KR101737495B1 - 단순화된 입자 이미터 및 상기 입자 이미터의 동작 방법 - Google Patents

단순화된 입자 이미터 및 상기 입자 이미터의 동작 방법 Download PDF

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Publication number
KR101737495B1
KR101737495B1 KR1020110106613A KR20110106613A KR101737495B1 KR 101737495 B1 KR101737495 B1 KR 101737495B1 KR 1020110106613 A KR1020110106613 A KR 1020110106613A KR 20110106613 A KR20110106613 A KR 20110106613A KR 101737495 B1 KR101737495 B1 KR 101737495B1
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South Korea
Prior art keywords
emitter
charged particle
potential
particle beam
extractor
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KR1020110106613A
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Korean (ko)
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KR20120040676A (ko
Inventor
슈테판 라니오
위르겐 프로지엔
Original Assignee
아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/063Geometrical arrangement of electrodes for beam-forming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/16Vessels; Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06375Arrangement of electrodes

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020110106613A 2010-10-19 2011-10-18 단순화된 입자 이미터 및 상기 입자 이미터의 동작 방법 Active KR101737495B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10187979.9A EP2444990B1 (en) 2010-10-19 2010-10-19 Simplified particle emitter and method of operating thereof
EP10187979.9 2010-10-19

Publications (2)

Publication Number Publication Date
KR20120040676A KR20120040676A (ko) 2012-04-27
KR101737495B1 true KR101737495B1 (ko) 2017-05-18

Family

ID=43971540

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110106613A Active KR101737495B1 (ko) 2010-10-19 2011-10-18 단순화된 입자 이미터 및 상기 입자 이미터의 동작 방법

Country Status (5)

Country Link
US (2) US20120091359A1 (enExample)
EP (1) EP2444990B1 (enExample)
JP (1) JP5734809B2 (enExample)
KR (1) KR101737495B1 (enExample)
TW (1) TWI485740B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2672502B1 (en) * 2012-06-06 2017-08-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH electron beam optical system comprising high brightness electron gun with moving axis condenser lens
KR20140067578A (ko) * 2012-11-27 2014-06-05 삼성전자주식회사 전자빔 노광 장치
US8933414B2 (en) * 2013-02-27 2015-01-13 Fei Company Focused ion beam low kV enhancement
US9053893B2 (en) * 2013-03-14 2015-06-09 Schlumberger Technology Corporation Radiation generator having bi-polar electrodes
EP2779201A1 (en) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High brightness electron gun, system using the same, and method of operating the same
EP2816585A1 (en) * 2013-06-17 2014-12-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam system and method of operating thereof
JP6943701B2 (ja) * 2017-09-15 2021-10-06 日本電子株式会社 冷陰極電界放出型電子銃の調整方法
EP4117016A1 (en) * 2021-07-05 2023-01-11 ASML Netherlands B.V. Charged particle detector
US11860143B2 (en) * 2021-12-21 2024-01-02 Dionex Corporation Method and system for self-regulating a suppressor
WO2024018570A1 (ja) * 2022-07-20 2024-01-25 株式会社日立ハイテク 荷電粒子源、荷電粒子銃、荷電粒子ビーム装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070215802A1 (en) 2006-03-20 2007-09-20 Alis Technology Corporation Systems and methods for a gas field ion microscope

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211753A (ja) * 1984-04-04 1985-10-24 Hitachi Ltd 電子線照射装置
JPH01260742A (ja) * 1988-04-11 1989-10-18 Mitsubishi Electric Corp 荷電ビーム銃
JPH02192649A (ja) * 1989-01-20 1990-07-30 Toshiba Corp リニア電子銃装置
JPH03141543A (ja) * 1989-10-27 1991-06-17 Hitachi Ltd 電界放出形電子銃
JPH11185647A (ja) * 1997-12-22 1999-07-09 Nec Corp イオン源装置
US6171165B1 (en) * 1998-11-19 2001-01-09 Etec Systems, Inc. Precision alignment of microcolumn tip to a micron-size extractor aperture
US6331713B1 (en) * 1999-10-06 2001-12-18 Applied Materials, Inc. Movable ion source assembly
US6797953B2 (en) * 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
DE60308482T2 (de) * 2003-04-28 2007-06-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Vorrichtung und Verfahren zur Untersuchung einer Probe eines Spezimen mittels eines Elektronenstrahls
EP1515359A1 (en) * 2003-09-12 2005-03-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Chamber with low electron stimulated desorption
US7368727B2 (en) * 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
EP1779403A4 (en) * 2004-07-05 2009-05-06 Cebt Co Ltd METHOD FOR CONTROLLING AN ELECTRON BEAM IN A MULTIPLE-MICROSULE AND MULTIPLE MICROSULE THEREWITH
US7067807B2 (en) * 2004-09-08 2006-06-27 Applied Materials, Israel, Ltd. Charged particle beam column and method of its operation
JP2006324119A (ja) * 2005-05-19 2006-11-30 Hitachi Ltd 電子銃
EP1993119B1 (en) * 2005-09-05 2017-11-08 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam emitting device and method for operating a charged particle beam emitting device
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
US7465922B1 (en) * 2006-07-12 2008-12-16 Kla-Tencor Technologies Corporation Accelerating electrostatic lens gun for high-speed electron beam inspection
JP4920385B2 (ja) * 2006-11-29 2012-04-18 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置、走査型電子顕微鏡、及び試料観察方法
WO2008084537A1 (ja) * 2007-01-11 2008-07-17 Advantest Corporation 電子銃及び電子ビーム露光装置
JP4685115B2 (ja) * 2007-02-20 2011-05-18 株式会社アドバンテスト 電子ビーム露光方法
JP2009020594A (ja) 2007-07-10 2009-01-29 Canon Inc ジョブ管理装置、ジョブ管理方法、ジョブ管理プログラムならびに記憶媒体
JP2009205904A (ja) * 2008-02-27 2009-09-10 Hitachi High-Technologies Corp 冷陰極型電界放出電子銃及びそれを用いた電子線装置
WO2009154631A1 (en) * 2008-06-20 2009-12-23 Carl Zeiss Smt, Inc. Ion sources, systems and methods
US7960697B2 (en) * 2008-10-23 2011-06-14 Hermes-Microvision, Inc. Electron beam apparatus
US8319192B2 (en) * 2010-08-24 2012-11-27 Hermes Microvision Inc. Charged particle apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070215802A1 (en) 2006-03-20 2007-09-20 Alis Technology Corporation Systems and methods for a gas field ion microscope

Also Published As

Publication number Publication date
TWI485740B (zh) 2015-05-21
US20180254165A1 (en) 2018-09-06
JP5734809B2 (ja) 2015-06-17
KR20120040676A (ko) 2012-04-27
US10699867B2 (en) 2020-06-30
EP2444990A1 (en) 2012-04-25
EP2444990B1 (en) 2014-06-25
JP2012089506A (ja) 2012-05-10
US20120091359A1 (en) 2012-04-19
TW201230128A (en) 2012-07-16

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