JP6140290B2 - マイクロリソグラフィー投影露光装置用光学システム及びマイクロリソグラフィー露光方法 - Google Patents

マイクロリソグラフィー投影露光装置用光学システム及びマイクロリソグラフィー露光方法 Download PDF

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JP6140290B2
JP6140290B2 JP2015532407A JP2015532407A JP6140290B2 JP 6140290 B2 JP6140290 B2 JP 6140290B2 JP 2015532407 A JP2015532407 A JP 2015532407A JP 2015532407 A JP2015532407 A JP 2015532407A JP 6140290 B2 JP6140290 B2 JP 6140290B2
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optical
polarization
optical system
mirror
light
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JP2015534653A5 (enExample
JP2015534653A (ja
Inventor
ゼンガー インゴ
ゼンガー インゴ
シュレゼナー フランク
シュレゼナー フランク
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/002—Arrays of reflective systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3075—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state for use in the UV
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2015532407A 2012-09-28 2013-09-19 マイクロリソグラフィー投影露光装置用光学システム及びマイクロリソグラフィー露光方法 Active JP6140290B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261706824P 2012-09-28 2012-09-28
DE102012217769.8 2012-09-28
DE102012217769.8A DE102012217769A1 (de) 2012-09-28 2012-09-28 Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
US61/706,824 2012-09-28
PCT/EP2013/069458 WO2014048828A1 (en) 2012-09-28 2013-09-19 Optical system for a microlithographic projection exposure apparatus and microlithographic exposure method

Publications (3)

Publication Number Publication Date
JP2015534653A JP2015534653A (ja) 2015-12-03
JP2015534653A5 JP2015534653A5 (enExample) 2016-08-18
JP6140290B2 true JP6140290B2 (ja) 2017-05-31

Family

ID=50276225

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JP2015532407A Active JP6140290B2 (ja) 2012-09-28 2013-09-19 マイクロリソグラフィー投影露光装置用光学システム及びマイクロリソグラフィー露光方法

Country Status (5)

Country Link
US (1) US9488918B2 (enExample)
JP (1) JP6140290B2 (enExample)
KR (1) KR101699639B1 (enExample)
DE (1) DE102012217769A1 (enExample)
WO (1) WO2014048828A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6659827B2 (ja) * 2015-08-21 2020-03-04 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法及び装置
DE102019208961A1 (de) 2019-06-19 2020-12-24 Carl Zeiss Smt Gmbh Projektionsoptik und Projektionsbelichtungsanlage mit einer solchen Projektionsoptik

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19535392A1 (de) 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
JP3652296B2 (ja) 2001-10-26 2005-05-25 キヤノン株式会社 光学装置
DE10206061A1 (de) 2002-02-08 2003-09-04 Carl Zeiss Semiconductor Mfg S Polarisationsoptimiertes Beleuchtungssystem
US20050134825A1 (en) * 2002-02-08 2005-06-23 Carl Zeiss Smt Ag Polarization-optimized illumination system
KR101159867B1 (ko) 2003-09-12 2012-06-26 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투사 노출 장치용 조명 시스템
JP4588635B2 (ja) 2003-09-26 2010-12-01 カール・ツァイス・エスエムティー・アーゲー マイクロリソグラフィ照明方法及びその方法を実行するための投影照明系
CN1910522B (zh) 2004-01-16 2010-05-26 卡尔蔡司Smt股份公司 偏振调制光学元件
DE102004011733A1 (de) 2004-03-04 2005-09-22 Carl Zeiss Smt Ag Transmissionsfiltervorrichtung
US7317539B2 (en) * 2004-08-23 2008-01-08 Asml Netherlands B.V. Polarizing beam splitter device, interferometer module, lithographic apparatus, and device manufacturing method
TWI453795B (zh) 2005-01-21 2014-09-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
WO2006111319A2 (en) 2005-04-20 2006-10-26 Carl Zeiss Smt Ag Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system
DE102006038643B4 (de) 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102007012564A1 (de) 2007-03-13 2008-09-25 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
DE102007043958B4 (de) 2007-09-14 2011-08-25 Carl Zeiss SMT GmbH, 73447 Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102008009601A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
WO2009152867A1 (en) * 2008-06-20 2009-12-23 Carl Zeiss Smt Ag Optical system of a microlithographic projection exposure apparatus and microlithographic exposure method
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
DE102008054844B4 (de) * 2008-12-17 2010-09-23 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie mikrolithographisches Projektionsbelichtungsverfahren
US20110037962A1 (en) 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
EP2369413B1 (en) * 2010-03-22 2021-04-07 ASML Netherlands BV Illumination system and lithographic apparatus
DE102010029339A1 (de) 2010-05-27 2011-12-01 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102010029905A1 (de) 2010-06-10 2011-12-15 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
WO2013039240A1 (ja) * 2011-09-16 2013-03-21 株式会社ニコン 照明光学装置、光学系ユニット、照明方法、並びに露光方法及び装置
DE102012206154A1 (de) 2012-04-16 2013-06-06 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102012214198A1 (de) 2012-08-09 2013-05-29 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage

Also Published As

Publication number Publication date
KR101699639B1 (ko) 2017-01-24
US9488918B2 (en) 2016-11-08
KR20150040343A (ko) 2015-04-14
WO2014048828A1 (en) 2014-04-03
DE102012217769A1 (de) 2014-04-03
US20150160566A1 (en) 2015-06-11
JP2015534653A (ja) 2015-12-03

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