CN102326245B - 用于包括晶片的层系统的分离方法 - Google Patents

用于包括晶片的层系统的分离方法 Download PDF

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Publication number
CN102326245B
CN102326245B CN200980157334.7A CN200980157334A CN102326245B CN 102326245 B CN102326245 B CN 102326245B CN 200980157334 A CN200980157334 A CN 200980157334A CN 102326245 B CN102326245 B CN 102326245B
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CN
China
Prior art keywords
layer
separation
wafer
carrier
layer system
Prior art date
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Application number
CN200980157334.7A
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English (en)
Chinese (zh)
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CN102326245A (zh
Inventor
弗朗茨·里克特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thin Material Co ltd
Nissan Chemical Corp
Original Assignee
Thin Materials AG
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Publication of CN102326245A publication Critical patent/CN102326245A/zh
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN200980157334.7A 2008-12-23 2009-12-23 用于包括晶片的层系统的分离方法 Active CN102326245B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008055155A DE102008055155A1 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer
DE102008055155.4 2008-12-23
EP09151661.7 2009-01-29
EP09151661A EP2202788A3 (de) 2008-12-23 2009-01-29 Trennverfahren für ein Schichtsystem umfassend einen Wafer
PCT/EP2009/067893 WO2010072826A2 (de) 2008-12-23 2009-12-23 Trennverfahren für ein schichtsystem umfassend einen wafer

Publications (2)

Publication Number Publication Date
CN102326245A CN102326245A (zh) 2012-01-18
CN102326245B true CN102326245B (zh) 2017-04-19

Family

ID=42097506

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980157334.7A Active CN102326245B (zh) 2008-12-23 2009-12-23 用于包括晶片的层系统的分离方法

Country Status (9)

Country Link
US (1) US8951886B2 (https=)
EP (2) EP2202788A3 (https=)
JP (1) JP5727382B2 (https=)
KR (1) KR101754327B1 (https=)
CN (1) CN102326245B (https=)
DE (1) DE102008055155A1 (https=)
PT (1) PT2382656T (https=)
SG (1) SG172283A1 (https=)
WO (1) WO2010072826A2 (https=)

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CN103972133B (zh) * 2013-01-25 2017-08-25 旭硝子株式会社 基板的剥离装置和剥离方法以及电子器件的制造方法
JP6180811B2 (ja) * 2013-06-19 2017-08-16 株式会社荏原製作所 基板処理装置
KR20150011072A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법
US10103048B2 (en) * 2013-08-28 2018-10-16 Brewer Science, Inc. Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
US9761474B2 (en) 2013-12-19 2017-09-12 Micron Technology, Inc. Methods for processing semiconductor devices
US10903106B2 (en) 2014-06-10 2021-01-26 Nissan Chemical Industries, Ltd. Layered body of temporary adhesive
DE102014219095A1 (de) 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
TW201705244A (zh) * 2015-03-04 2017-02-01 康寧公司 用於控制並啓動基材自載體脫結之方法與設備
CN105607311B (zh) * 2016-01-04 2020-06-02 京东方科技集团股份有限公司 起角装置及其使用方法
US10445253B2 (en) * 2016-04-20 2019-10-15 International Business Machines Corporation Cost effective service level agreement data management
US11183415B2 (en) 2016-06-22 2021-11-23 Nissan Chemical Corporation Adhesive containing polydimethyl siloxane
WO2018216732A1 (ja) 2017-05-24 2018-11-29 日産化学株式会社 エポキシ変性ポリシロキサンを含有する仮接着剤
CN110870049B (zh) 2017-07-06 2023-10-03 日产化学株式会社 包含含有苯基的聚硅氧烷的临时粘接剂
US10249567B2 (en) 2017-08-18 2019-04-02 Industrial Technology Research Institute Redistribution layer structure of semiconductor package
US10622326B2 (en) 2017-08-18 2020-04-14 Industrial Technology Research Institute Chip package structure
US10763135B2 (en) 2018-01-30 2020-09-01 Facebook Technologies, Llc Integrated elastomeric interface layer formation and singulation for light emitting diodes
US12559655B2 (en) 2018-05-01 2026-02-24 Nissan Chemical Corporation Polysiloxane-containing temporary adhesive comprising heat-resistant polymerization inhibitor
US10636829B1 (en) 2018-10-24 2020-04-28 Himax Technologies Limited Wafer-level optical structure
KR102869673B1 (ko) 2018-11-16 2025-10-13 닛산 가가쿠 가부시키가이샤 적외선 박리용 접착제 조성물, 적층체, 적층체의 제조 방법 및 박리 방법
EP3882954A4 (en) 2018-11-16 2022-07-27 Nissan Chemical Corporation LAMINATE PEELING METHOD, LAMINATE AND METHOD OF MAKING A LAMINATE
SG11202105574YA (en) 2018-11-28 2021-06-29 Nissan Chemical Corp Adhesive agent composition, layered product and production method for layered product, and method for reducing thickness of semiconductor forming substrate
JPWO2023182138A1 (https=) 2022-03-24 2023-09-28
CN115302938B (zh) * 2022-08-25 2023-12-08 中国科学院上海硅酸盐研究所 一种分离胶合组件的方法

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Also Published As

Publication number Publication date
US8951886B2 (en) 2015-02-10
EP2202788A2 (de) 2010-06-30
KR20110128174A (ko) 2011-11-28
WO2010072826A3 (de) 2010-10-14
JP2012513684A (ja) 2012-06-14
EP2382656A2 (de) 2011-11-02
EP2202788A3 (de) 2010-08-04
PT2382656T (pt) 2019-01-17
SG172283A1 (en) 2011-07-28
JP5727382B2 (ja) 2015-06-03
DE102008055155A1 (de) 2010-07-01
WO2010072826A2 (de) 2010-07-01
KR101754327B1 (ko) 2017-07-19
US20120028438A1 (en) 2012-02-02
CN102326245A (zh) 2012-01-18
EP2382656B1 (de) 2018-10-03

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