TWI567818B - 整組之侷限環設備 - Google Patents
整組之侷限環設備 Download PDFInfo
- Publication number
- TWI567818B TWI567818B TW099132788A TW99132788A TWI567818B TW I567818 B TWI567818 B TW I567818B TW 099132788 A TW099132788 A TW 099132788A TW 99132788 A TW99132788 A TW 99132788A TW I567818 B TWI567818 B TW I567818B
- Authority
- TW
- Taiwan
- Prior art keywords
- restricted
- chamber
- pressure control
- plasma
- processing
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 39
- 238000006073 displacement reaction Methods 0.000 claims description 12
- 230000000670 limiting effect Effects 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 48
- 238000000034 method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000002860 competitive effect Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007405 data analysis Methods 0.000 description 3
- 238000013480 data collection Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000004061 bleaching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24652609P | 2009-09-28 | 2009-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201133607A TW201133607A (en) | 2011-10-01 |
| TWI567818B true TWI567818B (zh) | 2017-01-21 |
Family
ID=43778979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099132788A TWI567818B (zh) | 2009-09-28 | 2010-09-28 | 整組之侷限環設備 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20110073257A1 (enExample) |
| EP (1) | EP2484185A4 (enExample) |
| JP (2) | JP5792174B2 (enExample) |
| KR (1) | KR101711687B1 (enExample) |
| CN (1) | CN102656952B (enExample) |
| SG (2) | SG10201405469WA (enExample) |
| TW (1) | TWI567818B (enExample) |
| WO (1) | WO2011038344A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130059448A1 (en) * | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
| CN103854943B (zh) * | 2012-11-30 | 2016-05-04 | 中微半导体设备(上海)有限公司 | 一种用于等离子体处理腔室的约束环及腔室清洁方法 |
| CN103906336A (zh) * | 2014-04-14 | 2014-07-02 | 中国科学院工程热物理研究所 | 压力温度可调的气体放电等离子体发生装置 |
| CN105789008B (zh) * | 2014-12-22 | 2017-12-19 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及等离子体刻蚀方法 |
| KR102552776B1 (ko) | 2015-11-30 | 2023-07-10 | (주)아모레퍼시픽 | miRNA를 포함하는 흑색종 전이 억제용 조성물 |
| US9953843B2 (en) * | 2016-02-05 | 2018-04-24 | Lam Research Corporation | Chamber for patterning non-volatile metals |
| GB201603581D0 (en) * | 2016-03-01 | 2016-04-13 | Spts Technologies Ltd | Plasma processing apparatus |
| JP7296829B2 (ja) * | 2019-09-05 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置、処理方法、上部電極構造 |
| CN112713075B (zh) * | 2019-10-25 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 等离子体隔离环、等离子体处理装置与基片处理方法 |
| CN113745081B (zh) * | 2020-05-27 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种隔离环组件、等离子体处理装置及处理方法 |
| CN113808900B (zh) * | 2020-06-17 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其约束环组件与方法 |
| CN114639585B (zh) * | 2020-12-16 | 2025-02-14 | 中微半导体设备(上海)股份有限公司 | 约束环组件、等离子处理装置及其排气控制方法 |
| CN115881506B (zh) * | 2023-03-02 | 2023-06-27 | 深圳市新凯来技术有限公司 | 等离子体调节装置及半导体刻蚀设备 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058298A (ja) * | 1998-08-06 | 2000-02-25 | Foi:Kk | プラズマリアクタ |
| WO2009100289A2 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Methods and apparatus for changing area ratio in a plasma processing system |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3165941B2 (ja) * | 1993-10-04 | 2001-05-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
| JP3222859B2 (ja) * | 1994-04-20 | 2001-10-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| TW323387B (enExample) * | 1995-06-07 | 1997-12-21 | Tokyo Electron Co Ltd | |
| JP3192370B2 (ja) * | 1995-06-08 | 2001-07-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
| JP3535309B2 (ja) * | 1996-04-10 | 2004-06-07 | 東京エレクトロン株式会社 | 減圧処理装置 |
| JP4405496B2 (ja) * | 1997-02-24 | 2010-01-27 | 株式会社エフオーアイ | プラズマ処理装置 |
