KR101767291B1 - 연마 방법 - Google Patents

연마 방법 Download PDF

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Publication number
KR101767291B1
KR101767291B1 KR1020130078854A KR20130078854A KR101767291B1 KR 101767291 B1 KR101767291 B1 KR 101767291B1 KR 1020130078854 A KR1020130078854 A KR 1020130078854A KR 20130078854 A KR20130078854 A KR 20130078854A KR 101767291 B1 KR101767291 B1 KR 101767291B1
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South Korea
Prior art keywords
polishing
wafer
film thickness
film
polished
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Korean (ko)
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KR20140007753A (ko
Inventor
다케시 이이즈미
가츠히데 와타나베
요이치 고바야시
Original Assignee
가부시키가이샤 에바라 세이사꾸쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
    • G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020130078854A 2012-07-10 2013-07-05 연마 방법 Active KR101767291B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012154975A JP6046933B2 (ja) 2012-07-10 2012-07-10 研磨方法
JPJP-P-2012-154975 2012-07-10

Publications (2)

Publication Number Publication Date
KR20140007753A KR20140007753A (ko) 2014-01-20
KR101767291B1 true KR101767291B1 (ko) 2017-08-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130078854A Active KR101767291B1 (ko) 2012-07-10 2013-07-05 연마 방법

Country Status (4)

