KR101776048B1 - 감활성광선성 또는 감방사선성 수지 조성물, 그것을 사용한 레지스트 막, 패턴형성방법, 전자 디바이스의 제조방법, 및 전자 디바이스 - Google Patents
감활성광선성 또는 감방사선성 수지 조성물, 그것을 사용한 레지스트 막, 패턴형성방법, 전자 디바이스의 제조방법, 및 전자 디바이스 Download PDFInfo
- Publication number
- KR101776048B1 KR101776048B1 KR1020157002291A KR20157002291A KR101776048B1 KR 101776048 B1 KR101776048 B1 KR 101776048B1 KR 1020157002291 A KR1020157002291 A KR 1020157002291A KR 20157002291 A KR20157002291 A KR 20157002291A KR 101776048 B1 KR101776048 B1 KR 101776048B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- general formula
- repeating unit
- alkyl group
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 0 C*1=CCCC1 Chemical compound C*1=CCCC1 0.000 description 39
- JOXIMZWYDAKGHI-UHFFFAOYSA-N Cc(cc1)ccc1S(O)(=O)=O Chemical compound Cc(cc1)ccc1S(O)(=O)=O JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- SNTGGEPNKMJCLX-UHFFFAOYSA-N Cc(cc1)ccc1S(c1ccccc1)c1ccccc1 Chemical compound Cc(cc1)ccc1S(c1ccccc1)c1ccccc1 SNTGGEPNKMJCLX-UHFFFAOYSA-N 0.000 description 2
- RMVRSNDYEFQCLF-UHFFFAOYSA-N Sc1ccccc1 Chemical compound Sc1ccccc1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 2
- DZVQRSNOQPNGAI-UHFFFAOYSA-N C(CC1)CC=C1S(c1ccccc1)c1ccccc1 Chemical compound C(CC1)CC=C1S(c1ccccc1)c1ccccc1 DZVQRSNOQPNGAI-UHFFFAOYSA-N 0.000 description 1
- HIZMGOVNGQDSBS-LAIXOYJHSA-N C/N=C\N=C/C(C(O)=O)=C Chemical compound C/N=C\N=C/C(C(O)=O)=C HIZMGOVNGQDSBS-LAIXOYJHSA-N 0.000 description 1
- YTZKOQUCBOVLHL-UHFFFAOYSA-N CC(C)(C)c1ccccc1 Chemical compound CC(C)(C)c1ccccc1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 1
- HPAFEYYKCQAMJQ-UHFFFAOYSA-N CC(C)(c(cc1)cc(OC)c1[I](C)C)S Chemical compound CC(C)(c(cc1)cc(OC)c1[I](C)C)S HPAFEYYKCQAMJQ-UHFFFAOYSA-N 0.000 description 1
- UIVHSAPUKNIOGM-UHFFFAOYSA-N CC(C)(c(cc1)ccc1OCCOC)S Chemical compound CC(C)(c(cc1)ccc1OCCOC)S UIVHSAPUKNIOGM-UHFFFAOYSA-N 0.000 description 1
- WBDRVMIJNFZLMN-UHFFFAOYSA-O CC(C)(c1ccccc1)[SH2+] Chemical compound CC(C)(c1ccccc1)[SH2+] WBDRVMIJNFZLMN-UHFFFAOYSA-O 0.000 description 1
- VQLMHCLBQSRFRD-ONNFQVAWSA-N CCCCCCC/N=C/C Chemical compound CCCCCCC/N=C/C VQLMHCLBQSRFRD-ONNFQVAWSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Cc1ccccc1 Chemical compound Cc1ccccc1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- RELJVMGAGZHNAP-UHFFFAOYSA-N OCCc(cc1)ccc1S1c(cccc2)c2-c2c1cccc2 Chemical compound OCCc(cc1)ccc1S1c(cccc2)c2-c2c1cccc2 RELJVMGAGZHNAP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/16—Halogens
- C08F12/20—Fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/22—Oxygen
- C08F12/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/30—Sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/16—Halogens
- C08F212/20—Fluorine
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/30—Sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
- C09D125/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Emergency Medicine (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012167814 | 2012-07-27 | ||
| JPJP-P-2012-167814 | 2012-07-27 | ||
| JP2013054400A JP5850873B2 (ja) | 2012-07-27 | 2013-03-15 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| JPJP-P-2013-054400 | 2013-03-15 | ||
| PCT/JP2013/070833 WO2014017667A1 (en) | 2012-07-27 | 2013-07-25 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150028328A KR20150028328A (ko) | 2015-03-13 |
| KR101776048B1 true KR101776048B1 (ko) | 2017-09-07 |
Family
