KR101768761B1 - 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법 - Google Patents

고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법 Download PDF

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KR101768761B1
KR101768761B1 KR1020150023092A KR20150023092A KR101768761B1 KR 101768761 B1 KR101768761 B1 KR 101768761B1 KR 1020150023092 A KR1020150023092 A KR 1020150023092A KR 20150023092 A KR20150023092 A KR 20150023092A KR 101768761 B1 KR101768761 B1 KR 101768761B1
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KR
South Korea
Prior art keywords
electrode
plasma processing
humidity
accommodating portion
frequency power
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KR1020150023092A
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English (en)
Korean (ko)
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KR20150101928A (ko
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도시히로 도조
가즈오 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20150101928A publication Critical patent/KR20150101928A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
KR1020150023092A 2014-02-27 2015-02-16 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법 KR101768761B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-036767 2014-02-27
JP2014036767A JP6317138B2 (ja) 2014-02-27 2014-02-27 高周波プラズマ処理装置および高周波プラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20150101928A KR20150101928A (ko) 2015-09-04
KR101768761B1 true KR101768761B1 (ko) 2017-08-17

Family

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KR1020150023092A KR101768761B1 (ko) 2014-02-27 2015-02-16 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법

Country Status (4)

Country Link
JP (1) JP6317138B2 (zh)
KR (1) KR101768761B1 (zh)
CN (1) CN104882376B (zh)
TW (1) TWI670747B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6757267B2 (ja) * 2017-01-26 2020-09-16 アズビル株式会社 ガス処理装置
KR102435888B1 (ko) * 2017-07-04 2022-08-25 삼성전자주식회사 정전 척, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
JP6999368B2 (ja) * 2017-11-01 2022-01-18 東京エレクトロン株式会社 プラズマ処理装置
KR102326020B1 (ko) * 2020-02-20 2021-11-16 세메스 주식회사 플라즈마 애싱 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277487A (ja) 1999-03-23 2000-10-06 Sanyo Electric Co Ltd ドライエッチング装置
JP5371785B2 (ja) 2007-03-01 2013-12-18 アプライド マテリアルズ インコーポレイテッド Ｒｆシャッター

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3150027B2 (ja) * 1993-12-17 2001-03-26 東京エレクトロン株式会社 プラズマ発生装置及びこのプラズマ発生装置を用いたプラズマ処理装置
TW293983B (zh) * 1993-12-17 1996-12-21 Tokyo Electron Co Ltd
JP3015268B2 (ja) * 1994-12-27 2000-03-06 オーニット株式会社 低温プラズマ発生体
JP3153768B2 (ja) * 1995-08-17 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置
KR100290813B1 (ko) * 1995-08-17 2001-06-01 히가시 데쓰로 플라스마 처리장치
JP4668364B2 (ja) * 1997-10-16 2011-04-13 東京エレクトロン株式会社 プラズマ処理装置
JP4017274B2 (ja) * 1999-01-07 2007-12-05 松下電器産業株式会社 プラズマ処理方法及び装置
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP4961948B2 (ja) * 2006-10-27 2012-06-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法並びに記憶媒体
JP2009087992A (ja) * 2007-09-27 2009-04-23 Hitachi High-Technologies Corp プラズマ処理装置
JP5940239B2 (ja) * 2009-11-02 2016-06-29 株式会社イー・スクエア プラズマ表面処理装置およびその製造方法
JP5723195B2 (ja) * 2011-03-31 2015-05-27 アズビル株式会社 ガス処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277487A (ja) 1999-03-23 2000-10-06 Sanyo Electric Co Ltd ドライエッチング装置
JP5371785B2 (ja) 2007-03-01 2013-12-18 アプライド マテリアルズ インコーポレイテッド Ｒｆシャッター

Also Published As

Publication number Publication date
CN104882376A (zh) 2015-09-02
TWI670747B (zh) 2019-09-01
TW201543530A (zh) 2015-11-16
JP2015162570A (ja) 2015-09-07
CN104882376B (zh) 2018-11-09
KR20150101928A (ko) 2015-09-04
JP6317138B2 (ja) 2018-04-25

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