KR101742825B1 - 다마신 인터커넥트에서 전자이동 저항성 개선을 위한 계면층 - Google Patents

다마신 인터커넥트에서 전자이동 저항성 개선을 위한 계면층 Download PDF

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KR101742825B1
KR101742825B1 KR1020110004334A KR20110004334A KR101742825B1 KR 101742825 B1 KR101742825 B1 KR 101742825B1 KR 1020110004334 A KR1020110004334 A KR 1020110004334A KR 20110004334 A KR20110004334 A KR 20110004334A KR 101742825 B1 KR101742825 B1 KR 101742825B1
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South Korea
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layer
copper
substrate
insulating film
aluminum
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KR1020110004334A
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English (en)
Korean (ko)
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KR20110084130A (ko
Inventor
아난다 바너지
조니 앤드류 안토넬리
제니퍼 오'러플린
만디얌 스리람
바트 반 슈라벤디즈크
세샤사이 바라다라잔
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노벨러스 시스템즈, 인코포레이티드
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Priority claimed from US12/688,154 external-priority patent/US8268722B2/en
Priority claimed from US12/689,803 external-priority patent/US7858510B1/en
Application filed by 노벨러스 시스템즈, 인코포레이티드 filed Critical 노벨러스 시스템즈, 인코포레이티드
Publication of KR20110084130A publication Critical patent/KR20110084130A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020110004334A 2010-01-15 2011-01-17 다마신 인터커넥트에서 전자이동 저항성 개선을 위한 계면층 KR101742825B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/688,154 US8268722B2 (en) 2009-06-03 2010-01-15 Interfacial capping layers for interconnects
US12/688,154 2010-01-15
US12/689,803 2010-01-19
US12/689,803 US7858510B1 (en) 2008-02-28 2010-01-19 Interfacial layers for electromigration resistance improvement in damascene interconnects

Publications (2)

Publication Number Publication Date
KR20110084130A KR20110084130A (ko) 2011-07-21
KR101742825B1 true KR101742825B1 (ko) 2017-06-01

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KR1020110004334A KR101742825B1 (ko) 2010-01-15 2011-01-17 다마신 인터커넥트에서 전자이동 저항성 개선을 위한 계면층

Country Status (4)

Country Link
JP (1) JP5773306B2 (de)
KR (1) KR101742825B1 (de)
CN (1) CN102130046B (de)
TW (2) TW201709418A (de)

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US7727881B1 (en) 2004-11-03 2010-06-01 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
US7727880B1 (en) 2004-11-03 2010-06-01 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
CN103582932B (zh) 2011-06-03 2017-01-18 诺发系统公司 用于互连的包含金属和硅的盖层
CN104008995B (zh) * 2013-02-22 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法
SG11201506605XA (en) * 2013-03-05 2015-09-29 Entegris Inc Ion implantation compositions, systems, and methods
CN105378907A (zh) * 2013-07-24 2016-03-02 应用材料公司 钴基板处理系统、设备及方法
CN104576514B (zh) * 2013-10-29 2017-11-24 中芯国际集成电路制造(上海)有限公司 半导体器件的制备方法
CN104637864B (zh) * 2013-11-14 2017-11-24 中芯国际集成电路制造(上海)有限公司 提高数据保持能力的方法
US9368448B2 (en) * 2013-12-20 2016-06-14 Applied Materials, Inc. Metal-containing films as dielectric capping barrier for advanced interconnects
US9465071B2 (en) * 2014-03-04 2016-10-11 Mediatek Inc. Method and apparatus for generating featured scan pattern
US10319908B2 (en) * 2014-05-01 2019-06-11 Crossbar, Inc. Integrative resistive memory in backend metal layers
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
KR20230026514A (ko) 2016-10-02 2023-02-24 어플라이드 머티어리얼스, 인코포레이티드 루테늄 라이너로 구리 전자 이동을 개선하기 위한 도핑된 선택적 금속 캡
US9859153B1 (en) * 2016-11-14 2018-01-02 Lam Research Corporation Deposition of aluminum oxide etch stop layers
CN107256845A (zh) * 2017-05-25 2017-10-17 上海集成电路研发中心有限公司 一种铜互连结构及其制造方法
US20190127212A1 (en) * 2017-10-31 2019-05-02 Texas Instruments Incorporated Forming a passivation coating for mems devices
US10741440B2 (en) * 2018-06-05 2020-08-11 Lam Research Corporation Metal liner passivation and adhesion enhancement by zinc doping
US10707119B1 (en) * 2019-01-14 2020-07-07 Globalfoundries Inc. Interconnect structures with airgaps and dielectric-capped interconnects
CN111769074B (zh) * 2019-04-02 2024-09-27 长鑫存储技术有限公司 半导体互连结构及其制作方法

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JP2001524754A (ja) 1997-11-26 2001-12-04 アプライド マテリアルズ インコーポレイテッド Ｃｖｄアルミニウム及びｐｖｄアルミニウム集積を用いた新しいホール充填技術
JP2002164351A (ja) 2000-09-14 2002-06-07 Texas Instruments Inc 自己整合型銅キャップ拡散障壁形成方法
US20050142833A1 (en) 2003-12-30 2005-06-30 Dongbuanam Semiconductor Inc. Method of fabricating semiconductor device
US20070145600A1 (en) 2005-12-28 2007-06-28 Hisashi Yano Semiconductor device and manufacturing method thereof

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JP2001524754A (ja) 1997-11-26 2001-12-04 アプライド マテリアルズ インコーポレイテッド Ｃｖｄアルミニウム及びｐｖｄアルミニウム集積を用いた新しいホール充填技術
JP2002164351A (ja) 2000-09-14 2002-06-07 Texas Instruments Inc 自己整合型銅キャップ拡散障壁形成方法
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US20070145600A1 (en) 2005-12-28 2007-06-28 Hisashi Yano Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
CN102130046A (zh) 2011-07-20
KR20110084130A (ko) 2011-07-21
TW201709418A (zh) 2017-03-01
CN102130046B (zh) 2015-01-14
TWI612618B (zh) 2018-01-21
JP2011146711A (ja) 2011-07-28
JP5773306B2 (ja) 2015-09-02
TW201138024A (en) 2011-11-01

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