SG172283A1 - Method for separating a layer system comprising a wafer - Google Patents
Method for separating a layer system comprising a wafer Download PDFInfo
- Publication number
- SG172283A1 SG172283A1 SG2011045168A SG2011045168A SG172283A1 SG 172283 A1 SG172283 A1 SG 172283A1 SG 2011045168 A SG2011045168 A SG 2011045168A SG 2011045168 A SG2011045168 A SG 2011045168A SG 172283 A1 SG172283 A1 SG 172283A1
- Authority
- SG
- Singapore
- Prior art keywords
- carrier
- separating
- wafer
- layer
- layer system
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
- H10P72/7442—Separation by peeling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
- H10P72/7442—Separation by peeling
- H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008055155A DE102008055155A1 (de) | 2008-12-23 | 2008-12-23 | Trennverfahren für ein Schichtsystem umfassend einen Wafer |
| EP09151661A EP2202788A3 (de) | 2008-12-23 | 2009-01-29 | Trennverfahren für ein Schichtsystem umfassend einen Wafer |
| PCT/EP2009/067893 WO2010072826A2 (de) | 2008-12-23 | 2009-12-23 | Trennverfahren für ein schichtsystem umfassend einen wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG172283A1 true SG172283A1 (en) | 2011-07-28 |
Family
ID=42097506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011045168A SG172283A1 (en) | 2008-12-23 | 2009-12-23 | Method for separating a layer system comprising a wafer |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8951886B2 (https=) |
| EP (2) | EP2202788A3 (https=) |
| JP (1) | JP5727382B2 (https=) |
| KR (1) | KR101754327B1 (https=) |
| CN (1) | CN102326245B (https=) |
| DE (1) | DE102008055155A1 (https=) |
| PT (1) | PT2382656T (https=) |
| SG (1) | SG172283A1 (https=) |
| WO (1) | WO2010072826A2 (https=) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8858756B2 (en) * | 2011-10-31 | 2014-10-14 | Masahiro Lee | Ultrathin wafer debonding systems |
| TWI428243B (zh) * | 2011-12-23 | 2014-03-01 | Ind Tech Res Inst | 可撓式元件的取下方法 |
| US8834662B2 (en) | 2012-03-22 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of separating wafer from carrier |
| US9269623B2 (en) | 2012-10-25 | 2016-02-23 | Rohm And Haas Electronic Materials Llc | Ephemeral bonding |
| KR102075635B1 (ko) | 2013-01-03 | 2020-03-02 | 삼성전자주식회사 | 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법 |
| CN103972133B (zh) * | 2013-01-25 | 2017-08-25 | 旭硝子株式会社 | 基板的剥离装置和剥离方法以及电子器件的制造方法 |
| JP6180811B2 (ja) * | 2013-06-19 | 2017-08-16 | 株式会社荏原製作所 | 基板処理装置 |
| KR20150011072A (ko) | 2013-07-22 | 2015-01-30 | 삼성전자주식회사 | 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
| US10103048B2 (en) * | 2013-08-28 | 2018-10-16 | Brewer Science, Inc. | Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates |
| US9315696B2 (en) | 2013-10-31 | 2016-04-19 | Dow Global Technologies Llc | Ephemeral bonding |
| US9761474B2 (en) | 2013-12-19 | 2017-09-12 | Micron Technology, Inc. | Methods for processing semiconductor devices |
