KR101814228B1 - 세라믹 타겟을 사용한 스파크 증착 방법 - Google Patents

세라믹 타겟을 사용한 스파크 증착 방법 Download PDF

Info

Publication number
KR101814228B1
KR101814228B1 KR1020127031710A KR20127031710A KR101814228B1 KR 101814228 B1 KR101814228 B1 KR 101814228B1 KR 1020127031710 A KR1020127031710 A KR 1020127031710A KR 20127031710 A KR20127031710 A KR 20127031710A KR 101814228 B1 KR101814228 B1 KR 101814228B1
Authority
KR
South Korea
Prior art keywords
target plate
target
arc
movement
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127031710A
Other languages
English (en)
Korean (ko)
Other versions
KR20130097644A (ko
Inventor
마르쿠스 레히트하레르
Original Assignee
오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 filed Critical 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘
Publication of KR20130097644A publication Critical patent/KR20130097644A/ko
Application granted granted Critical
Publication of KR101814228B1 publication Critical patent/KR101814228B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020127031710A 2010-05-04 2011-04-13 세라믹 타겟을 사용한 스파크 증착 방법 Expired - Fee Related KR101814228B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33093510P 2010-05-04 2010-05-04
US61/330,935 2010-05-04
PCT/EP2011/001856 WO2011137967A1 (de) 2010-05-04 2011-04-13 Verfahren zum funkenverdampfen mit keramischen targets

Publications (2)

Publication Number Publication Date
KR20130097644A KR20130097644A (ko) 2013-09-03
KR101814228B1 true KR101814228B1 (ko) 2018-01-04

Family

ID=44121711

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127031710A Expired - Fee Related KR101814228B1 (ko) 2010-05-04 2011-04-13 세라믹 타겟을 사용한 스파크 증착 방법

Country Status (7)

Country Link
US (1) US20130220800A1 (cg-RX-API-DMAC10.html)
EP (1) EP2566999B1 (cg-RX-API-DMAC10.html)
JP (1) JP5721813B2 (cg-RX-API-DMAC10.html)
KR (1) KR101814228B1 (cg-RX-API-DMAC10.html)
CN (2) CN106435488A (cg-RX-API-DMAC10.html)
CA (1) CA2798210C (cg-RX-API-DMAC10.html)
WO (1) WO2011137967A1 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019081053A1 (en) * 2017-10-03 2019-05-02 Oerlikon Surface Solutions Ag, Pfäffikon ARC SOURCE
EP3556901B1 (en) * 2018-04-20 2021-03-31 Plansee Composite Materials Gmbh Vacuum arc source
AT16480U1 (de) * 2018-04-20 2019-10-15 Plansee Composite Mat Gmbh Target und Verfahren zur Herstellung eines Targets