ID=49997469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157002291A Active KR101776048B1 (ko) | 2012-07-27 | 2013-07-25 | 감활성광선성 또는 감방사선성 수지 조성물, 그것을 사용한 레지스트 막, 패턴형성방법, 전자 디바이스의 제조방법, 및 전자 디바이스 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9551933B2 (enExample) |
| JP (1) | JP5850873B2 (enExample) |
| KR (1) | KR101776048B1 (enExample) |
| TW (1) | TWI587086B (enExample) |
| WO (1) | WO2014017667A1 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4554665B2 (ja) * | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
| JP5830493B2 (ja) * | 2012-06-27 | 2015-12-09 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いた感活性光線性又は感放射線性膜、パターン形成方法及び半導体デバイスの製造方法 |
| JP5873826B2 (ja) * | 2012-07-27 | 2016-03-01 | 富士フイルム株式会社 | パターン形成方法、及び電子デバイスの製造方法 |
| JP5850873B2 (ja) * | 2012-07-27 | 2016-02-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| KR101869312B1 (ko) * | 2014-07-31 | 2018-06-20 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 레지스트 패턴, 전자 디바이스의 제조 방법, 및 전자 디바이스 |
| TWI561920B (en) * | 2014-12-22 | 2016-12-11 | Chi Mei Corp | Photosensitive polysiloxane composition, protecting film, and element having the protecting film |
| KR102432661B1 (ko) * | 2015-07-07 | 2022-08-17 | 삼성전자주식회사 | 극자외선용 포토레지스트 조성물 및 이를 이용하는 포토레지스트 패턴의 형성 방법 |
| US9815930B2 (en) * | 2015-08-07 | 2017-11-14 | Rohm And Haas Electronic Materials Llc | Block copolymer and associated photoresist composition and method of forming an electronic device |
| US9957339B2 (en) | 2015-08-07 | 2018-05-01 | Rohm And Haas Electronic Materials Llc | Copolymer and associated layered article, and device-forming method |
| JP7000716B2 (ja) * | 2016-09-02 | 2022-02-10 | Jsr株式会社 | 組成物、硬化膜および有機el・液晶表示素子 |
| EP3521926B1 (en) | 2016-09-29 | 2021-04-21 | FUJIFILM Corporation | Active light sensitive or radiation sensitive resin composition, pattern forming method and method for producing electronic device |
| JP7002537B2 (ja) | 2017-04-21 | 2022-01-20 | 富士フイルム株式会社 | Euv光用感光性組成物、パターン形成方法、電子デバイスの製造方法 |
| EP3783434A4 (en) | 2018-04-20 | 2021-06-23 | FUJIFILM Corporation | LIGHT SENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN GENERATION METHOD, AND METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE |
| WO2020049963A1 (ja) | 2018-09-07 | 2020-03-12 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| WO2020105505A1 (ja) | 2018-11-22 | 2020-05-28 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP7412186B2 (ja) | 2019-01-18 | 2024-01-12 | 住友化学株式会社 | 樹脂、レジスト組成物及びレジストパターンの製造方法 |
| JP7471828B2 (ja) | 2019-01-18 | 2024-04-22 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| KR102580569B1 (ko) | 2019-01-28 | 2023-09-20 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| CN113168098B (zh) | 2019-01-28 | 2024-03-29 | 富士胶片株式会社 | 感光化射线性或感辐射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法 |
| JP7232847B2 (ja) | 2019-01-28 | 2023-03-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| EP3950744B1 (en) | 2019-03-29 | 2023-10-18 | FUJIFILM Corporation | Photosensitive composition for euv light, method for pattern formation, and method for producing electronic device |
| TWI836094B (zh) | 2019-06-21 | 2024-03-21 | 日商富士軟片股份有限公司 | 感光化射線性或感放射線性樹脂組合物、光阻膜、圖案形成方法、電子裝置之製造方法 |
| EP3992179A4 (en) | 2019-06-28 | 2022-11-02 | FUJIFILM Corporation | METHOD FOR PRODUCING RESIN COMPOSITION SENSITIVE TO ACTIVE LIGHT OR ACTIVE RADIATION, METHOD FOR PATTERN FORMING AND METHOD FOR PRODUCING ELECTRONIC DEVICE |
