TWI485740B - 簡化之粒子發射器及該發射器之操作方法 - Google Patents

簡化之粒子發射器及該發射器之操作方法 Download PDF

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Publication number
TWI485740B
TWI485740B TW100134821A TW100134821A TWI485740B TW I485740 B TWI485740 B TW I485740B TW 100134821 A TW100134821 A TW 100134821A TW 100134821 A TW100134821 A TW 100134821A TW I485740 B TWI485740 B TW I485740B
Authority
TW
Taiwan
Prior art keywords
extractor
potential
emitter
charged particle
particle beam
Prior art date
Application number
TW100134821A
Other languages
English (en)
Chinese (zh)
Other versions
TW201230128A (en
Inventor
Stefan Lanio
Jurgen Frosien
Original Assignee
Integrated Circuit Testing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Circuit Testing filed Critical Integrated Circuit Testing
Publication of TW201230128A publication Critical patent/TW201230128A/zh
Application granted granted Critical
Publication of TWI485740B publication Critical patent/TWI485740B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/063—Geometrical arrangement of electrodes for beam-forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06375—Arrangement of electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
TW100134821A 2010-10-19 2011-09-27 簡化之粒子發射器及該發射器之操作方法 TWI485740B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10187979.9A EP2444990B1 (en) 2010-10-19 2010-10-19 Simplified particle emitter and method of operating thereof

Publications (2)

Publication Number Publication Date
TW201230128A TW201230128A (en) 2012-07-16
TWI485740B true TWI485740B (zh) 2015-05-21

Family

ID=43971540

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100134821A TWI485740B (zh) 2010-10-19 2011-09-27 簡化之粒子發射器及該發射器之操作方法

Country Status (5)

Country Link
US (2) US20120091359A1 (enExample)
EP (1) EP2444990B1 (enExample)
JP (1) JP5734809B2 (enExample)
KR (1) KR101737495B1 (enExample)
TW (1) TWI485740B (enExample)

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EP2672502B1 (en) * 2012-06-06 2017-08-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH electron beam optical system comprising high brightness electron gun with moving axis condenser lens
KR20140067578A (ko) * 2012-11-27 2014-06-05 삼성전자주식회사 전자빔 노광 장치
US8933414B2 (en) * 2013-02-27 2015-01-13 Fei Company Focused ion beam low kV enhancement
US9053893B2 (en) * 2013-03-14 2015-06-09 Schlumberger Technology Corporation Radiation generator having bi-polar electrodes
EP2779201A1 (en) * 2013-03-15 2014-09-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH High brightness electron gun, system using the same, and method of operating the same
EP2816585A1 (en) * 2013-06-17 2014-12-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam system and method of operating thereof
JP6943701B2 (ja) * 2017-09-15 2021-10-06 日本電子株式会社 冷陰極電界放出型電子銃の調整方法
EP4117016A1 (en) * 2021-07-05 2023-01-11 ASML Netherlands B.V. Charged particle detector
US11860143B2 (en) * 2021-12-21 2024-01-02 Dionex Corporation Method and system for self-regulating a suppressor
WO2024018570A1 (ja) * 2022-07-20 2024-01-25 株式会社日立ハイテク 荷電粒子源、荷電粒子銃、荷電粒子ビーム装置

Citations (4)

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US20070138388A1 (en) * 2003-10-16 2007-06-21 Ward Billy W Ion sources, systems and methods
TW200735162A (en) * 2005-12-02 2007-09-16 Alis Corp Ion sources, systems and methods
US20070215802A1 (en) * 2006-03-20 2007-09-20 Alis Technology Corporation Systems and methods for a gas field ion microscope
WO2008084537A1 (ja) * 2007-01-11 2008-07-17 Advantest Corporation 電子銃及び電子ビーム露光装置

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JPS60211753A (ja) * 1984-04-04 1985-10-24 Hitachi Ltd 電子線照射装置
JPH01260742A (ja) * 1988-04-11 1989-10-18 Mitsubishi Electric Corp 荷電ビーム銃
JPH02192649A (ja) * 1989-01-20 1990-07-30 Toshiba Corp リニア電子銃装置
JPH03141543A (ja) * 1989-10-27 1991-06-17 Hitachi Ltd 電界放出形電子銃
JPH11185647A (ja) * 1997-12-22 1999-07-09 Nec Corp イオン源装置
US6171165B1 (en) * 1998-11-19 2001-01-09 Etec Systems, Inc. Precision alignment of microcolumn tip to a micron-size extractor aperture
US6331713B1 (en) * 1999-10-06 2001-12-18 Applied Materials, Inc. Movable ion source assembly
US6797953B2 (en) * 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
DE60308482T2 (de) * 2003-04-28 2007-06-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Vorrichtung und Verfahren zur Untersuchung einer Probe eines Spezimen mittels eines Elektronenstrahls
EP1515359A1 (en) * 2003-09-12 2005-03-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Chamber with low electron stimulated desorption
US7368727B2 (en) * 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
EP1779403A4 (en) * 2004-07-05 2009-05-06 Cebt Co Ltd METHOD FOR CONTROLLING AN ELECTRON BEAM IN A MULTIPLE-MICROSULE AND MULTIPLE MICROSULE THEREWITH
US7067807B2 (en) * 2004-09-08 2006-06-27 Applied Materials, Israel, Ltd. Charged particle beam column and method of its operation
JP2006324119A (ja) * 2005-05-19 2006-11-30 Hitachi Ltd 電子銃
EP1993119B1 (en) * 2005-09-05 2017-11-08 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam emitting device and method for operating a charged particle beam emitting device
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US20070138388A1 (en) * 2003-10-16 2007-06-21 Ward Billy W Ion sources, systems and methods
TW200735162A (en) * 2005-12-02 2007-09-16 Alis Corp Ion sources, systems and methods
US20070215802A1 (en) * 2006-03-20 2007-09-20 Alis Technology Corporation Systems and methods for a gas field ion microscope
WO2008084537A1 (ja) * 2007-01-11 2008-07-17 Advantest Corporation 電子銃及び電子ビーム露光装置

Also Published As

Publication number Publication date
US20180254165A1 (en) 2018-09-06
JP5734809B2 (ja) 2015-06-17
KR20120040676A (ko) 2012-04-27
US10699867B2 (en) 2020-06-30
EP2444990A1 (en) 2012-04-25
KR101737495B1 (ko) 2017-05-18
EP2444990B1 (en) 2014-06-25
JP2012089506A (ja) 2012-05-10
US20120091359A1 (en) 2012-04-19
TW201230128A (en) 2012-07-16

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