KR101754327B1 - 웨이퍼를 포함하는 층 시스템을 분리하는 방법 - Google Patents

웨이퍼를 포함하는 층 시스템을 분리하는 방법 Download PDF

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Publication number
KR101754327B1
KR101754327B1 KR1020117017391A KR20117017391A KR101754327B1 KR 101754327 B1 KR101754327 B1 KR 101754327B1 KR 1020117017391 A KR1020117017391 A KR 1020117017391A KR 20117017391 A KR20117017391 A KR 20117017391A KR 101754327 B1 KR101754327 B1 KR 101754327B1
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carrier
separating
layer
separation
wafer
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KR20110128174A (ko
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프란츠 리히터
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닛산 가가쿠 고교 가부시키 가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020117017391A 2008-12-23 2009-12-23 웨이퍼를 포함하는 층 시스템을 분리하는 방법 Active KR101754327B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008055155.4 2008-12-23
DE102008055155A DE102008055155A1 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer
EP09151661A EP2202788A3 (de) 2008-12-23 2009-01-29 Trennverfahren für ein Schichtsystem umfassend einen Wafer
EP09151661.7 2009-01-29
PCT/EP2009/067893 WO2010072826A2 (de) 2008-12-23 2009-12-23 Trennverfahren für ein schichtsystem umfassend einen wafer

Publications (2)

Publication Number Publication Date
KR20110128174A KR20110128174A (ko) 2011-11-28
KR101754327B1 true KR101754327B1 (ko) 2017-07-19

Family

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KR1020117017391A Active KR101754327B1 (ko) 2008-12-23 2009-12-23 웨이퍼를 포함하는 층 시스템을 분리하는 방법

Country Status (9)

Country Link
US (1) US8951886B2 (https=)
EP (2) EP2202788A3 (https=)
JP (1) JP5727382B2 (https=)
KR (1) KR101754327B1 (https=)
CN (1) CN102326245B (https=)
DE (1) DE102008055155A1 (https=)
PT (1) PT2382656T (https=)
SG (1) SG172283A1 (https=)
WO (1) WO2010072826A2 (https=)

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KR102075635B1 (ko) 2013-01-03 2020-03-02 삼성전자주식회사 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법
CN103972133B (zh) * 2013-01-25 2017-08-25 旭硝子株式会社 基板的剥离装置和剥离方法以及电子器件的制造方法
JP6180811B2 (ja) * 2013-06-19 2017-08-16 株式会社荏原製作所 基板処理装置
KR20150011072A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법
US10103048B2 (en) * 2013-08-28 2018-10-16 Brewer Science, Inc. Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
US9761474B2 (en) 2013-12-19 2017-09-12 Micron Technology, Inc. Methods for processing semiconductor devices
JP6583639B2 (ja) 2014-06-10 2019-10-02 日産化学株式会社 仮接着剤を用いた積層体
DE102014219095A1 (de) 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
TW201705244A (zh) * 2015-03-04 2017-02-01 康寧公司 用於控制並啓動基材自載體脫結之方法與設備
CN105607311B (zh) * 2016-01-04 2020-06-02 京东方科技集团股份有限公司 起角装置及其使用方法
US10445253B2 (en) * 2016-04-20 2019-10-15 International Business Machines Corporation Cost effective service level agreement data management
EP3477685A4 (en) 2016-06-22 2020-07-01 Nissan Chemical Corporation POLYDIMETHYLSILOXANE ADHESIVE
KR102718731B1 (ko) 2017-05-24 2024-10-18 닛산 가가쿠 가부시키가이샤 에폭시변성 폴리실록산을 함유하는 가접착제
CN110870049B (zh) 2017-07-06 2023-10-03 日产化学株式会社 包含含有苯基的聚硅氧烷的临时粘接剂
US10622326B2 (en) 2017-08-18 2020-04-14 Industrial Technology Research Institute Chip package structure
US10249567B2 (en) 2017-08-18 2019-04-02 Industrial Technology Research Institute Redistribution layer structure of semiconductor package
US10763135B2 (en) 2018-01-30 2020-09-01 Facebook Technologies, Llc Integrated elastomeric interface layer formation and singulation for light emitting diodes
SG11202010863YA (en) 2018-05-01 2020-11-27 Nissan Chemical Corp Polysiloxane-containing temporary adhesive comprising heat-resistant polymerization inhibitor
US10636829B1 (en) 2018-10-24 2020-04-28 Himax Technologies Limited Wafer-level optical structure
US20220002602A1 (en) 2018-11-16 2022-01-06 Nissan Chemical Corporation Adhesive composition for infrared peeling, laminate, method for producing laminate, and peeling method
WO2020100965A1 (ja) 2018-11-16 2020-05-22 日産化学株式会社 積層体の剥離方法、積層体及び積層体の製造方法
WO2020111069A1 (ja) 2018-11-28 2020-06-04 日産化学株式会社 接着剤組成物、積層体及び積層体の製造方法並びに半導体形成基板を薄化する方法
KR20240165439A (ko) 2022-03-24 2024-11-22 닛산 가가쿠 가부시키가이샤 폴리에테르 변성 실록산을 함유하는 접착제
CN115302938B (zh) * 2022-08-25 2023-12-08 中国科学院上海硅酸盐研究所 一种分离胶合组件的方法

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JP2005116679A (ja) * 2003-10-06 2005-04-28 Nitto Denko Corp 半導体ウエハの支持材からの剥離方法およびこれを用いた装置
JP2006032506A (ja) * 2004-07-14 2006-02-02 Taiyo Yuden Co Ltd 半導体ウェハの剥離方法および剥離装置
JP2006319233A (ja) * 2005-05-16 2006-11-24 Lintec Corp 脆質部材の処理装置

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JP2005116679A (ja) * 2003-10-06 2005-04-28 Nitto Denko Corp 半導体ウエハの支持材からの剥離方法およびこれを用いた装置
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Also Published As

Publication number Publication date
JP5727382B2 (ja) 2015-06-03
JP2012513684A (ja) 2012-06-14
SG172283A1 (en) 2011-07-28
US20120028438A1 (en) 2012-02-02
DE102008055155A1 (de) 2010-07-01
PT2382656T (pt) 2019-01-17
EP2202788A2 (de) 2010-06-30
CN102326245B (zh) 2017-04-19
EP2382656A2 (de) 2011-11-02
EP2382656B1 (de) 2018-10-03
WO2010072826A2 (de) 2010-07-01
KR20110128174A (ko) 2011-11-28
CN102326245A (zh) 2012-01-18
EP2202788A3 (de) 2010-08-04
US8951886B2 (en) 2015-02-10
WO2010072826A3 (de) 2010-10-14

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