| CN113993843A (zh) | 2019-06-28 | 2022-01-28 | 富士胶片株式会社 | 感光化射线性或感放射线性树脂组合物、图案形成方法、抗蚀剂膜及电子器件的制造方法 |
| CN114728306B (zh) * | 2019-11-14 | 2024-06-14 | 共荣社化学株式会社 | 热固性树脂组合物、固化膜、多层涂膜的形成方法、酯化合物以及聚合物 |
| IL293565A (en) | 2019-12-09 | 2022-08-01 | Fujifilm Corp | Treatment liquid and pattern forming method |
| IL296766A (en) | 2020-03-30 | 2022-11-01 | Fujifilm Corp | Actinic beam-sensitive or radiation-sensitive resin composition, method for creating a pattern, resistant layer and method for manufacturing an electronic device |
| KR20220146536A (ko) | 2020-03-31 | 2022-11-01 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| JP7343694B2 (ja) | 2020-03-31 | 2023-09-12 | 富士フイルム株式会社 | レジスト組成物の製造方法、パターン形成方法 |
| TWI772001B (zh) | 2020-04-30 | 2022-07-21 | 台灣積體電路製造股份有限公司 | 樹脂、光阻組成物和半導體裝置的製造方法 |
| US12085855B2 (en) * | 2020-04-30 | 2024-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resin, photoresist composition, and method of manufacturing semiconductor device |
| WO2021241086A1 (ja) | 2020-05-29 | 2021-12-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、レジスト膜、電子デバイスの製造方法、化合物、化合物の製造方法 |
| WO2021251086A1 (ja) | 2020-06-10 | 2021-12-16 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、化合物 |
| JP7318129B2 (ja) | 2020-06-10 | 2023-07-31 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP7637598B2 (ja) * | 2020-09-03 | 2025-02-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
| KR20250029997A (ko) | 2021-01-22 | 2025-03-05 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| EP4317204A4 (en) | 2021-03-31 | 2024-10-16 | FUJIFILM Corporation | Manufacturing method for polymer having thiocarbonylthio group removed |
| KR20230133376A (ko) | 2021-03-31 | 2023-09-19 | 후지필름 가부시키가이샤 | 가역적 부가-개열 연쇄 이동 중합 폴리머의 제조 방법 |
| KR102890029B1 (ko) | 2021-04-16 | 2025-11-26 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 및 화합물 |
| JPWO2023026969A1 (enExample) | 2021-08-25 | 2023-03-02 | ||
| JPWO2023106171A1 (enExample) | 2021-12-10 | 2023-06-15 | ||
| WO2023120250A1 (ja) | 2021-12-23 | 2023-06-29 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、及び化合物 |
| EP4481493A4 (en) | 2022-02-16 | 2025-09-03 | Fujifilm Corp | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE PRODUCTION METHOD, AND COMPOUND |
| JPWO2023162565A1 (enExample) | 2022-02-25 | 2023-08-31 | ||
| WO2024143131A1 (ja) | 2022-12-27 | 2024-07-04 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、及びオニウム塩 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011209692A (ja) * | 2010-03-11 | 2011-10-20 | Fujifilm Corp | ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、液晶表示装置、及び、有機el表示装置 |
| JP2012108182A (ja) * | 2010-11-15 | 2012-06-07 | Shin Etsu Chem Co Ltd | パターン形成方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08101507A (ja) | 1994-09-30 | 1996-04-16 | Japan Synthetic Rubber Co Ltd | 感放射線性樹脂組成物 |
| US6090526A (en) * | 1996-09-13 | 2000-07-18 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
| TWI289238B (en) * | 2000-01-13 | 2007-11-01 | Fujifilm Corp | Negative resist compositions using for electronic irradiation |
| JP3844069B2 (ja) * | 2002-07-04 | 2006-11-08 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP4222850B2 (ja) * | 2003-02-10 | 2009-02-12 | Spansion Japan株式会社 | 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法 |
| KR100714811B1 (ko) * | 2003-03-10 | 2007-05-04 | 미쓰이 가가쿠 가부시키가이샤 | 산감응성 공중합체 및 그 용도 |
| KR20060068798A (ko) * | 2004-12-17 | 2006-06-21 | 삼성전자주식회사 | 감광성 폴리머, 이를 포함하는 포토레지스트 조성물 및이를 이용한 포토레지스트 패턴 형성 방법 |
