KR101711687B1 - 일체형 한정 링 배열 및 그 방법 - Google Patents

일체형 한정 링 배열 및 그 방법 Download PDF

Info

Publication number
KR101711687B1
KR101711687B1 KR1020127007783A KR20127007783A KR101711687B1 KR 101711687 B1 KR101711687 B1 KR 101711687B1 KR 1020127007783 A KR1020127007783 A KR 1020127007783A KR 20127007783 A KR20127007783 A KR 20127007783A KR 101711687 B1 KR101711687 B1 KR 101711687B1
Authority
KR
South Korea
Prior art keywords
integral
ring arrangement
confined chamber
conductance path
gas conductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020127007783A
Other languages
English (en)
Korean (ko)
Other versions
KR20120088687A (ko
Inventor
라진더 딘드사
라자라마난 칼리아나라만
사티아나라야난 마니
과탐 바타차리야
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20120088687A publication Critical patent/KR20120088687A/ko
Application granted granted Critical
Publication of KR101711687B1 publication Critical patent/KR101711687B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020127007783A 2009-09-28 2010-09-27 일체형 한정 링 배열 및 그 방법 Active KR101711687B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24652609P 2009-09-28 2009-09-28
US61/246,526 2009-09-28
PCT/US2010/050401 WO2011038344A2 (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof

Publications (2)

Publication Number Publication Date
KR20120088687A KR20120088687A (ko) 2012-08-08
KR101711687B1 true KR101711687B1 (ko) 2017-03-02

Family

ID=43778979

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127007783A Active KR101711687B1 (ko) 2009-09-28 2010-09-27 일체형 한정 링 배열 및 그 방법

Country Status (8)

Country Link
US (2) US20110073257A1 (enExample)
EP (1) EP2484185A4 (enExample)
JP (2) JP5792174B2 (enExample)
KR (1) KR101711687B1 (enExample)
CN (1) CN102656952B (enExample)
SG (2) SG178371A1 (enExample)
TW (1) TWI567818B (enExample)
WO (1) WO2011038344A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
CN103854943B (zh) * 2012-11-30 2016-05-04 中微半导体设备(上海)有限公司 一种用于等离子体处理腔室的约束环及腔室清洁方法
CN103906336A (zh) * 2014-04-14 2014-07-02 中国科学院工程热物理研究所 压力温度可调的气体放电等离子体发生装置
CN105789008B (zh) * 2014-12-22 2017-12-19 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体刻蚀方法
KR102552776B1 (ko) 2015-11-30 2023-07-10 (주)아모레퍼시픽 miRNA를 포함하는 흑색종 전이 억제용 조성물
US9953843B2 (en) * 2016-02-05 2018-04-24 Lam Research Corporation Chamber for patterning non-volatile metals
GB201603581D0 (en) * 2016-03-01 2016-04-13 Spts Technologies Ltd Plasma processing apparatus
JP7296829B2 (ja) * 2019-09-05 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置、処理方法、上部電極構造
CN112713075B (zh) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体隔离环、等离子体处理装置与基片处理方法
CN113745081B (zh) * 2020-05-27 2024-03-12 中微半导体设备(上海)股份有限公司 一种隔离环组件、等离子体处理装置及处理方法
CN113808900B (zh) * 2020-06-17 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其约束环组件与方法
CN114639585B (zh) * 2020-12-16 2025-02-14 中微半导体设备(上海)股份有限公司 约束环组件、等离子处理装置及其排气控制方法
CN115881506B (zh) * 2023-03-02 2023-06-27 深圳市新凯来技术有限公司 等离子体调节装置及半导体刻蚀设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058298A (ja) * 1998-08-06 2000-02-25 Foi:Kk プラズマリアクタ
JP2003318163A (ja) * 2002-04-25 2003-11-07 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
WO2009100289A2 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Methods and apparatus for changing area ratio in a plasma processing system

