SG178371A1 - Unitized confinement ring arrangements and methods thereof - Google Patents

Unitized confinement ring arrangements and methods thereof Download PDF

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Publication number
SG178371A1
SG178371A1 SG2012009619A SG2012009619A SG178371A1 SG 178371 A1 SG178371 A1 SG 178371A1 SG 2012009619 A SG2012009619 A SG 2012009619A SG 2012009619 A SG2012009619 A SG 2012009619A SG 178371 A1 SG178371 A1 SG 178371A1
Authority
SG
Singapore
Prior art keywords
arrangement
confinement ring
unitized
confined chamber
chamber region
Prior art date
Application number
SG2012009619A
Other languages
English (en)
Inventor
Rajinder Dhindsa
Rajaramanan Kalyanaraman
Sathyanarayanan Mani
Guatam Bhattacharyya
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG178371A1 publication Critical patent/SG178371A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
SG2012009619A 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof SG178371A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24652609P 2009-09-28 2009-09-28
PCT/US2010/050401 WO2011038344A2 (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof

Publications (1)

Publication Number Publication Date
SG178371A1 true SG178371A1 (en) 2012-03-29

Family

ID=43778979

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012009619A SG178371A1 (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof
SG10201405469WA SG10201405469WA (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201405469WA SG10201405469WA (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof

Country Status (8)

Country Link
US (2) US20110073257A1 (enExample)
EP (1) EP2484185A4 (enExample)
JP (2) JP5792174B2 (enExample)
KR (1) KR101711687B1 (enExample)
CN (1) CN102656952B (enExample)
SG (2) SG178371A1 (enExample)
TW (1) TWI567818B (enExample)
WO (1) WO2011038344A2 (enExample)

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CN103854943B (zh) * 2012-11-30 2016-05-04 中微半导体设备(上海)有限公司 一种用于等离子体处理腔室的约束环及腔室清洁方法
CN103906336A (zh) * 2014-04-14 2014-07-02 中国科学院工程热物理研究所 压力温度可调的气体放电等离子体发生装置
CN105789008B (zh) * 2014-12-22 2017-12-19 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体刻蚀方法
KR102552776B1 (ko) 2015-11-30 2023-07-10 (주)아모레퍼시픽 miRNA를 포함하는 흑색종 전이 억제용 조성물
US9953843B2 (en) * 2016-02-05 2018-04-24 Lam Research Corporation Chamber for patterning non-volatile metals
GB201603581D0 (en) * 2016-03-01 2016-04-13 Spts Technologies Ltd Plasma processing apparatus
JP7296829B2 (ja) * 2019-09-05 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置、処理方法、上部電極構造
CN112713075B (zh) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体隔离环、等离子体处理装置与基片处理方法
CN113745081B (zh) * 2020-05-27 2024-03-12 中微半导体设备(上海)股份有限公司 一种隔离环组件、等离子体处理装置及处理方法
CN113808900B (zh) * 2020-06-17 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其约束环组件与方法
CN114639585B (zh) * 2020-12-16 2025-02-14 中微半导体设备(上海)股份有限公司 约束环组件、等离子处理装置及其排气控制方法
CN115881506B (zh) * 2023-03-02 2023-06-27 深圳市新凯来技术有限公司 等离子体调节装置及半导体刻蚀设备

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JP3222859B2 (ja) * 1994-04-20 2001-10-29 東京エレクトロン株式会社 プラズマ処理装置
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Also Published As

Publication number Publication date
WO2011038344A2 (en) 2011-03-31
US20110073257A1 (en) 2011-03-31
JP6204940B2 (ja) 2017-09-27
JP2013506301A (ja) 2013-02-21
TWI567818B (zh) 2017-01-21
KR20120088687A (ko) 2012-08-08
US20150325414A1 (en) 2015-11-12
JP5792174B2 (ja) 2015-10-07
SG10201405469WA (en) 2014-10-30
JP2015201653A (ja) 2015-11-12
CN102656952A (zh) 2012-09-05
WO2011038344A3 (en) 2011-07-28
EP2484185A2 (en) 2012-08-08
KR101711687B1 (ko) 2017-03-02
EP2484185A4 (en) 2014-07-23
CN102656952B (zh) 2016-10-12
TW201133607A (en) 2011-10-01

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