KR101768761B1 - 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법 - Google Patents

고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법 Download PDF

Info

Publication number
KR101768761B1
KR101768761B1 KR1020150023092A KR20150023092A KR101768761B1 KR 101768761 B1 KR101768761 B1 KR 101768761B1 KR 1020150023092 A KR1020150023092 A KR 1020150023092A KR 20150023092 A KR20150023092 A KR 20150023092A KR 101768761 B1 KR101768761 B1 KR 101768761B1
Authority
KR
South Korea
Prior art keywords
electrode
plasma processing
humidity
accommodating portion
frequency power
Prior art date
Application number
KR1020150023092A
Other languages
English (en)
Korean (ko)
Other versions
KR20150101928A (ko
Inventor
도시히로 도조
가즈오 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20150101928A publication Critical patent/KR20150101928A/ko
Application granted granted Critical
Publication of KR101768761B1 publication Critical patent/KR101768761B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
KR1020150023092A 2014-02-27 2015-02-16 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법 KR101768761B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014036767A JP6317138B2 (ja) 2014-02-27 2014-02-27 高周波プラズマ処理装置および高周波プラズマ処理方法
JPJP-P-2014-036767 2014-02-27

Publications (2)

Publication Number Publication Date
KR20150101928A KR20150101928A (ko) 2015-09-04
KR101768761B1 true KR101768761B1 (ko) 2017-08-17

Family

ID=53949821

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150023092A KR101768761B1 (ko) 2014-02-27 2015-02-16 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법

Country Status (4)

Country Link
JP (1) JP6317138B2 (zh)
KR (1) KR101768761B1 (zh)
CN (1) CN104882376B (zh)
TW (1) TWI670747B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6757267B2 (ja) * 2017-01-26 2020-09-16 アズビル株式会社 ガス処理装置
KR102435888B1 (ko) * 2017-07-04 2022-08-25 삼성전자주식회사 정전 척, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법
JP6999368B2 (ja) * 2017-11-01 2022-01-18 東京エレクトロン株式会社 プラズマ処理装置
KR102326020B1 (ko) * 2020-02-20 2021-11-16 세메스 주식회사 플라즈마 애싱 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277487A (ja) 1999-03-23 2000-10-06 Sanyo Electric Co Ltd ドライエッチング装置
JP5371785B2 (ja) 2007-03-01 2013-12-18 アプライド マテリアルズ インコーポレイテッド Ｒｆシャッター

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW296534B (zh) * 1993-12-17 1997-01-21 Tokyo Electron Co Ltd
JP3150027B2 (ja) * 1993-12-17 2001-03-26 東京エレクトロン株式会社 プラズマ発生装置及びこのプラズマ発生装置を用いたプラズマ処理装置
JP3015268B2 (ja) * 1994-12-27 2000-03-06 オーニット株式会社 低温プラズマ発生体
KR100290813B1 (ko) * 1995-08-17 2001-06-01 히가시 데쓰로 플라스마 처리장치
JP3153768B2 (ja) * 1995-08-17 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置
JP4668364B2 (ja) * 1997-10-16 2011-04-13 東京エレクトロン株式会社 プラズマ処理装置
JP4017274B2 (ja) * 1999-01-07 2007-12-05 松下電器産業株式会社 プラズマ処理方法及び装置
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP4961948B2 (ja) * 2006-10-27 2012-06-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法並びに記憶媒体
JP2009087992A (ja) * 2007-09-27 2009-04-23 Hitachi High-Technologies Corp プラズマ処理装置
JP5940239B2 (ja) * 2009-11-02 2016-06-29 株式会社イー・スクエア プラズマ表面処理装置およびその製造方法
JP5723195B2 (ja) * 2011-03-31 2015-05-27 アズビル株式会社 ガス処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277487A (ja) 1999-03-23 2000-10-06 Sanyo Electric Co Ltd ドライエッチング装置
JP5371785B2 (ja) 2007-03-01 2013-12-18 アプライド マテリアルズ インコーポレイテッド Ｒｆシャッター

Also Published As

Publication number Publication date
JP2015162570A (ja) 2015-09-07
KR20150101928A (ko) 2015-09-04
JP6317138B2 (ja) 2018-04-25
TWI670747B (zh) 2019-09-01
CN104882376B (zh) 2018-11-09
CN104882376A (zh) 2015-09-02
TW201543530A (zh) 2015-11-16

Similar Documents

Publication Publication Date Title
JP5317424B2 (ja) プラズマ処理装置
KR101891445B1 (ko) 플라즈마 처리 장치 및 그것에 이용하는 배기 구조
US8597463B2 (en) Inductively coupled plasma processing apparatus
US7815740B2 (en) Substrate mounting table, substrate processing apparatus and substrate processing method
JP6655310B2 (ja) プラズマ処理装置
TWI645066B (zh) 電漿處理裝置
JP6203476B2 (ja) 基板温度制御方法及びプラズマ処理装置
JP2005136350A (ja) 静電吸着装置、プラズマ処理装置及びプラズマ処理方法
CN108091535B (zh) 载置台和等离子体处理装置
KR20150009445A (ko) 유도 결합 플라스마 처리 장치
JP6974088B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR101768761B1 (ko) 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법
KR101898079B1 (ko) 플라즈마 처리 장치
JP2018206975A (ja) プラズマ処理装置及びガスシャワーヘッド
TW202042302A (zh) 電漿處理裝置及電漿處理方法
TW201447963A (zh) 感應耦合電漿處理裝置
TWI600048B (zh) Inductively coupled plasma processing device
JP2019176032A (ja) プラズマ処理装置
JP7018801B2 (ja) プラズマ処理装置、及び被処理体の搬送方法
CN104517797B (zh) 等离子体处理装置
WO2020059596A1 (ja) 載置台及び基板処理装置
US11600475B2 (en) Plasma processing apparatus and control method
JP7458292B2 (ja) プラズマ処理装置
JP2011187637A (ja) 半導体製造装置
TW202233023A (zh) 電漿處理裝置與其製造方法及電漿處理方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant