JP5727382B2 - ウェーハを含む層システムを分離する方法 - Google Patents

ウェーハを含む層システムを分離する方法 Download PDF

Info

Publication number
JP5727382B2
JP5727382B2 JP2011542832A JP2011542832A JP5727382B2 JP 5727382 B2 JP5727382 B2 JP 5727382B2 JP 2011542832 A JP2011542832 A JP 2011542832A JP 2011542832 A JP2011542832 A JP 2011542832A JP 5727382 B2 JP5727382 B2 JP 5727382B2
Authority
JP
Japan
Prior art keywords
separation
carrier
layer
wafer
layer system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011542832A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012513684A5 (https=
JP2012513684A (ja
Inventor
フランツ リヒター
フランツ リヒター
Original Assignee
シン マテリアルズ アクチェンゲゼルシャフト
シン マテリアルズ アクチェンゲゼルシャフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シン マテリアルズ アクチェンゲゼルシャフト, シン マテリアルズ アクチェンゲゼルシャフト filed Critical シン マテリアルズ アクチェンゲゼルシャフト
Publication of JP2012513684A publication Critical patent/JP2012513684A/ja
Publication of JP2012513684A5 publication Critical patent/JP2012513684A5/ja
Application granted granted Critical
Publication of JP5727382B2 publication Critical patent/JP5727382B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
JP2011542832A 2008-12-23 2009-12-23 ウェーハを含む層システムを分離する方法 Active JP5727382B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008055155A DE102008055155A1 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer
DE102008055155.4 2008-12-23
EP09151661.7 2009-01-29
EP09151661A EP2202788A3 (de) 2008-12-23 2009-01-29 Trennverfahren für ein Schichtsystem umfassend einen Wafer
PCT/EP2009/067893 WO2010072826A2 (de) 2008-12-23 2009-12-23 Trennverfahren für ein schichtsystem umfassend einen wafer

Publications (3)

Publication Number Publication Date
JP2012513684A JP2012513684A (ja) 2012-06-14
JP2012513684A5 JP2012513684A5 (https=) 2015-03-19
JP5727382B2 true JP5727382B2 (ja) 2015-06-03

Family

ID=42097506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011542832A Active JP5727382B2 (ja) 2008-12-23 2009-12-23 ウェーハを含む層システムを分離する方法

Country Status (9)

Country Link
US (1) US8951886B2 (https=)
EP (2) EP2202788A3 (https=)
JP (1) JP5727382B2 (https=)
KR (1) KR101754327B1 (https=)
CN (1) CN102326245B (https=)
DE (1) DE102008055155A1 (https=)
PT (1) PT2382656T (https=)
SG (1) SG172283A1 (https=)
WO (1) WO2010072826A2 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8858756B2 (en) * 2011-10-31 2014-10-14 Masahiro Lee Ultrathin wafer debonding systems
TWI428243B (zh) * 2011-12-23 2014-03-01 Ind Tech Res Inst 可撓式元件的取下方法
US8834662B2 (en) 2012-03-22 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of separating wafer from carrier
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
KR102075635B1 (ko) 2013-01-03 2020-03-02 삼성전자주식회사 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법
CN103972133B (zh) * 2013-01-25 2017-08-25 旭硝子株式会社 基板的剥离装置和剥离方法以及电子器件的制造方法
JP6180811B2 (ja) * 2013-06-19 2017-08-16 株式会社荏原製作所 基板処理装置
KR20150011072A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법
US10103048B2 (en) * 2013-08-28 2018-10-16 Brewer Science, Inc. Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
US9761474B2 (en) 2013-12-19 2017-09-12 Micron Technology, Inc. Methods for processing semiconductor devices
US10903106B2 (en) 2014-06-10 2021-01-26 Nissan Chemical Industries, Ltd. Layered body of temporary adhesive
DE102014219095A1 (de) 2014-09-22 2016-03-24 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
TW201705244A (zh) * 2015-03-04 2017-02-01 康寧公司 用於控制並啓動基材自載體脫結之方法與設備
CN105607311B (zh) * 2016-01-04 2020-06-02 京东方科技集团股份有限公司 起角装置及其使用方法
US10445253B2 (en) * 2016-04-20 2019-10-15 International Business Machines Corporation Cost effective service level agreement data management
US11183415B2 (en) 2016-06-22 2021-11-23 Nissan Chemical Corporation Adhesive containing polydimethyl siloxane
WO2018216732A1 (ja) 2017-05-24 2018-11-29 日産化学株式会社 エポキシ変性ポリシロキサンを含有する仮接着剤
CN110870049B (zh) 2017-07-06 2023-10-03 日产化学株式会社 包含含有苯基的聚硅氧烷的临时粘接剂
US10249567B2 (en) 2017-08-18 2019-04-02 Industrial Technology Research Institute Redistribution layer structure of semiconductor package
US10622326B2 (en) 2017-08-18 2020-04-14 Industrial Technology Research Institute Chip package structure
US10763135B2 (en) 2018-01-30 2020-09-01 Facebook Technologies, Llc Integrated elastomeric interface layer formation and singulation for light emitting diodes
US12559655B2 (en) 2018-05-01 2026-02-24 Nissan Chemical Corporation Polysiloxane-containing temporary adhesive comprising heat-resistant polymerization inhibitor
US10636829B1 (en) 2018-10-24 2020-04-28 Himax Technologies Limited Wafer-level optical structure
KR102869673B1 (ko) 2018-11-16 2025-10-13 닛산 가가쿠 가부시키가이샤 적외선 박리용 접착제 조성물, 적층체, 적층체의 제조 방법 및 박리 방법
EP3882954A4 (en) 2018-11-16 2022-07-27 Nissan Chemical Corporation LAMINATE PEELING METHOD, LAMINATE AND METHOD OF MAKING A LAMINATE
SG11202105574YA (en) 2018-11-28 2021-06-29 Nissan Chemical Corp Adhesive agent composition, layered product and production method for layered product, and method for reducing thickness of semiconductor forming substrate
JPWO2023182138A1 (https=) 2022-03-24 2023-09-28
CN115302938B (zh) * 2022-08-25 2023-12-08 中国科学院上海硅酸盐研究所 一种分离胶合组件的方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252149A (ja) * 1993-02-25 1994-09-09 Nitto Denko Corp バンプ形成用複合フィルムおよびそれを用いた転写バンプ形成方法
JPH06268051A (ja) 1993-03-10 1994-09-22 Mitsubishi Electric Corp ウエハ剥し装置
US6342434B1 (en) * 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
CN1243327A (zh) * 1998-07-27 2000-02-02 佳能株式会社 样品加工装置和方法
JP2001015721A (ja) * 1999-04-30 2001-01-19 Canon Inc 複合部材の分離方法及び薄膜の製造方法
JP2001089291A (ja) * 1999-09-20 2001-04-03 Canon Inc 液相成長法、半導体部材の製造方法、太陽電池の製造方法
DE10128924A1 (de) * 2001-06-15 2003-01-23 Philips Corp Intellectual Pty Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks sowie Vorrichtung zum Durchführen dieses Verfahrens
DE10128923A1 (de) * 2001-06-15 2003-01-23 Philips Corp Intellectual Pty Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks und Vorrichtung zur Durchführung dieses Verfahrens
JP3892703B2 (ja) * 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
JP3948930B2 (ja) * 2001-10-31 2007-07-25 大日本スクリーン製造株式会社 薄膜形成装置および薄膜形成方法
JP4215998B2 (ja) * 2002-04-30 2009-01-28 リンテック株式会社 半導体ウエハの処理方法およびそのための半導体ウエハの転写装置
JP2004063645A (ja) * 2002-07-26 2004-02-26 Enzan Seisakusho:Kk 半導体ウェハの保護部材剥離装置
AU2003299296A1 (en) * 2002-11-29 2004-06-23 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
JP2004300231A (ja) 2003-03-31 2004-10-28 Nitto Denko Corp 熱剥離性両面粘着シート、被着体の加工方法および電子部品
JP4592270B2 (ja) * 2003-10-06 2010-12-01 日東電工株式会社 半導体ウエハの支持材からの剥離方法およびこれを用いた装置
JP2006032506A (ja) * 2004-07-14 2006-02-02 Taiyo Yuden Co Ltd 半導体ウェハの剥離方法および剥離装置
JP2006319233A (ja) * 2005-05-16 2006-11-24 Lintec Corp 脆質部材の処理装置
JP4885483B2 (ja) * 2005-06-06 2012-02-29 リンテック株式会社 転写装置とその方法、剥離装置とその方法、貼付装置とその方法
US8911583B2 (en) * 2006-03-01 2014-12-16 Thin Materials Ag Method for processing, in particular, thin rear sides of a wafer, wafer-carrier arrangement and method for producing said type of wafer-carrier arrangement
JP4970863B2 (ja) * 2006-07-13 2012-07-11 日東電工株式会社 被加工物の加工方法

