KR101697412B1 - 금속 산화물 박막 형성용 도포액, 금속 산화물 박막, 전계 효과형 트랜지스터, 및 전계 효과형 트랜지스터의 제조 방법 - Google Patents

금속 산화물 박막 형성용 도포액, 금속 산화물 박막, 전계 효과형 트랜지스터, 및 전계 효과형 트랜지스터의 제조 방법 Download PDF

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KR101697412B1
KR101697412B1 KR1020147017669A KR20147017669A KR101697412B1 KR 101697412 B1 KR101697412 B1 KR 101697412B1 KR 1020147017669 A KR1020147017669 A KR 1020147017669A KR 20147017669 A KR20147017669 A KR 20147017669A KR 101697412 B1 KR101697412 B1 KR 101697412B1
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forming
thin film
metal oxide
inorganic
oxide thin
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KR20140097475A (ko
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유키 나카무라
나오유키 우에다
유키코 아베
유지 소네
신지 마츠모토
미키코 다카다
료이치 사오토메
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가부시키가이샤 리코
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/862—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type

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  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020147017669A 2011-11-30 2012-11-28 금속 산화물 박막 형성용 도포액, 금속 산화물 박막, 전계 효과형 트랜지스터, 및 전계 효과형 트랜지스터의 제조 방법 Active KR101697412B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-261991 2011-11-30
JP2011261991A JP5929132B2 (ja) 2011-11-30 2011-11-30 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法
PCT/JP2012/081426 WO2013081167A1 (en) 2011-11-30 2012-11-28 Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor

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KR20140097475A KR20140097475A (ko) 2014-08-06
KR101697412B1 true KR101697412B1 (ko) 2017-01-17

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US (1) US9418842B2 (https=)
EP (1) EP2786405B1 (https=)
JP (1) JP5929132B2 (https=)
KR (1) KR101697412B1 (https=)
CN (2) CN107403716A (https=)
IN (1) IN2014CN04267A (https=)
TW (1) TWI559540B (https=)
WO (1) WO2013081167A1 (https=)

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CN105408244B (zh) * 2013-08-07 2019-04-12 株式会社尼康 金属氧化物膜的制造方法和晶体管的制造方法
JP6180908B2 (ja) * 2013-12-06 2017-08-16 富士フイルム株式会社 金属酸化物半導体膜、薄膜トランジスタ、表示装置、イメージセンサ及びｘ線センサ
JP6672611B2 (ja) 2014-07-03 2020-03-25 株式会社リコー エレクトロクロミック化合物、エレクトロクロミック組成物及び表示素子及び調光素子
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EP3125296B1 (en) 2015-07-30 2020-06-10 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
JP6828293B2 (ja) 2015-09-15 2021-02-10 株式会社リコー ｎ型酸化物半導体膜形成用塗布液、ｎ型酸化物半導体膜の製造方法、及び電界効果型トランジスタの製造方法
US10269293B2 (en) 2015-10-23 2019-04-23 Ricoh Company, Ltd. Field-effect transistor (FET) having gate oxide insulating layer including SI and alkaline earth elements, and display element, image display and system including FET
US10600916B2 (en) 2015-12-08 2020-03-24 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
JP6607013B2 (ja) 2015-12-08 2019-11-20 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
US10170635B2 (en) 2015-12-09 2019-01-01 Ricoh Company, Ltd. Semiconductor device, display device, display apparatus, and system
JP6907512B2 (ja) * 2015-12-15 2021-07-21 株式会社リコー 電界効果型トランジスタの製造方法
JP6701835B2 (ja) 2016-03-11 2020-05-27 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP6848405B2 (ja) * 2016-12-07 2021-03-24 株式会社リコー 電界効果型トランジスタの製造方法
CN107546262A (zh) * 2017-07-17 2018-01-05 华南理工大学 一种基于锶铟氧化物的薄膜晶体管及其制备方法
KR102215837B1 (ko) 2018-03-19 2021-02-16 가부시키가이샤 리코 산화물 형성용 도포액, 산화물막의 제조 방법, 및 전계 효과형 트랜지스터의 제조 방법
CN111370495B (zh) * 2018-12-26 2022-05-03 Tcl科技集团股份有限公司 薄膜晶体管有源层墨水及一种薄膜晶体管的制备方法
JP7326795B2 (ja) 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
CN113314614A (zh) * 2021-05-28 2021-08-27 电子科技大学 基于纳米压印法的氧化物薄膜晶体管器件及其制备方法

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EP2786405A1 (en) 2014-10-08
IN2014CN04267A (https=) 2015-07-31
EP2786405B1 (en) 2017-03-29
KR20140097475A (ko) 2014-08-06
CN104081510A (zh) 2014-10-01
JP5929132B2 (ja) 2016-06-01
TW201327831A (zh) 2013-07-01
JP2013115328A (ja) 2013-06-10
US20140299877A1 (en) 2014-10-09
US9418842B2 (en) 2016-08-16
TWI559540B (zh) 2016-11-21
CN107403716A (zh) 2017-11-28
EP2786405A4 (en) 2015-04-08
WO2013081167A1 (en) 2013-06-06

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