 고분자
CA2515213A1 (en) 2003-02-11 2004-08-26 University Of Washington Stimuli-responsive polymer conjugates and related methods
US20060013956A1 (en) 2004-04-20 2006-01-19 Angelescu Dan E Method and apparatus for providing shear-induced alignment of nanostructure in thin films
JP3926360B2 (ja) * 2004-10-13 2007-06-06 株式会社東芝 パターン形成方法およびそれを用いた構造体の加工方法
US8168284B2 (en) 2005-10-06 2012-05-01 Wisconsin Alumni Research Foundation Fabrication of complex three-dimensional structures based on directed assembly of self-assembling materials on activated two-dimensional templates
WO2007055371A1 (ja) * 2005-11-14 2007-05-18 Tokyo Institute Of Technology ナノポーラス基板の製造方法
WO2007075502A2 (en) 2005-12-19 2007-07-05 The Trustees Of The University Of Pennsylvania Thermo-responsive block co-polymers, and use thereof
US7347953B2 (en) * 2006-02-02 2008-03-25 International Business Machines Corporation Methods for forming improved self-assembled patterns of block copolymers
JP2007242188A (ja) * 2006-03-10 2007-09-20 Ricoh Co Ltd 構造体とそれを用いた光記録媒体
US7723009B2 (en) * 2006-06-02 2010-05-25 Micron Technology, Inc. Topography based patterning
JP5340530B2 (ja) * 2006-09-01 2013-11-13 リンテック株式会社 ミクロ相分離構造物の製造方法
US7863376B2 (en) 2007-03-13 2011-01-04 The United States Of America As Represented By The Secretary Of The Army Thermally controlled particulate core migration within polymer matrix
KR101291223B1 (ko) * 2007-08-09 2013-07-31 한국과학기술원 블록 공중합체를 이용한 미세 패턴 형성 방법
US20090086208A1 (en) 2007-09-27 2009-04-02 Massachusetts Institute Of Technology Broad wavelength range tunable photonic materials
JP5125385B2 (ja) * 2007-10-10 2013-01-23 富士通株式会社 検証シナリオ作成プログラム、該プログラムを記録した記録媒体、検証シナリオ作成装置、および検証シナリオ作成方法
KR101355167B1 (ko) * 2007-12-14 2014-01-28 삼성전자주식회사 적어도 세 개의 고분자 블록을 구비하는 블록 공중합체를이용한 미세 패턴 형성 방법
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
JP5233789B2 (ja) * 2008-03-26 2013-07-10 大日本印刷株式会社 パターン形成方法
US8450043B2 (en) * 2010-09-30 2013-05-28 International Business Machines Corporation Patterning nano-scale patterns on a film comprising unzipping copolymers
US8323870B2 (en) * 2010-11-01 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method and photoresist with zipper mechanism

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090233236A1 (en) 2008-03-17 2009-09-17 International Business Machines Corporation Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom
WO2009151834A2 (en) 2008-05-08 2009-12-17 The Regents Of The University Of California Supramolecular block copolymer compositions for sub-micron lithography

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SCIENCE Z VOL. 276 Z 30 MAY 1997
SOFT MATTER, 2009, 5, 2513-2533

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WO2011151109A1 (en) 2011-12-08
JP2013534542A (ja) 2013-09-05
CN102933628A (zh) 2013-02-13
US20130078574A1 (en) 2013-03-28
US8921032B2 (en) 2014-12-30
KR20130110145A (ko) 2013-10-08
NL2006639A (en) 2011-12-06

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