Country Link
US (2) US8951813B2 (cg-RX-API-DMAC10.html)
JP (1) JP6046933B2 (cg-RX-API-DMAC10.html)
KR (1) KR101767291B1 (cg-RX-API-DMAC10.html)
TW (1) TWI567813B (cg-RX-API-DMAC10.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI675721B (zh) * 2013-07-11 2019-11-01 日商荏原製作所股份有限公司 研磨裝置及研磨狀態監視方法
US9997420B2 (en) * 2013-12-27 2018-06-12 Taiwan Semiconductor Manufacturing Company Limited Method and/or system for chemical mechanical planarization (CMP)
JP6293519B2 (ja) * 2014-03-05 2018-03-14 株式会社荏原製作所 研磨装置および研磨方法
JP6266493B2 (ja) 2014-03-20 2018-01-24 株式会社荏原製作所 研磨装置及び研磨方法
JP6370084B2 (ja) * 2014-04-10 2018-08-08 株式会社荏原製作所 基板処理装置
KR102431971B1 (ko) 2014-04-18 2022-08-16 가부시키가이샤 에바라 세이사꾸쇼 기판 처리 장치 및 기판 처리 방법
KR102388170B1 (ko) * 2014-09-02 2022-04-19 가부시키가이샤 에바라 세이사꾸쇼 종점 검출 방법, 연마 장치 및 연마 방법
JP6321579B2 (ja) * 2015-06-01 2018-05-09 株式会社日立国際電気 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム
JP6566897B2 (ja) * 2016-03-17 2019-08-28 東京エレクトロン株式会社 制御装置、基板処理システム、基板処理方法及びプログラム
US11626315B2 (en) * 2016-11-29 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and planarization method thereof
JP7023063B2 (ja) * 2017-08-08 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP6902452B2 (ja) * 2017-10-19 2021-07-14 株式会社荏原製作所 研磨装置
JP7081919B2 (ja) * 2017-12-26 2022-06-07 株式会社ディスコ 加工装置
JP7316785B2 (ja) 2018-12-26 2023-07-28 株式会社荏原製作所 光学式膜厚測定システムの洗浄方法
US11623320B2 (en) 2019-08-21 2023-04-11 Applied Materials, Inc. Polishing head with membrane position control
JP7517832B2 (ja) * 2020-01-17 2024-07-17 株式会社荏原製作所 研磨ヘッドシステムおよび研磨装置
JP7361637B2 (ja) * 2020-03-09 2023-10-16 株式会社荏原製作所 研磨方法、研磨装置、およびプログラムを記録したコンピュータ読み取り可能な記録媒体
JP7503418B2 (ja) * 2020-05-14 2024-06-20 株式会社荏原製作所 膜厚測定装置、研磨装置及び膜厚測定方法
JP7466434B2 (ja) * 2020-11-19 2024-04-12 株式会社荏原製作所 基板処理装置および基板処理方法
WO2022187105A1 (en) 2021-03-05 2022-09-09 Applied Materials, Inc. Control of processing parameters for substrate polishing with substrate precession
CN114000192B (zh) * 2021-10-29 2023-10-13 北京北方华创微电子装备有限公司 半导体工艺设备以及晶圆位置状态的监测方法
JP7680347B2 (ja) * 2021-12-24 2025-05-20 株式会社荏原製作所 膜厚測定方法および膜厚測定装置
JP2024155058A (ja) * 2023-04-20 2024-10-31 株式会社荏原製作所 膜厚測定装置、膜厚測定方法及び基板研磨装置
JP2024158390A (ja) * 2023-04-27 2024-11-08 株式会社荏原製作所 研磨方法、コンピュータを動作させるためのプログラム、および研磨装置
DE102024123115A1 (de) * 2024-08-13 2026-02-19 Thales Deutschland Gmbh Vorrichtung zum Schleifen von Laserdioden, Verfahren zum Schleifen von Laserdioden sowie Steuereinrichtung
CN119897756B (zh) * 2025-04-02 2025-07-11 天通控股股份有限公司 一种提高钽酸锂键合片膜厚均匀性的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203729A (ja) * 2003-12-19 2005-07-28 Ebara Corp 基板研磨装置
JP2012009692A (ja) * 2010-06-25 2012-01-12 Toshiba Corp ドレス方法、研磨方法および研磨装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3218881B2 (ja) * 1994-03-22 2001-10-15 三菱マテリアル株式会社 ウェーハ膜厚測定装置、ウェーハ膜厚測定方法およびウェーハ研磨装置
US5492594A (en) 1994-09-26 1996-02-20 International Business Machines Corp. Chemical-mechanical polishing tool with end point measurement station
JPH08240413A (ja) * 1995-01-06 1996-09-17 Toshiba Corp 膜厚測定装置及びポリシング装置
IL113829A (en) 1995-05-23 2000-12-06 Nova Measuring Instr Ltd Apparatus for optical inspection of wafers during polishing
JP3863624B2 (ja) * 1997-03-24 2006-12-27 不二越機械工業株式会社 ウェーハの研磨装置及びウェーハの研磨方法
US6626736B2 (en) * 2000-06-30 2003-09-30 Ebara Corporation Polishing apparatus
US6447370B1 (en) 2001-04-17 2002-09-10 Speedfam-Ipec Corporation Inline metrology device
US6939198B1 (en) 2001-12-28 2005-09-06 Applied Materials, Inc. Polishing system with in-line and in-situ metrology
JP2004012302A (ja) 2002-06-07 2004-01-15 Hitachi Ltd 膜厚分布計測方法及びその装置
US7118451B2 (en) 2004-02-27 2006-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. CMP apparatus and process sequence method
JP2006231471A (ja) * 2005-02-25 2006-09-07 Speedfam Co Ltd 両面ポリッシュ加工機とその定寸制御方法
JP2010186866A (ja) * 2009-02-12 2010-08-26 Ebara Corp 研磨方法
JP2010087243A (ja) * 2008-09-30 2010-04-15 Panasonic Corp 半導体装置の製造方法
US20110300776A1 (en) 2010-06-03 2011-12-08 Applied Materials, Inc. Tuning of polishing process in multi-carrier head per platen polishing station
US20140141694A1 (en) 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203729A (ja) * 2003-12-19 2005-07-28 Ebara Corp 基板研磨装置
JP2012009692A (ja) * 2010-06-25 2012-01-12 Toshiba Corp ドレス方法、研磨方法および研磨装置

Also Published As

Publication number Publication date
US20150111314A1 (en) 2015-04-23
JP6046933B2 (ja) 2016-12-21
TWI567813B (zh) 2017-01-21
US20140017824A1 (en) 2014-01-16
US8951813B2 (en) 2015-02-10
KR20140007753A (ko) 2014-01-20
TW201403700A (zh) 2014-01-16
JP2014017418A (ja) 2014-01-30

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