| JP4719542B2 (ja) * | 2005-09-21 | 2011-07-06 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP5557550B2 (ja) * | 2009-02-20 | 2014-07-23 | 富士フイルム株式会社 | 電子線又はeuv光を用いた有機溶剤系現像又は多重現像パターン形成方法 |
| US8865389B2 (en) * | 2010-09-28 | 2014-10-21 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern |
| JP5292377B2 (ja) * | 2010-10-05 | 2013-09-18 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いた感活性光線性又は感放射線性膜及びパターン形成方法 |
| JP5856991B2 (ja) * | 2012-05-21 | 2016-02-10 | 富士フイルム株式会社 | 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法 |
| JP5894953B2 (ja) * | 2012-07-27 | 2016-03-30 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| JP5965855B2 (ja) * | 2012-07-27 | 2016-08-10 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法、並びに樹脂 |
| JP5873826B2 (ja) * | 2012-07-27 | 2016-03-01 | 富士フイルム株式会社 | パターン形成方法、及び電子デバイスの製造方法 |
| JP5850873B2 (ja) * | 2012-07-27 | 2016-02-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
-
2013
- 2013-03-15 JP JP2013054400A patent/JP5850873B2/ja active Active
- 2013-07-25 KR KR1020157002291A patent/KR101776048B1/ko active Active
- 2013-07-25 WO PCT/JP2013/070833 patent/WO2014017667A1/en not_active Ceased
- 2013-07-26 TW TW102126777A patent/TWI587086B/zh active
-
2015
- 2015-01-26 US US14/605,631 patent/US9551933B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011209692A (ja) * | 2010-03-11 | 2011-10-20 | Fujifilm Corp | ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、液晶表示装置、及び、有機el表示装置 |
| JP2012108182A (ja) * | 2010-11-15 | 2012-06-07 | Shin Etsu Chem Co Ltd | パターン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201413375A (zh) | 2014-04-01 |
| TWI587086B (zh) | 2017-06-11 |
| JP5850873B2 (ja) | 2016-02-03 |
| US20150140484A1 (en) | 2015-05-21 |
| US9551933B2 (en) | 2017-01-24 |
| JP2014041327A (ja) | 2014-03-06 |
| WO2014017667A1 (en) | 2014-01-30 |
| KR20150028328A (ko) | 2015-03-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101776048B1 (ko) | 감활성광선성 또는 감방사선성 수지 조성물, 그것을 사용한 레지스트 막, 패턴형성방법, 전자 디바이스의 제조방법, 및 전자 디바이스 | |
| JP5873826B2 (ja) | パターン形成方法、及び電子デバイスの製造方法 | |
| JP5836299B2 (ja) | パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びに、これらを用いた電子デバイスの製造方法 | |
| KR101715670B1 (ko) | 감활성광선성 또는 감방사선성 수지 조성물, 이를 이용한 레지스트 필름, 패턴 형성 방법, 전자 디바이스의 제조 방법 및 전자 디바이스 | |
| JP6163438B2 (ja) | パターン形成方法、電子デバイスの製造方法、及び、電子デバイス、並びに、感活性光線性又は感放射線性樹脂組成物、及び、レジスト膜 | |
| JP5909580B2 (ja) | パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及び、レジスト膜、並びに、これらを用いた電子デバイスの製造方法 | |
| KR101730488B1 (ko) | 감활성광선성 또는 감방사선성 수지 조성물, 그것을 사용한 레지스트 막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 전자 디바이스, 및 수지 | |
| CN105122138B (zh) | 图案形成方法、树脂组合物、抗蚀剂膜、电子元件的制造方法及电子元件 | |
| JP6209307B2 (ja) | パターン形成方法、及びこれを用いた電子デバイスの製造方法 | |
| JP5719788B2 (ja) | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、及びレジスト膜、並びにこれらを用いた電子デバイスの製造方法、及び電子デバイス | |
| JP6209344B2 (ja) | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、これらを用いた電子デバイスの製造方法 | |
| KR101754846B1 (ko) | 패턴 형성 방법, 조성물 키트, 레지스트막, 및 이것들을 이용한 전자 디바이스의 제조 방법과 전자 디바이스 | |
| JPWO2016136481A1 (ja) | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、これらを用いた電子デバイスの製造方法、及び、電子デバイス | |
| JP6476276B2 (ja) | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、及び電子デバイスの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E90F | Notification of reason for final refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |