KR101677226B1 - 이온 주입 균일성을 제어하기 위한 장치 및 기술들 - Google Patents

이온 주입 균일성을 제어하기 위한 장치 및 기술들 Download PDF

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KR101677226B1
KR101677226B1 KR1020157034316A KR20157034316A KR101677226B1 KR 101677226 B1 KR101677226 B1 KR 101677226B1 KR 1020157034316 A KR1020157034316 A KR 1020157034316A KR 20157034316 A KR20157034316 A KR 20157034316A KR 101677226 B1 KR101677226 B1 KR 101677226B1
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South Korea
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ion
ion beam
change
frequency
frequency domain
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Korean (ko)
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KR20160003258A (ko
Inventor
스타니슬라브 에스. 토도로브
조지 엠. 감멜
리챠드 알렌 스프렌클리
노르만 이. 후스세이
프랭크 신클레이어
성우 장
죠셉 씨. 올슨
데이비드 로저 팀버레이크
커트 티. 덱커-루케
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020157034316A 2013-05-03 2014-05-02 이온 주입 균일성을 제어하기 위한 장치 및 기술들 Active KR101677226B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361819080P 2013-05-03 2013-05-03
US61/819,080 2013-05-03
US14/037,207 2013-09-25
US14/037,207 US8853653B1 (en) 2013-05-03 2013-09-25 Apparatus and techniques for controlling ion implantation uniformity
PCT/US2014/036549 WO2014179672A1 (en) 2013-05-03 2014-05-02 Apparatus and techniques for controlling ion implantation uniformity

Publications (2)

Publication Number Publication Date
KR20160003258A KR20160003258A (ko) 2016-01-08
KR101677226B1 true KR101677226B1 (ko) 2016-11-29

Family

ID=51626935

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020157034316A Active KR101677226B1 (ko) 2013-05-03 2014-05-02 이온 주입 균일성을 제어하기 위한 장치 및 기술들
KR1020157034315A Active KR101677225B1 (ko) 2013-05-03 2014-05-02 이온 주입 균일성을 제어하기 위한 장치 및 기술들

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KR1020157034315A Active KR101677225B1 (ko) 2013-05-03 2014-05-02 이온 주입 균일성을 제어하기 위한 장치 및 기술들

Country Status (6)

Country Link
US (2) US9006692B2 (enExample)
JP (2) JP2016526254A (enExample)
KR (2) KR101677226B1 (enExample)
CN (2) CN105264633B (enExample)
TW (2) TWI564927B (enExample)
WO (2) WO2014179672A1 (enExample)

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JP6517520B2 (ja) * 2015-01-27 2019-05-22 ラピスセミコンダクタ株式会社 監視装置、イオン注入装置、及び監視方法
US9396903B1 (en) * 2015-02-06 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control ion beam current
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US10395889B2 (en) * 2016-09-07 2019-08-27 Axcelis Technologies, Inc. In situ beam current monitoring and control in scanned ion implantation systems
US10431421B2 (en) * 2017-11-03 2019-10-01 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques for beam mapping in ion beam system
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
CN111830553B (zh) * 2019-04-16 2022-10-25 中芯国际集成电路制造(上海)有限公司 离子束均匀度检测装置及检测方法
JP7286420B2 (ja) * 2019-05-31 2023-06-05 株式会社アルバック イオン注入装置
US11264205B2 (en) * 2019-12-06 2022-03-01 Applied Materials, Inc. Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates
KR102544486B1 (ko) * 2020-04-07 2023-06-16 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 주입 시스템
US20250323013A1 (en) * 2024-04-12 2025-10-16 Applied Materials, Inc. Detection of Space Charge Effect During Ion Implantation
CN120353191A (zh) * 2025-04-16 2025-07-22 深圳奉天实业有限公司 用于fib设备的离子束能量自适应调控方法及系统

Citations (2)

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US20080073584A1 (en) * 2006-06-09 2008-03-27 Callahan William G Ion beam current uniformity monitor, ion implanter and related method
US20110042578A1 (en) 2004-01-06 2011-02-24 Adrian Murrell Ion beam monitoring arrangement

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JPH0492351A (ja) * 1990-08-07 1992-03-25 Tel Varian Ltd イオン注入装置
US6323497B1 (en) 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US7282721B2 (en) * 2001-08-30 2007-10-16 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for tuning ion implanters
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US6781141B2 (en) * 2002-10-29 2004-08-24 International Business Machines Corporation Method and structure for detection and measurement of electrical and mechanical resonance associated with an E-beam lithography tool
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US7423277B2 (en) 2006-03-14 2008-09-09 Axcelis Technologies, Inc. Ion beam monitoring in an ion implanter using an imaging device
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
CN101467227A (zh) * 2006-06-09 2009-06-24 瓦里安半导体设备公司 离子束电流均匀度监控器、离子注入机以及其方法
US7453070B2 (en) * 2006-06-29 2008-11-18 Varian Semiconductor Associates, Inc. Methods and apparatus for beam density measurement in two dimensions
US7755066B2 (en) * 2008-03-28 2010-07-13 Varian Semiconductor Equipment Associates, Inc. Techniques for improved uniformity tuning in an ion implanter system
US8071964B2 (en) 2008-05-01 2011-12-06 Axcelis Technologies, Inc. System and method of performing uniform dose implantation under adverse conditions
US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
JP2011086643A (ja) * 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法

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US20110042578A1 (en) 2004-01-06 2011-02-24 Adrian Murrell Ion beam monitoring arrangement
US20080073584A1 (en) * 2006-06-09 2008-03-27 Callahan William G Ion beam current uniformity monitor, ion implanter and related method

Also Published As

Publication number Publication date
JP2016526254A (ja) 2016-09-01
TW201501168A (zh) 2015-01-01
KR20160005085A (ko) 2016-01-13
US9006692B2 (en) 2015-04-14
KR20160003258A (ko) 2016-01-08
TWI564927B (zh) 2017-01-01
KR101677225B1 (ko) 2016-11-17
US8853653B1 (en) 2014-10-07
TWI563533B (en) 2016-12-21
WO2014179672A1 (en) 2014-11-06
CN105264633B (zh) 2018-02-02
CN105264634A (zh) 2016-01-20
US20140326179A1 (en) 2014-11-06
WO2014179674A1 (en) 2014-11-06
JP6379182B2 (ja) 2018-08-29
CN105264634B (zh) 2017-03-22
JP2016526253A (ja) 2016-09-01
TW201503213A (zh) 2015-01-16
CN105264633A (zh) 2016-01-20

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