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006274280A (ja) * 2005-03-25 2006-10-12 Ferrotec Corp プラズマ生成装置におけるドロップレット除去装置及びドロップレット除去方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4512867A (en) * 1981-11-24 1985-04-23 Andreev Anatoly A Method and apparatus for controlling plasma generation in vapor deposition
DE4017111C2 (de) * 1990-05-28 1998-01-29 Hauzer Holding Lichtbogen-Magnetron-Vorrichtung
JPS6442575A (en) * 1987-08-10 1989-02-14 Kobe Steel Ltd Ceramic target having high melting point for vacuum deposition with arc
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
JPH01263265A (ja) * 1988-04-13 1989-10-19 Kobe Steel Ltd 真空アーク蒸着法
JPH02213463A (ja) * 1989-02-13 1990-08-24 Nippon Sheet Glass Co Ltd 透明導電膜の製造方法
US5271817A (en) * 1992-03-19 1993-12-21 Vlsi Technology, Inc. Design for sputter targets to reduce defects in refractory metal films
DE4301516C2 (de) * 1993-01-21 2003-02-13 Applied Films Gmbh & Co Kg Targetkühlung mit Wanne
DE4329155A1 (de) * 1993-08-30 1995-03-02 Bloesch W Ag Magnetfeldkathode
JP3315302B2 (ja) * 1995-12-18 2002-08-19 株式会社神戸製鋼所 真空アーク蒸着方法
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
JP2002525431A (ja) * 1998-09-14 2002-08-13 ユナキス・トレーディング・アクチェンゲゼルシャフト アーク蒸化室用ターゲット配置
JP3917348B2 (ja) * 1999-05-26 2007-05-23 株式会社神戸製鋼所 アーク蒸発源、真空蒸着装置及び真空蒸着方法
US6495002B1 (en) * 2000-04-07 2002-12-17 Hy-Tech Research Corporation Method and apparatus for depositing ceramic films by vacuum arc deposition
AU2002219978A1 (en) * 2000-11-30 2002-06-11 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
WO2002043466A2 (en) * 2000-11-30 2002-06-06 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
US20020139662A1 (en) * 2001-02-21 2002-10-03 Lee Brent W. Thin-film deposition of low conductivity targets using cathodic ARC plasma process
CH696828A5 (de) * 2003-11-18 2007-12-14 Oerlikon Trading Ag Zündvorrichtung.
CN100419117C (zh) * 2004-02-02 2008-09-17 株式会社神户制钢所 硬质叠层被膜、其制造方法及成膜装置
EP2018653B1 (de) * 2006-05-16 2014-08-06 Oerlikon Trading AG, Trübbach Arcquelle und magnetanordnung
KR101641991B1 (ko) * 2007-04-17 2016-07-29 술저 메타플라스 게엠베하 진공 아크 기화 소스 및 진공 아크 기화 소스를 가진 진공 아크 기화 챔버
SE531749C2 (sv) * 2007-09-17 2009-07-28 Seco Tools Ab Metod att utfälla slitstarka skikt på hårdmetall med bågförångning och katod med Ti3SiC2 som huvudbeståndsdel
JP5344864B2 (ja) * 2008-07-31 2013-11-20 富士フイルム株式会社 成膜装置および成膜方法
AT12021U1 (de) * 2010-04-14 2011-09-15 Plansee Se Beschichtungsquelle und verfahren zu deren herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006274280A (ja) * 2005-03-25 2006-10-12 Ferrotec Corp プラズマ生成装置におけるドロップレット除去装置及びドロップレット除去方法

Also Published As

Publication number Publication date
CN106435488A (zh) 2017-02-22
CA2798210A1 (en) 2011-11-10
EP2566999A1 (de) 2013-03-13
JP5721813B2 (ja) 2015-05-20
CA2798210C (en) 2018-08-21
KR20130097644A (ko) 2013-09-03
US20130220800A1 (en) 2013-08-29
EP2566999B1 (de) 2018-12-12
CN102859027A (zh) 2013-01-02
JP2013525611A (ja) 2013-06-20
WO2011137967A1 (de) 2011-11-10

Similar Documents

Publication Publication Date Title
CN102947478B (zh) 有明确电场的电弧蒸发源
US20020139662A1 (en) Thin-film deposition of low conductivity targets using cathodic ARC plasma process
CA2798210C (en) Method for spark deposition using ceramic targets
CN210974853U (zh) 一种配置热丝的电弧离子镀膜装置
CN108286038B (zh) 冷阴极电弧等离子源及非接触引弧方法
JP6044602B2 (ja) 成膜装置
KR102167854B1 (ko) 영구 자석을 구비하는 아크 증발 코팅 소스
JP2013525611A5 (cg-RX-API-DMAC10.html)
US9773650B2 (en) Method and device for generating an electrical discharge
JP3555033B2 (ja) 負圧又は真空中において材料蒸気によつて基板を被覆する装置
KR101706908B1 (ko) 특히 가스 방전 광원들을 위한 전극 시스템
US20050121321A1 (en) Ignition device
TWI707608B (zh) 真空電弧源
CN108278633B (zh) 用于高压脉冲引弧的非接触点火方法及点火器
US20190172691A1 (en) Heating carrier device for use on sputtering cathode assembly
KR100822313B1 (ko) 고효율 대향 타겟식 스퍼터링 장치
CN100516284C (zh) 蒸镀装置
CN103346242A (zh) 基于玻璃基板的led器件及其制备方法
KR100329632B1 (ko) 음극아크 방전을 이용한 대면적 평판 코팅장치
JP6986674B2 (ja) プラズマスパッタリング成膜装置
JP2592617B2 (ja) イオン・プレーテイング装置
RU2404284C2 (ru) Протяженный электродуговой испаритель токопроводящих материалов
JP5976344B2 (ja) 有機el素子の電極膜形成方法、有機el素子の電極膜形成装置
US10704136B2 (en) Cathodic arc deposition stinger
Anders Cathodic arc sources

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20201227

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20201227