CN102933628A - 可自组装的聚合物和用于平版印刷术的方法 - Google Patents

可自组装的聚合物和用于平版印刷术的方法 Download PDF

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Publication number
CN102933628A
CN102933628A CN2011800270397A CN201180027039A CN102933628A CN 102933628 A CN102933628 A CN 102933628A CN 2011800270397 A CN2011800270397 A CN 2011800270397A CN 201180027039 A CN201180027039 A CN 201180027039A CN 102933628 A CN102933628 A CN 102933628A
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self
polymer
molecular
molecular configuration
monomer
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Chinese (zh)
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E·皮特斯
S·伍伊斯特尔
R·库尔
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ASML Netherlands BV
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ASML Netherlands BV
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
    • C08F297/04—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type polymerising vinyl aromatic monomers and conjugated dienes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Graft Or Block Polymers (AREA)
CN2011800270397A 2010-06-04 2011-04-20 可自组装的聚合物和用于平版印刷术的方法 Pending CN102933628A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35169310P 2010-06-04 2010-06-04
US61/351,693 2010-06-04
PCT/EP2011/056308 WO2011151109A1 (en) 2010-06-04 2011-04-20 Self-assemblable polymer and method for use in lithography

Publications (1)

Publication Number Publication Date
CN102933628A true CN102933628A (zh) 2013-02-13

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Country Status (6)

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US (1) US8921032B2 (https=)
JP (1) JP2013534542A (https=)
KR (1) KR101826774B1 (https=)
CN (1) CN102933628A (https=)
NL (1) NL2006639A (https=)
WO (1) WO2011151109A1 (https=)

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US7989307B2 (en) 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
US9330934B2 (en) * 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9177794B2 (en) * 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US20150337068A1 (en) 2012-02-10 2015-11-26 Karl K Berggren Preparation, purification and use of high-x diblock copolymers
US20150004379A1 (en) 2012-02-10 2015-01-01 E I Du Pont Nemours And Company Preparation, purification and use of high-x diblock copolymers
JP6211007B2 (ja) 2012-02-10 2017-10-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 高度ｘジブロックコポリマーの製造、精製及び使用
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
JP6112314B2 (ja) 2012-07-10 2017-04-12 株式会社ニコン マーク形成方法及びデバイス製造方法
JP5881565B2 (ja) * 2012-09-07 2016-03-09 東京エレクトロン株式会社 基板処理方法、プログラム及びコンピュータ記憶媒体
WO2014124795A1 (en) * 2013-02-14 2014-08-21 Asml Netherlands B.V. Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers
JP6263378B2 (ja) * 2013-02-20 2018-01-17 東京応化工業株式会社 下地剤及びパターン形成方法
TWI672788B (zh) * 2013-03-27 2019-09-21 日商尼康股份有限公司 標記形成方法、標記檢測方法、及元件製造方法
US9385026B2 (en) 2014-05-08 2016-07-05 GlobalFoundries, Inc. Sublithographic Kelvin structure patterned with DSA
JP6530907B2 (ja) * 2014-12-05 2019-06-12 東京応化工業株式会社 下地剤及び相分離構造を含む構造体の製造方法
US9738765B2 (en) * 2015-02-19 2017-08-22 International Business Machines Corporation Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
US9815947B2 (en) 2015-10-30 2017-11-14 E I Du Pont De Nemours And Company Substantially symmetrical 3-arm star block copolymers

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Also Published As

Publication number Publication date
WO2011151109A1 (en) 2011-12-08
JP2013534542A (ja) 2013-09-05
US20130078574A1 (en) 2013-03-28
US8921032B2 (en) 2014-12-30
KR20130110145A (ko) 2013-10-08
NL2006639A (en) 2011-12-06
KR101826774B1 (ko) 2018-02-07

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Application publication date: 20130213