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3165941B2 (ja) * 1993-10-04 2001-05-14 東京エレクトロン株式会社 プラズマ処理装置及びその方法
JP3222859B2 (ja) * 1994-04-20 2001-10-29 東京エレクトロン株式会社 プラズマ処理装置
TW323387B (enExample) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
JP3192370B2 (ja) * 1995-06-08 2001-07-23 東京エレクトロン株式会社 プラズマ処理装置
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JP3535309B2 (ja) * 1996-04-10 2004-06-07 東京エレクトロン株式会社 減圧処理装置
JP4405496B2 (ja) * 1997-02-24 2010-01-27 株式会社エフオーアイ プラズマ処理装置
JP3468446B2 (ja) * 1997-05-20 2003-11-17 東京エレクトロン株式会社 プラズマ処理装置
KR19990036942U (ko) * 1999-05-01 1999-10-05 김시오 충격흡수를위한가이드레일
US6203661B1 (en) * 1999-12-07 2001-03-20 Trusi Technologies, Llc Brim and gas escape for non-contact wafer holder
JP2001185542A (ja) * 1999-12-27 2001-07-06 Hitachi Ltd プラズマ処理装置及びそれを用いたプラズマ処理方法
US6350317B1 (en) * 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
JP2002018276A (ja) * 2000-07-10 2002-01-22 Pearl Kogyo Kk 大気圧プラズマ処理装置
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6602381B1 (en) * 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
JP4268433B2 (ja) * 2003-04-02 2009-05-27 積水化学工業株式会社 プラズマ処理装置
JP4286576B2 (ja) * 2003-04-25 2009-07-01 東京エレクトロン株式会社 プラズマ処理装置
US7276135B2 (en) * 2004-05-28 2007-10-02 Lam Research Corporation Vacuum plasma processor including control in response to DC bias voltage
US20060177600A1 (en) * 2005-02-08 2006-08-10 Applied Materials, Inc. Inductive plasma system with sidewall magnet
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7875824B2 (en) * 2006-10-16 2011-01-25 Lam Research Corporation Quartz guard ring centering features
JP5029041B2 (ja) * 2007-01-30 2012-09-19 Ｔｄｋ株式会社 プラズマｃｖｄ装置、及び、薄膜製造方法
KR101625516B1 (ko) * 2008-02-08 2016-05-30 램 리써치 코포레이션 플라즈마 프로세싱 장치 및 플라즈마 프로세싱 장치에서 반도체 기판을 처리하는 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058298A (ja) * 1998-08-06 2000-02-25 Foi:Kk プラズマリアクタ
JP2003318163A (ja) * 2002-04-25 2003-11-07 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
WO2009100289A2 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Methods and apparatus for changing area ratio in a plasma processing system

Also Published As

Publication number Publication date
JP5792174B2 (ja) 2015-10-07
JP2013506301A (ja) 2013-02-21
US20150325414A1 (en) 2015-11-12
CN102656952A (zh) 2012-09-05
WO2011038344A2 (en) 2011-03-31
CN102656952B (zh) 2016-10-12
EP2484185A4 (en) 2014-07-23
TW201133607A (en) 2011-10-01
SG178371A1 (en) 2012-03-29
WO2011038344A3 (en) 2011-07-28
EP2484185A2 (en) 2012-08-08
TWI567818B (zh) 2017-01-21
JP6204940B2 (ja) 2017-09-27
US20110073257A1 (en) 2011-03-31
JP2015201653A (ja) 2015-11-12
KR20120088687A (ko) 2012-08-08
SG10201405469WA (en) 2014-10-30

Similar Documents

Publication Publication Date Title
KR101711687B1 (ko) 일체형 한정 링 배열 및 그 방법
KR101723253B1 (ko) 국부 플라즈마 한정 및 압력 제어 장치 및 방법
KR101408456B1 (ko) 다중-구역 종료점 검출기
KR101591128B1 (ko) 조정가능 갭 플라즈마 챔버에서의 듀얼 컨파인먼트 및 초고압을 위한 방법 및 장치
US7824519B2 (en) Variable volume plasma processing chamber and associated methods
KR102120628B1 (ko) 폐쇄 루프 제어를 갖는 바닥 및 측부 플라즈마 튜닝
US10297422B2 (en) Systems and methods for calibrating conversion models and performing position conversions of variable capacitors in match networks of plasma processing systems
KR101498322B1 (ko) 와이드 컨덕턴스 키트를 위한 방법 및 장치
US20030230551A1 (en) Etching system and etching method
KR100713200B1 (ko) 에칭 장치
KR102016190B1 (ko) 분포된 다중존 플라즈마 소스 시스템들, 방법들 및 장치
US20170154780A1 (en) Substrate processing method and apparatus thereof
KR101533476B1 (ko) 플라즈마 프로세싱 시스템 내의 면적비를 변경하는 방법 및 장치
KR102087453B1 (ko) 분포된 동심의 다중 구역 플라즈마 소스 시스템들, 방법들 및 장치
US20090156011A1 (en) Method of controlling CD bias and CD microloading by changing the ceiling-to-wafer gap in a plasma reactor
KR20170004898A (ko) 임계 치수 균일성의 최적화를 위한 반도체 챔버 동작 파라미터들의 결정
CN114059044A (zh) 一种膜层生长设备和膜层生长方法
US12463016B2 (en) Devices and methods for controlling wafer uniformity in plasma-based process
KR102895540B1 (ko) 가변 커패시턴스 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
US10283325B2 (en) Distributed multi-zone plasma source systems, methods and apparatus

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20120326

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150925

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160822

Patent event code: PE09021S01D

PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20170215

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20170223

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20170223

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20200214

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20200214

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20210210

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20220216

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20230209

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20240206

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20250205

Start annual number: 9

End annual number: 9