Also Published As

Publication number Publication date
US8951886B2 (en) 2015-02-10
EP2202788A2 (de) 2010-06-30
KR20110128174A (ko) 2011-11-28
WO2010072826A3 (de) 2010-10-14
JP2012513684A (ja) 2012-06-14
CN102326245B (zh) 2017-04-19
EP2382656A2 (de) 2011-11-02
EP2202788A3 (de) 2010-08-04
PT2382656T (pt) 2019-01-17
SG172283A1 (en) 2011-07-28
DE102008055155A1 (de) 2010-07-01
WO2010072826A2 (de) 2010-07-01
KR101754327B1 (ko) 2017-07-19
US20120028438A1 (en) 2012-02-02
CN102326245A (zh) 2012-01-18
EP2382656B1 (de) 2018-10-03

Similar Documents

Publication Publication Date Title
JP5727382B2 (ja) ウェーハを含む層システムを分離する方法
JP2012513684A5 (https=)
CN103988282B (zh) 对临时键合的半导体晶片去键合
KR100643450B1 (ko) 점착시트, 반도체 웨이퍼의 표면보호 방법 및 워크의가공방법
KR101399690B1 (ko) 접착제 부착 칩의 제조방법
KR101454985B1 (ko) 제작 기판을 캐리어 기판으로부터 분리하기 위한 장치 및 방법
KR102061369B1 (ko) 제품 기판을 캐리어 기판에 임시로 결합하기 위한 방법
CN105632985A (zh) 元件的转移方法
EP2080219A1 (de) Chip-pickup-verfahren und chip-pickup-vorrichtung
EP2080220A1 (de) Fest-einspannungsvorrichtung, chip-pickup-verfahren und chip-pickup-vorrichtung
JP6118404B2 (ja) 電子部材の剥離方法
JP2005116610A (ja) 半導体ウエハの加工方法および半導体ウエハ加工用粘着シート
JP2015505164A (ja) 可撓性の基板保持装置、第１の基板を剥離する装置及び方法
TWI564949B (zh) 塗佈膜之方法，研磨背表面之方法，形成半導體晶片之方法及塗佈膜之裝置
KR20130099853A (ko) 자발 권취성 점착 필름
JP5704602B2 (ja) 薄型半導体装置の製造方法および脆質部材用支持体
JP2005012177A (ja) 貫通構造を有する薄膜化回路基板の製造方法と保護用粘着テープ
EP2791967A1 (en) Method of preparing an adhesive film into a precut semiconductor wafer shape on a dicing tape
JP2013060489A (ja) 部材剥離方法及び部材剥離装置
JP2013058800A (ja) 脆質部材加工用粘着シートおよび脆質部材の処理方法
JP2010056562A (ja) 半導体チップの製造方法
JP5154192B2 (ja) 脆質部材加工用粘着シートおよび脆質部材の処理方法
HK1165092A (en) Method for separating a layer system comprising a wafer
HK1165092B (en) Method for separating a layer system comprising a wafer
CN118946952A (zh) 使用剥离胶带及粘接合材的晶圆的制造方法，以及使用于该方法的剥离胶带及粘接合材

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130919

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131202

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140303

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140310

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140402

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140409

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140501

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140512

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140602

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141029

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20150129

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150309

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150402

R150 Certificate of patent or registration of utility model

Ref document number: 5727382

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250