JP5843093B2 - 安定化されたケミカルメカニカルポリッシング組成物及び基板を研磨する方法 - Google Patents

安定化されたケミカルメカニカルポリッシング組成物及び基板を研磨する方法 Download PDF

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Publication number
JP5843093B2
JP5843093B2 JP2011133174A JP2011133174A JP5843093B2 JP 5843093 B2 JP5843093 B2 JP 5843093B2 JP 2011133174 A JP2011133174 A JP 2011133174A JP 2011133174 A JP2011133174 A JP 2011133174A JP 5843093 B2 JP5843093 B2 JP 5843093B2
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JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
formula
anion
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2011133174A
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English (en)
Japanese (ja)
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JP2012039087A (ja
JP2012039087A5 (https=
Inventor
イ・グォ
チェントン・リウ
カンチャーラ−アルン・クマール・レディ
グアンユン・ツァン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
DuPont Electronic Materials Holding Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2011133174A 2010-06-15 2011-06-15 安定化されたケミカルメカニカルポリッシング組成物及び基板を研磨する方法 Expired - Fee Related JP5843093B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/815,564 2010-06-15
US12/815,564 US8232208B2 (en) 2010-06-15 2010-06-15 Stabilized chemical mechanical polishing composition and method of polishing a substrate

Publications (3)

Publication Number Publication Date
JP2012039087A JP2012039087A (ja) 2012-02-23
JP2012039087A5 JP2012039087A5 (https=) 2014-07-24
JP5843093B2 true JP5843093B2 (ja) 2016-01-13

Family

ID=45047467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011133174A Expired - Fee Related JP5843093B2 (ja) 2010-06-15 2011-06-15 安定化されたケミカルメカニカルポリッシング組成物及び基板を研磨する方法

Country Status (7)

Country Link
US (2) US8232208B2 (https=)
JP (1) JP5843093B2 (https=)
KR (1) KR101718798B1 (https=)
CN (1) CN102363713B (https=)
DE (1) DE102011104161B4 (https=)
FR (1) FR2961214B1 (https=)
TW (1) TWI480368B (https=)

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* Cited by examiner, † Cited by third party
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US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US9803108B1 (en) 2016-10-19 2017-10-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous compositions of stabilized aminosilane group containing silica particles
CN111318956A (zh) * 2018-12-13 2020-06-23 夏泰鑫半导体(青岛)有限公司 聚氨酯研磨垫及其制造方法、及化学机械研磨装置
JP7681402B2 (ja) * 2021-01-14 2025-05-22 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法、基板の製造方法
JP7778621B2 (ja) * 2021-03-31 2025-12-02 株式会社フジミインコーポレーテッド 第四級アンモニウム系表面修飾シリカ、その組成物、作製方法、および使用方法

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US6533832B2 (en) * 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
KR100378180B1 (ko) 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
JP4256389B2 (ja) * 2003-11-17 2009-04-22 セダーマ テトラペプチドとトリペプチドの混合物を含む組成物
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
KR100611064B1 (ko) * 2004-07-15 2006-08-10 삼성전자주식회사 화학 기계적 연마 공정용 슬러리 조성물, 상기 슬러리조성물을 이용한 화학 기계적 연마 방법 및 상기 방법을이용한 게이트 패턴의 형성 방법
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20060205219A1 (en) 2005-03-08 2006-09-14 Baker Arthur R Iii Compositions and methods for chemical mechanical polishing interlevel dielectric layers
KR20080042043A (ko) * 2005-09-09 2008-05-14 아사히 가라스 가부시키가이샤 연마제, 피연마면의 연마 방법 및 반도체 집적 회로 장치의제조 방법
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
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US20080220610A1 (en) 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
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KR100827591B1 (ko) 2006-11-27 2008-05-07 제일모직주식회사 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물
JP5322455B2 (ja) 2007-02-26 2013-10-23 富士フイルム株式会社 研磨液及び研磨方法
US20080314872A1 (en) * 2007-06-19 2008-12-25 Ferro Corporation Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same
CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
JP2009278061A (ja) * 2008-04-16 2009-11-26 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
CN101665662A (zh) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 一种化学机械抛光液
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8119529B2 (en) 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US8513126B2 (en) 2010-09-22 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate

Also Published As

Publication number Publication date
DE102011104161A1 (de) 2012-01-26
US20120258598A1 (en) 2012-10-11
TW201204816A (en) 2012-02-01
US8232208B2 (en) 2012-07-31
US20110306211A1 (en) 2011-12-15
FR2961214B1 (fr) 2015-02-27
CN102363713A (zh) 2012-02-29
JP2012039087A (ja) 2012-02-23
DE102011104161B4 (de) 2022-12-15
FR2961214A1 (fr) 2011-12-16
TWI480368B (zh) 2015-04-11
KR101718798B1 (ko) 2017-03-22
KR20110136742A (ko) 2011-12-21
US8444728B2 (en) 2013-05-21
CN102363713B (zh) 2014-12-10

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