KR101755730B1 - 반도체 저장매체에 대한 구성 파라미터를 결정하는 장치, 시스템, 및 방법 - Google Patents

반도체 저장매체에 대한 구성 파라미터를 결정하는 장치, 시스템, 및 방법 Download PDF

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KR101755730B1
KR101755730B1 KR1020120080003A KR20120080003A KR101755730B1 KR 101755730 B1 KR101755730 B1 KR 101755730B1 KR 1020120080003 A KR1020120080003 A KR 1020120080003A KR 20120080003 A KR20120080003 A KR 20120080003A KR 101755730 B1 KR101755730 B1 KR 101755730B1
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South Korea
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module
data
storage
storage medium
storage cell
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KR1020120080003A
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Korean (ko)
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KR20130012062A (ko
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우드 로버트
현 지
선 헤어롱
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샌디스크 테크놀로지스 엘엘씨
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Priority claimed from US13/189,402 external-priority patent/US8380915B2/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
KR1020120080003A 2011-07-22 2012-07-23 반도체 저장매체에 대한 구성 파라미터를 결정하는 장치, 시스템, 및 방법 KR101755730B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/189,402 US8380915B2 (en) 2010-01-27 2011-07-22 Apparatus, system, and method for managing solid-state storage media
US13/189,402 2011-07-22

Related Child Applications (1)

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KR20150026666A Division KR20150030226A (ko) 2011-07-22 2015-02-25 반도체 저장매체에 대한 구성 파라미터를 결정하는 장치, 시스템, 및 방법

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KR20130012062A KR20130012062A (ko) 2013-01-31
KR101755730B1 true KR101755730B1 (ko) 2017-07-07

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KR1020120080003A KR101755730B1 (ko) 2011-07-22 2012-07-23 반도체 저장매체에 대한 구성 파라미터를 결정하는 장치, 시스템, 및 방법
KR20150026666A KR20150030226A (ko) 2011-07-22 2015-02-25 반도체 저장매체에 대한 구성 파라미터를 결정하는 장치, 시스템, 및 방법

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EP (1) EP2549482B1 (zh)
JP (2) JP5789226B2 (zh)
KR (2) KR101755730B1 (zh)
CN (1) CN102890621B (zh)

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JP5789226B2 (ja) 2015-10-07
KR20150030226A (ko) 2015-03-19
KR20130012062A (ko) 2013-01-31
JP2015079495A (ja) 2015-04-23
JP2013025821A (ja) 2013-02-04
EP2549482B1 (en) 2018-05-23
CN102890621B (zh) 2016-06-29
CN102890621A (zh) 2013-01-23
EP2549482A1 (en) 2013-01-23

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