| US10903106B2 (en) | 2014-06-10 | 2021-01-26 | Nissan Chemical Industries, Ltd. | Layered body of temporary adhesive |
| DE102014219095A1 (de) | 2014-09-22 | 2016-03-24 | Nissan Chemical Industries, Ltd. | Wafer-Träger-Anordnung |
| US9644118B2 (en) | 2015-03-03 | 2017-05-09 | Dow Global Technologies Llc | Method of releasably attaching a semiconductor substrate to a carrier |
| TW201705244A (zh) * | 2015-03-04 | 2017-02-01 | 康寧公司 | 用於控制並啓動基材自載體脫結之方法與設備 |
| CN105607311B (zh) * | 2016-01-04 | 2020-06-02 | 京东方科技集团股份有限公司 | 起角装置及其使用方法 |
| US10445253B2 (en) * | 2016-04-20 | 2019-10-15 | International Business Machines Corporation | Cost effective service level agreement data management |
| US11183415B2 (en) | 2016-06-22 | 2021-11-23 | Nissan Chemical Corporation | Adhesive containing polydimethyl siloxane |
| WO2018216732A1 (ja) | 2017-05-24 | 2018-11-29 | 日産化学株式会社 | エポキシ変性ポリシロキサンを含有する仮接着剤 |
| CN110870049B (zh) | 2017-07-06 | 2023-10-03 | 日产化学株式会社 | 包含含有苯基的聚硅氧烷的临时粘接剂 |
| US10249567B2 (en) | 2017-08-18 | 2019-04-02 | Industrial Technology Research Institute | Redistribution layer structure of semiconductor package |
| US10622326B2 (en) | 2017-08-18 | 2020-04-14 | Industrial Technology Research Institute | Chip package structure |
| US10763135B2 (en) | 2018-01-30 | 2020-09-01 | Facebook Technologies, Llc | Integrated elastomeric interface layer formation and singulation for light emitting diodes |
| US12559655B2 (en) | 2018-05-01 | 2026-02-24 | Nissan Chemical Corporation | Polysiloxane-containing temporary adhesive comprising heat-resistant polymerization inhibitor |
| US10636829B1 (en) | 2018-10-24 | 2020-04-28 | Himax Technologies Limited | Wafer-level optical structure |
| KR102869673B1 (ko) | 2018-11-16 | 2025-10-13 | 닛산 가가쿠 가부시키가이샤 | 적외선 박리용 접착제 조성물, 적층체, 적층체의 제조 방법 및 박리 방법 |
| EP3882954A4 (en) | 2018-11-16 | 2022-07-27 | Nissan Chemical Corporation | LAMINATE PEELING METHOD, LAMINATE AND METHOD OF MAKING A LAMINATE |
| SG11202105574YA (en) | 2018-11-28 | 2021-06-29 | Nissan Chemical Corp | Adhesive agent composition, layered product and production method for layered product, and method for reducing thickness of semiconductor forming substrate |
| JPWO2023182138A1 (https=) | 2022-03-24 | 2023-09-28 | ||
| CN115302938B (zh) * | 2022-08-25 | 2023-12-08 | 中国科学院上海硅酸盐研究所 | 一种分离胶合组件的方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06252149A (ja) * | 1993-02-25 | 1994-09-09 | Nitto Denko Corp | バンプ形成用複合フィルムおよびそれを用いた転写バンプ形成方法 |
| JPH06268051A (ja) | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | ウエハ剥し装置 |
| US6342434B1 (en) * | 1995-12-04 | 2002-01-29 | Hitachi, Ltd. | Methods of processing semiconductor wafer, and producing IC card, and carrier |
| CN1243327A (zh) * | 1998-07-27 | 2000-02-02 | 佳能株式会社 | 样品加工装置和方法 |
| JP2001015721A (ja) * | 1999-04-30 | 2001-01-19 | Canon Inc | 複合部材の分離方法及び薄膜の製造方法 |
| JP2001089291A (ja) * | 1999-09-20 | 2001-04-03 | Canon Inc | 液相成長法、半導体部材の製造方法、太陽電池の製造方法 |
| DE10128924A1 (de) * | 2001-06-15 | 2003-01-23 | Philips Corp Intellectual Pty | Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks sowie Vorrichtung zum Durchführen dieses Verfahrens |
| DE10128923A1 (de) * | 2001-06-15 | 2003-01-23 | Philips Corp Intellectual Pty | Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks und Vorrichtung zur Durchführung dieses Verfahrens |
| JP3892703B2 (ja) * | 2001-10-19 | 2007-03-14 | 富士通株式会社 | 半導体基板用治具及びこれを用いた半導体装置の製造方法 |
| JP3948930B2 (ja) * | 2001-10-31 | 2007-07-25 | 大日本スクリーン製造株式会社 | 薄膜形成装置および薄膜形成方法 |
| JP4215998B2 (ja) * | 2002-04-30 | 2009-01-28 | リンテック株式会社 | 半導体ウエハの処理方法およびそのための半導体ウエハの転写装置 |
| JP2004063645A (ja) * | 2002-07-26 | 2004-02-26 | Enzan Seisakusho:Kk | 半導体ウェハの保護部材剥離装置 |
| AU2003299296A1 (en) * | 2002-11-29 | 2004-06-23 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer |
| JP2004300231A (ja) | 2003-03-31 | 2004-10-28 | Nitto Denko Corp | 熱剥離性両面粘着シート、被着体の加工方法および電子部品 |
| JP4592270B2 (ja) * | 2003-10-06 | 2010-12-01 | 日東電工株式会社 | 半導体ウエハの支持材からの剥離方法およびこれを用いた装置 |
| JP2006032506A (ja) * | 2004-07-14 | 2006-02-02 | Taiyo Yuden Co Ltd | 半導体ウェハの剥離方法および剥離装置 |
| JP2006319233A (ja) * | 2005-05-16 | 2006-11-24 | Lintec Corp | 脆質部材の処理装置 |
| JP4885483B2 (ja) * | 2005-06-06 | 2012-02-29 | リンテック株式会社 | 転写装置とその方法、剥離装置とその方法、貼付装置とその方法 |
| US8911583B2 (en) * | 2006-03-01 | 2014-12-16 | Thin Materials Ag | Method for processing, in particular, thin rear sides of a wafer, wafer-carrier arrangement and method for producing said type of wafer-carrier arrangement |
| JP4970863B2 (ja) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
-
2008
- 2008-12-23 DE DE102008055155A patent/DE102008055155A1/de active Granted
-
2009
- 2009-01-29 EP EP09151661A patent/EP2202788A3/de not_active Withdrawn
- 2009-12-23 EP EP09795451.5A patent/EP2382656B1/de active Active
- 2009-12-23 CN CN200980157334.7A patent/CN102326245B/zh active Active
- 2009-12-23 KR KR1020117017391A patent/KR101754327B1/ko active Active
- 2009-12-23 SG SG2011045168A patent/SG172283A1/en unknown
- 2009-12-23 US US13/141,470 patent/US8951886B2/en active Active
- 2009-12-23 WO PCT/EP2009/067893 patent/WO2010072826A2/de not_active Ceased
- 2009-12-23 PT PT09795451T patent/PT2382656T/pt unknown
- 2009-12-23 JP JP2011542832A patent/JP5727382B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8951886B2 (en) | 2015-02-10 |
| EP2202788A2 (de) | 2010-06-30 |
| KR20110128174A (ko) | 2011-11-28 |
| WO2010072826A3 (de) | 2010-10-14 |
| JP2012513684A (ja) | 2012-06-14 |
| CN102326245B (zh) | 2017-04-19 |
| EP2382656A2 (de) | 2011-11-02 |
| EP2202788A3 (de) | 2010-08-04 |
| PT2382656T (pt) | 2019-01-17 |
| JP5727382B2 (ja) | 2015-06-03 |
| DE102008055155A1 (de) | 2010-07-01 |
| WO2010072826A2 (de) | 2010-07-01 |
| KR101754327B1 (ko) | 2017-07-19 |
| US20120028438A1 (en) | 2012-02-02 |
| CN102326245A (zh) | 2012-01-18 |
| EP2382656B1 (de) | 2018-10-03 |
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