JP2016526253A5 - - Google Patents

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Publication number
JP2016526253A5
JP2016526253A5 JP2016512063A JP2016512063A JP2016526253A5 JP 2016526253 A5 JP2016526253 A5 JP 2016526253A5 JP 2016512063 A JP2016512063 A JP 2016512063A JP 2016512063 A JP2016512063 A JP 2016512063A JP 2016526253 A5 JP2016526253 A5 JP 2016526253A5
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JP
Japan
Prior art keywords
ion
ion beam
frequency domain
variation
adjustment
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JP2016512063A
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English (en)
Japanese (ja)
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JP6379182B2 (ja
JP2016526253A (ja
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Priority claimed from US14/037,207 external-priority patent/US8853653B1/en
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Publication of JP2016526253A5 publication Critical patent/JP2016526253A5/ja
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JP2016512063A 2013-05-03 2014-05-02 イオン注入均一性を制御するための装置及び技術 Active JP6379182B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361819080P 2013-05-03 2013-05-03
US61/819,080 2013-05-03
US14/037,207 2013-09-25
US14/037,207 US8853653B1 (en) 2013-05-03 2013-09-25 Apparatus and techniques for controlling ion implantation uniformity
PCT/US2014/036549 WO2014179672A1 (en) 2013-05-03 2014-05-02 Apparatus and techniques for controlling ion implantation uniformity

Publications (3)

Publication Number Publication Date
JP2016526253A JP2016526253A (ja) 2016-09-01
JP2016526253A5 true JP2016526253A5 (enExample) 2017-01-12
JP6379182B2 JP6379182B2 (ja) 2018-08-29

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ID=51626935

Family Applications (2)

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JP2016512064A Pending JP2016526254A (ja) 2013-05-03 2014-05-02 イオン注入均一性を制御するための装置及び技術
JP2016512063A Active JP6379182B2 (ja) 2013-05-03 2014-05-02 イオン注入均一性を制御するための装置及び技術

Family Applications Before (1)

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JP2016512064A Pending JP2016526254A (ja) 2013-05-03 2014-05-02 イオン注入均一性を制御するための装置及び技術

Country Status (6)

Country Link
US (2) US9006692B2 (enExample)
JP (2) JP2016526254A (enExample)
KR (2) KR101677226B1 (enExample)
CN (2) CN105264633B (enExample)
TW (2) TWI564927B (enExample)
WO (2) WO2014179672A1 (enExample)

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Publication number Priority date Publication date Assignee Title
JP6517520B2 (ja) * 2015-01-27 2019-05-22 ラピスセミコンダクタ株式会社 監視装置、イオン注入装置、及び監視方法
US9396903B1 (en) * 2015-02-06 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control ion beam current
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US10395889B2 (en) * 2016-09-07 2019-08-27 Axcelis Technologies, Inc. In situ beam current monitoring and control in scanned ion implantation systems
US10431421B2 (en) * 2017-11-03 2019-10-01 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques for beam mapping in ion beam system
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
CN111830553B (zh) * 2019-04-16 2022-10-25 中芯国际集成电路制造(上海)有限公司 离子束均匀度检测装置及检测方法
JP7286420B2 (ja) * 2019-05-31 2023-06-05 株式会社アルバック イオン注入装置
US11264205B2 (en) * 2019-12-06 2022-03-01 Applied Materials, Inc. Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates
KR102544486B1 (ko) * 2020-04-07 2023-06-16 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 주입 시스템
US20250323013A1 (en) * 2024-04-12 2025-10-16 Applied Materials, Inc. Detection of Space Charge Effect During Ion Implantation
CN120353191A (zh) * 2025-04-16 2025-07-22 深圳奉天实业有限公司 用于fib设备的离子束能量自适应调控方法及系统

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492351A (ja) * 1990-08-07 1992-03-25 Tel Varian Ltd イオン注入装置
US6323497B1 (en) 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US7282721B2 (en) * 2001-08-30 2007-10-16 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for tuning ion implanters
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US6781141B2 (en) * 2002-10-29 2004-08-24 International Business Machines Corporation Method and structure for detection and measurement of electrical and mechanical resonance associated with an E-beam lithography tool
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US7423277B2 (en) 2006-03-14 2008-09-09 Axcelis Technologies, Inc. Ion beam monitoring in an ion implanter using an imaging device
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7663125B2 (en) 2006-06-09 2010-02-16 Varian Semiconductor Equipment Associates, Inc. Ion beam current uniformity monitor, ion implanter and related method
CN101467227A (zh) * 2006-06-09 2009-06-24 瓦里安半导体设备公司 离子束电流均匀度监控器、离子注入机以及其方法
US7453070B2 (en) * 2006-06-29 2008-11-18 Varian Semiconductor Associates, Inc. Methods and apparatus for beam density measurement in two dimensions
US7755066B2 (en) * 2008-03-28 2010-07-13 Varian Semiconductor Equipment Associates, Inc. Techniques for improved uniformity tuning in an ion implanter system
US8071964B2 (en) 2008-05-01 2011-12-06 Axcelis Technologies, Inc. System and method of performing uniform dose implantation under adverse conditions
US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
JP2011086643A (ja) * 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法

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