KR101782904B1 - 기판으로부터 템플레이트 분리 중의 응력 감소 - Google Patents

기판으로부터 템플레이트 분리 중의 응력 감소 Download PDF

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KR101782904B1
KR101782904B1 KR1020117010168A KR20117010168A KR101782904B1 KR 101782904 B1 KR101782904 B1 KR 101782904B1 KR 1020117010168 A KR1020117010168 A KR 1020117010168A KR 20117010168 A KR20117010168 A KR 20117010168A KR 101782904 B1 KR101782904 B1 KR 101782904B1
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separation
features
template
dense
length
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KR20110074572A (ko
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프랭크 와이. 수
시들가타 브이. 스레니바산
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캐논 나노테크놀로지즈 인코퍼레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117010168A 2008-10-21 2009-10-20 기판으로부터 템플레이트 분리 중의 응력 감소 Active KR101782904B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10723808P 2008-10-21 2008-10-21
US61/107,238 2008-10-21
US12/581,236 2009-10-19
US12/581,236 US8075299B2 (en) 2008-10-21 2009-10-19 Reduction of stress during template separation
PCT/US2009/005692 WO2010047769A1 (en) 2008-10-21 2009-10-20 Reduction of stress during template separation

Related Child Applications (1)

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KR1020177026771A Division KR101886066B1 (ko) 2008-10-21 2009-10-20 기판으로부터 템플레이트 분리 중의 응력 감소

Publications (2)

Publication Number Publication Date
KR20110074572A KR20110074572A (ko) 2011-06-30
KR101782904B1 true KR101782904B1 (ko) 2017-09-28

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KR1020117010168A Active KR101782904B1 (ko) 2008-10-21 2009-10-20 기판으로부터 템플레이트 분리 중의 응력 감소
KR1020177026771A Active KR101886066B1 (ko) 2008-10-21 2009-10-20 기판으로부터 템플레이트 분리 중의 응력 감소

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KR1020177026771A Active KR101886066B1 (ko) 2008-10-21 2009-10-20 기판으로부터 템플레이트 분리 중의 응력 감소

Country Status (5)

Country Link
US (1) US8075299B2 (enExample)
JP (1) JP5180381B2 (enExample)
KR (2) KR101782904B1 (enExample)
TW (1) TWI402159B (enExample)
WO (1) WO2010047769A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050156353A1 (en) * 2004-01-15 2005-07-21 Watts Michael P. Method to improve the flow rate of imprinting material
US8075299B2 (en) 2008-10-21 2011-12-13 Molecular Imprints, Inc. Reduction of stress during template separation
US8652393B2 (en) * 2008-10-24 2014-02-18 Molecular Imprints, Inc. Strain and kinetics control during separation phase of imprint process
JP4792096B2 (ja) * 2009-03-19 2011-10-12 株式会社東芝 テンプレートパターンの設計方法、テンプレートの製造方法及び半導体装置の製造方法。
JP5499668B2 (ja) * 2009-12-03 2014-05-21 大日本印刷株式会社 インプリント用モールドおよび該モールドを用いたパターン形成方法
JP5238742B2 (ja) * 2010-03-19 2013-07-17 株式会社東芝 加工方法および加工装置
JP5833636B2 (ja) 2010-04-27 2015-12-16 モレキュラー・インプリンツ・インコーポレーテッド ナノインプリント・リソグラフィのテンプレート製作方法およびそのシステム
TW201313428A (zh) * 2011-06-30 2013-04-01 Asahi Chemical Ind 微細凹凸構造轉印用鑄模
KR101910974B1 (ko) * 2011-12-13 2018-10-24 삼성전자주식회사 임프린팅 스탬프 및 이를 이용한 나노 임프린트 방법
JP6083135B2 (ja) * 2012-06-08 2017-02-22 大日本印刷株式会社 ナノインプリント用テンプレート及びそれを用いたパターン形成方法
JP5993230B2 (ja) * 2012-07-03 2016-09-14 株式会社日立ハイテクノロジーズ 微細構造転写装置及び微細構造転写スタンパ
KR20140030382A (ko) 2012-08-27 2014-03-12 삼성디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
JP6155720B2 (ja) * 2013-03-15 2017-07-05 大日本印刷株式会社 ナノインプリント用テンプレートのパターン配置方法、及びナノインプリント用テンプレート
JP6060796B2 (ja) * 2013-04-22 2017-01-18 大日本印刷株式会社 インプリントモールド及びダミーパターン設計方法
WO2019039999A1 (en) * 2017-08-22 2019-02-28 Heptagon Micro Optics Pte. Ltd. REPLICATION ENHANCEMENTS AND RELATED METHODS AND DEVICES, ESPECIALLY FOR MINIMIZING ASYMMETRICAL FORM ERRORS
CN107993956B (zh) * 2017-11-29 2020-07-07 中国电子科技集团公司第十三研究所 线距标准样片的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US20050193364A1 (en) 2001-06-29 2005-09-01 Kabushiki Kaisha Toshiba Pattern forming method and semiconductor device manufactured by using said pattern forming method
US20060192320A1 (en) * 2005-02-28 2006-08-31 Toshinobu Tokita Pattern transferring mold, pattern transferring apparatus and device manufacturing method using the same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
DE20122179U1 (de) 2000-07-17 2004-09-16 Board of Regents, The University of Texas System, Austin Vorrichtung zum automatischen Abgeben von Flüssigkeit für Prägelithographieprozesse
WO2002006902A2 (en) * 2000-07-17 2002-01-24 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
JP3556647B2 (ja) 2001-08-21 2004-08-18 沖電気工業株式会社 半導体素子の製造方法
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040168613A1 (en) 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
KR100495836B1 (ko) * 2003-03-27 2005-06-16 한국기계연구원 다중 양각 요소 스탬프를 이용한 나노임프린트 리소그래피공정
WO2004086471A1 (en) 2003-03-27 2004-10-07 Korea Institute Of Machinery & Materials Uv nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7309225B2 (en) * 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US20060145398A1 (en) 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US7762186B2 (en) * 2005-04-19 2010-07-27 Asml Netherlands B.V. Imprint lithography
US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
JP4987012B2 (ja) 2005-12-08 2012-07-25 モレキュラー・インプリンツ・インコーポレーテッド 基板の両面パターニングする方法及びシステム
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
JP2008091782A (ja) * 2006-10-04 2008-04-17 Toshiba Corp パターン形成用テンプレート、パターン形成方法、及びナノインプリント装置
JP5062521B2 (ja) 2007-02-27 2012-10-31 独立行政法人理化学研究所 レプリカモールドの製造方法およびレプリカモールド
US8075299B2 (en) 2008-10-21 2011-12-13 Molecular Imprints, Inc. Reduction of stress during template separation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050193364A1 (en) 2001-06-29 2005-09-01 Kabushiki Kaisha Toshiba Pattern forming method and semiconductor device manufactured by using said pattern forming method
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US20060192320A1 (en) * 2005-02-28 2006-08-31 Toshinobu Tokita Pattern transferring mold, pattern transferring apparatus and device manufacturing method using the same

Also Published As

Publication number Publication date
WO2010047769A1 (en) 2010-04-29
JP2012506618A (ja) 2012-03-15
TWI402159B (zh) 2013-07-21
KR20110074572A (ko) 2011-06-30
JP5180381B2 (ja) 2013-04-10
US8075299B2 (en) 2011-12-13
KR101886066B1 (ko) 2018-08-07
US20100096776A1 (en) 2010-04-22
WO2010047769A8 (en) 2010-12-09
TW201024074A (en) 2010-07-01
KR20170113688A (ko) 2017-10-12

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