KR101736520B1 - 레이저 빔으로 비결정질 반도체 층의 결정화하기 위한 방법 및 장치 - Google Patents

레이저 빔으로 비결정질 반도체 층의 결정화하기 위한 방법 및 장치 Download PDF

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Publication number
KR101736520B1
KR101736520B1 KR1020127011597A KR20127011597A KR101736520B1 KR 101736520 B1 KR101736520 B1 KR 101736520B1 KR 1020127011597 A KR1020127011597 A KR 1020127011597A KR 20127011597 A KR20127011597 A KR 20127011597A KR 101736520 B1 KR101736520 B1 KR 101736520B1
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South Korea
Prior art keywords
semiconductor layer
plasma
laser beam
amorphous semiconductor
crystallizing
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KR1020127011597A
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English (en)
Korean (ko)
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KR20120086303A (ko
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카이 슈미트
클라우스 피펏
클라우스 피펏
스테판 비네케
볼프강 비올
Original Assignee
코히런트 게엠바하
호흐슐레 퍼 안게반테 비센샤프트 운드 쿤스트 파흐호흐슐레 힐데스하임/홀츠민덴/괴팅겐
레이저 라보라토리움 괴팅겐 이.브이. (엘엘쥐)
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Application filed by 코히런트 게엠바하, 호흐슐레 퍼 안게반테 비센샤프트 운드 쿤스트 파흐호흐슐레 힐데스하임/홀츠민덴/괴팅겐, 레이저 라보라토리움 괴팅겐 이.브이. (엘엘쥐) filed Critical 코히런트 게엠바하
Publication of KR20120086303A publication Critical patent/KR20120086303A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/346—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding
    • B23K26/348—Working by laser beam, e.g. welding, cutting or boring in combination with welding or cutting covered by groups B23K5/00 - B23K25/00, e.g. in combination with resistance welding in combination with arc heating, e.g. TIG [tungsten inert gas], MIG [metal inert gas] or plasma welding
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
KR1020127011597A 2009-10-26 2010-10-22 레이저 빔으로 비결정질 반도체 층의 결정화하기 위한 방법 및 장치 KR101736520B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009050680.2A DE102009050680B4 (de) 2009-10-26 2009-10-26 Verfahren und Vorrichtung zum Kristallisieren einer amorphen Halbleiterschicht mit einem Laserstrahl
DE102009050680.2 2009-10-26
PCT/EP2010/006486 WO2011054454A1 (de) 2009-10-26 2010-10-22 Verfahren und vorrichtung zum kristallisieren einer amorphen halbleiterschicht mit einem laserstrahl

Publications (2)

Publication Number Publication Date
KR20120086303A KR20120086303A (ko) 2012-08-02
KR101736520B1 true KR101736520B1 (ko) 2017-05-29

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KR1020127011597A KR101736520B1 (ko) 2009-10-26 2010-10-22 레이저 빔으로 비결정질 반도체 층의 결정화하기 위한 방법 및 장치

Country Status (3)

Country Link
KR (1) KR101736520B1 (de)
DE (1) DE102009050680B4 (de)
WO (1) WO2011054454A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021045496A1 (ko) * 2019-09-02 2021-03-11 포항공과대학교 산학협력단 레이저 가열과 플라즈마를 이용한 산화환원 처리방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012014537B4 (de) * 2012-07-21 2015-08-20 Bundesrepublik Deutschland, vertreten durch das Bundesministerium der Verteidigung, dieses vertreten durch das Bundesamt für Ausrüstung, Informationstechnik und Nutzung der Bundeswehr Verfahren zur Glättung einer beschädigten Außenoberfläche und Atmosphärenplasmaeinrichtung dafür
US11437236B2 (en) * 2016-01-08 2022-09-06 The Trustees Of Columbia University In Thf City Of New York Methods and systems for spot beam crystallization
KR101805740B1 (ko) * 2016-05-27 2017-12-07 주식회사 에이피피 가시성 있는 대기압 플라즈마 발생장치
KR102027464B1 (ko) * 2017-03-07 2019-10-04 주식회사 비아트론 화이버 레이저와 폴리곤 스캐너를 이용한 실리콘 박막 결정화 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031511A (ja) 2002-06-24 2004-01-29 Ulvac Japan Ltd 大気圧下での基板の連続処理装置及び方法
WO2008091242A2 (en) 2005-12-21 2008-07-31 Uva Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993019022A1 (fr) 1992-03-25 1993-09-30 Kanegafuchi Chemical Industry Co., Ltd. Couche mince de polysilicium et sa fabrication
DE19532412C2 (de) 1995-09-01 1999-09-30 Agrodyn Hochspannungstechnik G Vorrichtung zur Oberflächen-Vorbehandlung von Werkstücken
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
US20060024442A1 (en) 2003-05-19 2006-02-02 Ovshinsky Stanford R Deposition methods for the formation of polycrystalline materials on mobile substrates
EP1586675B1 (de) 2004-04-16 2009-03-25 Siemens Aktiengesellschaft Verfahren zur Innenbeschichtung eines Bauteils mit einem Hohlraum

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031511A (ja) 2002-06-24 2004-01-29 Ulvac Japan Ltd 大気圧下での基板の連続処理装置及び方法
WO2008091242A2 (en) 2005-12-21 2008-07-31 Uva Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 26, NO. 6, DECEMBER 1998

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021045496A1 (ko) * 2019-09-02 2021-03-11 포항공과대학교 산학협력단 레이저 가열과 플라즈마를 이용한 산화환원 처리방법

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Publication number Publication date
WO2011054454A1 (de) 2011-05-12
KR20120086303A (ko) 2012-08-02
DE102009050680A1 (de) 2011-04-28
DE102009050680B4 (de) 2019-02-07

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