KR101699639B1 - 마이크로리소그래피 투영 노광 장치용 광학 시스템 및 마이크로리소그래피 노광 방법 - Google Patents

마이크로리소그래피 투영 노광 장치용 광학 시스템 및 마이크로리소그래피 노광 방법 Download PDF

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KR101699639B1
KR101699639B1 KR1020157005671A KR20157005671A KR101699639B1 KR 101699639 B1 KR101699639 B1 KR 101699639B1 KR 1020157005671 A KR1020157005671 A KR 1020157005671A KR 20157005671 A KR20157005671 A KR 20157005671A KR 101699639 B1 KR101699639 B1 KR 101699639B1
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South Korea
Prior art keywords
polarization
optical system
optical
light
mirror
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Korean (ko)
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KR20150040343A (ko
Inventor
잉고 생거
프랑크 슐레세너
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/002—Arrays of reflective systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3075—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state for use in the UV
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020157005671A 2012-09-28 2013-09-19 마이크로리소그래피 투영 노광 장치용 광학 시스템 및 마이크로리소그래피 노광 방법 Expired - Fee Related KR101699639B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261706824P 2012-09-28 2012-09-28
DE102012217769.8A DE102012217769A1 (de) 2012-09-28 2012-09-28 Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102012217769.8 2012-09-28
US61/706,824 2012-09-28
PCT/EP2013/069458 WO2014048828A1 (en) 2012-09-28 2013-09-19 Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method

Publications (2)

Publication Number Publication Date
KR20150040343A KR20150040343A (ko) 2015-04-14
KR101699639B1 true KR101699639B1 (ko) 2017-01-24

Family

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KR1020157005671A Expired - Fee Related KR101699639B1 (ko) 2012-09-28 2013-09-19 마이크로리소그래피 투영 노광 장치용 광학 시스템 및 마이크로리소그래피 노광 방법

Country Status (5)

Country Link
US (1) US9488918B2 (enExample)
JP (1) JP6140290B2 (enExample)
KR (1) KR101699639B1 (enExample)
DE (1) DE102012217769A1 (enExample)
WO (1) WO2014048828A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017032525A1 (en) * 2015-08-21 2017-03-02 Asml Netherlands B.V. Lithographic method and apparatus
DE102019208961A1 (de) 2019-06-19 2020-12-24 Carl Zeiss Smt Gmbh Projektionsoptik und Projektionsbelichtungsanlage mit einer solchen Projektionsoptik

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050134825A1 (en) 2002-02-08 2005-06-23 Carl Zeiss Smt Ag Polarization-optimized illumination system
JP2008538452A (ja) * 2005-04-20 2008-10-23 カール・ツァイス・エスエムティー・アーゲー 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子
US20100149504A1 (en) * 2008-12-17 2010-06-17 Carl Zeiss Smt Ag Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method
JP2011524642A (ja) 2008-06-20 2011-09-01 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学系及びマイクロリソグラフィ露光方法

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DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
JP3652296B2 (ja) 2001-10-26 2005-05-25 キヤノン株式会社 光学装置
DE10206061A1 (de) 2002-02-08 2003-09-04 Carl Zeiss Semiconductor Mfg S Polarisationsoptimiertes Beleuchtungssystem
JP4717813B2 (ja) 2003-09-12 2011-07-06 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光設備のための照明系
EP1668420B1 (en) 2003-09-26 2008-05-21 Carl Zeiss SMT AG Exposure method as well as projection exposure system for carrying out the method
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
DE102004011733A1 (de) 2004-03-04 2005-09-22 Carl Zeiss Smt Ag Transmissionsfiltervorrichtung
US7317539B2 (en) * 2004-08-23 2008-01-08 Asml Netherlands B.V. Polarizing beam splitter device, interferometer module, lithographic apparatus, and device manufacturing method
TWI423301B (zh) 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
DE102006038643B4 (de) 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102007012564A1 (de) 2007-03-13 2008-09-25 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
DE102007043958B4 (de) 2007-09-14 2011-08-25 Carl Zeiss SMT GmbH, 73447 Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102008009601A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
US20110037962A1 (en) 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
EP2369413B1 (en) * 2010-03-22 2021-04-07 ASML Netherlands BV Illumination system and lithographic apparatus
DE102010029339A1 (de) 2010-05-27 2011-12-01 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102010029905A1 (de) 2010-06-10 2011-12-15 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
WO2013039240A1 (ja) * 2011-09-16 2013-03-21 株式会社ニコン 照明光学装置、光学系ユニット、照明方法、並びに露光方法及び装置
DE102012206154A1 (de) 2012-04-16 2013-06-06 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102012214198A1 (de) 2012-08-09 2013-05-29 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050134825A1 (en) 2002-02-08 2005-06-23 Carl Zeiss Smt Ag Polarization-optimized illumination system
JP2008538452A (ja) * 2005-04-20 2008-10-23 カール・ツァイス・エスエムティー・アーゲー 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子
JP2011524642A (ja) 2008-06-20 2011-09-01 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学系及びマイクロリソグラフィ露光方法
US20100149504A1 (en) * 2008-12-17 2010-06-17 Carl Zeiss Smt Ag Illumination device of a microlithographic projection exposure apparatus, and microlithographic projection exposure method

Also Published As

Publication number Publication date
JP2015534653A (ja) 2015-12-03
WO2014048828A1 (en) 2014-04-03
US20150160566A1 (en) 2015-06-11
JP6140290B2 (ja) 2017-05-31
US9488918B2 (en) 2016-11-08
KR20150040343A (ko) 2015-04-14
DE102012217769A1 (de) 2014-04-03

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