KR101735972B1 - 기판 세정 방법, 기판 세정 장치 및 진공 처리 시스템 - Google Patents

기판 세정 방법, 기판 세정 장치 및 진공 처리 시스템 Download PDF

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Publication number
KR101735972B1
KR101735972B1 KR1020157007529A KR20157007529A KR101735972B1 KR 101735972 B1 KR101735972 B1 KR 101735972B1 KR 1020157007529 A KR1020157007529 A KR 1020157007529A KR 20157007529 A KR20157007529 A KR 20157007529A KR 101735972 B1 KR101735972 B1 KR 101735972B1
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South Korea
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gas
substrate
pressure
carbon dioxide
wafer
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Korean (ko)
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KR20150058253A (ko
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가즈야 도바시
겐스케 이나이
미사코 사이토
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도쿄엘렉트론가부시키가이샤
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    • H01L21/0209—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H01L21/02087—
    • H01L21/67028—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/56—Cleaning of wafer backside
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
KR1020157007529A 2012-09-28 2013-08-28 기판 세정 방법, 기판 세정 장치 및 진공 처리 시스템 Active KR101735972B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-217539 2012-09-28
JP2012217539A JP6048043B2 (ja) 2012-09-28 2012-09-28 基板洗浄方法、基板洗浄装置及び真空処理システム
PCT/JP2013/005079 WO2014049959A1 (ja) 2012-09-28 2013-08-28 基板洗浄方法、基板洗浄装置及び真空処理システム

Publications (2)

Publication Number Publication Date
KR20150058253A KR20150058253A (ko) 2015-05-28
KR101735972B1 true KR101735972B1 (ko) 2017-05-15

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KR1020157007529A Active KR101735972B1 (ko) 2012-09-28 2013-08-28 기판 세정 방법, 기판 세정 장치 및 진공 처리 시스템

Country Status (4)

Country Link
US (1) US9960056B2 (https=)
JP (1) JP6048043B2 (https=)
KR (1) KR101735972B1 (https=)
WO (1) WO2014049959A1 (https=)

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KR20180087269A (ko) * 2015-11-30 2018-08-01 도쿄엘렉트론가부시키가이샤 기판 처리 장치의 챔버 클리닝 방법

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US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
TWI681437B (zh) * 2014-10-06 2020-01-01 美商東京威力科創Ｆｓｉ股份有限公司 以低溫流體混合物處理基板的系統及方法
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
JP6545511B2 (ja) 2015-04-10 2019-07-17 株式会社東芝 処理装置
US20160322239A1 (en) * 2015-04-28 2016-11-03 Applied Materials, Inc. Methods and Apparatus for Cleaning a Substrate
WO2016194285A1 (ja) 2015-06-03 2016-12-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法
JP6618334B2 (ja) * 2015-06-03 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法
JP6596340B2 (ja) * 2016-01-21 2019-10-23 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
CN106040668B (zh) 2016-05-27 2019-06-18 京东方科技集团股份有限公司 用于显示屏的除尘装置、除尘方法及相应的显示装置
JP6998664B2 (ja) * 2017-03-23 2022-01-18 東京エレクトロン株式会社 ガスクラスター処理装置およびガスクラスター処理方法
TWI834489B (zh) * 2017-12-13 2024-03-01 日商東京威力科創股份有限公司 基板處理裝置
US10854442B2 (en) * 2018-06-29 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Orientation chamber of substrate processing system with purging function
EP3594748B1 (en) 2018-07-09 2021-04-14 C&D Semiconductor Services. Inc Optimal exposure of a bottom surface of a substrate material and/or edges thereof for cleaning in a spin coating device
US20200035484A1 (en) * 2018-07-30 2020-01-30 Lam Research Corporation System and method for chemical and heated wetting of substrates prior to metal plating
US12412736B2 (en) * 2018-09-28 2025-09-09 Lam Research Corporation Methods and systems for managing byproduct material accumulation during plasma-based semiconductor wafer fabrication process
CN110459493B (zh) * 2019-08-21 2022-03-22 北京北方华创微电子装备有限公司 抽真空腔室及抽真空方法
KR102130713B1 (ko) * 2019-12-30 2020-08-05 (주)에프피에이 미세입자 세정용 냉각입자 생성장치 및 그 구동방법
WO2022002349A1 (en) * 2020-06-29 2022-01-06 Applied Materials, Inc. Nozzle assembly, evaporation source, deposition system and method for depositing an evaporated material onto a substrate
JP7464467B2 (ja) * 2020-07-01 2024-04-09 株式会社ディスコ ウェーハ洗浄装置
JP7539297B2 (ja) * 2020-10-29 2024-08-23 東京エレクトロン株式会社 基板処理方法および基板処理システム
CN112768376B (zh) * 2020-12-30 2022-12-16 上海至纯洁净系统科技股份有限公司 一种晶圆清洗装置和晶圆清洗方法
US12009246B2 (en) 2021-03-26 2024-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate holder and methods of use

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JP2012119065A (ja) * 2010-11-29 2012-06-21 Japan Atomic Energy Agency イオン加速方法、イオン加速装置、及び、イオンビーム照射装置、医療用イオンビーム照射装置

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JPH11330033A (ja) * 1998-05-12 1999-11-30 Fraser Scient Inc エネルギーを有するクラスタ・ビームを使用して汚染表面を洗浄する方法および装置
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JP2011171584A (ja) * 2010-02-19 2011-09-01 Tokyo Electron Ltd 基板洗浄方法及び基板洗浄装置
JP2012119065A (ja) * 2010-11-29 2012-06-21 Japan Atomic Energy Agency イオン加速方法、イオン加速装置、及び、イオンビーム照射装置、医療用イオンビーム照射装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180087269A (ko) * 2015-11-30 2018-08-01 도쿄엘렉트론가부시키가이샤 기판 처리 장치의 챔버 클리닝 방법
KR102541747B1 (ko) 2015-11-30 2023-06-08 도쿄엘렉트론가부시키가이샤 기판 처리 장치의 챔버 클리닝 방법

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Publication number Publication date
WO2014049959A1 (ja) 2014-04-03
US9960056B2 (en) 2018-05-01
JP6048043B2 (ja) 2016-12-21
US20150255316A1 (en) 2015-09-10
JP2014072383A (ja) 2014-04-21
KR20150058253A (ko) 2015-05-28

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