| JP3468446B2 (ja) * | 1997-05-20 | 2003-11-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR19990036942U (ko) * | 1999-05-01 | 1999-10-05 | 김시오 | 충격흡수를위한가이드레일 |
| US6203661B1 (en) * | 1999-12-07 | 2001-03-20 | Trusi Technologies, Llc | Brim and gas escape for non-contact wafer holder |
| JP2001185542A (ja) * | 1999-12-27 | 2001-07-06 | Hitachi Ltd | プラズマ処理装置及びそれを用いたプラズマ処理方法 |
| US6350317B1 (en) * | 1999-12-30 | 2002-02-26 | Lam Research Corporation | Linear drive system for use in a plasma processing system |
| JP2002018276A (ja) * | 2000-07-10 | 2002-01-22 | Pearl Kogyo Kk | 大気圧プラズマ処理装置 |
| US6433484B1 (en) * | 2000-08-11 | 2002-08-13 | Lam Research Corporation | Wafer area pressure control |
| US6800173B2 (en) * | 2000-12-15 | 2004-10-05 | Novellus Systems, Inc. | Variable gas conductance control for a process chamber |
| US6602381B1 (en) * | 2001-04-30 | 2003-08-05 | Lam Research Corporation | Plasma confinement by use of preferred RF return path |
| US6706138B2 (en) * | 2001-08-16 | 2004-03-16 | Applied Materials Inc. | Adjustable dual frequency voltage dividing plasma reactor |
| JP3660646B2 (ja) * | 2002-04-25 | 2005-06-15 | 株式会社東芝 | プラズマ処理装置 |
| US6841943B2 (en) * | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
| JP4268433B2 (ja) * | 2003-04-02 | 2009-05-27 | 積水化学工業株式会社 | プラズマ処理装置 |
| JP4286576B2 (ja) * | 2003-04-25 | 2009-07-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7276135B2 (en) * | 2004-05-28 | 2007-10-02 | Lam Research Corporation | Vacuum plasma processor including control in response to DC bias voltage |
| US20060177600A1 (en) * | 2005-02-08 | 2006-08-10 | Applied Materials, Inc. | Inductive plasma system with sidewall magnet |
| US20070116872A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
| US7875824B2 (en) * | 2006-10-16 | 2011-01-25 | Lam Research Corporation | Quartz guard ring centering features |
| JP5029041B2 (ja) * | 2007-01-30 | 2012-09-19 | Ｔｄｋ株式会社 | プラズマｃｖｄ装置、及び、薄膜製造方法 |
| CN102027574B (zh) * | 2008-02-08 | 2014-09-10 | 朗姆研究公司 | 等离子体处理室部件的保护性涂层及其使用方法 |
-
2010
- 2010-09-27 EP EP10819603.1A patent/EP2484185A4/en not_active Withdrawn
- 2010-09-27 US US12/890,990 patent/US20110073257A1/en not_active Abandoned
- 2010-09-27 SG SG10201405469WA patent/SG10201405469WA/en unknown
- 2010-09-27 JP JP2012531102A patent/JP5792174B2/ja active Active
- 2010-09-27 CN CN201080042131.6A patent/CN102656952B/zh active Active
- 2010-09-27 WO PCT/US2010/050401 patent/WO2011038344A2/en not_active Ceased
- 2010-09-27 KR KR1020127007783A patent/KR101711687B1/ko active Active
- 2010-09-27 SG SG2012009619A patent/SG178371A1/en unknown
- 2010-09-28 TW TW099132788A patent/TWI567818B/zh active
-
2015
- 2015-06-02 JP JP2015111888A patent/JP6204940B2/ja active Active
- 2015-07-17 US US14/802,972 patent/US20150325414A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058298A (ja) * | 1998-08-06 | 2000-02-25 | Foi:Kk | プラズマリアクタ |
| WO2009100289A2 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Methods and apparatus for changing area ratio in a plasma processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201133607A (en) | 2011-10-01 |
| SG10201405469WA (en) | 2014-10-30 |
| JP5792174B2 (ja) | 2015-10-07 |
| WO2011038344A3 (en) | 2011-07-28 |
| JP2015201653A (ja) | 2015-11-12 |
| KR101711687B1 (ko) | 2017-03-02 |
| KR20120088687A (ko) | 2012-08-08 |
| EP2484185A2 (en) | 2012-08-08 |
| WO2011038344A2 (en) | 2011-03-31 |
| CN102656952A (zh) | 2012-09-05 |
| CN102656952B (zh) | 2016-10-12 |
| JP2013506301A (ja) | 2013-02-21 |
| JP6204940B2 (ja) | 2017-09-27 |
| EP2484185A4 (en) | 2014-07-23 |
| US20110073257A1 (en) | 2011-03-31 |
| US20150325414A1 (en) | 2015-11-12 |
| SG178371A1 (en) | 2012-03-29 |
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