KR101778874B1 - 산화물 반도체 박막 트랜지스터용 기판 - Google Patents

산화물 반도체 박막 트랜지스터용 기판 Download PDF

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KR101778874B1
KR101778874B1 KR1020157027464A KR20157027464A KR101778874B1 KR 101778874 B1 KR101778874 B1 KR 101778874B1 KR 1020157027464 A KR1020157027464 A KR 1020157027464A KR 20157027464 A KR20157027464 A KR 20157027464A KR 101778874 B1 KR101778874 B1 KR 101778874B1
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South Korea
Prior art keywords
substrate
protective insulating
insulating layer
oxide semiconductor
layer
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Korean (ko)
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KR20150129767A (ko
Inventor
마사야 나카야마
후미히코 모치즈키
시게노리 유우야
아츠시 다나카
마사유키 스즈키
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후지필름 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H01L29/78603—
    • H01L29/78606—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13069—Thin film transistor [TFT]

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  • Thin Film Transistor (AREA)
KR1020157027464A 2013-03-08 2014-01-24 산화물 반도체 박막 트랜지스터용 기판 Active KR101778874B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-046827 2013-03-08
JP2013046827A JP5936568B2 (ja) 2013-03-08 2013-03-08 酸化物半導体薄膜トランジスタ用基板およびその基板を用いた半導体装置
PCT/JP2014/000354 WO2014136375A1 (ja) 2013-03-08 2014-01-24 酸化物半導体薄膜トランジスタ用基板

Publications (2)

Publication Number Publication Date
KR20150129767A KR20150129767A (ko) 2015-11-20
KR101778874B1 true KR101778874B1 (ko) 2017-09-14

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KR1020157027464A Active KR101778874B1 (ko) 2013-03-08 2014-01-24 산화물 반도체 박막 트랜지스터용 기판

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JP (1) JP5936568B2 (cg-RX-API-DMAC7.html)
KR (1) KR101778874B1 (cg-RX-API-DMAC7.html)
WO (1) WO2014136375A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI809075B (zh) * 2018-03-30 2023-07-21 美商非結晶公司 電子裝置及具有其之顯示器
KR102299087B1 (ko) 2019-08-09 2021-09-08 김 철 환 광섬유사가 내장되어서 발광하는 혈관 및 피하용 카테터
CN112114460B (zh) * 2020-09-23 2022-12-23 北海惠科光电技术有限公司 基于阵列基板的绝缘单元及其制备方法、阵列基板及其制备方法、显示机构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196851A (ja) 2004-12-16 2006-07-27 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法
JP2011159807A (ja) 2010-02-01 2011-08-18 Fujifilm Corp 絶縁性金属基板および半導体装置
JP2012094757A (ja) 2010-10-28 2012-05-17 Fujifilm Corp 薄膜トランジスタおよびその製造方法
JP2012530033A (ja) 2009-06-16 2012-11-29 ビーエーエスエフ ソシエタス・ヨーロピア 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5394867B2 (ja) * 2009-09-17 2014-01-22 富士フイルム株式会社 ガスバリア膜およびガスバリアフィルム
JP5473885B2 (ja) * 2010-02-08 2014-04-16 富士フイルム株式会社 絶縁層付金属基板およびその製造方法、半導体装置およびその製造方法ならびに太陽電池およびその製造方法
JP2011249674A (ja) * 2010-05-28 2011-12-08 Fujifilm Corp 薄膜トランジスタおよびその製造方法
JP2013044000A (ja) * 2011-08-22 2013-03-04 Fujifilm Corp 絶縁層付金属基板およびその製造方法、半導体装置およびその製造方法、太陽電池およびその製造方法、電子回路およびその製造方法、ならびに発光素子およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196851A (ja) 2004-12-16 2006-07-27 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法
JP2012530033A (ja) 2009-06-16 2012-11-29 ビーエーエスエフ ソシエタス・ヨーロピア 半導体金属酸化物粒子層において粒子間接触部分を改善するため及び間隙を埋めるための熱的に化学変化の起こり易い前駆体化合物
JP2011159807A (ja) 2010-02-01 2011-08-18 Fujifilm Corp 絶縁性金属基板および半導体装置
JP2012094757A (ja) 2010-10-28 2012-05-17 Fujifilm Corp 薄膜トランジスタおよびその製造方法

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JP2014175464A (ja) 2014-09-22
WO2014136375A1 (ja) 2014-09-12
KR20150129767A (ko) 2015-11-20
JP5936568B2 (ja) 2016-06-22

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