KR101718798B1 - 안정화된 화학 기계적 연마 조성물 및 기판의 연마 방법 - Google Patents

안정화된 화학 기계적 연마 조성물 및 기판의 연마 방법 Download PDF

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Publication number
KR101718798B1
KR101718798B1 KR1020110057354A KR20110057354A KR101718798B1 KR 101718798 B1 KR101718798 B1 KR 101718798B1 KR 1020110057354 A KR1020110057354 A KR 1020110057354A KR 20110057354 A KR20110057354 A KR 20110057354A KR 101718798 B1 KR101718798 B1 KR 101718798B1
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South Korea
Prior art keywords
chemical mechanical
mechanical polishing
formula
anion
polishing composition
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KR1020110057354A
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English (en)
Korean (ko)
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KR20110136742A (ko
Inventor
이 구오
젠동 루
쿠마르 레디 칸차를라-아룬
장광윤
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Publication of KR20110136742A publication Critical patent/KR20110136742A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020110057354A 2010-06-15 2011-06-14 안정화된 화학 기계적 연마 조성물 및 기판의 연마 방법 Expired - Fee Related KR101718798B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/815,564 2010-06-15
US12/815,564 US8232208B2 (en) 2010-06-15 2010-06-15 Stabilized chemical mechanical polishing composition and method of polishing a substrate

Publications (2)

Publication Number Publication Date
KR20110136742A KR20110136742A (ko) 2011-12-21
KR101718798B1 true KR101718798B1 (ko) 2017-03-22

Family

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Family Applications (1)

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KR1020110057354A Expired - Fee Related KR101718798B1 (ko) 2010-06-15 2011-06-14 안정화된 화학 기계적 연마 조성물 및 기판의 연마 방법

Country Status (7)

Country Link
US (2) US8232208B2 (https=)
JP (1) JP5843093B2 (https=)
KR (1) KR101718798B1 (https=)
CN (1) CN102363713B (https=)
DE (1) DE102011104161B4 (https=)
FR (1) FR2961214B1 (https=)
TW (1) TWI480368B (https=)

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US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
CN111318956A (zh) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 聚氨酯研磨垫及其制造方法、及化学机械研磨装置
JP7681402B2 (ja) * 2021-01-14 2025-05-22 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法、基板の製造方法
JP7778621B2 (ja) * 2021-03-31 2025-12-02 株式会社フジミインコーポレーテッド 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法

Citations (1)

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KR100827591B1 (ko) 2006-11-27 2008-05-07 제일모직주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물

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JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
JP4256389B2 (ja) * 2003-11-17 2009-04-22 セダーマ テトラペプチドとトリペプチドの混合物を含む組成物
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
KR100611064B1 (ko) * 2004-07-15 2006-08-10 삼성전자주식회사 화학 기계적 연마 공정용 슬러리 조성물, 상기 슬러리조성물을 이용한 화학 기계적 연마 방법 및 상기 방법을이용한 게이트 패턴의 형성 방법
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
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KR20080042043A (ko) * 2005-09-09 2008-05-14 아사히 가라스 가부시키가이샤 연마제, 피연마면의 연마 방법 및 반도체 집적 회로 장치의제조 방법
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
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JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
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US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US8513126B2 (en) 2010-09-22 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100827591B1 (ko) 2006-11-27 2008-05-07 제일모직주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물

Also Published As

Publication number Publication date
DE102011104161A1 (de) 2012-01-26
US20120258598A1 (en) 2012-10-11
TW201204816A (en) 2012-02-01
JP5843093B2 (ja) 2016-01-13
US8232208B2 (en) 2012-07-31
US20110306211A1 (en) 2011-12-15
FR2961214B1 (fr) 2015-02-27
CN102363713A (zh) 2012-02-29
JP2012039087A (ja) 2012-02-23
DE102011104161B4 (de) 2022-12-15
FR2961214A1 (fr) 2011-12-16
TWI480368B (zh) 2015-04-11
KR20110136742A (ko) 2011-12-21
US8444728B2 (en) 2013-05-21
CN102363713B (zh) 2014-12-10

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